CN105870085B - A kind of aluminium nitride multi-layer ceramics is without lead chip carrier encapsulation shell - Google Patents
A kind of aluminium nitride multi-layer ceramics is without lead chip carrier encapsulation shell Download PDFInfo
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- CN105870085B CN105870085B CN201610483600.7A CN201610483600A CN105870085B CN 105870085 B CN105870085 B CN 105870085B CN 201610483600 A CN201610483600 A CN 201610483600A CN 105870085 B CN105870085 B CN 105870085B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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Abstract
The invention discloses a kind of aluminium nitride multi-layer ceramics without lead chip carrier encapsulation shell, is related to technical field of electronic encapsulation.The present invention includes ceramic shell, the lateral wall of ceramic shell surrounding is equipped with metal conduction slot, ceramic shell is made of aluminium nitride material, ceramic shell includes the face up upper cavity and the downwardly open lower chamber of reverse side of opening, centre is substrate, it is equipped with the adhesion zone for adhering chip or passive device in the lower surface of substrate and upper surface, the periphery of adhesion zone is equipped with wire bonding area, wire bonding area can be connect with the chip being bonded on adhesion zone by bonding wire, and wire bonding area is connect with metal conduction slot；Wire bonding area periphery is equipped with seal area, is equipped with exit pad in the periphery of the seal area of the lower surface of ceramic shell, exit pad is connected to metal conduction slot.The present invention can effectively improve the radiating efficiency of device, reduce junction temperature, the reliability for improving device and service life.
Description
Technical field
The present invention relates to technical field of electronic encapsulation more particularly to a kind of aluminium nitride multi-layer ceramics to be sealed without lead chip carrier
Casing.
Background technology
With complete electronic set and electronic component towards miniature, light weight, high speed, efficiently, high integration, high reliability and big
The directions such as power output are fast-developing, and generated heat sharply increases in device unit volume, this is to substrate and encapsulating material
Heat dissipation propose requirements at the higher level.If heat cannot in time be distributed by substrate, device will be difficult to work normally, serious feelings
Under condition, or even it can burn.
High density, the high power package of the country mainly use alumina ceramic material, metal material, aluminium oxide ceramics+height
Heat Conduction Material（Tungsten copper, molybdenum copper and CPC etc.）, ltcc substrate material+aluminium oxide ceramics and ltcc substrate material+metal material,
There is presently no the multi-layers carbon fiber cloths based on nitridation aluminum technology.Al2O3Thermal conductivity it is relatively low, coefficient of thermal expansion and silicon are less
Match；Although metal material has higher thermal coefficient, it is difficult to meet big work(with the higher coefficient of thermal expansion mismatch of chip substrate
The encapsulation requirement of rate device, and it is relatively low using the shell integrated level of metal material；Aluminium oxide ceramics+highly heat-conductive material（Tungsten copper, molybdenum
Copper and CPC etc.）Although having higher heat conductivility, due to make it have higher mechanical performance, it is necessary that pipe
Shell has certain welded lap size with highly heat-conductive material, could realize the soldering reliability of shell and highly heat-conductive material, this
The miniaturization of its size is limited, and relatively low using the shell integrated level of highly heat-conductive material, therefore this kind of pattern shell is difficult reality
It now minimizes and integrated；After ltcc substrate is combined with aluminium oxide ceramics or metal material, although coefficient of thermal expansion can be solved
The problem of mismatch, but thermal conductivity is only 30W/m.K, and the capacity of heat transmission is weaker, needs thermal hole or weldering tungsten copper radiating block of beginning to speak, combination
Intensity afterwards is low, poor reliability, need to weld metal base plate to increase intensity, solder can only be used to assemble, assembling can force difference；With
Other materials are high integration of new generation and the ideal substrate of power device and package material comparatively, AlN excellent combination properties
Material.
Invention content
Outside technical problem to be solved by the invention is to provide a kind of aluminium nitride multi-layer ceramics without lead chip carrier encapsulation
Shell can effectively improve the radiating efficiency of device, reduce junction temperature, the reliability for improving device and service life.
In order to solve the above technical problems, the technical solution used in the present invention is：
A kind of aluminium nitride multi-layer ceramics without lead chip carrier encapsulation shell, including ceramic shell, ceramic shell surrounding
Lateral wall is equipped with metal conduction slot, and ceramic shell is made of aluminium nitride material, and ceramic shell includes the upper of opening that face up
Cavity and the downwardly open lower chamber of reverse side, centre are substrate, are equipped with for tack core in the lower surface of substrate and upper surface
The adhesion zone of piece or passive device, the periphery of adhesion zone are equipped with wire bonding area, wire bonding area can be bonded on adhesion zone
Chip connected by bonding wire, wire bonding area is connect with metal conduction slot；Wire bonding area periphery is equipped with seal area, is making pottery
The periphery of the seal area of the lower surface of ceramic shell is equipped with exit pad, and exit pad is connected to metal conduction slot.
The cross section of further preferred technical solution, metal conduction slot is semicircle, is set on two opposite lateral walls
The structure for the two groups of metal conduction slots set is：The metal layer of metal conduction slot inner wall is arranged in the lower part of metal conduction slot, metal
The non-metal cladding in upper end of conductance slot；Meanwhile in opposite another two groups of metal conduction slots, the metal layer of metal conduction slot inner wall
It is arranged in the top of metal conduction slot, the non-metal cladding in lower end of metal conduction slot.
The aperture of further preferred technical solution, metal conduction slot is 0.15~0.60mm.
Further preferred technical solution, the pitch of exit pad is 1.27mm, 1.016mm, 0.80mm, 0.65mm,
One kind in 0.635mm.
Further preferred technical solution is equipped with 1~10 in ceramic shell for accommodating the more of chip or passive device
Side shape cavity.
It is using advantageous effect caused by above-mentioned technical proposal：
（1）Present invention is primarily based on high heat conduction aluminium nitride multilayer techniques, have multilayer wiring, high reliability, high-air-tightness
The features such as, have the characteristics that wiring density is high, heat-sinking capability is strong, self-strength is high, reliability is high；
（2）Integrated rear device volume and weight can be effectively reduced, miniaturization, high density, high integration encapsulation is realized, meets
Power device cooling requirements can effectively solve the problems, such as integrated microcircuit high density high power package；
（3）Packaging air tightness is high：Air-tightness meets≤1 × 10-3 Pacm3/s, A4；
（4）Side metal conductance slot meets plate grade installation requirement, is convenient for plate grade welding effect inspection；
（5）Conductive path between wire bonding area and exit pad is shorter, routing resistance and inductance in packaging body
It is very low Deng encapsulation parasitic parameter, there is excellent electrical property；
（6）Good environmental adaptability, resistance to corrosion is strong, can meet salt fog 48h, be recycled at -65 DEG C -150 DEG C of temperature cycles
100 times, moisture-proof 10 times；
（7）Mechanical Reliability is high, can meet the directions constant acceleration 30000g, Y1,1min；
（8）Shelf-stable performance is good；
（9）Have a wide range of application, because it is with high reliability and high-air-tightness, can be applied to the fields such as Aeronautics and Astronautics.
Description of the drawings
Fig. 1 is the front view of the present invention；
Fig. 2 is the vertical view of Fig. 1；
Fig. 3 is the upward view of Fig. 1；
In figure：1, metal conduction slot；2, wire bonding area；3, adhesion zone；4, seal area；5, ceramic shell；6, lower chamber；
7, upper cavity；8, exit pad.
Specific implementation mode
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
The present invention includes ceramic shell 5, and ceramic shell 5 is made of aluminium nitride material, the tow sides of the ceramic shell 5
It is respectively equipped with upper cavity 7 and lower chamber 6, referring to Fig. 2, Fig. 3, exit pad 8 is arranged in the lower surface of ceramic shell 5, epicoele
The bottom of body 7 and lower chamber 6 is equipped with the adhesion zone 3 for adhering chip or passive device, and adhesion zone 3 is surrounded by lead key
Area 2 is closed, wire bonding area 2 is connect with the chip being adhered on adhesion zone 3 with bonding wire, exit pad 8 and wire bonding area 2
It is connected.
Two groups of metal conduction slots 1 shown in Figure 1, being arranged on two opposite lateral walls, 1 inner wall of metal conduction slot
Metal layer is arranged in the lower part of metal conduction slot 1, the non-metal cladding in upper end of metal conduction slot 1；Meanwhile opposite another two
Group metal conduction slot 1, the metal layer of 1 inner wall of metal conduction slot is arranged under the top of metal conduction slot 1, metal conduction slot 1
The non-metal cladding in end.Internal bonding is realized in the setting of metal conduction slot, its advantage is that：Wire bonding area is logical with exit pad
The metal conduction slot of shell side is crossed to realize electrical connection, in this way, can effectively reduce wire bonding area and exit
Conductive path between pad, and since the sheet resistance of gold is relatively low（About 7m Ω）, significantly reduce fill internal routing resistance and
The encapsulation parasitic parameter of inductance etc., to make shell that there is excellent electrical property；Using side metal conductance slot, while can be effective
Difficulty is aligned when reducing the installation of plate grade, effectively improves the positional precision of plate grade erecting and welding, meets plate grade installation requirement and is convenient for plate
Grade welding effect inspection.
Ceramic shell of the present invention uses aluminium nitride material, aluminium nitride ceramics that there is higher thermal conductivity, highest thermal conductivity to reach
To 180W/m.K.It can effectively avoid that device temperature is excessively high and cisco unity malfunction or even the problem of scrap, power device can be met
Cooling requirements；It is with lower coefficient of thermal expansion simultaneously（4.7ppm）, it is suitable with silicon, ceramic cartridge when chip installation can be solved
With the unmatched problem of chip CTE, it is released effectively stress, improves chip installation reliability.
Aluminium nitride ceramics shell of the present invention have can multilayer wiring, high reliability, high-air-tightness the features such as, have connect up it is close
The feature that degree is high, heat-sinking capability is strong and reliability is high can effectively reduce integrated rear device volume and weight, realize miniaturization, full
Sufficient power device cooling requirements；Ceramic shell can be with 1~10 polygon cavity for accommodating chip or passive device；Pottery
Ceramic shell can be with 2 layers to 30 layers of wire structures；The common exit pitch of such shell have 1.27mm, 1.016mm,
0.80mm、0.65mm、0.635mm.The exit pad 8 of such ceramic shell is in that both sides are symmetrical or four sides are uniformly arranged.Often
See that exit form has 2 kinds, one is exit pad 8 be bonded with the metal conduction slot of four flank side surfaces of ceramic shell carry out
Connection, another kind are that bonding refers to exit using the interconnection of buried layer form.The metal conduction slot aperture that exit form uses
0.15~0.60mm, 0.15~4.00mm of length of hollow hole.
Aluminium nitride multi-layers carbon fiber cloth is mainly used for laser diode, high-brightness LED, RF and microwave packaging, radar module
Encapsulation, power module package, power module, IR detectors, CCD, cmos imaging system, Switching Power Supply, high-power integrated circuit
The encapsulation of equal devices.The common lead pitch of such shell has 1.27mm, 1.016mm, 0.80mm, 0.65mm, 0.635mm, tool
There is the features such as small parasitic parameter, small, light-weight, good heat dissipation, be suitable for surface and install, there is that cavity is downward and cavity is upward and double
The various structures such as face cavity, in the cavity portion one or more subregions can be set to install multiple chips and a variety of passive devices
Part meets the requirement of user's high integration encapsulation, can be widely applied to power electronics, aerospace, national defense and military, automobile and machine
Vehicle, communication and other industrial circles.
The aluminium nitride ceramics package casing of LCC series is by aluminium nitride ceramics body, metal seal ring（It can be determined according to customer demand
It is fixed whether there is or not）And it is heat sink（Can according to customer demand determine whether there is or not）Composition determines cavity size according to user information, according to plate electrode
Installation requirement determines the interconnected relationship of lead arrangement and internal wiring, carries out structure design on this basis, and carry out structure
It is emulated with electrical property, ensures its structural reliability and heat dissipation and requirement on electric performance.
Metal seal ring material is iron nickel or teleoseal, and heat sink material is that oxygen-free copper, molybdenum copper, tungsten copper and CPC are contour
Conducting alloy material.Metal seal ring be used for golden tin seal, parallel seam welding or the sealing of laser seam weld, it is heat sink for chip ground or
Heat dissipation.
LCC class aluminium nitride multi-layers carbon fiber cloths use AlN multi-layer ceramics cofiring technologies, and detailed process is：Shell through curtain coating,
After earnestly, after rushing chamber and punching, hole metallization, through printing, positioning, lamination, earnestly at single green part, then by being sintered, plating
Nickel, the gold-plated rear LCC class aluminium nitride Multi-layer ceramic package shells for forming single power device or other devices.
The present invention uses aluminium nitride（AlN）Ceramics are used as package casing, aluminium nitride（AlN）With high thermal conductivity（It is theoretical
Thermal conductivity is 320W/m.K, is 10 times or so of aluminium oxide ceramics）.Using the heat dissipation that can effectively improve device after aluminium nitride ceramics
Efficiency reduces junction temperature, the reliability for improving device and service life.
The packing forms of the present invention are ceramic leadless chip（LCC- Ceramic Leadless Chip Carrier）
Aluminium nitride multi-layers carbon fiber cloth.Aluminium nitride ceramics is a kind of novel high thermal conductive substrate and encapsulating material, has high thermal conductivity
The features such as rate, low coefficient of thermal expansion, low dielectric constant and dielectric loss, high mechanical strength, coefficient of thermal expansion and silicon
Match with chip materials such as GaAs, insulation performance and dielectric property it is good, material under high temperature intensity is big, it is environment-protecting and non-poisonous, change
Have good stability, and is widely used in high power electronic field.Aluminium nitride multi-layer ceramics technology makes setting for aluminium nitride ceramics product
It counts more flexible, provides a kind of shortcut that can more preferably realize device, module and assembly property, can realize electrically
The design optimization of energy, hot property, mechanical performance can realize the encapsulation of Multicarity, multilayer wiring, more via interconnections and air-tightness
Structure, disclosure satisfy that different needs of device, module and component, realization device, the high power of module and component, high density, small
Type and highly reliable requirement.
It is using advantageous effect caused by the present invention：
（1）Present invention is primarily based on high heat conduction aluminium nitride multilayer techniques, have multilayer wiring, high reliability, high-air-tightness
The features such as, have the characteristics that wiring density is high, heat-sinking capability is strong, self-strength is high, reliability is high；
（2）Integrated rear device volume and weight can be effectively reduced, miniaturization, high density, high integration encapsulation is realized, meets
Power device cooling requirements can effectively solve the problems, such as integrated microcircuit high density high power package；
（3）Packaging air tightness is high：Air-tightness meets≤1 × 10-3 Pacm3/s, A4, and wherein A4 is right in GJB548B
Do not seal a kind of leak hunting method of shell, it is therefore an objective to determine with inner cavity microelectronic component and semiconductor packages it is airtight
Property；
（4）Side metal conductance slot meets plate grade installation requirement, is convenient for plate grade welding effect inspection；
（5）Conductive path between wire bonding area and exit pad is shorter, routing resistance and inductance in packaging body
It is very low Deng encapsulation parasitic parameter, there is excellent electrical property；
（6）Good environmental adaptability, resistance to corrosion is strong, can meet salt fog 48h, be recycled at -65 DEG C -150 DEG C of temperature cycles
100 times, moisture-proof 10 times；
（7）Mechanical Reliability is high, can meet the directions constant acceleration 30000g, Y1,1min；Wherein, using Constant Acceleration
Degree testing equipment determines influence of the constant acceleration to microelectronic component, unless otherwise specified, should be in X1, X2, Y1, Y2, Z1, Z2
1min is applied to device in all directions and provides vertical constant acceleration；
（8）Shelf-stable performance is good；
（9）Have a wide range of application, because it is with high reliability and high-air-tightness, can be applied to the fields such as Aeronautics and Astronautics.
Claims (4)
1. a kind of aluminium nitride multi-layer ceramics is without lead chip carrier encapsulation shell, including ceramic shell (5), ceramic shell (5) four
The lateral wall in week is equipped with metal conduction slot (1), which is characterized in that ceramic shell (5) is made of aluminium nitride material, ceramic shell
(5) include the face up upper cavity (7) and the downwardly open lower chamber (6) of reverse side of opening, centre is substrate, under substrate
Surface and upper surface are equipped with the adhesion zone (3) for adhering chip or passive device, and the periphery of adhesion zone (3) is equipped with lead key
It closes area (2), wire bonding area (2) can be connect with the chip being bonded on adhesion zone (3) by bonding wire, wire bonding area (2)
It is connect with metal conduction slot (1)；Wire bonding area (2) periphery is equipped with seal area (4), in the close of the lower surface of ceramic shell (5)
The periphery for sealing area (4) is equipped with exit pad (8), and exit pad (8) is connected to metal conduction slot (1)；
The cross section of metal conduction slot (1) is semicircle, two groups of metal conduction slots (1) being arranged on two opposite lateral walls
Structure is：The metal layer of metal conduction slot (1) inner wall is arranged in the lower part of metal conduction slot (1), the upper end of metal conduction slot (1)
The non-metal cladding in portion；Meanwhile in opposite another two groups of metal conduction slots (1), the metal layer setting of metal conduction slot (1) inner wall exists
The top of metal conduction slot (1), the non-metal cladding in lower end of metal conduction slot (1).
2. a kind of aluminium nitride multi-layer ceramics according to claim 1 is without lead chip carrier encapsulation shell, which is characterized in that
The aperture of metal conduction slot (1) is 0.15~0.60mm.
3. a kind of aluminium nitride multi-layer ceramics according to claim 1 is without lead chip carrier encapsulation shell, which is characterized in that
The pitch of exit pad (8) is one kind in 1.27mm, 1.016mm, 0.80mm, 0.65mm, 0.635mm.
4. a kind of aluminium nitride multi-layer ceramics according to claim 1 is without lead chip carrier encapsulation shell, which is characterized in that
1~10 polygon cavity for accommodating chip or passive device is equipped in ceramic shell.
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| CN107452723B (en) * | 2017-07-26 | 2023-09-15 | 济南市半导体元件实验所 | High-voltage high-power silicon carbide Schottky rectifier bridge and preparation method thereof |
| CN107658270B (en) * | 2017-10-13 | 2020-06-30 | 中国电子科技集团公司第十三研究所 | Ceramic shell for power converter |
| CN111146150B (en) * | 2019-12-04 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | Ceramic shell for packaging power metal oxide semiconductor field effect transistor and preparation method thereof |
| CN111599788B (en) * | 2020-05-09 | 2022-04-01 | 中国电子科技集团公司第十三研究所 | Test method of high-frequency leadless ceramic shell with 0.5mm pitch |
| CN111599790B (en) * | 2020-05-13 | 2021-12-24 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging shell |
| CN111599789B (en) * | 2020-05-13 | 2022-07-08 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging structure |
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| US5702985A (en) * | 1992-06-26 | 1997-12-30 | Staktek Corporation | Hermetically sealed ceramic integrated circuit heat dissipating package fabrication method |
| JP2009135353A (en) * | 2007-12-03 | 2009-06-18 | Panasonic Corp | Semiconductor device and resin adhesive used to manufacture the same |
| CN203165873U (en) * | 2013-03-29 | 2013-08-28 | 中国航天科技集团公司第九研究院第七七一研究所 | Packaging shell with cavities at two sides |
| CN103500737B (en) * | 2013-10-24 | 2017-01-18 | 中国兵器工业集团第二一四研究所苏州研发中心 | Overload-resistant integral LCC (Leadless Chip Carrier) package based on LTCC (Low Temperature Co-Fired Ceramic) substrate |
| CN205692822U (en) * | 2016-06-28 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | A kind of aluminium nitride multi-layer ceramics is without lead-in wire chip carrier package casing |
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