CN111276465B - 高密度自路由金属氧化物金属电容器 - Google Patents

高密度自路由金属氧化物金属电容器 Download PDF

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Publication number
CN111276465B
CN111276465B CN201911223913.9A CN201911223913A CN111276465B CN 111276465 B CN111276465 B CN 111276465B CN 201911223913 A CN201911223913 A CN 201911223913A CN 111276465 B CN111276465 B CN 111276465B
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China
Prior art keywords
fingers
capacitor
base region
electrode
base
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CN201911223913.9A
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Chinese (zh)
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CN111276465A (zh
Inventor
陈宝箴
L·D·费尔南多
M·G·欧哈罗兰
A·W·肖
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Analog Devices Inc
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Analog Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
CN201911223913.9A 2018-12-04 2019-12-04 高密度自路由金属氧化物金属电容器 Active CN111276465B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/209,768 2018-12-04
US16/209,768 US10692967B1 (en) 2018-12-04 2018-12-04 High density self-routing metal-oxide-metal capacitor

Publications (2)

Publication Number Publication Date
CN111276465A CN111276465A (zh) 2020-06-12
CN111276465B true CN111276465B (zh) 2024-01-16

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CN201911223913.9A Active CN111276465B (zh) 2018-12-04 2019-12-04 高密度自路由金属氧化物金属电容器

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US (1) US10692967B1 (https=)
JP (1) JP6861784B2 (https=)
CN (1) CN111276465B (https=)
DE (1) DE102019132881B4 (https=)
TW (1) TWI727532B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114914089A (zh) * 2021-02-08 2022-08-16 日月光半导体制造股份有限公司 电容器结构
CN118678876A (zh) * 2023-03-14 2024-09-20 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US20240404943A1 (en) * 2023-06-02 2024-12-05 Intel Corporation Integrated circuit devices with fishbone capacitor structures
US20250113498A1 (en) * 2023-10-02 2025-04-03 International Business Machines Corporation Metal spacer 3d-mim capacitor

Citations (2)

* Cited by examiner, † Cited by third party
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CN102473710A (zh) * 2009-08-27 2012-05-23 国际商业机器公司 叉指状竖直平行电容器
CN103050549A (zh) * 2011-10-14 2013-04-17 台湾积体电路制造股份有限公司 金属-氧化物-金属电容器结构

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US7102195B2 (en) * 2000-12-20 2006-09-05 Winbond Electronics Corporation Transistor structure for electrostatic discharge protection circuit
US7838919B2 (en) * 2007-03-29 2010-11-23 Panasonic Corporation Capacitor structure
US8021954B2 (en) * 2009-05-22 2011-09-20 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with hierarchical capacitor and method of manufacture thereof
US8476687B2 (en) * 2010-09-22 2013-07-02 Texas Instruments Incorporated Low impedance transmisson line
US8971014B2 (en) 2010-10-18 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Protection structure for metal-oxide-metal capacitor
US8963286B2 (en) 2011-05-09 2015-02-24 Marvell International Ltd. Finger metal oxide metal capacitor structures
US8558346B1 (en) 2012-06-26 2013-10-15 United Microelectronics Corp. Semiconductor structure
US9331013B2 (en) * 2013-03-14 2016-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated capacitor
JP2014232865A (ja) * 2013-04-30 2014-12-11 住友電気工業株式会社 キャパシタ素子およびその製造方法並びにフィルタ
JP6244967B2 (ja) * 2014-02-19 2017-12-13 株式会社ソシオネクスト キャパシタアレイおよびａｄ変換器
KR101585959B1 (ko) 2015-02-10 2016-01-20 전자부품연구원 무선랜 ap의 adc에 적용 가능한 mom 커패시터
JP6555084B2 (ja) * 2015-11-02 2019-08-07 富士通株式会社 容量素子及び容量素子の製造方法
US10147783B2 (en) * 2017-03-20 2018-12-04 Globalfoundries Inc. On-chip capacitors with floating islands
CN107633128A (zh) 2017-09-15 2018-01-26 北京华大九天软件有限公司 Mom电容、mom电容阵列及mom电容阵列的布局和走线方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473710A (zh) * 2009-08-27 2012-05-23 国际商业机器公司 叉指状竖直平行电容器
CN103050549A (zh) * 2011-10-14 2013-04-17 台湾积体电路制造股份有限公司 金属-氧化物-金属电容器结构

Also Published As

Publication number Publication date
JP6861784B2 (ja) 2021-04-21
TW202038430A (zh) 2020-10-16
DE102019132881B4 (de) 2024-06-13
DE102019132881A1 (de) 2020-06-04
US10692967B1 (en) 2020-06-23
CN111276465A (zh) 2020-06-12
JP2020092266A (ja) 2020-06-11
TWI727532B (zh) 2021-05-11
US20200176555A1 (en) 2020-06-04

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