CN111344845A - 半导体工艺片及半导体封装体制造方法 - Google Patents
半导体工艺片及半导体封装体制造方法 Download PDFInfo
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- CN111344845A CN111344845A CN201880074101.XA CN201880074101A CN111344845A CN 111344845 A CN111344845 A CN 111344845A CN 201880074101 A CN201880074101 A CN 201880074101A CN 111344845 A CN111344845 A CN 111344845A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
- H01L2224/21—Structure, shape, material or disposition of high density interconnect preforms of an individual HDI interconnect
- H01L2224/214—Connecting portions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
Landscapes
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PCT/JP2018/032933 WO2019097819A1 (ja) | 2017-11-16 | 2018-09-05 | 半導体プロセスシートおよび半導体パッケージ製造方法 |
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US11538787B2 (en) * | 2020-10-30 | 2022-12-27 | Advanced Semiconductor Engineering, Inc. | Method and system for manufacturing a semiconductor package structure |
JP2022170157A (ja) | 2021-04-28 | 2022-11-10 | 日東電工株式会社 | 熱硬化性樹脂組成物、熱硬化性シート、及び、半導体チップ被覆部材 |
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CN1264173A (zh) * | 1999-02-03 | 2000-08-23 | 卡西欧计算机株式会社 | 半导体装置及制做方法 |
JP2005028734A (ja) * | 2003-07-11 | 2005-02-03 | Nitto Denko Corp | 積層シート |
CN101083235A (zh) * | 2006-06-02 | 2007-12-05 | 索尼株式会社 | 半导体装置及半导体装置的制造方法 |
CN103137501A (zh) * | 2011-11-28 | 2013-06-05 | 日东电工株式会社 | 半导体装置的制造方法 |
JP2013157470A (ja) * | 2012-01-30 | 2013-08-15 | Sekisui Chem Co Ltd | 半導体部品の製造方法 |
CN104733400A (zh) * | 2013-12-24 | 2015-06-24 | 日东电工株式会社 | 切割/芯片接合薄膜、半导体装置的制造方法以及半导体装置 |
US20160035667A1 (en) * | 2014-07-30 | 2016-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of Packaging Semiconductor Devices and Packaged Semiconductor Devices |
CN107017173A (zh) * | 2015-11-13 | 2017-08-04 | 日东电工株式会社 | 半导体封装体的制造方法 |
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JP2001313350A (ja) * | 2000-04-28 | 2001-11-09 | Sony Corp | チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法 |
US8258624B2 (en) | 2007-08-10 | 2012-09-04 | Intel Mobile Communications GmbH | Method for fabricating a semiconductor and semiconductor package |
JP5224111B2 (ja) | 2008-08-29 | 2013-07-03 | 日立化成株式会社 | 半導体ウェハ加工用接着フィルム |
US20110198762A1 (en) | 2010-02-16 | 2011-08-18 | Deca Technologies Inc. | Panelized packaging with transferred dielectric |
JP2012227441A (ja) | 2011-04-21 | 2012-11-15 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法および半導体装置 |
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KR20200085842A (ko) | 2020-07-15 |
TW201923995A (zh) | 2019-06-16 |
KR102600254B1 (ko) | 2023-11-08 |
WO2019097819A1 (ja) | 2019-05-23 |
JP7095978B2 (ja) | 2022-07-05 |
TWI772520B (zh) | 2022-08-01 |
JP2019091845A (ja) | 2019-06-13 |
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