CN205406521U - Highly reliable nothing lead wire ball foot table pastes formula thick film hybrid integrated circuit - Google Patents
Highly reliable nothing lead wire ball foot table pastes formula thick film hybrid integrated circuit Download PDFInfo
- Publication number
- CN205406521U CN205406521U CN201620151389.4U CN201620151389U CN205406521U CN 205406521 U CN205406521 U CN 205406521U CN 201620151389 U CN201620151389 U CN 201620151389U CN 205406521 U CN205406521 U CN 205406521U
- Authority
- CN
- China
- Prior art keywords
- chip
- ceramic substrate
- thick film
- aluminium nitride
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
The utility model provides a highly reliable nothing lead wire ball foot table pastes formula thick film hybrid integrated circuit installs alumina ceramics substrate and aluminium nitride ceramic substrate on the base, miniwatt chip and high -power chip arrange respectively on alumina ceramics substrate and aluminium nitride ceramic substrate, the base with between two kinds of ceramic substrates, it has the metal throuth hole to open, end welded ball is drawn forth to the bottom surface of base, miniwatt chip and semiconductor unpacked chip weld respectively in corresponding metal bonding district, and chip level encapsulation chip and sensor signal handle the chip welding on the ball -type weld zone, and it has thermistor to integrate in the front of aluminium nitride ceramic substrate, has thick film insulating medium membrane on it, and high -power install the chip is epimembranal in thick film insulating medium. Thereby its advantage is the accessible comes the inside temperature rise of thermistor perception and takes safeguard measure, high frequency interference little, is applicable to applications such as high -power, high frequency.
Description
Technical field
This utility model relates to the device or its parts that are made up of the multiple solid-state modules formed in a shared substrate or on it or integrated circuit, relate to the connection of lead-in wire or other conductive members, during for working to or by device conducts electric current, espespecially a kind of highly reliable surface-mount type thick film hybrid integrated circuit of foot without wire ball.
Background technology
In the integrated technology of original hybrid circuit, on a ceramic substrate, semiconductor chip, chip components and parts directly being filled is attached on thick film substrate, bonding wire (spun gold or Si-Al wire) is adopted to carry out the wire bonding of chip and substrate again, the wire bonding of substrate and pin, complete whole electrical equipment to connect, finally in specific atmosphere, Guan Ji and pipe cap are sealed to form.After encapsulation the temperature rise of thick film hybrid integrated circuit cannot perception, High-frequency Interference big, be subject to certain restrictions in the equipment application such as high-power, high frequency.
Summary of the invention
For the shortcoming of prior art, the purpose of this utility model is in that to provide a kind of highly reliable surface-mount type thick film hybrid integrated circuit of foot without wire ball.
This utility model solves its technical problem and be the technical scheme is that a kind of highly reliable surface-mount type thick film hybrid integrated circuit of foot without wire ball of offer, including base, thick film conduction band, thick film stopband, thick-film capacitor, thick film inductance, semiconductor bare chip and encapsulation chip, with original thick film hybrid integrated circuit the difference is that: base is provided with alumina ceramic substrate and aluminium nitride ceramic substrate, small-power chip and high-power chip are respectively arranged on alumina ceramic substrate and aluminium nitride ceramic substrate, between base and the two ceramic substrate, have through hole, metal paste it is filled with inside through hole, form metal throuth hole；There is exit solder sphere the bottom surface of base；The front of alumina ceramic substrate is integrated with thick film conduction band, thick film stopband, thick-film capacitor, thick film inductance, and it is coated with aluminium sesquioxide porcelain insulating medium protective layer；In the semiconductor bare chip panel region that alumina ceramic substrate has been bonded, it is coated with dielectric and is coated with sealing；Semiconductor bare chip bonding wire is connected with the metal conduction band on ceramic substrate；Small-power chip and semiconductor bare chip are respectively welded in corresponding metal solder district, wafer-level package chip and transducing signal process chip soldering and are connected on ball-type weld zone, it is integrated with critesistor in the front of aluminium nitride ceramic substrate, it has insulating thick film deielectric-coating, high-power chip is installed on insulating thick film deielectric-coating, described alumina ceramic substrate and aluminium nitride ceramic substrate be backed with compound layer gold film plating layer, between the back side and base of aluminium nitride ceramic substrate, semiconductor thermoelectric frigorific unit is installed.
The beneficial effects of the utility model are: can by carrying out critesistor perception internal temperature rise thus taking protective measure, High-frequency Interference little, it is adaptable to the applications such as high-power, high frequency.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model will be further described.
Fig. 1 is structural representation of the present utility model.
In figure: 1 is base, 2 is through hole, 3 is thick film conduction band/bonding region, 4 is thick film stopband, 5 is dielectric protective layer, 6 is exit solder sphere, 7 is ball-shaped welded district, 81 is small-power chip, 82 is high-power chip, 9 is semiconductor bare chip, 10 is bonding wire, 11 is encapsulation chip, 12 are coated with sealing for dielectric, 13 is metal throuth hole, 14 is critesistor, 15 is alumina ceramic substrate, 16 is aluminium nitride ceramic substrate, 17 is insulating thick film deielectric-coating, 18 is semiconductor thermoelectric frigorific unit, 19 is compound layer gold film plating layer, 20 process chip for transducing signal.
Detailed description of the invention
Referring to accompanying drawing, a kind of highly reliable surface-mount type thick film hybrid integrated circuit of foot without wire ball of this utility model, including base 1, thick film conduction band 3, thick film stopband 4, thick-film capacitor, thick film inductance, semiconductor bare chip 9 and encapsulation chip 11, with original thick film hybrid integrated circuit the difference is that: base 1 is provided with alumina ceramic substrate 15 and aluminium nitride ceramic substrate 16, small-power chip 81 and high-power chip 82 are respectively arranged on alumina ceramic substrate 15 and aluminium nitride ceramic substrate 16, base 1 and the two ceramic substrate 15, between 16, have through hole 2, through hole 2 is internal is filled with metal paste, form metal throuth hole 13；There is exit solder sphere 6 bottom surface of base 1；The front of alumina ceramic substrate 15 is integrated with thick film conduction band 3, thick film stopband 4, thick-film capacitor, thick film inductance, and it is coated with aluminium sesquioxide porcelain insulating medium protective layer 5；In the semiconductor bare chip panel region that alumina ceramic substrate 15 has been bonded, it is coated with dielectric and is coated with sealing 12；Semiconductor bare chip 9 bonding wire 10 is connected with the metal conduction band on ceramic substrate 1；Small-power chip 81 and semiconductor bare chip 9 are respectively welded in corresponding metal solder district, wafer-level package chip 11 and transducing signal process chip 20 and are welded on ball-type weld zone 7, it is integrated with critesistor 14 in the front of aluminium nitride ceramic substrate 16, it has insulating thick film deielectric-coating 17, high-power chip 82 is installed on insulating thick film deielectric-coating 17, described alumina ceramic substrate 15 and aluminium nitride ceramic substrate 16 be backed with compound layer gold film plating layer 19, semiconductor thermoelectric frigorific unit 18 is installed between the back side of aluminium nitride ceramic substrate 16 and base 1.
Claims (1)
1. the highly reliable surface-mount type thick film hybrid integrated circuit of foot without wire ball, including base, thick film conduction band, thick film stopband, thick-film capacitor, thick film inductance, semiconductor bare chip and encapsulation chip, it is characterized in that: base is provided with alumina ceramic substrate and aluminium nitride ceramic substrate, small-power chip and high-power chip are respectively arranged on alumina ceramic substrate and aluminium nitride ceramic substrate, between base and the two ceramic substrate, have through hole, it is filled with metal paste inside through hole, forms metal throuth hole；There is exit solder sphere the bottom surface of base；The front of alumina ceramic substrate is integrated with thick film conduction band, thick film stopband, thick-film capacitor, thick film inductance, and it is coated with aluminium sesquioxide porcelain insulating medium protective layer；In the semiconductor bare chip panel region that alumina ceramic substrate has been bonded, it is coated with dielectric and is coated with sealing；Semiconductor bare chip bonding wire is connected with the metal conduction band on ceramic substrate；Small-power chip and semiconductor bare chip are respectively welded in corresponding metal solder district, wafer-level package chip and transducing signal process chip soldering and are connected on ball-type weld zone, it is integrated with critesistor in the front of aluminium nitride ceramic substrate, it has insulating thick film deielectric-coating, high-power chip is installed on insulating thick film deielectric-coating, described alumina ceramic substrate and aluminium nitride ceramic substrate be backed with compound layer gold film plating layer, between the back side and base of aluminium nitride ceramic substrate, semiconductor thermoelectric frigorific unit is installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620151389.4U CN205406521U (en) | 2016-02-29 | 2016-02-29 | Highly reliable nothing lead wire ball foot table pastes formula thick film hybrid integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620151389.4U CN205406521U (en) | 2016-02-29 | 2016-02-29 | Highly reliable nothing lead wire ball foot table pastes formula thick film hybrid integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205406521U true CN205406521U (en) | 2016-07-27 |
Family
ID=56425641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620151389.4U Active CN205406521U (en) | 2016-02-29 | 2016-02-29 | Highly reliable nothing lead wire ball foot table pastes formula thick film hybrid integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205406521U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054217A (en) * | 2017-12-18 | 2018-05-18 | 中国电子科技集团公司第四十四研究所 | The single-photon avalanche photodiode device of integrated refrigerating |
-
2016
- 2016-02-29 CN CN201620151389.4U patent/CN205406521U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054217A (en) * | 2017-12-18 | 2018-05-18 | 中国电子科技集团公司第四十四研究所 | The single-photon avalanche photodiode device of integrated refrigerating |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8586420B2 (en) | Power semiconductor arrangement and method for producing a power semiconductor arrangement | |
| JP2013219267A5 (en) | ||
| KR20150041969A (en) | Method for mounting a chip and chip package | |
| WO2017041280A1 (en) | Led device having transition substrate and encapsulation method therefor | |
| CN203536467U (en) | LED device having transition substrate | |
| CN205406521U (en) | Highly reliable nothing lead wire ball foot table pastes formula thick film hybrid integrated circuit | |
| CN107452723B (en) | High-voltage high-power silicon carbide Schottky rectifier bridge and preparation method thereof | |
| CN104518066B (en) | A kind of LED component and its method for packing with transition substrate | |
| CN103730451A (en) | Multi-chip packaging body and packaging method | |
| JP5898575B2 (en) | Semiconductor device | |
| US3504096A (en) | Semiconductor device and method | |
| WO2019062200A1 (en) | Super-power cob light source and manufacturing process therefor | |
| CN106413377A (en) | Integrated welding method for surface-mounted power device | |
| WO2017107399A1 (en) | Integrated led light source heat-conduction structure and preparation method therefor | |
| CN104934380B (en) | A kind of encapsulating structure for chip | |
| CN109813931B (en) | Ceramic silicon ceramic three-layer leadless packaging structure of high-range acceleration sensor | |
| CN203690290U (en) | Leadless planar surface mounting type thick film hybrid integrated circuit | |
| CN203491305U (en) | Electronic component | |
| CN201931183U (en) | Metal heating disc with metal mask plate | |
| CN205388969U (en) | Controllable nothing of highly reliable operating temperature lead wire ball foot table pastes formula thick film hybrid integrated circuit | |
| CN206789535U (en) | A kind of fan-out package structure of power electronic devices | |
| CN111370572B (en) | Reverse buckling welding packaging structure of airtight current sensor | |
| CN204289431U (en) | Without wire ball pin surface-mount type microwave thin-film hybrid integrated circuit | |
| CN208225874U (en) | A kind of SOT encapsulating structure | |
| CN204834605U (en) | Power module with heat pipe system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |