CN105870071A - Aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell - Google Patents
Aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell Download PDFInfo
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- CN105870071A CN105870071A CN201610483110.7A CN201610483110A CN105870071A CN 105870071 A CN105870071 A CN 105870071A CN 201610483110 A CN201610483110 A CN 201610483110A CN 105870071 A CN105870071 A CN 105870071A
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- ceramic
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- aluminium nitride
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- ceramic package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
Abstract
The invention discloses an aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell and relates to the technical field of ceramic packaging. The aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell comprises a ceramic shell having an upward opening, the center of the lower surface of a ceramic shell base plate is provided with a center pad, a leading-out end pad is arranged at the periphery of the center pad, a gap is provided between the center pad and the leading-out end pad, the ceramic shell is made from aluminum nitride, the center of the upper surface of the ceramic shell base plate is provided with a chip bonding area, a lead bonding area is arranged at the periphery of the chip bonding area, the lead bonding area is radial in shape, the outer wall at the periphery of the ceramic shell is provided with a plurality of metal conduction grooves, the chip bonding area is connected with the lead bonding area through bonding wires, and the lead bonding area is connected with the leading-out end pad through the metal conduction grooves. The aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell features high heat-radiating performance and high reliability, post-integration device size and weight can be effectively reduced to enable miniaturization, and the heat-radiating requirement of power devices is met.
Description
Technical field
The present invention relates to ceramic packaging technology field, particularly relate to a kind of aluminium nitride multi-layer ceramics four limit without lead-in wire flat package shell.
Background technology
CQFN(Ceramic Quad Flat No-lead) class shell is mainly used in encapsulating various high-speed ADC, DAC and DDS chip, and product includes ADC, DAC, DDS, GaAs MMIC switch, follows the tracks of hold amplifier, mixer amplifier, power amplifier, frequency mixer and transducer etc..Such shell sharpest edges are disclosure satisfy that numeral, digital-to-analogue, simulation and MEMS package, cross-cutting wide application.The lead-in wire pitch that such shell is conventional has 0.50mm, has that parasitic parameter is little, size is little, good heat dissipation, applying frequency high, high frequency performance is good, be suitable to the features such as volume production.RF performance can cover Ka wave band at present, is suitable to surface and installs.Developing direction: high frequency, at a high speed, low cost.It is applicable to the field such as Aero-Space and defence, automobile application, the energy, health care, instrument and meter measurement, motor control, process control and automation technolo.
Along with complete electronic set and electronic devices and components towards miniature, light weight, at a high speed, efficiently, the direction such as high integration, high reliability and high-power output fast-developing, in device unit volume, produced heat sharply increases, and this proposes requirements at the higher level to the heat radiation of substrate and encapsulating material.If heat can not be distributed in time by substrate, device will be difficult to normally work, and under serious conditions, even can burn.Aluminium nitride (AlN) pottery has high thermal conductivity (theoretical thermal conductivity is 320W/m.K, for about 10 times of aluminium oxide ceramics).The radiating efficiency of device can be effectively improved after using aluminium nitride ceramics, reduce junction temperature, the reliability improving device and life-span.
Domestic high density, high power package mainly use alumina ceramic material, metal material, aluminium oxide ceramics+highly heat-conductive material (tungsten copper, molybdenum copper and CPC etc.), LTCC(Low Temperature Co-fired
Ceramic) baseplate material+aluminium oxide ceramics and ltcc substrate material+metal material, there is presently no multi-layers carbon fiber cloth based on aluminium nitride technology.Al2O3Thermal conductivity relatively low, thermal coefficient of expansion and silicon less mate；Although metal material has higher heat conductivity, but the coefficient of thermal expansion mismatch higher with chip substrate is difficult to meet the encapsulation requirement of high power device, and the shell integrated level of employing metal material is relatively low；Aluminium oxide ceramics+highly heat-conductive material (tungsten copper, molybdenum copper and CPC etc.) is although having higher heat conductivility, but owing to make it have higher mechanical performance, it is necessary that shell and highly heat-conductive material have certain welded lap size, the soldering reliability of shell and highly heat-conductive material could be realized, which limits the miniaturization of its size, and use the shell integrated level of highly heat-conductive material relatively low, therefore this kind of pattern shell is difficulty with miniaturization and integrated；After ltcc substrate combines with aluminium oxide ceramics or metal material, although the problem that can solve coefficient of thermal expansion mismatch, but thermal conductivity is only 30W/m.K, and the capacity of heat transmission is more weak；With other material comparatively, AlN excellent combination property, it is a new generation's high integration and the preferable substrate of power device and encapsulating material.
Summary of the invention
The technical problem to be solved is to provide a kind of aluminium nitride multi-layer ceramics four limit without lead-in wire flat package shell, have the advantages that heat-sinking capability is strong and reliability is high, integrated rear device volume and weight can be effectively reduced, it is achieved miniaturization, meet power device cooling requirements.
For solving above-mentioned technical problem, the technical solution used in the present invention is: a kind of aluminium nitride multi-layer ceramics four limit is without lead-in wire flat package shell, including ceramic package, ceramic package upward opening, lower surface central authorities at ceramic package substrate are provided with central authorities' pad, central authorities pad be formed around exit pad, it is provided with gap between central authorities' pad and exit pad, ceramic package uses aluminium nitride material to make, upper face center at ceramic package substrate is provided with die bonding district, it is formed around wire bonding district in die bonding district, wire bonding district is radially, the lateral wall of ceramic package surrounding is provided with some metal conduction grooves, die bonding district is connected with wire bonding district by bonding wire, wire bonding district is connected with exit pad by metal conduction groove.
Further technical scheme, is provided with heat sink structure in ceramic package substrate center.
Further technical scheme, heat sink material is the one in oxygen-free copper, molybdenum copper, tungsten copper and CPC.
Further technical scheme, the section of metal conduction groove is semicircle, and metal conduction groove upper end is provided with back cover, and this back cover and the coplanar setting of upper surface in wire bonding district, the aperture of metal conduction groove is 0.15～0.60mm, and flute length is 0.15～4.00mm.
Further technical scheme, exit pad is symmetric at the lower surface opposite side two-by-two of ceramic package substrate or is uniformly distributed on four limits, and its quantity is equal with the quantity of the metal conduction groove arranged on corresponding lateral wall.
Further technical scheme, the corner of ceramic package is provided with arc groove, and arc groove is through between the upper and lower surface of ceramic package.
Further technical scheme, the pitch of exit pad is 0.5mm.
Use and have the beneficial effects that produced by technique scheme: the present invention is aluminium nitride multi-layers carbon fiber cloth, utilize the excellent properties of aluminium nitride, the design making the ceramic product of employing aluminium nitride is more flexible, it is capable of the design optimization of electrical property, hot property, mechanical performance, it is capable of Multicarity, multilayer wiring, many via interconnections and bubble-tight encapsulating structure, disclosure satisfy that the different needs of device, module and assembly, it is achieved the high power of device, module and assembly, high density, miniaturization, high-cooling property and highly reliable requirement.
Accompanying drawing explanation
Fig. 1 is that the present invention is without heat sink front view；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is the upward view of Fig. 1；
Fig. 4 is that the present invention is with heat sink front view；
Fig. 5 is the top view of Fig. 4；
Fig. 6 is the upward view of Fig. 4；
In figure: 1, ceramic package；2, die bonding district；3, wire bonding district；4, seal area；5, metal conduction groove；6, exit pad；7, heat sink；8, central authorities' pad；9, arc groove；10, back cover.
Detailed description of the invention
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.
Present configuration such as Fig. 1, shown in Fig. 2, including ceramic package 1, ceramic package 1 upward opening, lower surface central authorities at ceramic package 1 substrate are provided with central authorities' pad 8 as shown in Figure 3, central authorities pad 8 be formed around exit pad 6, ceramic package 1 uses aluminium nitride material to make, the upper face center of substrate is provided with die bonding district 2, it is formed around wire bonding district 3 in die bonding district 2, wire bonding district 3 is radially, wire bonding district 3 surrounding is seal area 4, the lateral wall of ceramic package 1 surrounding is provided with some metal conduction grooves 5, die bonding district 2 is connected with wire bonding district 3 by bonding wire, wire bonding district 3 is connected with exit pad 6 by metal conduction groove 5.Central authorities' pad 8 is for ground connection and heat radiation.
Furthermore it is also possible to be to be provided with heat sink 7 structures in the bottom center of cavity, as shown in Fig. 4, Fig. 5, Fig. 6, wherein, heat sink 7 materials are the one in oxygen-free copper, molybdenum copper, tungsten copper and CPC.
Wherein, the structure of metal conduction groove 5 is, the upper end of metal conduction groove 5 is provided with back cover 10, and the bottom surface of this back cover 10 and the coplanar setting of upper surface in wire bonding district 3, the aperture of metal conduction groove 5 is 0.15～0.60mm, and flute length is 0.15～4.00mm.Wherein wire bonding district 3 is laterally connected with metal conduction groove 5.
Exit pad 6 is symmetric at the lower surface opposite side two-by-two of ceramic package 1 or is uniformly distributed in surrounding, i.e., exit pad 6 quantity of one pair of which relative edge is unequal to relative edge's exit pad 6 quantity with another, and additionally exit pad 6 total quantity is equal with the quantity of the metal conduction groove 5 arranged on corresponding lateral wall.
The corner of ceramic package 1 is provided with arc groove 9, and arc groove 9 is through between the upper and lower surface of ceramic package 1.
The aluminium nitride ceramics shell of CQFN series possesses can the feature such as multilayer wiring, high reliability, high-air-tightness, have the advantages that wiring density is high, heat-sinking capability is strong and reliability is high, integrated rear device volume and weight can be effectively reduced, it is achieved miniaturization, meet power device cooling requirements；Ceramic package can have 1～10 for the polygon cavity accommodating chip or passive device；Ceramic package can have the wire structures of 2 layers to 30 layers；The exit pitch that such shell is conventional has 0.50mm.The exit pad of such ceramic package is uniformly to arrange in four limits.Common exit form has 2 kinds, and a kind of is with being bonded, exit pad refers to that the four flank side surface metal conduction grooves from shell are attached, and another kind is that bonding refers to use the interconnection of buried regions form with exit.
The change aluminum ceramic package of CQFN series is made up of aluminium nitride ceramics body, metal seal ring (can according to customer demand determine with or without) and heat sink (can according to customer demand determine with or without), according to user profile, determine cavity size, according to plate electrode installation requirement, determine lead-in wire arrangement and the interconnected relationship of internal wiring, carry out structure design on this basis, and carry out structure and electrical property emulation, it is ensured that its structural reliability and heat radiation and requirement on electric performance.Metal seal ring material is ferrum nickel or teleoseal, and heat sink material is the high thermal conductivity alloy materials such as oxygen-free copper, molybdenum copper, tungsten copper and CPC.Metal seal ring is for gold stannum sealing, parallel seam welding or the seam welding sealing of laser, heat sink for chip ground or heat radiation.
CQFN class aluminium nitride multi-layers carbon fiber cloth uses AlN multi-layer ceramics burning technology altogether, idiographic flow is: shell through curtain coating, earnestly after, after rushing chamber and punching, hole metallization, through printing, position, be laminated, earnestly become single green part, then by sintering, nickel plating, the single power device of gold-plated rear formation or the CQFN class aluminium nitride Multi-layer ceramic package shell of other device.
Predominant package form of the present invention is that four limits are without lead-in wire (CQFN-Ceramic Quad Flat
No-lead) flat aluminium nitride multi-layers carbon fiber cloth.Aluminium nitride ceramics is a kind of novel high thermal conductive substrate and encapsulating material, there is high thermal conductivity, low thermal coefficient of expansion, low dielectric constant and the feature such as dielectric loss, high mechanical strength, its thermal coefficient of expansion and the chip material such as silicon and GaAs match, insulating properties and dielectric property good, material under high temperature intensity is big, environment-protecting asepsis, chemical stability are good, are widely used in high power electronic field.Aluminium nitride multi-layer ceramics technology makes the design of aluminium nitride ceramics product more flexible, it is capable of the design optimization of electrical property, hot property, mechanical performance, it is capable of Multicarity, multilayer wiring, many via interconnections and bubble-tight encapsulating structure, disclosure satisfy that the different needs of device, module and assembly, it is achieved the high power of device, module and assembly, high density, miniaturization and highly reliable requirement.
Aluminium nitride multi-layers carbon fiber cloth is mainly used in laser diode, high-brightness LED, RF and microwave packaging, radar module encapsulation, power module package, power module, IR detector, CCD, the encapsulation of the devices such as cmos imaging system, Switching Power Supply, high-power integrated circuit, is widely used in power electronics, Aero-Space, national defense and military, automobile and locomotive, communication and other industrial circle.
Aluminium nitride multi-layers carbon fiber cloth is compared with conventional LTCC integrated casing or alumina ceramic envelope, and aluminium nitride ceramics has higher thermal conductivity, and high heat conductance reaches 180W/m K.The problem that device temperature is too high and cisco unity malfunction is even scrapped can be prevented effectively from, power device cooling requirements can be met；It has relatively low thermal coefficient of expansion (4.7ppm) simultaneously, suitable with silicon, solves ceramic cartridge and chip CTE unmatched problem when chip is installed, effectively discharges stress, improve chip installation reliability.
Claims (7)
- null1. aluminium nitride multi-layer ceramics four limit is without lead-in wire flat package shell，Including ceramic package (1)，Ceramic package (1) upward opening，Lower surface central authorities at ceramic package (1) substrate are provided with central authorities' pad (8)，Central authorities pad (8) be formed around exit pad (6)，It is provided with gap between central authorities' pad (8) and exit pad (6)，It is characterized in that，Ceramic package (1) uses aluminium nitride material to make，Upper face center at ceramic package (1) substrate is provided with die bonding district (2)，It is formed around wire bonding district (3) in die bonding district (2)，Wire bonding district (3) is radially，The lateral wall of ceramic package (1) surrounding is provided with some metal conduction grooves (5)，Die bonding district (2) is connected with wire bonding district (3) by bonding wire，Wire bonding district (3) is connected with exit pad (6) by metal conduction groove (5).
- Aluminium nitride multi-layer ceramics four limit the most according to claim 1 is without lead-in wire flat package shell, it is characterised in that be provided with heat sink (7) structure in ceramic package (1) substrate center.
- Aluminium nitride multi-layer ceramics four limit the most according to claim 2 is without lead-in wire flat package shell, it is characterised in that heat sink (7) material is the one in oxygen-free copper, molybdenum copper, tungsten copper and CPC.
- Aluminium nitride multi-layer ceramics four limit the most according to claim 1 and 2 is without lead-in wire flat package shell, it is characterized in that, the section of metal conduction groove (5) is semicircle, metal conduction groove (5) upper end is provided with back cover (10), this back cover (10) and the coplanar setting of upper surface in wire bonding district (3), the aperture of metal conduction groove (5) is 0.15～0.60mm, and flute length is 0.15～4.00mm.
- Aluminium nitride multi-layer ceramics four limit the most according to claim 1 and 2 is without lead-in wire flat package shell, it is characterized in that, exit pad (6) is symmetric at the lower surface opposite side two-by-two of ceramic package (1) substrate or is uniformly distributed on four limits, and its quantity is equal with the quantity of the metal conduction groove (5) arranged on corresponding lateral wall.
- Aluminium nitride multi-layer ceramics four limit the most according to claim 1 and 2 is without lead-in wire flat package shell, it is characterised in that the corner of ceramic package (1) is provided with arc groove (9), and arc groove (9) is through between the upper and lower surface of ceramic package (1).
- Aluminium nitride multi-layer ceramics four limit the most according to claim 1 and 2 is without lead-in wire flat package shell, it is characterised in that the pitch of exit pad (6) is 0.5mm.
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| CN201610483110.7A CN105870071A (en) | 2016-06-28 | 2016-06-28 | Aluminum nitride multilayer-ceramic leadless-periphery flat packaging shell |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658270A (en) * | 2017-10-13 | 2018-02-02 | 中国电子科技集团公司第十三研究所 | Power supply changeover device ceramic package |
| CN108231698A (en) * | 2017-12-29 | 2018-06-29 | 中国电子科技集团公司第十三研究所 | Ceramic pad array shell |
| CN111106070A (en) * | 2019-12-04 | 2020-05-05 | 中国电子科技集团公司第十三研究所 | Ceramic packaging shell convenient for electroplating and electroplating method |
| CN111370572A (en) * | 2020-02-28 | 2020-07-03 | 浙江长兴电子厂有限公司 | Encapsulation structure is welded to gas tightness current sensor back-off |
| CN111540688A (en) * | 2020-05-12 | 2020-08-14 | 中国电子科技集团公司第三十八研究所 | Preparation method for metalizing side wall of LTCC substrate and LTCC substrate |
| CN111599790A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging shell |
| CN111785691A (en) * | 2020-05-13 | 2020-10-16 | 中国电子科技集团公司第五十五研究所 | Radio frequency micro-system three-dimensional packaging shell structure and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111599790A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging shell |
| CN111785691A (en) * | 2020-05-13 | 2020-10-16 | 中国电子科技集团公司第五十五研究所 | Radio frequency micro-system three-dimensional packaging shell structure and manufacturing method |
| CN111599790B (en) * | 2020-05-13 | 2021-12-24 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging shell |
| CN111785691B (en) * | 2020-05-13 | 2022-03-11 | 中国电子科技集团公司第五十五研究所 | Radio frequency micro-system three-dimensional packaging shell structure and manufacturing method |
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Application publication date: 20160817 |