CN111210865B - 一种低电压sram时间参数的片上测量电路及测量方法 - Google Patents
一种低电压sram时间参数的片上测量电路及测量方法 Download PDFInfo
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- CN111210865B CN111210865B CN202010311269.7A CN202010311269A CN111210865B CN 111210865 B CN111210865 B CN 111210865B CN 202010311269 A CN202010311269 A CN 202010311269A CN 111210865 B CN111210865 B CN 111210865B
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000005259 measurement Methods 0.000 claims abstract description 77
- 238000012360 testing method Methods 0.000 claims abstract description 44
- 239000013598 vector Substances 0.000 claims abstract description 19
- 238000005070 sampling Methods 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 5
- 230000001934 delay Effects 0.000 claims description 5
- 101100328957 Caenorhabditis elegans clk-1 gene Proteins 0.000 claims description 3
- 101100113692 Caenorhabditis elegans clk-2 gene Proteins 0.000 claims description 3
- 238000013461 design Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000003111 delayed effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011557 critical solution Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/36—Data generation devices, e.g. data inverters
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010311269.7A CN111210865B (zh) | 2020-04-20 | 2020-04-20 | 一种低电压sram时间参数的片上测量电路及测量方法 |
| PCT/CN2021/076791 WO2021212984A1 (fr) | 2020-04-20 | 2021-02-19 | Circuit de mesure sur puce et procédé de mesure destiné à des paramètres de temps de mémoire vive statique (sram) basse tension |
| DE202021102005.9U DE202021102005U1 (de) | 2020-04-20 | 2021-04-14 | On-Chip-Messkreis für Zeitparameter von Niederspannungs-SRAM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010311269.7A CN111210865B (zh) | 2020-04-20 | 2020-04-20 | 一种低电压sram时间参数的片上测量电路及测量方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111210865A CN111210865A (zh) | 2020-05-29 |
| CN111210865B true CN111210865B (zh) | 2020-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010311269.7A Active CN111210865B (zh) | 2020-04-20 | 2020-04-20 | 一种低电压sram时间参数的片上测量电路及测量方法 |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN111210865B (fr) |
| DE (1) | DE202021102005U1 (fr) |
| WO (1) | WO2021212984A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111210865B (zh) * | 2020-04-20 | 2020-09-01 | 南京邮电大学 | 一种低电压sram时间参数的片上测量电路及测量方法 |
| CN111752794B (zh) * | 2020-06-04 | 2022-08-12 | Oppo广东移动通信有限公司 | 供电信息的采集方法、系统以及芯片 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001208804A (ja) * | 2000-01-25 | 2001-08-03 | Hitachi Ltd | 半導体集積回路装置 |
| JP2001266595A (ja) * | 2000-03-24 | 2001-09-28 | Nec Microsystems Ltd | 半導体集積回路装置 |
| US6424583B1 (en) * | 2000-11-30 | 2002-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd | System and measuring access time of embedded memories |
| JP2010040092A (ja) * | 2008-08-04 | 2010-02-18 | Nec Electronics Corp | 半導体集積回路 |
| CN103886913B (zh) * | 2014-03-31 | 2016-09-14 | 西安紫光国芯半导体有限公司 | Sram读取时间自测试电路及测试方法 |
| KR102088221B1 (ko) * | 2016-11-23 | 2020-03-12 | 주식회사 디비하이텍 | 메모리 접근 시간 측정 시스템 |
| CN109192239A (zh) * | 2018-07-25 | 2019-01-11 | 上海交通大学 | Sram存储器的片上测试电路和测试方法 |
| CN111210865B (zh) * | 2020-04-20 | 2020-09-01 | 南京邮电大学 | 一种低电压sram时间参数的片上测量电路及测量方法 |
-
2020
- 2020-04-20 CN CN202010311269.7A patent/CN111210865B/zh active Active
-
2021
- 2021-02-19 WO PCT/CN2021/076791 patent/WO2021212984A1/fr active Application Filing
- 2021-04-14 DE DE202021102005.9U patent/DE202021102005U1/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111210865A (zh) | 2020-05-29 |
| WO2021212984A1 (fr) | 2021-10-28 |
| DE202021102005U1 (de) | 2021-04-21 |
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Application publication date: 20200529 Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS NANTONG INSTITUTE Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2020980006914 Denomination of invention: A kind of on chip measuring circuit and method of low voltage SRAM time parameter Granted publication date: 20200901 License type: Common License Record date: 20201021 |
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Application publication date: 20200529 Assignee: Nanjing Low Power Chip Technology Research Institute Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2020980007909 Denomination of invention: A kind of on chip measuring circuit and method of low voltage SRAM time parameter Granted publication date: 20200901 License type: Common License Record date: 20201113 |
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Application publication date: 20200529 Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS NANTONG INSTITUTE Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2021980011617 Denomination of invention: An on-chip measuring circuit and method for time parameters of low voltage SRAM Granted publication date: 20200901 License type: Common License Record date: 20211029 |
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Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS NANTONG INSTITUTE Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2021980011617 Date of cancellation: 20230904 |
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