JP2020088002A - 積層体の加工方法 - Google Patents
積層体の加工方法 Download PDFInfo
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Abstract
Description
上記したように積層体20を形成したならば、積層体20のガラス基板18側から切削溝を形成する切削溝形成工程を実施する。以下に、切削溝形成工程について、図2、及び図3を参照しながら説明する。
上記した切削溝形成工程を実施したならば、積層体支持工程、及び分割起点形成工程を実施する。以下に、図5、図6を参照しながら、積層体支持工程、及び分割起点形成工程について説明する。
波長 :1342nm
繰り返し周波数 :60kHz
平均出力 :1W
加工送り速度 :600mm/秒
上記したように、積層体支持工程、分割起点形成工程を実施したならば、改質層除去工程を実施する。以下に、図7を参照しながら、改質層除去工程について説明する。
上記したように、積層体20を構成するウエーハ10の分割予定ライン14に対応する領域の内部に沿って形成した改質層110aを除去したならば、図8(a)に示す分割装置70を用いて積層体20に対して外力を付与し、積層体20のウエーハ10に形成されたイメージセンサー12を個々のイメージセンサーチップ12’に分割する分割工程を実施する。
12:イメージセンサー
12’:イメージセンサーチップ
14:分割予定ライン
18:ガラス基板
20:積層体
30、50:ダイシング装置
34、53:切削ブレード
40:レーザー加工装置
42:レーザー光線照射手段
42a:集光器
60:切削水供給回路
70:分割装置
76:テープ拡張手段
80:洗浄手段
100:切削溝
110:分割起点
110a:改質層
110b:クラック
120:切削溝
120’:分割溝
B:接着層(接着剤)
F:フレーム
T:拡張テープ
W:切削水
W0:洗浄水
Claims (3)
- 複数のイメージセンサーが分割予定ラインで区画され表面に複数形成されたウエーハの表面に透明な接着層を介してガラス基板が配設された積層体を個々のイメージセンサーチップに分割する積層体の加工方法であって、
積層体のガラス基板側から切削ブレードを位置付けて分割予定ラインに対応する領域を切削して接着層に達する切削溝を該ガラス基板に形成する切削溝形成工程と、
ウエーハの裏面側から該ウエーハに対して透過性を有する波長のレーザー光線の集光点を該ウエーハの分割予定ラインに対応する領域の内部に位置付けて照射し、該ウエーハの内部に連続的に改質層を形成すると共に該改質層から該接着層に達するクラックを形成して分割起点を形成する分割起点形成工程と、
少なくとも該切削溝形成工程の後、該積層体を収容する大きさの開口部を有するフレームに拡張テープを介して該積層体のガラス基板側を支持する積層体支持工程と、
該積層体のウエーハ側から水溶性樹脂が混入した切削水を供給しながら切削ブレードを分割予定ラインに対応する領域に位置付けて切削し、該ウエーハの内部に形成された該改質層を除去する改質層除去工程と、
該改質層除去工程を実施した後、該拡張テープを拡張して該積層体を個々のイメージセンサーチップに分割する分割工程と、
該拡張テープの該拡張状態を維持した状態で洗浄水を該ウエーハの裏面から供給して該積層体を洗浄する洗浄工程と、
から少なくとも構成される積層体の加工方法。 - 該分割工程、又は洗浄工程において、該積層体と該フレームとの間にある拡張テープに熱を加えて収縮させて拡張状態を維持する請求項1に記載の積層体の加工方法。
- 該洗浄工程において使用する水溶性樹脂が混入した切削水は、フィルタによって切削屑を除去し、循環して使用される請求項1又は2に記載の積層体の加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2018215632A JP7164412B2 (ja) | 2018-11-16 | 2018-11-16 | 積層体の加工方法 |
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US16/680,591 US11069543B2 (en) | 2018-11-16 | 2019-11-12 | Laminate processing method |
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JP2015207604A (ja) * | 2014-04-17 | 2015-11-19 | 株式会社ディスコ | ウェーハの加工方法 |
JP2017028259A (ja) * | 2015-07-24 | 2017-02-02 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、製造方法、基板分割方法 |
WO2017077792A1 (ja) * | 2015-11-05 | 2017-05-11 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び、電子機器 |
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JP2015207604A (ja) * | 2014-04-17 | 2015-11-19 | 株式会社ディスコ | ウェーハの加工方法 |
JP2017028259A (ja) * | 2015-07-24 | 2017-02-02 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、製造方法、基板分割方法 |
WO2017077792A1 (ja) * | 2015-11-05 | 2017-05-11 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び、電子機器 |
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