CN105870085A - Aluminum nitride multilayer-ceramic leadless platy carrier packaging shell - Google Patents
Aluminum nitride multilayer-ceramic leadless platy carrier packaging shell Download PDFInfo
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- CN105870085A CN105870085A CN201610483600.7A CN201610483600A CN105870085A CN 105870085 A CN105870085 A CN 105870085A CN 201610483600 A CN201610483600 A CN 201610483600A CN 105870085 A CN105870085 A CN 105870085A
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- aluminium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
Abstract
The invention discloses an aluminum nitride multilayer-ceramic leadless platy carrier packaging shell and relates to the technical field of electronic packaging. The aluminum nitride multilayer-ceramic leadless platy carrier packaging shell comprises a ceramic shell, the peripheral outer wall of the ceramic shell is provided with a metal conduction channel, the ceramic shell is made with aluminum nitride, the ceramic shell includes an upper cavity which opens up in the front and a lower cavity which opens down in the back, a base plate is disposed between the upper cavity and the lower cavity, both the lower surface and upper surface of the base plate are provided with bonding areas to bond chips or passive devices, the periphery of the bonding areas is provided with a lead bonding area, the lead bonding areas can be connected with the chips bonded to the bonding areas through bonding wires, and the lead bonding areas are connected with the metal conduction channel; the periphery of the lead bonding area is provided with a sealing area, a leading-out end pad is arranged at the periphery of the sealing area on the lower surface of the ceramic shell, and the leading-out end pad is communicated with the metal conduction channel. The aluminum nitride multilayer-ceramic leadless platy carrier packaging shell is effective in improving heat-radiating efficiency for a device, reducing junction temperature, improving reliability of the device and prolonging service life of the device.
Description
Technical field
The present invention relates to technical field of electronic encapsulation, particularly relate to a kind of aluminium nitride multi-layer ceramics without lead-in wire chip carrier package casing.
Background technology
Along with complete electronic set and electronic devices and components towards miniature, light weight, at a high speed, efficiently, the direction such as high integration, high reliability and high-power output fast-developing, in device unit volume, produced heat sharply increases, and this proposes requirements at the higher level to the heat radiation of substrate and encapsulating material.If heat can not be distributed in time by substrate, device will be difficult to normally work, and under serious conditions, even can burn.
Domestic high density, high power package mainly use alumina ceramic material, metal material, aluminium oxide ceramics+highly heat-conductive material (tungsten copper, molybdenum copper and CPC etc.), ltcc substrate material+aluminium oxide ceramics and ltcc substrate material+metal material, there is presently no multi-layers carbon fiber cloth based on aluminium nitride technology.Al2O3Thermal conductivity relatively low, thermal coefficient of expansion and silicon less mate；Although metal material has higher heat conductivity, but the coefficient of thermal expansion mismatch higher with chip substrate is difficult to meet the encapsulation requirement of high power device, and the shell integrated level of employing metal material is relatively low；Aluminium oxide ceramics+highly heat-conductive material (tungsten copper, molybdenum copper and CPC etc.) is although having higher heat conductivility, but owing to make it have higher mechanical performance, it is necessary that shell and highly heat-conductive material have certain welded lap size, the soldering reliability of shell and highly heat-conductive material could be realized, which limits the miniaturization of its size, and use the shell integrated level of highly heat-conductive material relatively low, therefore this kind of pattern shell is difficulty with miniaturization and integrated；After ltcc substrate combines with aluminium oxide ceramics or metal material, although the problem that coefficient of thermal expansion mismatch can be solved, but thermal conductivity is only 30W/m.K, the capacity of heat transmission is more weak, needs thermal hole or begins to speak to weld tungsten copper radiating block, and the intensity after combination is low, poor reliability, metal base plate need to be welded for increasing intensity, solder can only be used to assemble, assemble ability；With other material comparatively, AlN excellent combination property, it is a new generation's high integration and the preferable substrate of power device and encapsulating material.
Summary of the invention
The technical problem to be solved is to provide a kind of aluminium nitride multi-layer ceramics without lead-in wire chip carrier package casing, can be effectively improved the radiating efficiency of device, reduce junction temperature, the reliability improving device and life-span.
For solving above-mentioned technical problem, the technical solution used in the present invention is:
A kind of aluminium nitride multi-layer ceramics is without lead-in wire chip carrier package casing, including ceramic package, the lateral wall of ceramic package surrounding is provided with metal conduction groove, ceramic package is that aluminium nitride material is made, ceramic package includes facing up the upper cavity of opening and the lower chamber that reverse side is downwardly open, centre is substrate, lower surface and upper surface at substrate are equipped with the adhesion zone for adhering chip or passive device, the periphery of adhesion zone is provided with wire bonding district, wire bonding district can be connected by bonding wire with the chip being bonded on adhesion zone, wire bonding district is connected with metal conduction groove；Periphery, wire bonding district is provided with seal area, is provided with exit pad in the periphery of the seal area of the lower surface of ceramic package, and exit pad connects with metal conduction groove.
Further preferred technical scheme, the transverse section of metal conduction groove is semicircle, the structure of the two groups of metal conduction grooves arranged on two relative lateral walls is: the metal level of metal conduction groove inwall is arranged on the bottom of metal conduction groove, the non-metal cladding in upper end of metal conduction groove；Meanwhile, at relative another two groups of metal conduction grooves, the metal level of metal conduction groove inwall is arranged on the top of metal conduction groove, the non-metal cladding in bottom of metal conduction groove.
Further preferred technical scheme, the aperture of metal conduction groove is 0.15～0.60mm.
Further preferred technical scheme, the pitch of exit pad is the one in 1.27mm, 1.016mm, 0.80mm, 0.65mm, 0.635mm.
Further preferred technical scheme, is provided with 1～10 for the polygon cavity accommodating chip or passive device in ceramic package.
Use and have the beneficial effects that produced by technique scheme:
(1) present invention is primarily based on high heat conduction aluminium nitride multilayer technique, possess the features such as multilayer wiring, high reliability, high-air-tightness, have the advantages that wiring density is high, heat-sinking capability is strong, self-strength is high, reliability is high；
(2) integrated rear device volume and weight can be effectively reduced, it is achieved miniaturization, high density, high integration encapsulate, and meet power device cooling requirements, can effectively solve a difficult problem for integrated microcircuit high density high power package；
(3) packaging air tightness is high: air-tightness meets≤1 × 10-3 Pa cm3/s, A4；
(4) side metal conduction trough, meets plate level installation requirement, it is simple to plate level welding effect checks；
(5) conductive path between wire bonding district and exit pad is shorter, and in packaging body, the encapsulation such as routing resistance and inductance parasitic parameter is the lowest, has the electrical property of excellence；
(6) good environmental adaptability, resistance to corrosion is strong, can meet salt fog 48h, circulates 100 times, moisture-proof 10 times at temperature cycles-65 DEG C-150 DEG C；
(7) Mechanical Reliability is high, can meet constant acceleration 30000g, Y1 direction, 1min；
(8) shelf-stable performance is good；
(9) applied range, because it has high reliability and high-air-tightness, can be applicable to the fields such as Aeronautics and Astronautics.
Accompanying drawing explanation
Fig. 1 is the front view of the present invention；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is the upward view of Fig. 1；
In figure: 1, metal conduction groove；2, wire bonding district；3, adhesion zone；4, seal area；5, ceramic package；6, lower chamber；7, upper cavity；8, exit pad.
Detailed description of the invention
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.
The present invention includes ceramic package 5, ceramic package 5 is made for aluminium nitride material, the tow sides of described ceramic package 5 are respectively equipped with upper cavity 7 and lower chamber 6, see Fig. 2, Fig. 3, exit pad 8 is arranged on the lower surface of ceramic package 5, the bottom of upper cavity 7 and lower chamber 6 is provided with the adhesion zone 3 for adhering chip or passive device, adhesion zone 3 be formed around wire bonding district 2, wire bonding district 2 is connected with the chip bonding wire being adhered on adhesion zone 3, and exit pad 8 is connected with wire bonding district 2.
Two groups of metal conduction grooves 1 shown in Figure 1, that arrange on two relative lateral walls, the metal level of metal conduction groove 1 inwall is arranged on the bottom of metal conduction groove 1, the non-metal cladding in upper end of metal conduction groove 1；Meanwhile, at relative another two groups of metal conduction grooves 1, the metal level of metal conduction groove 1 inwall is arranged on the top of metal conduction groove 1, the non-metal cladding in bottom of metal conduction groove 1.The realization inside that arranges of metal conduction groove is bonded, its advantage is: wire bonding district realizes electrically connecting by the metal conduction groove of shell side with exit pad, adopt in this way, can effectively reduce the conductive path between wire bonding district and exit pad, and due to the sheet resistance relatively low (about 7m Ω) of gold, significantly reduce the encapsulation parasitic parameter filling internal routing resistance and inductance etc., so that shell has the electrical property of excellence；Use side metal conduction trough, can effectively reduce para-position difficulty when plate level is installed simultaneously, be effectively improved the positional precision of plate level erecting and welding, meet plate level installation requirement and be easy to plate level welding effect inspection.
Ceramic package of the present invention uses aluminium nitride material, and aluminium nitride ceramics has higher thermal conductivity, and high heat conductance reaches 180W/m.K.The problem that device temperature is too high and cisco unity malfunction is even scrapped can be prevented effectively from, power device cooling requirements can be met；It has relatively low thermal coefficient of expansion (4.7ppm) simultaneously, suitable with silicon, can solve ceramic cartridge and chip CTE unmatched problem when chip is installed, effectively discharge stress, improve chip installation reliability.
Aluminium nitride ceramics shell of the present invention possesses can the feature such as multilayer wiring, high reliability, high-air-tightness, have the advantages that wiring density is high, heat-sinking capability is strong and reliability is high, integrated rear device volume and weight can be effectively reduced, it is achieved miniaturization, meet power device cooling requirements；Ceramic package can have 1～10 for the polygon cavity accommodating chip or passive device；Ceramic package can have the wire structures of 2 layers to 30 layers；The exit pitch that such shell is conventional has 1.27mm, 1.016mm, 0.80mm, 0.65mm, 0.635mm.The exit pad 8 of such ceramic package is symmetrical in both sides or uniformly arranges in four limits.Common exit form has 2 kinds, and a kind of is that exit pad 8 is attached with the metal conduction groove of four flank side surface being bonded with ceramic package, and another kind is that bonding refers to use the interconnection of buried regions form with exit.The metal conduction slot aperture 0.15～0.60mm that exit form uses, the length 0.15～4.00mm of hollow hole.
Aluminium nitride multi-layers carbon fiber cloth is mainly used in laser diode, high-brightness LED, RF and microwave packaging, radar module encapsulation, power module package, power module, IR detector, CCD, the encapsulation of the devices such as cmos imaging system, Switching Power Supply, high-power integrated circuit.The lead-in wire pitch that such shell is conventional has 1.27mm, 1.016mm, 0.80mm, 0.65mm, 0.635mm, there is the features such as parasitic parameter is little, volume is little, lightweight, good heat dissipation, be suitable to surface install, have cavity downwards and cavity upwards and the various structures such as two-sided cavity, in inside cavity, one or more subregion can be set in order to install multiple chip and multiple passive device, meet the requirement of user's high integration encapsulation, can be widely applied to power electronics, Aero-Space, national defense and military, automobile and locomotive, communication and other industrial circle.
The aluminium nitride ceramics package casing of LCC series is made up of aluminium nitride ceramics body, metal seal ring (can according to customer demand determine with or without) and heat sink (can according to customer demand determine with or without), according to user profile, determine cavity size, according to plate electrode installation requirement, determine lead-in wire arrangement and the interconnected relationship of internal wiring, carry out structure design on this basis, and carry out structure and electrical property emulation, it is ensured that its structural reliability and heat radiation and requirement on electric performance.
Metal seal ring material is ferrum nickel or teleoseal, and heat sink material is the high thermal conductivity alloy materials such as oxygen-free copper, molybdenum copper, tungsten copper and CPC.Metal seal ring is for gold stannum sealing, parallel seam welding or the seam welding sealing of laser, heat sink for chip ground or heat radiation.
LCC class aluminium nitride multi-layers carbon fiber cloth uses AlN multi-layer ceramics burning technology altogether, idiographic flow is: shell through curtain coating, earnestly after, after rushing chamber and punching, hole metallization, through printing, position, be laminated, earnestly become single green part, then by sintering, nickel plating, the single power device of gold-plated rear formation or the LCC class aluminium nitride Multi-layer ceramic package shell of other device.
The present invention uses aluminium nitride (AlN) pottery as package casing, and aluminium nitride (AlN) has high thermal conductivity (theoretical thermal conductivity is 320W/m.K, for about 10 times of aluminium oxide ceramics).The radiating efficiency of device can be effectively improved after using aluminium nitride ceramics, reduce junction temperature, the reliability improving device and life-span.
The packing forms of the present invention is the aluminium nitride multi-layers carbon fiber cloth of ceramic leadless chip (LCC-Ceramic Leadless Chip Carrier).Aluminium nitride ceramics is a kind of novel high thermal conductive substrate and encapsulating material, there is high thermal conductivity, low thermal coefficient of expansion, low dielectric constant and the feature such as dielectric loss, high mechanical strength, its thermal coefficient of expansion and the chip material such as silicon and GaAs match, insulating properties and dielectric property good, material under high temperature intensity is big, environment-protecting asepsis, chemical stability are good, are widely used in high power electronic field.Aluminium nitride multi-layer ceramics technology makes the design of aluminium nitride ceramics product more flexible, provide a kind of shortcut that can more preferably realize device, module and assembly property, it is capable of the design optimization of electrical property, hot property, mechanical performance, it is capable of Multicarity, multilayer wiring, many via interconnections and bubble-tight encapsulating structure, disclosure satisfy that the different needs of device, module and assembly, it is achieved the high power of device, module and assembly, high density, miniaturization and highly reliable requirement.
Use and have the beneficial effects that produced by the present invention:
(1) present invention is primarily based on high heat conduction aluminium nitride multilayer technique, possess the features such as multilayer wiring, high reliability, high-air-tightness, have the advantages that wiring density is high, heat-sinking capability is strong, self-strength is high, reliability is high；
(2) integrated rear device volume and weight can be effectively reduced, it is achieved miniaturization, high density, high integration encapsulate, and meet power device cooling requirements, can effectively solve a difficult problem for integrated microcircuit high density high power package；
(3) packaging air tightness is high: air-tightness meets≤1 × 10-3 Pa cm3/s, A4, to a kind of leak hunting method not sealing shell during wherein A4 is GJB548B, it is therefore an objective to determine the air-tightness of microelectronic component and the semiconductor packages with inner chamber；
(4) side metal conduction trough, meets plate level installation requirement, it is simple to plate level welding effect checks；
(5) conductive path between wire bonding district and exit pad is shorter, and in packaging body, the encapsulation such as routing resistance and inductance parasitic parameter is the lowest, has the electrical property of excellence；
(6) good environmental adaptability, resistance to corrosion is strong, can meet salt fog 48h, circulates 100 times, moisture-proof 10 times at temperature cycles-65 DEG C-150 DEG C；
(7) Mechanical Reliability is high, can meet constant acceleration 30000g, Y1 direction, 1min；Wherein, use Constant Acceleration Test equipment to determine the constant acceleration impact on microelectronic component, unless otherwise specified, in X1, X2, Y1, Y2, Z1, Z2 all directions, device should be applied 1min and specify vertical constant acceleration；
(8) shelf-stable performance is good；
(9) applied range, because it has high reliability and high-air-tightness, can be applicable to the fields such as Aeronautics and Astronautics.
Claims (5)
1. an aluminium nitride multi-layer ceramics is without lead-in wire chip carrier package casing, including ceramic package (5), the lateral wall of ceramic package (5) surrounding is provided with metal conduction groove (1), it is characterized in that, ceramic package (5) is that aluminium nitride material is made, ceramic package (5) includes facing up the upper cavity (7) of opening and the lower chamber (6) that reverse side is downwardly open, centre is substrate, lower surface and upper surface at substrate are equipped with the adhesion zone (3) for adhering chip or passive device, the periphery of adhesion zone (3) is provided with wire bonding district (2), wire bonding district (2) can be connected by bonding wire with the chip being bonded on adhesion zone (3), wire bonding district (2) is connected with metal conduction groove (1)；Wire bonding district (2) periphery is provided with seal area (4), is provided with exit pad (8) in the periphery of the seal area (4) of the lower surface of ceramic package (5), and exit pad (8) connects with metal conduction groove (1).
A kind of aluminium nitride multi-layer ceramics the most according to claim 1 is without lead-in wire chip carrier package casing, it is characterized in that, the transverse section of metal conduction groove (1) is semicircle, the structure of the two groups of metal conduction grooves (1) arranged on two relative lateral walls is: the metal level of metal conduction groove (1) inwall is arranged on the bottom of metal conduction groove (1), the non-metal cladding in upper end of metal conduction groove (1)；Meanwhile, relative another two groups of metal conduction grooves (1), the metal level of metal conduction groove (1) inwall is arranged on the top of metal conduction groove (1), the non-metal cladding in bottom of metal conduction groove (1).
A kind of aluminium nitride multi-layer ceramics the most according to claim 1 is without lead-in wire chip carrier package casing, it is characterised in that the aperture of metal conduction groove (1) is 0.15～0.60mm.
A kind of aluminium nitride multi-layer ceramics the most according to claim 1 is without lead-in wire chip carrier package casing, it is characterised in that the pitch of exit pad (8) is the one in 1.27mm, 1.016mm, 0.80mm, 0.65mm, 0.635mm.
A kind of aluminium nitride multi-layer ceramics the most according to claim 1 is without lead-in wire chip carrier package casing, it is characterised in that be provided with 1～10 in ceramic package for the polygon cavity accommodating chip or passive device.
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| CN201610483600.7A CN105870085B (en) | 2016-06-28 | 2016-06-28 | A kind of aluminium nitride multi-layer ceramics is without lead chip carrier encapsulation shell |
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| CN107452723A (en) * | 2017-07-26 | 2017-12-08 | 济南市半导体元件实验所 | A kind of high-power silicon carbide schottky rectifier bridge and preparation method thereof |
| CN107658270A (en) * | 2017-10-13 | 2018-02-02 | 中国电子科技集团公司第十三研究所 | Power supply changeover device ceramic package |
| CN111146150A (en) * | 2019-12-04 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Ceramic shell for packaging power metal oxide semiconductor field effect transistor and preparation method thereof |
| CN111599789A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging structure |
| CN111599788A (en) * | 2020-05-09 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | 0.5mm pitch high-frequency leadless ceramic shell and test method |
| CN111599790A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging shell |
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| CN111146150A (en) * | 2019-12-04 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Ceramic shell for packaging power metal oxide semiconductor field effect transistor and preparation method thereof |
| CN111146150B (en) * | 2019-12-04 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | Ceramic shell for packaging power metal oxide semiconductor field effect transistor and preparation method thereof |
| CN111599788A (en) * | 2020-05-09 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | 0.5mm pitch high-frequency leadless ceramic shell and test method |
| CN111599789A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging structure |
| CN111599790A (en) * | 2020-05-13 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging shell |
| CN111599790B (en) * | 2020-05-13 | 2021-12-24 | 中国电子科技集团公司第十三研究所 | Ceramic leadless chip type packaging shell |
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| CN105870085B (en) | 2018-09-14 |
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