CN111312817B - 具有特殊栅极外型的鳍式场效晶体管结构 - Google Patents

具有特殊栅极外型的鳍式场效晶体管结构 Download PDF

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CN111312817B
CN111312817B CN201811516618.8A CN201811516618A CN111312817B CN 111312817 B CN111312817 B CN 111312817B CN 201811516618 A CN201811516618 A CN 201811516618A CN 111312817 B CN111312817 B CN 111312817B
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gate
fin
lower half
protrusion
grid electrode
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CN111312817A (zh
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王智亿
邱诚朴
魏偟任
许田昇
曾纪昇
王尧展
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United Microelectronics Corp
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Abstract

本发明公开一种具有特殊栅极外型的鳍式场效晶体管结构，其包含一鳍部位于一基底上以及一栅极位于该基底上且横跨该鳍部，其中该栅极分为位于该鳍部的顶面上的上半部以及位于该鳍部的两侧的下半部，该栅极的该下半部在邻接该鳍部的位置处具有往该第一方向侧向延伸的突起部。

Description

具有特殊栅极外型的鳍式场效晶体管结构
技术领域
本发明涉及一种半导体结构有关，更确切地说，其涉及一种具有特殊栅极外型的鳍式场效晶体管(FinFET)结构。
背景技术
现今的金属氧化物半导体场效晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)是一种广泛使用在模拟电路与数字电路的场效晶体管，其不论在使用面积、操作速度、耗损功率，以及制造成本等方面都比以往的双载流子晶体管更具优势(Bipolar Junction Transistor,BJT)，故获得业界广泛应用。
随着MOSFET技术的演进，当栅极长度缩小到20纳米(nm)以下的时候，由于源极和漏极的距离过近，漏电流的问题会变得益加严重，而且栅极长度的缩减也使得其对通道的接触面积变小，使得栅极对通道的影响力变小。为了解决此问题，业界开发出了立体的鳍式场效晶体管(FinFET)结构，其鳍部设计可以增加栅极与通道的接触面积，故能解决上述问题。
在金属栅极替换(replacement metal gate)技术或是栅极后制(gate last)技术中，多晶硅材质的虚设栅(dummy gate)或牺牲栅会预先形成在鳍部上来形塑栅极的外型，其在后续制作工艺中才会被替换为高k值的栅极绝缘层、功函数层、以及一或多层金属层等叠层结构来形成金属栅极。
发明内容
本案即为提出一种具有特殊栅极外型的鳍式场效晶体管(FinFET)结构，其栅极与鳍部的接触位置处具有特殊的特征。
本发明的其一目的在于提出一种具有特殊栅极外型的半导体结构，其中包含一基底、一鳍部位于该基底上，该鳍部的长度方向为第一方向、以及一栅极，位于该基底上且横跨该鳍部，该栅极的长度方向为第二方向，其中该栅极分为位于该鳍部的顶面上的上半部以及位于该鳍部的两侧的下半部，该栅极的该下半部在邻接该鳍部的位置处具有往该第一方向侧向延伸的突起部。
本发明的另一目的在于提出一种半导体立体结构，其中包含一基底、一鳍部位于该基底上，该鳍部的长度方向为第一方向、以及一栅极位于该基底上且横跨该鳍部，该栅极的长度方向为第二方向，其中该栅极分为位于该鳍部的顶面上的上半部以及位于该鳍部的两侧的下半部，该栅极的该下半部在邻接该鳍部的位置处具有往该第一方向侧向延伸的突起部。
本发明的这类目的与其他目的在阅者读过下文以多种图示与绘图来描述的优选实施例细节说明后必然可变得更为明了显见。
附图说明
本说明书含有附图并于文中构成了本说明书的一部分，使阅者对本发明实施例有进一步的了解。该些图示描绘了本发明一些实施例并连同本文描述一起说明了其原理。在该些图示中：
图1为本发明优选实施例中金属氧化物半导体场效晶体管(MOSFET)的主动图案与栅极图案的布局图；
图2为本发明优选实施例中一具有特殊栅极外型的鳍式场效晶体管结构的透视图；
图3为本发明优选实施例中主动图案与栅极图案的局部放大图；以及
图4为本发明另一实施例中一具有特殊栅极外型的鳍式场效晶体管结构的透视图。
需注意本说明书中的所有图示都为图例性质，为了清楚与方便图示说明之故，图示中的各部件在尺寸与比例上可能会被夸大或缩小地呈现，一般而言，图中相同的参考符号会用来标示修改后或不同实施例中对应或类似的元件特征。
主要元件符号说明
100 基底
102 线形主动图案
102a 鳍部
103 切槽区域
104 栅极图案
104a 栅极
104b 上半部
104c 下半部
106 突起部
a,b,c 部位
D1 第一方向
D2 第二方向
具体实施方式
在下文的本发明细节描述中，元件符号会标示在随附的图示中成为其中的一部分，并且以可实行该实施例的特例描述方式来表示。这类的实施例会说明足够的细节使该领域的一般技术人士得以具以实施。为了图例清楚之故，图示中可能有部分元件的厚度会加以夸大。阅者需了解到本发明中也可利用其他的实施例或是在不悖离所述实施例的前提下作出结构性、逻辑性、及电性上的改变。因此，下文的细节描述将不欲被视为是一种限定，反之，其中所包含的实施例将由随附的权利要求来加以界定。
首先请参照图1，其为根据本发明优选实施例中金属氧化物半导体场效晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)的主动图案与栅极图案的布局图。以CMOS集成电路设计架构为例，布局区域的基底100上会界定有对应NMOS晶体管的P型阱区(未示出)，其掺有P型掺质，以及对应PMOS晶体管的N型阱区(未示出)，其掺有N型掺质。由于上述阱区并非本发明必要特征，为避免混淆本发明重点之故，图中不予示出。
如图1所示，线形主动图案102，如鳍部图案，会界定在其所对应的P型阱区域或N型阱区域上，其一般会设置成彼此间具有相同的节距P1且共同往一第一方向D1延伸。此处的节距P1指的是某一鳍部102的第一侧与邻近的另一鳍部102的第一侧之间的最短距离。再者，多条栅极图案104会界定在基底100上并设置成横跨线形主动图案102，其一般会设置成彼此间具有相同的节距P2且共同往一第二方向D2延伸，该第二方向D2通常都会与该第一方向D1正交。节距P1可能会与节距P2相同。或者，节距P1可能会与节距P2不同。须注意同列相邻的线形主动图案102之间可能具有分隔彼此的切槽(slot cut)区域103。上述的线形主动图案102与栅极图案104可经由光刻制作工艺来界定。
在实际的设置中，栅极图案104可能会含有栅极氧化层(未示出)与形成在该栅极氧化层上的导体层(未示出)。栅极图案104是供作为PMOS晶体管与PMOS晶体管的栅电极。栅极图案104两侧的线形主动图案102通常会形成有源极与漏极，如掺杂的外延硅锗结构。线形主动图案102与栅极图案104上还会形成有绝缘的介层(未示出)。接触结构(未示出)会形成在这些绝缘介层中，并与下方的栅极图案104或源极与漏极连接，以将其互连到其他线路。上述除栅极图案104以外的部分在图中都不予示出，以避免混淆本发明重点。
现在请参照图2，其为根据本发明优选实施例中一具有特殊栅极外型的鳍式场效晶体管结构的透视图。图2所示的结构部位即如图1中圆框所示的部位，其绘示出一栅极104a横跨一鳍部102a的态样。栅极104a与鳍部即为经由图1中所示栅极图案104与线形主动图案102所分别界定形成者。例如以具有栅极图案104或线形主动图案102的光致抗蚀剂或硬掩模为蚀刻掩模对材料层(如分别如硅材或是多晶硅)进行蚀刻制作工艺而形成。在金属栅极替换制作工艺或是栅极后制制作工艺中，该栅极104a可为虚设栅或牺牲栅，其预先形成在鳍部上来形塑栅极的外型，在后续制作工艺中才会被替换为高k值的栅极绝缘层、功函数层、以及一或多层金属层等叠层结构来形成金属栅极。与图1相同，为了避免混淆本发明的重点，图中除了栅极104a与鳍部102a以外的部分都不予示出。
如图2所示，鳍部102a是从基底100上突出并沿着第一方向D1的长度方向延伸，栅极104a是设置在基底100上并沿着第二方向D2的长度方向延伸。第二方向D2较佳与第一方向D1正交，但不限于此。在本发明实施例中，栅极104a分为位于鳍部102a顶面上的上半部104b以及位于鳍部102a两侧的下半部104c。其中，由于蚀刻制作工艺的因素，栅极104a在第二方向上的宽度会从下半部104c往上半部104b渐缩。同样地，栅极104a在第一方向D1上的宽度也会从下半部104c往上半部104b渐缩。鳍部102a也有这样的渐缩特征。
需特别注意的是，在本发明实施例中，如图2所示，栅极104a在其下半部104c邻接鳍部102a的位置处会具有突起部106特征，其往第一方向D1侧向突出。没有与鳍部102a邻接的栅极上半部104b则不具有这样的突起特征。此特征在图1也可观察到，可以看到栅极图案104与线形主动图案102邻接的位置处都具有这样的突起部106特征。
再者，如图1所示，可以看到图中有一些栅极图案104是仅有一侧与线形主动图案102(即鳍部)接触的。这些栅极图案104未与线形主动图案102接触的一侧是不具有此突起部106特征的，如图中的部位c所示，仅有与线形主动图案102接触的一侧会具有突起部106特征。
另一方面，如图1所示，布局平面上有许多分隔相邻线形主动图案102的切槽区域103，这些区域使得单列的线形主动图案102可被断开成数段线形主动图案102。可以从图中看到有些栅极图案104是具有邻近切槽区域103的一侧与未邻近切槽区域103的一侧。其中，朝向邻近切槽区域103突出的突起部106的突起程度会大于其未具有邻近切槽区域103的该突起部的突出程度。例如，图1中部位a的突起部106的突起程度大于部位b的突起部106的突起程度。
图3为图1中虚框所示区域的局部放大图。前述的部位a与部位b的突起部106特征以及部位c不具备突起部106的特征在图3的局部放大图中有更清楚的表示。
现在请参照图4，其为根据本发明另一实施例中一具有特殊栅极外型的鳍式场效晶体管结构的透视图。图4实施例所示的结构与图2实施例所示的结构类似，差别仅在于其突起部106的顶面并未如图2所示般与栅极104a的下半部104c顶面齐高，而是低于该下半部104c顶面一定的高度。
根据前文中所揭露的发明特征，本案也揭露了一种半导体立体结构，其结构包含一基底100、一鳍部102a，位于基底100上，该鳍部102a的长度方向为第一方向D1、以及一栅极104a，位于基底100上且横跨鳍部102a，该栅极104a的长度方向为第二方向D2，其中栅极104a分为位于鳍部102a顶面上的上半部104b以及位于鳍部102a两侧的下半部104c，栅极104a的该下半部104c在邻接鳍部102a的位置处具有往第一方向D1侧向延伸的突起部106。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (14)

1.一种具有特殊栅极外型的鳍式场效晶体管结构，其特征在于，包含：
基底；
鳍部，位于该基底上，该鳍部的长度方向为第一方向；以及
栅极，位于该基底上且横跨该鳍部，该栅极的长度方向为第二方向，其中该栅极分为位于该鳍部的顶面上的上半部以及位于该鳍部的两侧的下半部，该栅极的该下半部在邻接该鳍部的位置处具有往该第一方向侧向延伸的突起部，其中该突起部的顶面与该栅极的该下半部的顶面齐平。
2.如权利要求1所述的具有特殊栅极外型的鳍式场效晶体管结构，其中该鳍部仅位于该栅极一侧，该栅极的该下半部仅在有该鳍部的一侧具有该突起部，没有该鳍部的另一侧不具有该突起部。
3.如权利要求1所述的具有特殊栅极外型的鳍式场效晶体管结构，其中该鳍部具有断开的切槽部位，而该栅极的一侧邻近该切槽部位，该栅极的另一侧不邻近该切槽部位，在所述第一方向上往邻近的该切槽部位突出的该突起部的突起程度大于未往邻近的该切槽部位突出的该突起部的突出程度。
4.如权利要求1所述的具有特殊栅极外型的鳍式场效晶体管结构，其中该栅极的该下半部在该第一方向上的宽度大于该栅极的该上半部在该第一方向上的宽度。
5.如权利要求1所述的具有特殊栅极外型的鳍式场效晶体管结构，其中该栅极的宽度不论在第一方向上或是第二方向上都从该下半部往该上半部渐缩。
6.如权利要求1所述的具有特殊栅极外型的鳍式场效晶体管结构，其中该栅极为虚设栅。
7.如权利要求1所述的具有特殊栅极外型的鳍式场效晶体管结构，其中该栅极的材料为多晶硅。
8.如权利要求1所述的具有特殊栅极外型的鳍式场效晶体管结构，其中该鳍部的材料为硅。
9.一种半导体立体结构，其特征在于，包含：
基底；
鳍部，位于该基底上，该鳍部的长度方向为第一方向；以及
栅极，位于该基底上且横跨该鳍部，该栅极的长度方向为第二方向，其中该栅极分为位于该鳍部的顶面上的上半部以及位于该鳍部的两侧的下半部，该栅极的该下半部在邻接该鳍部的位置处具有往该第一方向侧向延伸的突起部，其中该突起部的顶面与该栅极的该下半部的顶面齐平。
10.如权利要求9所述的半导体立体结构，其中该鳍部仅位于该栅极一侧，该栅极的该下半部仅在有该鳍部的一侧具有该突起部，没有该鳍部的另一侧不具有该突起部。
11.如权利要求9所述的半导体立体结构，其中该鳍部具有断开的切槽部位，而该栅极的一侧邻近该切槽部位，该栅极的另一侧不邻近该切槽部位，在所述第一方向上往邻近的该切槽部位突出的该突起部的突起程度大于未往邻近的该切槽部位突出的该突起部的突出程度。
12.如权利要求9所述的半导体立体结构，其中该栅极的该下半部在该第一方向上的宽度大于该栅极的该上半部在该第一方向上的宽度。
13.如权利要求9所述的半导体立体结构，其中该栅极的宽度不论在第一方向上或是第二方向上都从该下半部往该上半部渐缩。
14.如权利要求9所述的半导体立体结构，其中该栅极为虚设栅。
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