CN111247485B - 曝光装置和用于制造物品的方法 - Google Patents

曝光装置和用于制造物品的方法 Download PDF

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Publication number
CN111247485B
CN111247485B CN201880068453.4A CN201880068453A CN111247485B CN 111247485 B CN111247485 B CN 111247485B CN 201880068453 A CN201880068453 A CN 201880068453A CN 111247485 B CN111247485 B CN 111247485B
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CN
China
Prior art keywords
light
substrate
receiving element
exposure
amount
Prior art date
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Application number
CN201880068453.4A
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English (en)
Chinese (zh)
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CN111247485A (zh
Inventor
河野道生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority claimed from PCT/JP2018/038417 external-priority patent/WO2019082727A1/ja
Publication of CN111247485A publication Critical patent/CN111247485A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/30—Systems for automatic generation of focusing signals using parallactic triangle with a base line
    • G02B7/32—Systems for automatic generation of focusing signals using parallactic triangle with a base line using active means, e.g. light emitter
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/40—Systems for automatic generation of focusing signals using time delay of the reflected waves, e.g. of ultrasonic waves
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
CN201880068453.4A 2017-10-24 2018-10-16 曝光装置和用于制造物品的方法 Active CN111247485B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017-205645 2017-10-24
JP2017205645 2017-10-24
JP2018-146250 2018-08-02
JP2018146250A JP2019079029A (ja) 2017-10-24 2018-08-02 露光装置および物品の製造方法
PCT/JP2018/038417 WO2019082727A1 (ja) 2017-10-24 2018-10-16 露光装置および物品の製造方法

Publications (2)

Publication Number Publication Date
CN111247485A CN111247485A (zh) 2020-06-05
CN111247485B true CN111247485B (zh) 2022-10-11

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Application Number Title Priority Date Filing Date
CN201880068453.4A Active CN111247485B (zh) 2017-10-24 2018-10-16 曝光装置和用于制造物品的方法

Country Status (4)

Country Link
US (1) US11099488B2 (enExample)
JP (1) JP2019079029A (enExample)
KR (1) KR102433491B1 (enExample)
CN (1) CN111247485B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7566590B2 (ja) * 2020-11-05 2024-10-15 キヤノン株式会社 露光装置、露光方法、及び物品の製造方法

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US5117254A (en) * 1988-05-13 1992-05-26 Canon Kabushiki Kaisha Projection exposure apparatus
JPH05119468A (ja) 1991-10-29 1993-05-18 Nikon Corp マスク検査装置
JPH05297262A (ja) 1992-04-23 1993-11-12 Toshiba Corp オートフォーカス装置
US5602399A (en) * 1993-06-23 1997-02-11 Nikon Corporation Surface position detecting apparatus and method
JPH09270382A (ja) * 1996-03-29 1997-10-14 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
JPH104053A (ja) * 1996-06-13 1998-01-06 Canon Inc 面位置検出装置及びそれを用いたデバイスの製造方法
US5969820A (en) * 1996-06-13 1999-10-19 Canon Kabushiki Kaisha Surface position detecting system and exposure apparatus using the same
JPH1027743A (ja) * 1996-07-11 1998-01-27 Canon Inc 投影露光装置、デバイス製造方法及び収差補正光学系
JPH10253327A (ja) 1997-03-14 1998-09-25 Komatsu Ltd ピンホール及びこれを用いた共焦点光学装置とホログラムの露光装置及び露光方法
JP2000173112A (ja) * 1998-12-04 2000-06-23 Nikon Corp 螺旋パターンの露光方法
JP4585697B2 (ja) 2001-01-26 2010-11-24 キヤノン株式会社 露光装置及び光源の位置調整方法
JP4279053B2 (ja) 2002-06-07 2009-06-17 富士フイルム株式会社 露光ヘッド及び露光装置
JP4312535B2 (ja) * 2003-08-06 2009-08-12 シャープ株式会社 パターン露光装置
TWI396225B (zh) * 2004-07-23 2013-05-11 尼康股份有限公司 成像面測量方法、曝光方法、元件製造方法以及曝光裝置
JP2006060152A (ja) * 2004-08-24 2006-03-02 Nikon Corp 光学特性測定装置、ステージ装置及び露光装置
JP2007286243A (ja) * 2006-04-14 2007-11-01 Sumitomo Heavy Ind Ltd 露光装置
JP2007294550A (ja) * 2006-04-21 2007-11-08 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
US7869022B2 (en) 2007-07-18 2011-01-11 Asml Netherlands B.V. Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system
JP2009164356A (ja) * 2008-01-07 2009-07-23 Canon Inc 走査露光装置およびデバイス製造方法
WO2010005491A1 (en) 2008-06-30 2010-01-14 Corning Incorporated Telecentricity corrector for microlithographic projection system
JP5280305B2 (ja) 2009-06-16 2013-09-04 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5328512B2 (ja) * 2009-06-24 2013-10-30 富士フイルム株式会社 露光装置
KR20120116329A (ko) 2010-02-20 2012-10-22 가부시키가이샤 니콘 광원 최적화 방법, 노광 방법, 디바이스 제조 방법, 프로그램, 노광 장치, 리소그래피 시스템, 광원 평가 방법 및 광원 변조 방법
NL2006254A (en) * 2010-02-23 2011-08-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JPWO2012115002A1 (ja) * 2011-02-22 2014-07-07 株式会社ニコン 保持装置、露光装置、及びデバイスの製造方法
JP6261207B2 (ja) * 2013-07-02 2018-01-17 キヤノン株式会社 露光装置、露光方法、それらを用いたデバイスの製造方法
JP6590638B2 (ja) * 2015-10-29 2019-10-16 株式会社オーク製作所 露光装置用露光ヘッドおよび露光装置用投影光学系
CN108885408B (zh) 2016-03-30 2021-02-05 株式会社尼康 图案描绘装置

Also Published As

Publication number Publication date
KR102433491B1 (ko) 2022-08-18
US20200249583A1 (en) 2020-08-06
US11099488B2 (en) 2021-08-24
KR20200074162A (ko) 2020-06-24
JP2019079029A (ja) 2019-05-23
CN111247485A (zh) 2020-06-05

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