CN111199916A - 层叠体的加工方法 - Google Patents

层叠体的加工方法 Download PDF

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CN111199916A
CN111199916A CN201911098279.0A CN201911098279A CN111199916A CN 111199916 A CN111199916 A CN 111199916A CN 201911098279 A CN201911098279 A CN 201911098279A CN 111199916 A CN111199916 A CN 111199916A
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laminate
wafer
cutting
modified layer
dividing
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中村胜
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Abstract

提供层叠体的加工方法，当将在晶片的正面上借助透明的粘接层而配设有玻璃基板的层叠体分割成各个图像传感器芯片时，不会产生品质的降低。该层叠体的加工方法包含如下的工序：改质层去除工序，一边从层叠体的晶片侧提供混入有水溶性树脂的切削水一边将切削刀具定位于与分割预定线对应的区域而进行切削，将形成于晶片的内部的改质层去除；分割工序，在实施了改质层去除工序之后，对扩展带进行扩展而将层叠体分割成各个图像传感器芯片；以及清洗工序，在维持扩展带的扩展状态的状态下，从晶片的背面提供清洗水而对层叠体进行清洗。

Description

层叠体的加工方法
技术领域
本发明涉及层叠体的加工方法，将在晶片的正面上借助透明的粘接层而配设有玻璃基板的层叠体分割成各个图像传感器芯片。
背景技术
由交叉的多条分割预定线划分而在硅等半导体基板的上表面上形成有多个CMOS、CCD等图像传感器的晶片通过以能够旋转的方式具有切削刀具的切割装置、或具有将激光光线会聚至被加工物而实施加工的聚光器的激光加工装置分割成各个图像传感器芯片，分割得到的图像传感器芯片被用于数码相机、移动电话、显微镜等。
图像传感器由于灰尘、划伤等而导致拍摄功能降低，因此在形成有多个图像传感器的晶片的上表面上配设玻璃等透明体而构成层叠体，由此保护图像传感器而免受划伤等的影响。
例如作为将上述层叠体分割成各个图像传感器芯片的方法，提出了利用切割装置进行分割的方法(参照专利文献1)。另外，作为将该层叠体分割成各个图像传感器芯片的其他方法，提出了如下的方法：将对于层叠体具有透过性的激光光线的聚光点定位于该层叠体的内部而进行照射从而形成改质层，对该层叠体赋予外力而以该改质层为分割起点分割成各个图像传感器芯片(参照专利文献2)。
专利文献1：日本特开2010-103327号公报
专利文献2：日本特开2010-108992号公报
在通过上述专利文献1所记载的技术将层叠体分割的情况下，存在在该晶片侧的图像传感器芯片的外周产生缺损而导致品质降低的问题，另外在通过上述专利文献2所记载的技术将层叠体分割的情况下，存在粉尘从构成该层叠体的晶片的改质层落下而附着在图像传感器芯片上从而导致品质的降低的问题。
发明内容
由此，本发明的目的在于提供层叠体的加工方法，当将在晶片的正面上借助透明的粘接层而配设有玻璃基板的层叠体分割成各个芯片时，不会产生上述的品质的降低。
根据本发明，提供层叠体的加工方法，将在晶片的正面上借助透明的粘接层而配设有玻璃基板的层叠体分割成各个图像传感器芯片，所述晶片由交叉的多条分割预定线划分而在正面上形成有多个图像传感器，其中，该层叠体的加工方法具有如下的工序：切削槽形成工序，从层叠体的玻璃基板侧定位切削刀具，对与分割预定线对应的区域进行切削，在该玻璃基板上形成到达粘接层的切削槽；分割起点形成工序，从晶片的背面侧将对于该晶片具有透过性的波长的激光光线的聚光点定位于该晶片的与该分割预定线对应的区域的内部而照射该激光光线，在该晶片的内部连续地形成改质层，并且形成从该改质层到达该粘接层的裂纹，从而形成分割起点；层叠体支承工序，至少在该切削槽形成工序之后，将该层叠体的玻璃基板侧借助扩展带而支承于具有对该层叠体进行收纳的大小的开口部的框架；改质层去除工序，一边从该层叠体的晶片侧提供混入有水溶性树脂的切削水，一边将切削刀具定位于与该分割预定线对应的区域而进行切削，将形成于该晶片的内部的该改质层去除；分割工序，在实施了该改质层去除工序之后，对该扩展带进行扩展而将该层叠体分割成各个图像传感器芯片；以及清洗工序，在维持该扩展带的该扩展状态的状态下，从该晶片的背面提供清洗水而对该层叠体进行清洗。
优选在该分割工序或清洗工序中，对处于该层叠体与该框架之间的扩展带施加热而使该扩展带收缩，从而维持扩展状态。优选该清洗工序中所使用的混入有水溶性树脂的切削水通过过滤器而去除切削屑，并循环使用。
根据本发明的层叠体的加工方法，能够将去除改质层时所产生的晶片的切削屑以及从改质层产生的粉尘与包含水溶性树脂的切削水一起排出到层叠体的外部，从改质层产生的粉尘不会附着于各个图像传感器芯片(CMOS、CCD)，并且不会在图像传感器芯片的外周产生缺损，因此不会降低图像传感器的品质。
附图说明
图1是示出在本实施方式中作为被加工物的层叠体的结构的立体图。
图2是示出将层叠体保持于切削装置的方式的立体图。
图3是示出切削槽形成工序的实施方式的立体图。
图4的(a)是通过切削槽形成工序而形成有切削槽的层叠体的立体图，图4的(b)是形成有切削槽的层叠体的局部放大剖视图。
图5是示出通过层叠体支承工序而将层叠体借助扩展带T而支承于框架F的方式的立体图。
图6的(a)是示出分割起点形成工序的实施方式的立体图，图6的(b)是示出通过分割起点形成工序而在构成层叠体的晶片的内部形成有分割起点的状态的层叠体的局部放大剖视图。
图7的(a)是示出改质层去除工序的实施方式的立体图，图7的(b)是示出通过改质层去除工序将改质层去除的状态的层叠体的局部放大剖视图。
图8的(a)是实施分割工序的分割装置的剖视图，图8的(b)是通过分割工序进行了分割的层叠体的立体图，图8的(c)是通过分割工序进行了分割的层叠体的局部放大剖视图。
图9是示出清洗工序的实施方式的立体图。
标号说明
10：晶片；12：图像传感器；12’：图像传感器芯片；14：分割预定线；18：玻璃基板；20：层叠体；30、50：切割装置；34、53：切削刀具；40：激光加工装置；42：激光光线照射单元；42a：聚光器；60：切削水提供回路；70：分割装置；76：带扩展单元；80：清洗单元；100：切削槽；110：分割起点；110a：改质层；110b：裂纹；120：切削槽；120’：分割槽；B：粘接层(粘接剂)；F：框架；T：扩展带；W：切削水；WO：清洗水。
具体实施方式
以下，参照附图对本发明实施方式的层叠体的加工方法进行详细说明。
如图1所示，首先例如准备由硅(Si)构成的晶片10以及透明的玻璃基板18，该晶片10由交叉的多条分割预定线14划分而在正面10a上形成有多个图像传感器(CMOS)12。若准备了晶片10和玻璃基板18，则对晶片10的正面10a滴加透明的粘接剂(树脂结合剂)B而粘贴玻璃基板18。这样，借助由上述粘接剂B构成的粘接层B将晶片10和玻璃基板18一体化而形成层叠体20(参照图1的下部)。
(切削槽形成工序)
若如上述那样形成了层叠体20，则实施切削槽形成工序，从层叠体20的玻璃基板18侧形成切削槽。以下，参照图2和图3对切削槽形成工序进行说明。
首先，将玻璃基板18侧朝向上方而将层叠体20载置于切割装置30(仅示出一部分)所具有的保持工作台31的保持面31a上。保持面31a由具有通气性的多孔陶瓷形成，与未图示的吸引单元连接。若将层叠体20载置于保持工作台31，则使该吸引单元进行动作而进行吸引保持。
如图3所示，切割装置30具有主轴单元32。主轴单元32具有：切削刀具34，其固定于主轴33的前端部，在外周具有切刃；以及刀具罩35，其对切削刀具34进行保护。切削刀具34例如是适合玻璃基板18的切削的树脂结合剂磨具，直径设定成50mm，厚度设定成30μm。切削刀具34构成为能够与主轴33一起旋转，例如按照20，000rpm的速度进行旋转。在刀具罩35上，在与切削刀具34相邻的位置配设有切削水提供单元36，切削水提供单元36将切削水朝向切削刀具34对层叠体20的切削位置提供。在通过切削刀具34实施切削时，使用未图示的对准单元进行切削刀具34与保持工作台31所保持的层叠体20的作为加工位置的位置的对位(对准)。该对准单元至少具有未图示的照明单元和拍摄单元，构成为能够从玻璃基板18侧对要从透明的玻璃基板18侧拍摄的晶片10的正面10a的分割预定线14进行拍摄、检测。另外，切割装置30在对准单元中具有对层叠体20的上表面的高度进行检测的高度检测单元。
若实施了该对准单元的对准，则将与主轴33一起高速旋转的切削刀具34定位于保持工作台31所保持的层叠体20的与分割预定线14对应的区域的外周端，使切削刀具34的下端位置下降至将玻璃基板18完全切削且到达层叠体20的粘接层B的高度位置而切入，使层叠体20相对于切削刀具34在箭头X所示的X轴方向(加工进给方向)上移动。此时的加工进给速度例如设定为50mm/秒。由此，如图3所示，对构成层叠体20的玻璃基板18的与分割预定线14对应的区域进行切削而形成切削槽100。并且，一边通过未图示的移动单元使吸引保持着层叠体20的保持工作台31在X轴方向和与X轴方向垂直的方向上适当移动一边通过上述的切削刀具34对层叠体20的第1方向上的所有分割预定线14形成切削槽100。若与层叠体20的第1方向上的所有分割预定线14对应地形成了切削槽100，则使保持工作台31旋转90度，在与上述第1方向垂直的第2方向上，对与分割预定线14对应的区域形成与上述同样的切削槽100。由此，如图4的(a)所示，在与所有分割预定线14对应的区域形成切削槽100。由图4的(b)所示的层叠体20的局部放大剖视图能够理解，该切削槽100是从层叠体20的玻璃基板18侧进行切削而到达粘接层B的槽，并不是将层叠体20完全分割的槽。如以上那样，完成切削槽形成工序。
(层叠体支承工序、分割起点形成工序)
若实施了上述切削槽形成工序，则实施层叠体支承工序和分割起点形成工序。以下，参照图5、图6对层叠体支承工序和分割起点形成工序进行说明。
在实施层叠体支承工序时，如图5所示，准备支承部件，该支承部件是将扩展带T的外周部粘贴在具有对层叠体20进行收纳的大小的开口部的框架F上而得的。若准备了该支承部件，则使晶片10侧朝向上方而将形成有切削槽100的层叠体20的玻璃基板18侧粘贴于扩展带T的正面中央进行支承。扩展带T具有伸缩性，通过糊料剂等赋予粘接性，配设在扩展带T上的层叠体20借助扩展带T而被支承于环状的框架F(参照图5的下部)。
若如上述那样实施了层叠体支承工序，则实施分割起点形成工序。在本实施方式中所实施的分割起点形成工序可以使用图6的(a)所示的激光加工装置40(仅示出一部分)来实施。以下，对通过激光加工装置40实施的分割起点形成工序进行说明。
如图6的(a)所示，激光加工装置40具有激光光线照射单元42。激光光线照射单元42具有包含未图示的激光振荡器的光学系统，具有对从该激光振荡器射出的激光光线LB进行会聚而进行照射的聚光器42a。如图6的(b)所示，激光光线照射单元42能够实施如下的激光加工：将对于晶片10具有透过性的波长的激光光线LB的聚光点定位于晶片10的与分割预定线14对应的区域的内部而进行照射，连续地形成改质层110a。在通过激光光线照射单元42实施分割起点形成工序时，首先将框架F所保持的层叠体20保持于激光加工装置40所具有的未图示的保持工作台。若将层叠体20保持于该保持工作台，则使用未图示的对准单元检测晶片10的背面10b的高度位置，并且进行聚光器42a所照射的激光光线LB的照射位置与晶片10的正面10a侧所形成的分割预定线14的对位(对准)。该对准单元具有未图示的红外线照明单元和红外线拍摄单元，构成为能够从晶片10的背面10b侧拍摄、检测正面10a的分割预定线14。
若实施了该对准单元的对准，则将聚光器42a定位于晶片10的与分割预定线14对应的区域即要开始加工的晶片10的外周端位置的上方，将从聚光器42a照射的激光光线LB的聚光点定位于晶片10的与分割预定线14对应的区域的内部。接着，使激光光线照射单元42进行动作，并且通过未图示的移动单元使层叠体20相对于聚光器42a在箭头X所示的X轴方向(加工进给方向)上移动。由此，由图6的(b)所示的层叠体20的局部放大剖视图能够理解，沿着晶片10的规定的内部位置即与分割预定线14对应的位置连续地形成改质层110a，并且形成从改质层110a到达粘接层B的裂纹110b，从而形成作为分割的起点的分割起点110。另外，在图6的(b)中，X轴方向是与图6的(b)所记载的纸面垂直的方向。
另外，一边通过未图示的移动单元使保持着层叠体20的保持工作台在X轴方向和与X方向垂直的Y轴方向上适当移动，一边通过上述激光光线照射单元42与第1方向上的所有分割预定线14对应地形成分割起点110。若与晶片10的第1方向上的所有分割预定线14对应地形成了分割起点110，则使未图示的保持工作台旋转90度，在与该第1方向垂直的第2方向上，也对晶片10的与分割预定线14对应的区域的内部实施与上述同样的激光加工而形成分割起点110。由此，沿着晶片10的与所有分割预定线14对应的区域形成分割起点110。通过以上，实施了本实施方式的层叠体支承工序和分割起点形成工序。另外，在上述实施方式中，在实施层叠体支承工序之后，实施分割起点形成工序，但在本发明中，未必限于在分割起点形成工序之前实施层叠体支承工序，也可以在实施了分割起点形成工序之后实施层叠体支承工序。即，层叠体支承工序至少在上述切削槽形成工序之后且在实施后述的分割工序之前的任意时刻实施即可。
另外，上述分割起点形成工序中的激光加工条件例如如下设定。
波长 ：1342nm
重复频率 ：60kHz
平均输出 ：1W
加工进给速度 ：600mm/秒
(改质层去除工序)
若如上述那样实施了层叠体支承工序、分割起点形成工序，则实施改质层去除工序。以下，参照图7对改质层去除工序进行说明。
将实施了上述分割起点形成工序的层叠体20搬送至图7所示的切割装置50，使层叠体20的晶片10侧朝向上方而载置并保持于切割装置50所具有的未图示的保持工作台。
如图7所示，切割装置50具有主轴单元51。主轴单元51具有：切削刀具53，其固定于主轴52的前端部，在外周具有切刃；以及刀具罩54，其对切削刀具53进行保护。切削刀具53例如是适合晶片10的切削的电铸磨具，直径设定成50mm，厚度设定成30μm。切削刀具53构成为能够与主轴52一起旋转，例如按照20，000rpm的速度进行旋转。在刀具罩54上，在与切削刀具53相邻的两侧位置配设有切削水提供单元55，切削水提供单元55将从切削水导入口55a导入的切削水W朝向切削刀具53的切削位置提供。切削水W通过切削水提供回路60提供至切削水导入口55a。切削水提供回路60具有：切削水储存容器62，其储存混入有水溶性树脂(例如聚乙烯醇(PVA))的切削水W；压送泵64，其从切削水储存容器62中吸引切削水W并进行压送；过滤器66，其对切削水W进行过滤；以及切削水通路68，其经由过滤器66将切削水W导入至切削水导入口55a。储存于切削水储存容器62的切削水W被压送泵64吸引，经由过滤器66和切削水通路68而导入至切削水导入口55a，从切削水提供单元55提供至切削位置。提供至该切削位置的切削水W成为包含切削屑的切削水W’，通过未图示的回收路而回收至切削水储存容器62。回收至切削水储存容器62的切削水W’通过过滤器66去除切削屑等而成为清洁的切削水W，在该切削水提供回路60中循环重复使用。
在通过切削刀具53实施切削时，使用未图示的对准单元进行切削刀具53与层叠体20的作为加工位置的与分割预定线14对应的区域(即在玻璃基板18侧形成有切削槽100且在晶片10侧形成有包含改质层110a的分割起点110的位置)的对位(对准)。该对准单元至少具有未图示的红外线照明单元和红外线拍摄单元，构成为能够对要从晶片10的背面10b侧拍摄的形成于晶片10的分割起点110进行拍摄、检测。另外，切割装置50在对准单元中具有对层叠体20的上表面即晶片10的背面10b的高度进行检测的高度检测单元，在对准时也检测该层叠体20的高度。
若实施了该对准单元的对准，则将与主轴52一起高速旋转的切削刀具53定位于构成层叠体20的晶片10的与分割起点110对应的外周端部，将切削刀具53的下端的高度位置定位于比在上述分割起点形成工序中形成于晶片10的内部的改质层110a的下端靠下方规定量的高度的位置。并且，使层叠体20相对于切削刀具53在箭头X所示的X轴方向(加工进给方向)上移动。此时的加工进给速度例如设定为50mm/秒。由此，如图7的(a)所示，在构成层叠体20的晶片10的背面10b上，形成将改质层110a去除的切削槽120。如图7的(b)所示，从切削水提供单元55对通过切削刀具53进行切削的切削位置提供混入有水溶性树脂的切削水W，该切削水提供单元55按照夹着切削刀具53的方式配设在两侧。并且，一边通过未图示的移动单元使吸引保持着层叠体20的保持工作台在X轴方向和与X轴方向垂直的Y轴方向上适当移动，一边通过上述切削刀具53对层叠体20的规定方向上的所有分割起点110形成切削槽120。
若对层叠体20的第1方向上的所有分割起点110形成了去除改质层110a的切削槽120，则使层叠体20旋转90度，在与上述第1方向垂直的第2方向上，也与上述同样地对与分割起点110对应的位置形成切削槽120。由图7的(b)所示的层叠体20的局部放大剖视图能够理解，通过形成该切削槽120，将通过分割起点形成工序而形成在晶片10的内部的改质层110a去除。由此，沿着通过上述分割起点形成工序而形成的所有分割起点110形成切削槽120，完成改质层去除工序。在本实施方式的改质层去除工序中，如上述那样对切削位置提供混合有水溶性树脂的切削水W。由此，能够将去除改质层110a时所产生的晶片10的切削屑以及从改质层110a产生的粉尘与包含水溶性树脂的切削水W一起排出到层叠体20的外部。
(分割工序)
若如上述那样将沿着构成层叠体20的晶片10的与分割预定线14对应的区域的内部所形成的改质层110a去除，则实施分割工序，使用图8的(a)所示的分割装置70对层叠体20赋予外力，将形成于层叠体20的晶片10的图像传感器12分割成各个图像传感器芯片12’。
图8的(a)所示的分割装置70具有：框架保持单元72，其对支承层叠体20的环状的框架F进行保持；以及带扩展单元76，其对粘贴于框架保持单元72所保持的框架F的扩展带T进行扩展。框架保持单元72包含：框架保持部件72a，其按照对环状的框架F进行保持的方式形成为环状；以及作为固定单元的多个夹具72b，它们配设在框架保持部件72a的外周。框架保持部件72a的上表面形成为平坦，载置框架F。并且，载置于框架保持部件72a上的框架F通过夹具72b固定在框架保持部件72a上。这样构成的框架保持单元72通过带扩展单元76支承为能够在上下方向上进退。
在环状的框架保持部件72a的内侧配设有固定于未图示的基台的扩展鼓78。该扩展鼓78设定成比框架F的内径小且比安装于框架F的扩展带T所支承的层叠体20的外径大。本实施方式中的带扩展单元76在扩展鼓78的周围配置有多个，为了能够使框架保持部件72a在上下方向上进退而具有上端与框架保持部件72a的下表面连结的活塞杆76a以及使活塞杆76a在上下方向上进退的气缸76b。这样包含多个活塞杆76a和气缸76b的带扩展单元76能够选择性地移动至图8的(a)中实线所示的框架保持部件72a的上表面和扩展鼓78的上端为大致相同高度的基准位置以及双点划线所示的框架保持部件72a的上表面比扩展鼓的上端靠下方规定量的扩展位置。
本实施方式中的分割装置70大致如以上那样构成，对使用该分割装置70实施的分割工序进行更具体的说明。
若如上述那样将借助扩展带T而支承层叠体20的框架F载置于框架保持部件72a上并通过夹具72b进行固定，则使构成带扩展单元76的多个气缸76b进行动作而使框架保持部件72a下降。因此，固定于框架保持部件72a上的框架F也下降，因此如图8的(a)中双点划线所示那样安装于框架F的扩展带T与相对上升的扩展鼓78的上端缘抵接而被扩展(用T’示出)。其结果是，拉伸力呈放射状作用于粘贴在扩展带T’的层叠体20上，因此沿着沿分割预定线14形成的切削槽120和裂纹110b将层叠体20完全断裂，形成分割槽120’。
若如上述那样形成了分割槽120’，则使带扩展单元76进行动作而返回至扩展鼓78的上端位置和框架保持部件72a的上表面一致的基准位置。这里，扩展带T一旦通过上述分割工序进行了扩展，如图8的(b)中箭头所示，能够在一定程度上维持对层叠体20作用了拉伸力的状态。因此，由图8的(c)所示的层叠体20的局部放大剖视图能够理解，即使返回至扩展鼓78的上端位置和框架保持部件72a的上表面一致的基准位置，也能够维持分割槽120’的间隙间隔。通过以上，完成分割工序。另外，此时优选对处于层叠体20的外周与框架F的内侧开口之间的区域的扩展带T进行加热。这样，处于该区域的扩展带T发生收缩，能够更可靠地维持对层叠体20的扩展状态。
若完成了上述分割工序，则实施清洗工序。以下，参照图9对清洗工序的实施方式进行说明。
若完成了上述分割工序，则将框架F所支承的层叠体20定位于清洗单元80的下方。如上所述，在该分割工序中，对处于层叠体20与框架F之间的扩展带T施加热，因此通过扩展带T的收缩而维持扩展状态，如图8的(c)所示，维持分割槽120’的间隙。从清洗单元80对形成有该分割槽120’的晶片10的背面10b喷射赋予了规定的压力的清洗水W0，从而对晶片10的背面10b、分割槽120’以及形成于玻璃基板18侧的切削槽100提供清洗水W0。由此，清洗水W0流入至晶片10的整个背面10b、分割槽120’以及切削槽100，将残留在层叠体20上的包含水溶性树脂的切削水W完全去除。通过以上，完成清洗工序，成为将在晶片10的正面10a上借助透明的粘接层B而配设有玻璃基板18的层叠体20分割成各个图像传感器芯片12’的状态。
根据本实施方式，在将层叠体20分割成图像传感器芯片12’时，使切削刀具53从晶片10的背面10b侧切入，一边对该切削位置提供包含水溶性树脂的切削水一边去除形成于晶片10的内部的改质层110a。由此，可避免从改质层110a产生的粉尘附着于图像传感器芯片12’的周围而使品质降低。另外，虽然在将改质层110a去除时使用了切削刀具53，但在通过切削刀具53将改质层110a去除时，晶片10已经变得容易通过由改质层110a和裂纹110b构成的分割起点110进行分割，因此不会在构成图像传感器芯片12’的晶片10的外周施加过量的负荷，可抑制产生缺损等。另外，从改质层110a产生的粉尘与该切削水W一起流动，因此解决了从改质层110a产生的粉尘附着于图像传感器芯片12’的周围而使图像传感器芯片12’的品质降低的问题。
根据本发明，不限于上述实施方式，可提供各种变形例。在上述实施方式中，在完成分割工序时，对处于层叠体20与框架F之间的扩展带T施加热而使该扩展带T收缩，维持扩展带T的扩展状态，但本发明不限于此。刚完成分割工序之后的扩展带T会维持一段时间通过分割工序进行了扩展的状态，因此当在分割工序之后不隔开时间便实施清洗工序的情况下，也可以不对扩展带T实施加热。另外，在实施了分割工序之后所实施的清洗工序中，也可以在喷射清洗水W0之前对处于层叠体20与框架F之间的扩展带T施加热而使该扩展带T收缩。
另外，在上述实施方式中，通过切割装置30来实施在玻璃基板18上形成切削槽100的切削槽形成工序，通过其他切割装置50来实施将形成于晶片10的内部的改质层110a去除的改质层去除工序，但本发明不限于此，也可以仅通过切割装置30或切割装置50中的任意一方来实施切削槽形成工序和改质层去除工序。在该情况下，根据切削部位是玻璃基板18或是晶片10而适当选择切削刀具34和切削刀具53即可，对于在切削时所使用的清洗水，选择由通常的水构成的清洗水W0或包含水溶性树脂的切削水W即可。

Claims (3)

1.一种层叠体的加工方法，将在晶片的正面上借助透明的粘接层而配设有玻璃基板的层叠体分割成各个图像传感器芯片，所述晶片由交叉的多条分割预定线划分而在正面上形成有多个图像传感器，其中，该层叠体的加工方法具有如下的工序：
切削槽形成工序，从层叠体的玻璃基板侧定位切削刀具，对与分割预定线对应的区域进行切削，在该玻璃基板上形成到达粘接层的切削槽；
分割起点形成工序，从晶片的背面侧将对于该晶片具有透过性的波长的激光光线的聚光点定位于该晶片的与该分割预定线对应的区域的内部而照射该激光光线，在该晶片的内部连续地形成改质层，并且形成从该改质层到达该粘接层的裂纹，从而形成分割起点；
层叠体支承工序，至少在该切削槽形成工序之后，将该层叠体的玻璃基板侧借助扩展带而支承于具有对该层叠体进行收纳的大小的开口部的框架；
改质层去除工序，一边从该层叠体的晶片侧提供混入有水溶性树脂的切削水，一边将切削刀具定位于与该分割预定线对应的区域而进行切削，将形成于该晶片的内部的该改质层去除；
分割工序，在实施了该改质层去除工序之后，对该扩展带进行扩展而将该层叠体分割成各个图像传感器芯片；以及
清洗工序，在维持该扩展带的该扩展状态的状态下，从该晶片的背面提供清洗水而对该层叠体进行清洗。
2.根据权利要求1所述的层叠体的加工方法，其中，
在该分割工序或清洗工序中，对处于该层叠体与该框架之间的扩展带施加热而使该扩展带收缩，从而维持扩展状态。
3.根据权利要求1或2所述的层叠体的加工方法，其中，
该清洗工序中所使用的混入有水溶性树脂的切削水通过过滤器而去除切削屑，并循环使用。
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