CN111205086A - 一种cnptc高磁发热技术 - Google Patents

一种cnptc高磁发热技术 Download PDF

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CN111205086A
CN111205086A CN202010207202.9A CN202010207202A CN111205086A CN 111205086 A CN111205086 A CN 111205086A CN 202010207202 A CN202010207202 A CN 202010207202A CN 111205086 A CN111205086 A CN 111205086A
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姚树伟
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Liaoning Sobod Energy Saving Technology Development Co ltd
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Abstract

本发明属于电发热元件技术领域，具体涉及一种CNPTC高磁发热技术，包括铁氧体和正温度系数半导体化合物，铁氧体和正温度系数半导体化合物的结合体为CNPTC组合物，CNPTC组合物为钛酸钡系小型化的热敏电阻元件，CNPTC组合物主成分为BaTiO3。本发明CNPTC组合物采用一般陶瓷工艺成形、高温烧结而使钛酸铂等及其固溶体半导化，从而得到正特性的热敏电阻材料，CNPTC电阻率远大于一般半导体性材料，具有涡流损失小的优点，同时CNPTC组合物形成的磁性元器件热转化率高、热传递速度快、发热均匀性好，散热性好并且散热均匀，发热性能稳定性好，耗能小节约能源，使用寿命长。

Description

一种CNPTC高磁发热技术
技术领域
本发明属于电热交换技术领域，涉及电发热元件的材料，具体涉及一种CNPTC高磁发热技术。
背景技术
如今，电发热元件一般采用陶瓷PTC材料制成，陶瓷PTC是由钛酸钡(或锶、铅)为主成分，添加少量稀土(Y、Nb、Bi、Sb)、受主(Mn、Fe)元素，以及玻璃(氧化硅、氧化铝)等添加剂，经过烧结而成的半导体陶瓷；或者利用丙烯酰胺、亚甲基双丙烯酰胺等有机单体交联聚合形成凝胶来成型陶瓷，这种方法被称为凝胶注模成型(Gelcasting)。现有这种发热陶瓷材料稳定性差，发热不均匀，涡流损失大，热转换效率低；同时，这种发热陶瓷材料工艺结构不合理，空气暴露部分大，散热均匀性极差，使用寿命较低。
发明内容
本发明提供一种CNPTC高磁发热技术，目的是提供一种换热性能好、使用寿命长的节能加热材料。
为实现本发明的目的，本发明提供一种CNPTC高磁发热技术，其特征在于，包括铁氧体和正温度系数半导体化合物，铁氧体和正温度系数半导体化合物的结合体为CNPTC组合物，CNPTC组合物为钛酸钡系小型化的热敏电阻元件，CNPTC组合物用于电发热，CNPTC组合物的成分化学组成计算式为[(Bi·A)<Sub>x</Sub>(Ba<Sub>1-y</Sub>R<Sub>y</Sub>)<Sub>1-x</Sub>](Ti<Sub>1-z</Sub>M<Sub>z</Sub>)<Sub>a</Sub>O<Sub>3</Sub>。
优选的，所述CNPTC组合物中A是Na、Li和K中的至少一种表示，R是稀土元素(包括Y)中的至少一种表示，M是Nb、Ta和Sb中的至少一种表示。
优选的，所述CNPTC组合物中a满足0.90≤a≤1.10。
优选的，所述CNPTC组合物中x满足0<x≤0.30。
优选的，所述CNPTC组合物中y满足0≤y≤0.050。
优选的，所述CNPTC组合物中z满足0≤z≤0.010。
优选的，所述CNPTC组合物内部存在的孔隙之间的间隔的平均值的孔隙间平均距离为1.0μm以上和8.0μm以下。
优选的，所述CNPTC组合物主成分为BaTiO3。
本发明的有益效果是：本发明CNPTC组合物采用一般陶瓷工艺成形、高温烧结而使钛酸铂等及其固溶体半导化，从而得到正特性的热敏电阻材料，CNPTC电阻率远大于一般半导体性材料，具有涡流损失小的优点，同时CNPTC组合物形成的磁性元器件热转化率高、热传递速度快、发热均匀性好，散热性好并且散热均匀，发热性能稳定性好，耗能小节约能源。CNPTC组合物发热元件工艺结构合理，与空气暴露部分小，提高了热转换效率，长期应用下功率稳定性好，使用寿命长。
附图说明
图1是本发明的分子结构排列的示意图；
图2是本发明的A-A向的局部示意图。
具体实施方式
以下，将结合附图对本发明作进一步说明:
结合图1所示，本发明所公开的一种CNPTC高磁发热技术，其特征在于，包括铁氧体和正温度系数半导体化合物，铁氧体和正温度系数半导体化合物的结合体为CNPTC组合物，CNPTC组合物为钛酸钡系小型化的热敏电阻元件，CNPTC组合物用于电发热，CNPTC组合物的成分化学组成计算式为[(Bi·A)<Sub>x</Sub>(Ba<Sub>1-y</Sub>R<Sub>y</Sub>)<Sub>1-x</Sub>](Ti<Sub>1-z</Sub>M<Sub>z</Sub>)<Sub>a</Sub>O<Sub>3</Sub>。CNPTC组合物中A是Na、Li和K中的至少一种表示，R是稀土元素(包括Y)中的至少一种表示，M是Nb、Ta和Sb中的至少一种表示。CNPTC组合物中a满足0.90≤a≤1.10。CNPTC组合物中x满足0<x≤0.30。CNPTC组合物中y满足0≤y≤0.050。CNPTC组合物中z满足0≤z≤0.010。CNPTC组合物内部存在的孔隙之间的间隔的平均值的孔隙间平均距离为1.0μm以上和8.0μm以下。CNPTC组合物是基于磁性陶瓷主要是指铁氧体和正温度系数半导体化合物(PTC)的结合体，铁氧体是以氧化铁和其他铁族或稀土族氧化物为主要成分的复合氧化物。铁氧体同时还添加增大其正电阻温度系数的Mn、Fe、Cu、Cr的氧化物和起其他作用的添加物，采用一般陶瓷工艺成形、高温烧结而使钛酸铂等及其固溶体半导化，从而得到正特性的热敏电阻材料，在材料配方上融入了磁性材料，在生产工艺上避免了机械挤压固定方式，减少了发热片暴露在空气的面积，提高了热转换效率，延长了使用寿命，CNPTC组合物提高耐涌流特性，CNPTC组合物电阻率远大于一般半导体性材料，具有涡流损失小的优点，同时磁性元器件还具有转化率高、传递速度快、节约能源等优势。实际应用中也可以采用CNPTC为发热元件，通过合金铝制成管道交换器将发热量与介质交换的装置。
CNPTC组合物也可以为钛酸钡系半导体瓷器组合物，CNPTC组合物主成分为BaTiO3，主成分BaTiO3中一部分Ba被1～25摩尔％的Ca、1～30摩尔％的Sr和1～50摩尔％的Pb取代；对应于100摩尔％主成分，添加了0.2～1.0摩尔％半导体化试剂；作为添加剂的锰换算成Mn的添加量为0.01～0.10摩尔％，硅石换算成SiO2的添加量为0.5～5摩尔％，镁换算成Mg的添加量为0.0028～0.093摩尔％。
本发明CNPTC组合物采用一般陶瓷工艺成形、高温烧结而使钛酸铂等及其固溶体半导化，从而得到正特性的热敏电阻材料，CNPTC电阻率远大于一般半导体性材料，具有涡流损失小的优点，同时CNPTC组合物形成的磁性元器件热转化率高、热传递速度快、发热均匀性好，散热性好并且散热均匀，发热性能稳定性好，耗能小节约能源。CNPTC组合物发热元件工艺结构合理，与空气暴露部分小，提高了热转换效率，长期应用下功率稳定性好，使用寿命长。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内，不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (8)

1.一种CNPTC高磁发热技术，其特征在于：包括铁氧体和正温度系数半导体化合物，铁氧体和正温度系数半导体化合物的结合体为CNPTC组合物，CNPTC组合物为钛酸钡系小型化的热敏电阻元件，CNPTC组合物的组式为[(Bi·A)<Sub>x</Sub>(Ba<Sub>1-y</Sub>R<Sub>y</Sub>)<Sub>1-x</Sub>](Ti<Sub>1-z</Sub>M<Sub>z</Sub>)<Sub>a</Sub>O<Sub>3</Sub>。
2.根据权利要求1所述的一种CNPTC高磁发热技术，其特征在于：所述CNPTC组合物中A是Na、Li和K中的至少一种表示，R是稀土元素(包括Y)中的至少一种表示，M是Nb、Ta和Sb中的至少一种表示。
3.根据权利要求1所述的一种CNPTC高磁发热技术，其特征在于：所述CNPTC组合物中a满足0.90≤a≤1.10。
4.根据权利要求1所述的一种CNPTC高磁发热技术，其特征在于：所述CNPTC组合物中x满足0<x≤0.30。
5.根据权利要求1所述的一种CNPTC高磁发热技术，其特征在于：所述CNPTC组合物中y满足0≤y≤0.050。
6.根据权利要求1所述的一种CNPTC高磁发热技术，其特征在于：所述CNPTC组合物中z满足0≤z≤0.010。
7.根据权利要求1所述的一种CNPTC高磁发热技术，其特征在于：所述CNPTC组合物内部存在的孔隙之间的间隔的平均值的孔隙间平均距离为1.0μm以上和8.0μm以下。
8.根据权利要求1所述的一种CNPTC高磁发热技术，其特征在于：所述CNPTC组合物主成分为BaTiO3。
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JPS573201B1 (zh) * 1971-06-22 1982-01-20
US6218928B1 (en) * 1996-09-13 2001-04-17 Tdk Corporation PTC thermistor material
CN1217812A (zh) * 1997-02-25 1999-05-26 Tdk株式会社 氧化物磁性材料、铁氧体颗粒、烧结磁体、粘结磁体、磁记录介质和电机
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