CN111247485B - 曝光装置和用于制造物品的方法 - Google Patents

曝光装置和用于制造物品的方法 Download PDF

Info

Publication number
CN111247485B
CN111247485B CN201880068453.4A CN201880068453A CN111247485B CN 111247485 B CN111247485 B CN 111247485B CN 201880068453 A CN201880068453 A CN 201880068453A CN 111247485 B CN111247485 B CN 111247485B
Authority
CN
China
Prior art keywords
light
substrate
receiving element
exposure
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880068453.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN111247485A (zh
Inventor
河野道生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority claimed from PCT/JP2018/038417 external-priority patent/WO2019082727A1/ja
Publication of CN111247485A publication Critical patent/CN111247485A/zh
Application granted granted Critical
Publication of CN111247485B publication Critical patent/CN111247485B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/30—Systems for automatic generation of focusing signals using parallactic triangle with a base line
    • G02B7/32—Systems for automatic generation of focusing signals using parallactic triangle with a base line using active means, e.g. light emitter
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/40—Systems for automatic generation of focusing signals using time delay of the reflected waves, e.g. of ultrasonic waves
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
CN201880068453.4A 2017-10-24 2018-10-16 曝光装置和用于制造物品的方法 Active CN111247485B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017-205645 2017-10-24
JP2017205645 2017-10-24
JP2018146250A JP2019079029A (ja) 2017-10-24 2018-08-02 露光装置および物品の製造方法
JP2018-146250 2018-08-02
PCT/JP2018/038417 WO2019082727A1 (ja) 2017-10-24 2018-10-16 露光装置および物品の製造方法

Publications (2)

Publication Number Publication Date
CN111247485A CN111247485A (zh) 2020-06-05
CN111247485B true CN111247485B (zh) 2022-10-11

Family

ID=66628843

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880068453.4A Active CN111247485B (zh) 2017-10-24 2018-10-16 曝光装置和用于制造物品的方法

Country Status (4)

Country Link
US (1) US11099488B2 (enExample)
JP (1) JP2019079029A (enExample)
KR (1) KR102433491B1 (enExample)
CN (1) CN111247485B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7566590B2 (ja) * 2020-11-05 2024-10-15 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5117254A (en) * 1988-05-13 1992-05-26 Canon Kabushiki Kaisha Projection exposure apparatus
JPH05119468A (ja) 1991-10-29 1993-05-18 Nikon Corp マスク検査装置
JPH05297262A (ja) 1992-04-23 1993-11-12 Toshiba Corp オートフォーカス装置
US5602399A (en) * 1993-06-23 1997-02-11 Nikon Corporation Surface position detecting apparatus and method
JPH09270382A (ja) * 1996-03-29 1997-10-14 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
US5969820A (en) * 1996-06-13 1999-10-19 Canon Kabushiki Kaisha Surface position detecting system and exposure apparatus using the same
JPH104053A (ja) * 1996-06-13 1998-01-06 Canon Inc 面位置検出装置及びそれを用いたデバイスの製造方法
JPH1027743A (ja) * 1996-07-11 1998-01-27 Canon Inc 投影露光装置、デバイス製造方法及び収差補正光学系
JPH10253327A (ja) 1997-03-14 1998-09-25 Komatsu Ltd ピンホール及びこれを用いた共焦点光学装置とホログラムの露光装置及び露光方法
JP2000173112A (ja) * 1998-12-04 2000-06-23 Nikon Corp 螺旋パターンの露光方法
JP4585697B2 (ja) 2001-01-26 2010-11-24 キヤノン株式会社 露光装置及び光源の位置調整方法
JP4279053B2 (ja) 2002-06-07 2009-06-17 富士フイルム株式会社 露光ヘッド及び露光装置
JP4312535B2 (ja) * 2003-08-06 2009-08-12 シャープ株式会社 パターン露光装置
TWI396225B (zh) * 2004-07-23 2013-05-11 尼康股份有限公司 成像面測量方法、曝光方法、元件製造方法以及曝光裝置
JP2006060152A (ja) * 2004-08-24 2006-03-02 Nikon Corp 光学特性測定装置、ステージ装置及び露光装置
JP2007286243A (ja) * 2006-04-14 2007-11-01 Sumitomo Heavy Ind Ltd 露光装置
JP2007294550A (ja) * 2006-04-21 2007-11-08 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
US7869022B2 (en) 2007-07-18 2011-01-11 Asml Netherlands B.V. Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system
JP2009164356A (ja) * 2008-01-07 2009-07-23 Canon Inc 走査露光装置およびデバイス製造方法
WO2010005491A1 (en) 2008-06-30 2010-01-14 Corning Incorporated Telecentricity corrector for microlithographic projection system
JP5280305B2 (ja) 2009-06-16 2013-09-04 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5328512B2 (ja) * 2009-06-24 2013-10-30 富士フイルム株式会社 露光装置
WO2011102109A1 (ja) 2010-02-20 2011-08-25 株式会社ニコン 光源最適化方法、露光方法、デバイス製造方法、プログラム、露光装置、リソグラフィシステム、及び光源評価方法、並びに光源変調方法
KR101457460B1 (ko) * 2010-02-23 2014-11-03 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
WO2012115002A1 (ja) * 2011-02-22 2012-08-30 株式会社ニコン 保持装置、露光装置、及びデバイスの製造方法
JP6261207B2 (ja) * 2013-07-02 2018-01-17 キヤノン株式会社 露光装置、露光方法、それらを用いたデバイスの製造方法
JP6590638B2 (ja) * 2015-10-29 2019-10-16 株式会社オーク製作所 露光装置用露光ヘッドおよび露光装置用投影光学系
TWI782698B (zh) 2016-03-30 2022-11-01 日商尼康股份有限公司 圖案描繪裝置、圖案描繪方法、以及元件製造方法

Also Published As

Publication number Publication date
JP2019079029A (ja) 2019-05-23
KR20200074162A (ko) 2020-06-24
US20200249583A1 (en) 2020-08-06
KR102433491B1 (ko) 2022-08-18
US11099488B2 (en) 2021-08-24
CN111247485A (zh) 2020-06-05

Similar Documents

Publication Publication Date Title
KR100875008B1 (ko) 노광장치 및 디바이스 제조방법
KR101444981B1 (ko) 노광 장치, 노광 방법 및 디바이스 제조 방법
US5969820A (en) Surface position detecting system and exposure apparatus using the same
KR100485314B1 (ko) 투영노광장치와 이것을 사용한 디바이스제조방법
US5753926A (en) Scan type exposure apparatus and method having a reference plate with marks for image detection
KR102756371B1 (ko) 노광 장치 및 물품의 제조 방법
US9746789B2 (en) Exposure apparatus, and method of manufacturing article
JP5137879B2 (ja) 露光装置及びデバイス製造方法
US10921717B2 (en) Exposure apparatus and article manufacturing method
JPH0737774A (ja) 走査型露光装置
US10488764B2 (en) Lithography apparatus, lithography method, and method of manufacturing article
US8094289B2 (en) Scanning exposure apparatus and device manufacturing method
US11099488B2 (en) Exposure apparatus and article manufacturing method
JP6436856B2 (ja) 露光装置、露光方法、および物品の製造方法
JPH104055A (ja) 自動焦点合わせ装置及びそれを用いたデバイスの製造方法
JP2010114265A (ja) 走査露光装置およびその制御方法、ならびにデバイス製造方法
WO2019082727A1 (ja) 露光装置および物品の製造方法
US20260118775A1 (en) Exposure apparatus, exposure method, and article manufacturing method
WO2019082726A1 (ja) 露光装置および物品の製造方法
JP2008124308A (ja) 露光方法及び露光装置、それを用いたデバイス製造方法
JP6053316B2 (ja) リソグラフィー装置、および、物品製造方法
JPH0684747A (ja) 投影露光装置
JP2021056416A (ja) 露光装置、露光方法、および物品の製造方法
JPH0875415A (ja) アライメント装置
JPH05251307A (ja) 縮小投影露光装置の焦点検出機構

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant