CN205863161U - Aluminium nitride multi-layer ceramics pin grid array encapsulating shell - Google Patents
Aluminium nitride multi-layer ceramics pin grid array encapsulating shell Download PDFInfo
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- CN205863161U CN205863161U CN201620653462.8U CN201620653462U CN205863161U CN 205863161 U CN205863161 U CN 205863161U CN 201620653462 U CN201620653462 U CN 201620653462U CN 205863161 U CN205863161 U CN 205863161U
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- aluminium nitride
- ceramic package
- grid array
- pin grid
- shell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of aluminium nitride multi-layer ceramics pin grid array encapsulating shell, relate to technical field of electronic encapsulation.This utility model includes ceramic package, and ceramic package is aluminium nitride material.This utility model has the advantages that wiring density is high, heat-sinking capability is strong and reliability is high, required for power model miniaturization, can effectively solve a difficult problem for integrated microcircuit high density, high power package.
Description
Technical field
This utility model relates to technical field of electronic encapsulation, outside specifically a kind of aluminium nitride multi-layer ceramics pin grid array package
Shell.
Background technology
Pin grid array CPGA-Ceramic Pin Grid Array encapsulation is plug-in mounting packing forms the most frequently used for VLSI, its
Packaging density is high, electric heating property is good, and air-tightness is good, and reliability is high.
Along with complete electronic set and electronic devices and components towards miniature, light weight, at a high speed, efficiently, high integration, high reliability and big
The directions such as power output are fast-developing, and in device unit volume, produced heat sharply increases, and this is to substrate and encapsulating material
Heat radiation propose requirements at the higher level.If heat can not be distributed in time by substrate, device will be difficult to normally work, serious feelings
Under condition, even can burn.
Domestic high density, high power package mainly use alumina ceramic material, metal material, aluminium oxide ceramics+height
Heat Conduction Material (tungsten copper, molybdenum copper and CPC etc.), ltcc substrate material+aluminium oxide ceramics and ltcc substrate material+metal material,
There is presently no multi-layers carbon fiber cloth based on aluminium nitride technology.Al2O3Thermal conductivity relatively low, thermal coefficient of expansion and silicon are less
Join；Although metal material has higher heat conductivity, but the coefficient of thermal expansion mismatch higher with chip substrate is difficult to meet big merit
The encapsulation requirement of rate device, and the shell integrated level of employing metal material is relatively low；Aluminium oxide ceramics+highly heat-conductive material (tungsten copper, molybdenum
Copper and CPC etc.) although having higher heat conductivility, but owing to make it have higher mechanical performance, it is necessary that pipe
Shell and highly heat-conductive material have certain welded lap size, could realize the soldering reliability of shell and highly heat-conductive material, this
Limit the miniaturization of its size, and the shell integrated level of employing highly heat-conductive material is relatively low, therefore this kind of pattern shell is difficult to real
Existing miniaturization and integrated；After ltcc substrate combines with aluminium oxide ceramics or metal material, although thermal coefficient of expansion can be solved
The problem of mismatch, but thermal conductivity is only 30W/m.K, and the capacity of heat transmission is more weak；With other material comparatively, AlN combination property is excellent
Different, it is a new generation's high integration and the preferable substrate of power device and encapsulating material.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of aluminium nitride multi-layer ceramics pin grid array encapsulating shell,
Have the advantages that wiring density is high, heat-sinking capability is strong and reliability is high, required for power model miniaturization, can effectively solve collection
Become microcircuit high density, a difficult problem for high power package.
For solving above-mentioned technical problem, technical solution adopted in the utility model is: a kind of aluminium nitride multi-layer ceramics pin
Grid array package shell, including ceramic package, ceramic package is aluminium nitride material.
Further preferred technical scheme, ceramic package opening upwards, ceramic package opening part is provided with metal seal ring, pottery
The bottom lower surface of ceramic shell is provided with the metal lead wire of array arrangement.
Further preferred technical scheme, the upper base surface of ceramic package is provided with 1～10 for accommodating chip or nothing
The polygon cavity of source device.
Further preferred technical scheme, the material of metal seal ring is ferrum nickel or teleoseal.
Further preferred technical scheme, ceramic package is 2 layers to 30 layers wire structures.
Further preferred technical scheme, the pitch of metal lead wire is 2.54mm, 1.27mm or 1.00mm.
Use and have the beneficial effects that produced by technique scheme: aluminium nitride ceramics shell is based primarily upon high heat conduction nitridation
Aluminum multilayer technique, aluminium nitride multi-layer ceramics technology makes the design of aluminium nitride ceramics product more flexible, it is possible to realize electrical property,
Hot property, the design optimization of mechanical performance, it is possible to realize Multicarity, multilayer wiring, many via interconnections and bubble-tight encapsulation knot
Structure, meets the different needs of device, module and assembly, it is achieved the high power of device, module and assembly, high density, miniaturization and
Highly reliable requirement.
Accompanying drawing explanation
Fig. 1 is the front view of one embodiment of this utility model；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is the upward view of Fig. 1；
Fig. 4 is the structural representation of this utility model upper and lower cavity row shell；
In figure: 1, ceramic package；2, metal lead wire；3, polygon cavity；4, metal seal ring.
Detailed description of the invention
With detailed description of the invention, this utility model is described in further detail below in conjunction with the accompanying drawings.
This utility model is aluminium nitride ceramics shell 1, sees shown in Fig. 1-Fig. 3, and ceramic package 1 is aluminium nitride material, pottery
Ceramic shell 1 opening upwards, the opening part of ceramic package 1 is provided with metal seal ring 4, and the bottom lower surface of ceramic package 1 is provided with battle array
The metal lead wire 2 of row arrangement.Ceramic package 1 can have 1～10 for the polygon cavity 3 accommodating chip or passive device；
Ceramic package 1 can have the wire structures of 2 layers to 30 layers；The exit pitch that such shell is conventional has 2.54mm regularly arranged,
2.54mm is staggered, and the arrangement of 1.27mm and 1.00mm narrow pitch, can be divided into cavity according to opening direction with lead-in wire direction
To mo(u)ld top half as shown in Figure 1, cavity is to mo(u)ld bottom half and the upper and lower various structures such as cavity type (as shown in Figure 4).Cavity draws to mo(u)ld top half metal
Line 2 and finalization area not in shell the same side, its structure be prone to rear road install and can additional supply ground plane, electrical to improve shell
Can, it is generally used for large size chip being installed or multiple chip being installed simultaneously；Cavity exists with finalization area to mo(u)ld bottom half structural metal lead-in wire 2
Shell the same side, can install radiator at shell rear surface, strengthen shell heat-sinking capability.Therefore, it is typically based on shell purposes to set
Count its cavity pattern.This utility model possess can the feature such as multilayer wiring, high reliability, high-air-tightness, have wiring density high,
The feature that heat-sinking capability is strong and reliability is high, can effectively reduce integrated rear device volume and weight, it is achieved miniaturization, meet power
Device cooling requirements；Aluminium nitride multi-layers carbon fiber cloth is mainly used in laser diode, high-brightness LED, RF and microwave packaging, radar
Module encapsulation, power module package, power module, IR detector, CCD, cmos imaging system, Switching Power Supply, high-power integrated
The encapsulation of the devices such as circuit；Such shell can built-in ltcc substrate, carry out three-dimensional encapsulation, there is superior bearing capacity, and
It is advantageously integrated multiple hydrid integrated circuit, there is volume little, lightweight, the features such as Pin arrangement mode is the most various, extensively should
For power electronics, Aero-Space, national defense and military, automobile and locomotive, communication and other industrial circle.
PGA series aluminium nitride multi-layers carbon fiber cloth by metal lead wire, aluminium nitride ceramics body, metal seal ring 4(can basis
Customer demand determine with or without) and heat sink (can according to customer demand determine with or without) composition, according to user profile, determine cavity chi
Very little, according to plate electrode installation requirement, determine lead-in wire arrangement and the interconnected relationship of internal wiring, carry out structure on this basis and set
Meter, and carry out structure and electrical property emulation, it is ensured that its structural reliability and heat radiation and requirement on electric performance.Metal lead wire is used for realizing
Chip plays fixed support tube shell effect with outside PCB substrate interconnection simultaneously；Metal seal ring 4 is for gold stannum sealing, parallel seam welding
Or the seam welding sealing of laser, heat sink for chip ground or heat radiation.
Metal seal ring 4 material is ferrum nickel or teleoseal, and heat sink material is that oxygen-free copper, molybdenum copper, tungsten copper and CPC are contour
Conducting alloy material.
PGA class aluminium nitride multi-layers carbon fiber cloth uses AlN multi-layer ceramics altogether burning technology, and idiographic flow is: shell through curtain coating,
After Re Qie, after rushing chamber and punching, hole metallization, through printing, position, be laminated, earnestly become single green part, then by sintering, plating
Nickel, the single power device of gold-plated rear formation or the PGA class aluminium nitride Multi-layer ceramic package shell of other device.
Aluminium nitride multi-layers carbon fiber cloth compared with conventional LTCC integrated casing or alumina ceramic envelope, aluminium nitride ceramics
Having higher thermal conductivity, high heat conductance reaches 180W/m.K.Can be prevented effectively from that device temperature is too high and cisco unity malfunction
The problem even scrapped, can meet power device cooling requirements；It has relatively low thermal coefficient of expansion (4.7ppm) simultaneously, with silicon
Quite, solve ceramic cartridge and chip CTE unmatched problem when chip is installed, effectively discharge stress, improve chip
Installation reliability.
Table 1 is aluminium nitride ceramics package casing and conventional LTCC integrated casing or aluminium oxide ceramics package casing performance pair
Ratio:
Table 1
Aluminium nitride (AlN) pottery has high thermal conductivity, and (theoretical thermal conductivity is 320W/m.K, for 10 times of aluminium oxide ceramics
Left and right).The radiating efficiency of device can be effectively improved after using aluminium nitride ceramics, reduce junction temperature, the reliability improving device and longevity
Life.
Aluminium nitride ceramics is a kind of novel high thermal conductive substrate and encapsulating material, has high thermal conductivity, low thermal expansion
Coefficient, low dielectric constant and the feature such as dielectric loss, high mechanical strength, its thermal coefficient of expansion and the chip such as silicon and GaAs
Material matches, insulating properties and dielectric property good, and material under high temperature intensity is big, and environment-protecting asepsis, chemical stability are good, extensively
General for high power electronic field.Aluminium nitride multi-layer ceramics technology makes the design of aluminium nitride ceramics product more flexible, it is possible to
Realize the design optimization of electrical property, hot property, mechanical performance, it is possible to realize Multicarity, multilayer wiring, many via interconnections and airtight
The encapsulating structure of property, meets the different needs of device, module and assembly, it is achieved the high power of device, module and assembly, highly dense
Degree, miniaturization and highly reliable requirement.
Claims (3)
1. an aluminium nitride multi-layer ceramics pin grid array encapsulating shell, including ceramic package (1), it is characterised in that ceramic package
(1) it is aluminium nitride material；Ceramic package (1) opening upwards, upper and lower cavity type, the opening part of ceramic package (1) is provided with metal envelope
Choma (4), the bottom lower surface of ceramic package (1) is provided with the metal lead wire (2) of array arrangement；The pitch of metal lead wire (2) is
2.54mm, 1.27mm or 1.00mm；Ceramic package (1) upper base surface is provided with 1～10 for accommodating chip or passive device
Polygon cavity (3).
Aluminium nitride multi-layer ceramics pin grid array encapsulating shell the most according to claim 1, it is characterised in that metal seal ring
(4) material is ferrum nickel or teleoseal.
Aluminium nitride multi-layer ceramics pin grid array encapsulating shell the most according to claim 1, it is characterised in that ceramic package
(1) it is 2 layers to 30 layers wire structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620653462.8U CN205863161U (en) | 2016-06-28 | 2016-06-28 | Aluminium nitride multi-layer ceramics pin grid array encapsulating shell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620653462.8U CN205863161U (en) | 2016-06-28 | 2016-06-28 | Aluminium nitride multi-layer ceramics pin grid array encapsulating shell |
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| CN205863161U true CN205863161U (en) | 2017-01-04 |
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| CN201620653462.8U Active CN205863161U (en) | 2016-06-28 | 2016-06-28 | Aluminium nitride multi-layer ceramics pin grid array encapsulating shell |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952889A (en) * | 2017-05-19 | 2017-07-14 | 中国电子科技集团公司第十三研究所 | The ceramic pinboard installed for large-size ceramic shell |
| CN107221504A (en) * | 2017-05-27 | 2017-09-29 | 中国电子科技集团公司第十三研究所 | Surface array charge-coupled device encapsulation ceramic package and preparation method thereof |
| CN107424959A (en) * | 2017-09-14 | 2017-12-01 | 中国电子科技集团公司第十三研究所 | Ceramic pin grid array surgeon's needle pilot protection pad |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN110060985A (en) * | 2019-04-26 | 2019-07-26 | 西安微电子技术研究所 | A kind of small-sized integrated multipath analog switch |
| CN112151477A (en) * | 2020-08-20 | 2020-12-29 | 山东航天电子技术研究所 | System-in-package housing and application |
| CN117334689A (en) * | 2023-10-26 | 2024-01-02 | 华中科技大学 | High-temperature wide forbidden band power module and preparation method thereof |
-
2016
- 2016-06-28 CN CN201620653462.8U patent/CN205863161U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952889A (en) * | 2017-05-19 | 2017-07-14 | 中国电子科技集团公司第十三研究所 | The ceramic pinboard installed for large-size ceramic shell |
| CN107221504A (en) * | 2017-05-27 | 2017-09-29 | 中国电子科技集团公司第十三研究所 | Surface array charge-coupled device encapsulation ceramic package and preparation method thereof |
| CN107221504B (en) * | 2017-05-27 | 2020-08-18 | 中国电子科技集团公司第十三研究所 | Ceramic shell for packaging area array charge coupled device and manufacturing method thereof |
| CN107424959A (en) * | 2017-09-14 | 2017-12-01 | 中国电子科技集团公司第十三研究所 | Ceramic pin grid array surgeon's needle pilot protection pad |
| CN107424959B (en) * | 2017-09-14 | 2023-08-04 | 中国电子科技集团公司第十三研究所 | Needle-lead protection pad for ceramic needle grid array shell |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN110060985A (en) * | 2019-04-26 | 2019-07-26 | 西安微电子技术研究所 | A kind of small-sized integrated multipath analog switch |
| CN110060985B (en) * | 2019-04-26 | 2021-07-23 | 西安微电子技术研究所 | Small-sized integrated multi-channel analog switch |
| CN112151477A (en) * | 2020-08-20 | 2020-12-29 | 山东航天电子技术研究所 | System-in-package housing and application |
| CN117334689A (en) * | 2023-10-26 | 2024-01-02 | 华中科技大学 | High-temperature wide forbidden band power module and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |