TWI727532B - 用於積體電路之自選路徑電容器、於積體電路內形成自選路徑電容器之方法、形成於積體電路內之電容 - Google Patents

用於積體電路之自選路徑電容器、於積體電路內形成自選路徑電容器之方法、形成於積體電路內之電容 Download PDF

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TWI727532B
TWI727532B TW108144079A TW108144079A TWI727532B TW I727532 B TWI727532 B TW I727532B TW 108144079 A TW108144079 A TW 108144079A TW 108144079 A TW108144079 A TW 108144079A TW I727532 B TWI727532 B TW I727532B
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Taiwan
Prior art keywords
capacitor
fingers
base area
finger
electrode
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TW108144079A
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English (en)
Chinese (zh)
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TW202038430A (zh
Inventor
陳寶箴
拉林達 Ｄ 費南多
米卡 葛雷塔 歐哈洛蘭
安德魯 韋恩 蕭
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美商美國亞德諾半導體公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
TW108144079A 2018-12-04 2019-12-03 用於積體電路之自選路徑電容器、於積體電路內形成自選路徑電容器之方法、形成於積體電路內之電容 TWI727532B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/209,768 2018-12-04
US16/209,768 US10692967B1 (en) 2018-12-04 2018-12-04 High density self-routing metal-oxide-metal capacitor

Publications (2)

Publication Number Publication Date
TW202038430A TW202038430A (zh) 2020-10-16
TWI727532B true TWI727532B (zh) 2021-05-11

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TW108144079A TWI727532B (zh) 2018-12-04 2019-12-03 用於積體電路之自選路徑電容器、於積體電路內形成自選路徑電容器之方法、形成於積體電路內之電容

Country Status (5)

Country Link
US (1) US10692967B1 (https=)
JP (1) JP6861784B2 (https=)
CN (1) CN111276465B (https=)
DE (1) DE102019132881B4 (https=)
TW (1) TWI727532B (https=)

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CN114914089A (zh) * 2021-02-08 2022-08-16 日月光半导体制造股份有限公司 电容器结构
CN118678876A (zh) * 2023-03-14 2024-09-20 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US20240404943A1 (en) * 2023-06-02 2024-12-05 Intel Corporation Integrated circuit devices with fishbone capacitor structures
US20250113498A1 (en) * 2023-10-02 2025-04-03 International Business Machines Corporation Metal spacer 3d-mim capacitor

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CN1293629C (zh) * 2000-12-20 2007-01-03 华邦电子股份有限公司 静电放电保护器件及其制造方法
TW201044504A (en) * 2009-05-22 2010-12-16 Globalfoundries Sg Pte Ltd Integrated circuit system with hierarchical capacitor and method of manufacture thereof
US9041155B2 (en) * 2012-06-26 2015-05-26 United Microelectronics Corp. Semiconductor structure
US9472612B2 (en) * 2013-03-14 2016-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated capacitor
TW201836160A (zh) * 2017-03-20 2018-10-01 美商格芯（美國）集成電路科技有限公司 具有浮島的片上電容器

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US7838919B2 (en) * 2007-03-29 2010-11-23 Panasonic Corporation Capacitor structure
US8378450B2 (en) * 2009-08-27 2013-02-19 International Business Machines Corporation Interdigitated vertical parallel capacitor
US8476687B2 (en) * 2010-09-22 2013-07-02 Texas Instruments Incorporated Low impedance transmisson line
US8971014B2 (en) 2010-10-18 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Protection structure for metal-oxide-metal capacitor
US8963286B2 (en) 2011-05-09 2015-02-24 Marvell International Ltd. Finger metal oxide metal capacitor structures
US8558350B2 (en) * 2011-10-14 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-oxide-metal capacitor structure
JP2014232865A (ja) * 2013-04-30 2014-12-11 住友電気工業株式会社 キャパシタ素子およびその製造方法並びにフィルタ
JP6244967B2 (ja) * 2014-02-19 2017-12-13 株式会社ソシオネクスト キャパシタアレイおよびａｄ変換器
KR101585959B1 (ko) 2015-02-10 2016-01-20 전자부품연구원 무선랜 ap의 adc에 적용 가능한 mom 커패시터
JP6555084B2 (ja) * 2015-11-02 2019-08-07 富士通株式会社 容量素子及び容量素子の製造方法
CN107633128A (zh) 2017-09-15 2018-01-26 北京华大九天软件有限公司 Mom电容、mom电容阵列及mom电容阵列的布局和走线方法

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Publication number Priority date Publication date Assignee Title
CN1293629C (zh) * 2000-12-20 2007-01-03 华邦电子股份有限公司 静电放电保护器件及其制造方法
TW201044504A (en) * 2009-05-22 2010-12-16 Globalfoundries Sg Pte Ltd Integrated circuit system with hierarchical capacitor and method of manufacture thereof
US9041155B2 (en) * 2012-06-26 2015-05-26 United Microelectronics Corp. Semiconductor structure
US9472612B2 (en) * 2013-03-14 2016-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated capacitor
TW201836160A (zh) * 2017-03-20 2018-10-01 美商格芯（美國）集成電路科技有限公司 具有浮島的片上電容器

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Publication number Publication date
JP6861784B2 (ja) 2021-04-21
TW202038430A (zh) 2020-10-16
CN111276465B (zh) 2024-01-16
DE102019132881B4 (de) 2024-06-13
DE102019132881A1 (de) 2020-06-04
US10692967B1 (en) 2020-06-23
CN111276465A (zh) 2020-06-12
JP2020092266A (ja) 2020-06-11
US20200176555A1 (en) 2020-06-04

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