CN111146074A - 基板处理方法及基板处理装置 - Google Patents
基板处理方法及基板处理装置 Download PDFInfo
- Publication number
- CN111146074A CN111146074A CN201910991490.9A CN201910991490A CN111146074A CN 111146074 A CN111146074 A CN 111146074A CN 201910991490 A CN201910991490 A CN 201910991490A CN 111146074 A CN111146074 A CN 111146074A
- Authority
- CN
- China
- Prior art keywords
- substrate
- recovery
- spin chuck
- speed
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明的实施例提供一种基板处理方法及基板处理装置,多个回收杯布置成多级,向在所述回收杯的内侧布置的旋转卡盘上的基板喷射处理液来进行液处理工艺,其中,在所述回收杯中任一个回收杯发生高度改变的过渡时间区,连动于所述回收杯的高度改变而调节支承基板的旋转卡盘的旋转速度。
Description
技术领域
本发明涉及能够防止药液回收杯的污染的基板处理方法及基板处理装置。
背景技术
一般而言,半导体器件通过在基板上以薄膜形态蒸镀各种物质并对其进行图案化来制造。为此,需要光刻、薄膜形成工艺等诸多步骤的彼此不同基板处理工艺。在各个处理工艺中,可以将基板安装于向相应工艺提供最佳条件的腔室来进行处理。
图1是展示普通基板处理系统的俯视图。
参考图1,基板处理系统包括索引组件10及工艺组件20。
在此,基板是将硅晶圆、玻璃基板、有机基板等都包括的概括性概念。
索引组件10从外部传送接收基板并向工艺组件20传送基板。索引组件10包括装载腔室11和移送架12。
在装载腔室11放置用于容纳基板的容器11a。容器11a可以使用前开式晶圆传送盒(FOUP:Front Opening Unified Pod)。容器11a可以通过空中运输系统(OHT:OverheadTransfer)从外部向装载腔室11运进或从装载腔室11向外部运出。
移送架12在放置于装载腔室11的容器11a与工艺组件20之间传送基板。移送架12包括索引机器人12a和索引导轨12b。索引机器人12a可以在索引导轨12b上移动并传送基板。例如,索引机器人12a可以将基板从容器11a取出而放置于后述的缓冲槽。
工艺组件20包括缓冲腔室21、移送腔室22、工艺腔室23。
缓冲腔室21提供在索引组件10与工艺组件20之间传送的基板临时停留的空间。在缓冲腔室21可以提供有放置基板的缓冲槽21a。缓冲槽21a可以提供有多个,由此基板也可以向缓冲腔室21传入多个。
移送腔室22在布置于其周边的缓冲腔室21与工艺腔室23之间传送基板。移送腔室22包括移送机器人22a和移送导轨22b。移送机器人22a可以在移送导轨22b上移动并传送基板。即,移送腔室22的移送机器人22a可以取出放置于缓冲槽21a的基板并将其向工艺腔室23传送。
工艺腔室23可以提供有一个或多个。工艺腔室23在一侧具备用于供基板出入的出入口,出入口可以通过门开闭。工艺腔室可以布置成提供有出入口的一侧面朝向移送腔室22。
工艺腔室23对基板执行预定的工艺。例如,工艺腔室23可以执行光致抗蚀剂涂布、显影、清洗、热处理等工艺。
另一方面,残留在基板表面的颗粒(Particle)、有机污染物、金属污染物等异物对半导体器件的特性和生产收率带来较多影响。为此,去除附着在基板表面的各种异物的清洗处理在半导体制造工艺中非常重要,在制造半导体的各单元工艺的前后步骤中实施将基板清洗处理的工艺。
一般而言,基板的清洗处理包括:利用药液去除残留在基板上的金属异物、有机物质或颗粒等的药液处理工艺;利用去离子水去除残留在基板上的药液的冲洗工艺;以及利用干燥处理液及/或干燥气体等干燥基板的干燥工艺。
清洗处理通过向基板供给处理液来执行。在基板的外侧,上方开放的多个回收杯提供为构成多级,各个回收杯会对应于药液处理工艺、冲洗工艺、干燥工艺时而升降。
在进行清洗工艺时,通常基板会旋转,向基板提供的处理液在基板旋转时的离心力下向回收杯飞散,在之前工艺中喷出的处理液可能导致与其处理液对应的回收杯以外的回收杯被污染。
现有技术文献
专利文献
专利文献1:韩国公开专利10-2010-0060094
发明内容
本发明提供一种能够防止在基板的药液处理时在之前工艺中喷出的药液导致之后工艺的回收杯被污染的基板处理装置及基板处理方法。
本发明的目的不限于前述,未提及的本发明的其它目的及优点可以通过以下的说明得到理解。
本发明的实施例的基板处理方法可以是,多个回收杯布置成多级,向在所述回收杯的内侧布置的旋转卡盘上的基板喷射处理液来进行液处理工艺,其中,在所述回收杯中任一个回收杯发生高度改变的过渡时间区,连动于所述回收杯的高度改变而调节支承基板的旋转卡盘的旋转速度。
在本发明的实施例中,可以是,在所述回收杯发生高度改变时,临时减速所述旋转卡盘的旋转速度。
在本发明的实施例中,可以是,所述过渡状态是改变回收杯的级数、改变喷射的处理液的种类和中断处理液的供给的状态中任一个。
在本发明的实施例中,可以是,所述液处理工艺包括:第一时间区,利用药液去除残留在基板上的异物,并使旋转卡盘以第一速度旋转;第二时间区,利用冲洗液清洗涂布在基板的药液,并使旋转卡盘以第二速度旋转;以及第三时间区,干燥冲洗处理后的基板,并使旋转卡盘以第三速度旋转。此时,可以是,在所述第二时间区期间,使旋转卡盘的旋转速度逐渐增加。
在本发明的实施例中,可以是,在所述第一时间区与第二时间区之间还包括旋转卡盘以比所述第一速度慢的第一调节速度旋转的第一过渡区,在所述第二时间区与第三时间区之间还包括旋转卡盘以比所述第二速度慢的第二调节速度旋转的第二过渡区。
另外,本发明的实施例的基板处理装置可以是,包括:支承单元,具备支承基板并使基板旋转的旋转卡盘;喷射单元,向所述基板提供处理液;回收单元,包括在所述旋转卡盘的外侧以多级设置有多个的回收杯,并回收处理所述基板后的一种以上的处理液;以及控制单元,控制所述支承单元、喷射单元、回收单元,所述控制单元进行以下控制:使所述喷射单元向以设定速度旋转的所述旋转卡盘上的基板喷射处理液,之后在所述旋转卡盘与所述回收单元的相对高度改变时,使所述旋转卡盘以比所述设定速度慢的调节速度旋转。此时,所述旋转卡盘与所述回收单元的相对高度发生改变的时候是多级的所述回收杯中任一个回收杯下降的时侯。
在本发明的实施例中,可以是,所述回收杯包括回收第一处理液的第一回收杯、回收第二处理液的第二回收杯、回收第三处理液的第三回收杯。可以是,在所述回收杯的上部设置有向旋转卡盘方向向上倾斜的倾斜部。
根据本发明的实施例,在液处理工艺中回收杯发生高度改变的过渡时间区,连动于由多个构成的回收杯的高度改变而选择性地使旋转卡盘的旋转速度减速,从而能够最小化整体工艺速度的拖延,能够容易地保持管理回收杯的清洁度。
应当理解,本发明的效果不限于以上所述的效果,而是包括从本发明的详细说明或权利要求书中所记载的发明的构成能够推出的所有效果。
附图说明
图1是示出普通基板处理系统的俯视图。
图2是示出本发明的一实施例的基板处理装置的截面图。
图3是示出本发明的一实施例的基板处理装置的运转过程的图。
图4是示出本发明实施例及比较例的曲线图。
附图标记说明
100:支承单元;110:旋转卡盘;111:支承销;112:卡盘销;120:旋转轴;130:第一驱动部;200:喷射单元;210:喷嘴;220:喷嘴臂;230:第一升降轴;240:第二驱动部;300:回收单元;310:回收杯;311:第一回收杯;311a:第一回收管线;312:第二回收杯;312a:第二回收管线;313:第三回收杯;313a:第三回收管线;320:第二升降轴;330:第三驱动部;400:控制单元。
具体实施方式
以下,参考所附的附图,详细说明本发明的实施例。本发明能够以各种不同形态实现,不限于此处说明的实施例。
为了明确说明本发明,对于与本发明的本质无关的部分,有时省略对其的具体说明,对在整个说明书中相同或类似的构成要件有时赋予相同的附图标记。
另外,当说明为某部分“包括”某构成要件时,其除非有特别相反的记载,并非排除其它构成要件而是意指可以还包括其他构成要件。在此所使用的专业术语仅出于提及特定实施例的意图,无意限定本发明,除非在本说明书中另有定义,可以以具备本发明所属技术领域的一般知识的人所理解的概念来解释。
图2是示出本发明的一实施例的基板处理装置的结构的截面图。
参考图2,基板处理装置包括支承单元100、喷射单元200、回收单元300、控制单元400。
支承单元100支承基板,并能够使支承的基板旋转。支承单元100可以包括旋转卡盘110、旋转轴120、第一驱动部130。
旋转卡盘110具有与基板相同或相似的形状。例如,旋转卡盘110可以形成为圆形的平板形态。在旋转卡盘110的顶面具备支承销111和卡盘销112。支承销111支承基板的底面。卡盘销112支承基板的侧面,以防止基板脱离固定位置。
旋转轴120连接于旋转卡盘110的下侧。旋转轴120从第一驱动部130接收旋转力而使旋转卡盘110旋转。由此,安放于旋转卡盘110的基板能够旋转。
喷射单元200向基板喷射处理液。处理液可以是用于预定工艺的药液、用于冲洗药液的冲洗液、用于干燥冲洗液的干燥液中至少一个。喷射单元200包括喷嘴210、喷嘴臂220、第一升降轴230、第二驱动部240。
喷嘴210向安放于旋转卡盘110的基板喷射处理液。喷嘴210可以位于基板的上侧中央部分。喷嘴210备置于喷嘴臂220的一端底面。喷嘴臂220结合于能够升降或旋转的第一升降轴230。第二驱动部240通过使第一升降轴230升降或旋转而能够调节喷嘴210的位置。
回收单元300回收供给至基板的处理液。若通过喷射单元200向基板供给处理液,则支承单元100使基板旋转而能够使处理液均匀地供给至基板的全部区域。在进行工艺时,若基板旋转,则供给至基板的处理液在其离心力下向基板的外侧飞散。向基板的外侧飞散的处理液可以通过回收单元300回收。回收单元300包括回收杯310、回收管线、第二升降轴320、第三驱动部330。
回收杯310可以在旋转卡盘110的周围形成为上侧开放的圆筒形。回收杯310可以重叠多个不同直径的回收杯而构成。例如,回收杯可以以从内侧起第一回收杯311、第二回收杯312、第三回收杯313构成。各个回收杯311、312、313可以回收工艺中所使用的处理液中彼此不同的处理液。
多个回收杯311、312、313可以以使其高度不同的方式布置成多级。例如,可以布置成多个回收杯311、312、313中越是位于离旋转卡盘110远处的回收杯,其高度越高。即,可以布置成第一回收杯311的高度最低,并第三回收杯313的高度最高。
在各个回收杯311、312、313的上部可以形成有倾斜部。倾斜部形成为向回收杯的内侧方向、即旋转卡盘110方向向上倾斜。倾斜部能够防止从基板飞散的处理液向回收杯的开放的上侧排出。
在各个回收杯,向其下侧方向连接有回收管线311a、312a、313a。各个回收管线311a、312a、313a回收通过各个回收杯流入的处理液。回收的处理液可以通过再使用系统而再使用。
第二升降轴320连接于回收杯。第二升降轴320从第三驱动部330接收动力而使回收杯上下移动。各个回收杯能够单独上升及下降。根据回收杯上下移动,回收杯针对支承单元100的相对高度改变。
第三驱动部330向第二升降轴320提供用于上升或下降的驱动力。即,第三驱动部330能够通过第二升降轴320使回收杯升降而调节成工艺所要的高度。
因此,当基板放置于支承单元100或从支承单元100抬起时,回收杯下降,以使支承单元100比回收杯的高度向上凸出。另外,在进行工艺时,调节回收杯的高度,以使得根据供给至基板的处理液的种类,处理液能够向已设定的回收杯流入。例如,在通过第一处理流体处理基板的期间,第一回收杯311占位成与基板的高度对应。之后,在通过第二处理流体处理基板时,第一回收杯311下降,第二回收杯312占位成与基板的高度对应。另外,在通过第三处理流体处理基板时,第二回收杯312下降,第三回收杯313占位成与基板的高度对应。
另一方面,各个回收杯也可以单独升降,但是一实施例的回收杯由于其高度布置成不同,因此也可以是回收杯全部升降,以在进行工艺时与基板的高度对应。另外,在一实施例中,使回收杯沿上下方向升降,但是也可以构成为旋转卡盘110上下升降而使基板的高度与回收杯对应。
控制单元400控制支承单元100、喷射单元200、回收单元300。即,控制单元400能够控制旋转卡盘110的旋转速度、喷嘴210的运转、回收杯的升降等。
控制单元400能够使喷射单元200向旋转卡盘110的顶面直接供给处理液。
控制单元400能够在使旋转卡盘110以第一速度旋转的同时供给处理液之后,使旋转卡盘110以第二速度旋转。第二速度可以控制成比第一速度快。另外,控制单元400能够在旋转卡盘110以第二速度旋转的期间,中断向旋转卡盘110供给处理液。
控制单元400控制回收单元300。根据工艺,可以将回收杯的高度在上下方向上调节。即,可以调节回收杯针对旋转卡盘110的顶面高度的相对高度,或者考虑从旋转卡盘110的顶面飞散的处理液的路径来调节回收杯的高度。例如,可以使旋转卡盘110以工艺所需的设定速度旋转之后,将旋转卡盘110的旋转速度减速到比设定速度慢的调节速度,使多级回收杯中任一个回收杯下降。
图3是示出本发明的一实施例的基板处理过程的图,图4是示出本发明的实施例及比较例的曲线图。
参考图3及图4,一实施例的基板处理过程包括:在基板处理过程中过渡状态(Transient Condition)下改变回收杯的高度的步骤;连动于回收杯的高度改变而调节支承基板的旋转卡盘110的旋转速度的步骤。此时,在基板处理过程中过渡状态下,可以与回收杯的高度改变一起执行处理液喷嘴的改变、处理液的供给中断等,在这种过渡状态时,旋转卡盘110的旋转速度临时减速。
例如,一实施例的基板处理过程可以包括第一时间区A1、第二时间区A2、第三时间区A3。
第一时间区A1是将第一处理液处理在基板的区间。在第一时间区A1,向以第一速度旋转的旋转卡盘110上的基板喷射第一处理液,对应于基板的高度而对应布置第一回收杯311。例如,第一时间区A1可以是利用药液而将残留在基板上的金属异物、有机物质或颗粒等去除的药液处理区间。
第二时间区A2是将第二处理液处理在基板的区间。在第二时间区A2,向以第二速度旋转的旋转卡盘110上的基板喷射第二处理液,对应于基板的高度而对应布置第二回收杯312。例如,第二时间区A3可以是利用去离子水(DIW)等冲洗液清洗涂布于基板的药液的冲洗处理区间。
在第二时间区A2,可以将旋转卡盘110的旋转速度不保持一定而是逐渐增加。例如,在将旋转卡盘110的旋转速度逐渐改变成高速的情况下,去离子水(DIW)能够遍及从基板至第二回收杯312的内壁全部飞散,因此能够将第二回收杯312的内部全部清洗。
在第三时间区A3,向以第三速度旋转的旋转卡盘110上的基板喷射第三处理液,对应于基板的高度而对应布置第三回收杯313。第三时间区A3可以是干燥冲洗处理后的基板的区间。为了干燥基板,可以提供第三处理液、例如用于干燥冲洗液的干燥处理液。干燥处理液例如可以适用IPA。在第三时间区A3,可以与干燥处理液一起将氮气(N2)等干燥气体向基板供给来进行干燥工艺。
从第一时间区A1向第二时间区A2转移的过渡状态中备置有第一过渡区TC1。在第一过渡区TC1,中断来自喷射单元200的第一处理液喷射,用于回收第一处理液的第一回收杯311下降。由此,布置在第一回收杯311的外侧的第二回收杯312对应于基板的高度而占位。
另一方面,在第一过渡区TC1,即使是第一处理液的喷射中断的状态,在基板上可能仍残留有预定量的第一处理液。如此残留的第一处理液在基板的旋转下向回收单元300飞散而可能污染第二回收杯312。因此,在一实施例中,在第一过渡区TC1,将旋转卡盘110的旋转速度减速到比第一速度慢的第一调节速度,从而根据旋转卡盘110的减速后的旋转速度,使涂布在基板的第一处理液的飞散距离减少。由此,即使残留在基板上的第一处理液向回收单元300飞散,也能够仅向下降的第一回收杯311回收,而不会向第二回收杯312飞散。由此,能够防止第二回收杯312的不必要的污染。
但是,如图4的比较例那样,在当第一回收杯311下降时将旋转卡盘110的旋转速度不减速而保持第一速度的情况下,残留在基板的第一处理液其飞散路径原样保持,从而不仅是第一回收杯311,还会向第二回收杯312飞散。因此,在用于在之后工艺中回收第二处理液的第二回收杯312中混合有第一处理液和第二处理液,由此第二回收杯312可能被污染。
从第二时间区A2向第三时间区A3转移的过渡状态中备置有第二过渡区TC2。在第二过渡区TC2,用于回收第二处理液的第二回收杯312下降。由此,布置在第二回收杯312的外侧的第三回收杯313对应于基板的高度而占位。此时,在一实施例中,将旋转卡盘110的旋转速度减速到比第二速度慢的第二调节速度,从而根据旋转卡盘110的减速后的旋转速度,使涂布在基板的第二处理液的飞散距离减少。因此,第二处理液会向第二回收杯312落下,而不会向第三回收杯313飞散。因此,能够防止第三回收杯313的不必要的污染。
但是,如图4的比较例那样,在当第二回收杯312下降时将旋转卡盘110的旋转速度不减速而保持第二速度的情况下,涂布在基板的第二处理液不仅是第二回收杯312,还会向第三回收杯313飞散。因此,在用于在之后工艺中回收第三处理液的第三回收杯313中混合有第二处理液和第三处理液,由此第三回收杯313可能被污染。
本发明所属技术领域的从业人员能够将本发明不改变其技术思想和必要特征的情况下以其它具体形态实施,因此应当理解为以上所记述的实施例在所有方面为示例性并非限定性。
比起说明书,权利要求书更能体现本发明的范围,应解释为权利要求书的意思、范围以及从其等价概念导出的所有变更或变形形态均包括在本发明的范围内。
Claims (10)
1.一种基板处理方法,多个回收杯布置成多级,向在所述回收杯的内侧布置的旋转卡盘上的基板喷射处理液来进行液处理工艺,其中,
在所述回收杯中任一个回收杯发生高度改变的过渡时间区,连动于所述回收杯的高度改变而调节支承基板的旋转卡盘的旋转速度。
2.根据权利要求1所述的基板处理方法,其中,
在所述回收杯发生高度改变时,临时减速所述旋转卡盘的旋转速度。
3.根据权利要求1所述的基板处理方法,其中,
在所述过渡状态中,改变回收杯的级数,或改变喷射的处理液的种类,或中断处理液的供给。
4.根据权利要求1所述的基板处理方法,其中,
所述液处理工艺包括:
第一时间区,利用药液去除残留在基板上的异物,并使旋转卡盘以第一速度旋转;
第二时间区,利用冲洗液清洗涂布在基板的药液,并使旋转卡盘以第二速度旋转;以及
第三时间区,干燥冲洗处理后的基板,并使旋转卡盘以第三速度旋转。
5.根据权利要求4所述的基板处理方法,其中,
在所述第一时间区与第二时间区之间还包括旋转卡盘以比所述第一速度慢的第一调节速度旋转的第一过渡区,在所述第二时间区与第三时间区之间还包括旋转卡盘以比所述第二速度慢的第二调节速度旋转的第二过渡区。
6.根据权利要求4所述的基板处理方法,其中,
在所述第二时间区期间,使旋转卡盘的旋转速度逐渐增加。
7.一种基板处理装置,包括:
支承单元,具备支承基板并使基板旋转的旋转卡盘;
喷射单元,向所述基板提供处理液;
回收单元,包括在所述旋转卡盘的外侧以多级设置有多个的回收杯,并回收处理所述基板后的一种以上的处理液;以及
控制单元,控制所述支承单元、喷射单元、回收单元,
所述控制单元进行以下控制:
使所述喷射单元向以设定速度旋转的所述旋转卡盘上的基板喷射处理液,之后在所述旋转卡盘与所述回收单元的相对高度改变时,使所述旋转卡盘以比所述设定速度慢的调节速度旋转。
8.根据权利要求7所述的基板处理装置,其中,
所述旋转卡盘与所述回收单元的相对高度改变的时候是多级的所述回收杯中任一个回收杯下降的时候。
9.根据权利要求7所述的基板处理装置,其中,
所述回收杯包括回收第一处理液的第一回收杯、回收第二处理液的第二回收杯、回收第三处理液的第三回收杯。
10.根据权利要求7所述的基板处理装置,其中,
在所述回收杯的上部设置有向旋转卡盘方向向上倾斜的倾斜部。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180135371A KR102139605B1 (ko) | 2018-11-06 | 2018-11-06 | 기판 처리 방법 및 기판 처리 장치 |
KR10-2018-0135371 | 2018-11-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111146074A true CN111146074A (zh) | 2020-05-12 |
CN111146074B CN111146074B (zh) | 2023-08-04 |
Family
ID=70458924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910991490.9A Active CN111146074B (zh) | 2018-11-06 | 2019-10-18 | 基板处理方法及基板处理装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11361962B2 (zh) |
KR (1) | KR102139605B1 (zh) |
CN (1) | CN111146074B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112090890A (zh) * | 2020-07-30 | 2020-12-18 | 中国科学院微电子研究所 | 光刻胶收集杯清理方法及光刻胶收集杯清理设备 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102619967B1 (ko) * | 2020-05-22 | 2024-01-03 | 세메스 주식회사 | 기판 처리 장치 및 액 공급 유닛 |
KR102571748B1 (ko) * | 2021-05-04 | 2023-08-25 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR102628419B1 (ko) * | 2021-07-08 | 2024-01-25 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080110861A1 (en) * | 2004-02-24 | 2008-05-15 | Shinji Kajita | Substrate Processing Apparatus and Method |
KR20080058556A (ko) * | 2006-12-22 | 2008-06-26 | 세메스 주식회사 | 기판 처리 방법 및 이를 수행하기 위한 장치 |
JP2009076878A (ja) * | 2007-08-29 | 2009-04-09 | Tokyo Electron Ltd | 基板処理装置、基板処理方法、および記憶媒体 |
KR20100047464A (ko) * | 2008-10-29 | 2010-05-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP2015176996A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社Screenホールディングス | 基板処理装置 |
CN104992897A (zh) * | 2013-09-27 | 2015-10-21 | 斯克林集团公司 | 处理杯清洗方法、基板处理方法以及基板处理装置 |
KR20160008719A (ko) * | 2014-07-14 | 2016-01-25 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR101623412B1 (ko) * | 2015-03-31 | 2016-06-07 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
US20170001221A1 (en) * | 2015-06-30 | 2017-01-05 | Semes Co., Ltd. | Method and apparatus for treating substrate |
US20180029089A1 (en) * | 2016-07-26 | 2018-02-01 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
KR20180078743A (ko) * | 2016-12-30 | 2018-07-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN108470694A (zh) * | 2013-08-08 | 2018-08-31 | 斯克林集团公司 | 基板处理装置以及基板处理方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5711809A (en) * | 1995-04-19 | 1998-01-27 | Tokyo Electron Limited | Coating apparatus and method of controlling the same |
JP3476305B2 (ja) * | 1996-03-18 | 2003-12-10 | 大日本スクリーン製造株式会社 | 回転式基板処理装置 |
TW418452B (en) * | 1997-10-31 | 2001-01-11 | Tokyo Electron Ltd | Coating process |
US6207357B1 (en) * | 1999-04-23 | 2001-03-27 | Micron Technology, Inc. | Methods of forming photoresist and apparatus for forming photoresist |
US6248169B1 (en) * | 1999-06-01 | 2001-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual-cup coating apparatus |
JP4426036B2 (ja) * | 1999-12-02 | 2010-03-03 | 東京エレクトロン株式会社 | 基板処理装置 |
US20020066475A1 (en) * | 2000-06-26 | 2002-06-06 | Steven Verhaverbeke | Chuck for holding wafer |
JP4531998B2 (ja) * | 2001-02-21 | 2010-08-25 | Okiセミコンダクタ株式会社 | 廃液分離回収システム及び廃液分離回収方法 |
TW554075B (en) * | 2002-04-17 | 2003-09-21 | Grand Plastic Technology Corp | Puddle etching method of thin film using spin processor |
US7584760B2 (en) * | 2002-09-13 | 2009-09-08 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
KR101039765B1 (ko) * | 2003-03-20 | 2011-06-09 | 램 리서치 아게 | 디스크상 물품의 습식 처리장치 및 처리방법 |
JP2006223936A (ja) * | 2005-02-15 | 2006-08-31 | Fuji Photo Film Co Ltd | スピンコート塗布方法とその光ディスク、及びスピンコート塗布装置 |
JP4760516B2 (ja) * | 2005-12-15 | 2011-08-31 | 東京エレクトロン株式会社 | 塗布装置及び塗布方法 |
JP2007305864A (ja) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 現像方法及びそれを用いた半導体装置の製造方法 |
US9159593B2 (en) * | 2008-06-02 | 2015-10-13 | Lam Research Corporation | Method of particle contaminant removal |
KR20100060094A (ko) | 2008-11-27 | 2010-06-07 | 세메스 주식회사 | 기판 이면 세정 방법 |
JP4816747B2 (ja) * | 2009-03-04 | 2011-11-16 | 東京エレクトロン株式会社 | 液処理装置及び液処理方法 |
JP5683259B2 (ja) * | 2010-12-28 | 2015-03-11 | ラピスセミコンダクタ株式会社 | 基板処理装置及び基板処理方法 |
JP2012196609A (ja) * | 2011-03-18 | 2012-10-18 | Tokyo Electron Ltd | 塗布処理方法および塗布処理装置 |
US9484229B2 (en) * | 2011-11-14 | 2016-11-01 | Lam Research Ag | Device and method for processing wafer-shaped articles |
US10395915B2 (en) * | 2013-02-28 | 2019-08-27 | Semes Co., Ltd. | Nozzle assembly, substrate treatment apparatus including the nozzle assembly, and method of treating substrate using the assembly |
JP6044428B2 (ja) * | 2013-04-04 | 2016-12-14 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
US9698029B2 (en) * | 2014-02-19 | 2017-07-04 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
US9779979B2 (en) * | 2014-02-24 | 2017-10-03 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles |
KR101681183B1 (ko) * | 2014-07-11 | 2016-12-02 | 세메스 주식회사 | 기판 처리 장치 |
US10553421B2 (en) * | 2015-05-15 | 2020-02-04 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
TWI666684B (zh) * | 2015-11-16 | 2019-07-21 | 日商東京威力科創股份有限公司 | 塗佈膜形成方法、塗佈膜形成裝置及記憶媒體 |
JP7001374B2 (ja) * | 2017-06-19 | 2022-02-04 | 東京エレクトロン株式会社 | 成膜方法、記憶媒体及び成膜システム |
EP3576133B1 (en) * | 2018-05-31 | 2023-11-22 | SCREEN Holdings Co., Ltd. | Substrate processing method |
-
2018
- 2018-11-06 KR KR1020180135371A patent/KR102139605B1/ko active IP Right Grant
-
2019
- 2019-10-18 CN CN201910991490.9A patent/CN111146074B/zh active Active
- 2019-11-04 US US16/673,267 patent/US11361962B2/en active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080110861A1 (en) * | 2004-02-24 | 2008-05-15 | Shinji Kajita | Substrate Processing Apparatus and Method |
KR20080058556A (ko) * | 2006-12-22 | 2008-06-26 | 세메스 주식회사 | 기판 처리 방법 및 이를 수행하기 위한 장치 |
JP2009076878A (ja) * | 2007-08-29 | 2009-04-09 | Tokyo Electron Ltd | 基板処理装置、基板処理方法、および記憶媒体 |
KR20100047464A (ko) * | 2008-10-29 | 2010-05-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN108470694A (zh) * | 2013-08-08 | 2018-08-31 | 斯克林集团公司 | 基板处理装置以及基板处理方法 |
CN104992897A (zh) * | 2013-09-27 | 2015-10-21 | 斯克林集团公司 | 处理杯清洗方法、基板处理方法以及基板处理装置 |
JP2015176996A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社Screenホールディングス | 基板処理装置 |
KR20160008719A (ko) * | 2014-07-14 | 2016-01-25 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR101623412B1 (ko) * | 2015-03-31 | 2016-06-07 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
US20170001221A1 (en) * | 2015-06-30 | 2017-01-05 | Semes Co., Ltd. | Method and apparatus for treating substrate |
CN106328490A (zh) * | 2015-06-30 | 2017-01-11 | 细美事有限公司 | 用于处理基板的方法和装置 |
US20180029089A1 (en) * | 2016-07-26 | 2018-02-01 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
KR20180078743A (ko) * | 2016-12-30 | 2018-07-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112090890A (zh) * | 2020-07-30 | 2020-12-18 | 中国科学院微电子研究所 | 光刻胶收集杯清理方法及光刻胶收集杯清理设备 |
CN112090890B (zh) * | 2020-07-30 | 2022-07-19 | 中国科学院微电子研究所 | 光刻胶收集杯清理方法及光刻胶收集杯清理设备 |
Also Published As
Publication number | Publication date |
---|---|
US20200144054A1 (en) | 2020-05-07 |
KR102139605B1 (ko) | 2020-08-12 |
CN111146074B (zh) | 2023-08-04 |
KR20200052505A (ko) | 2020-05-15 |
US11361962B2 (en) | 2022-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111146074B (zh) | 基板处理方法及基板处理装置 | |
US11148150B2 (en) | Liquid dispensing nozzle and substrate treating apparatus | |
US7275553B2 (en) | Liquid processing apparatus and liquid processing method | |
JP4189125B2 (ja) | マイクロエレクトロニックワークピースを処理するための微細環境リアクタ | |
KR101887696B1 (ko) | 액처리 장치 및 액처리 방법 | |
KR102359530B1 (ko) | 기판 처리 방법, 기판 처리 장치, 그리고 용기 세정 방법 | |
CN107924832B (zh) | 基板处理方法及基板处理装置 | |
CN106816399B (zh) | 基板处理装置及方法 | |
KR101623412B1 (ko) | 기판 처리 장치 및 방법 | |
KR102325059B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
CN112170035B (zh) | 喷嘴装置以及用于处理基板的装置和方法 | |
KR20180013327A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR101927919B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR20200078791A (ko) | 기판 처리 장치, 그리고 노즐 세정 방법 | |
KR20210000355A (ko) | 기판 처리 장치 및 방법 | |
KR102186068B1 (ko) | 기판 처리 방법 및 장치 | |
KR102139606B1 (ko) | 기판 처리 장치 및 방법 | |
KR102392488B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102289486B1 (ko) | 기판 처리 장치 및 방법 | |
KR102193031B1 (ko) | 기판처리장치 및 방법 | |
KR102139604B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102497794B1 (ko) | 기판 처리 장치 및 용기 세정 방법 | |
KR102584570B1 (ko) | 기판 처리 장치 및 비산 저감 방법 | |
KR102583458B1 (ko) | 기판 처리액 회수 유닛 및 이를 구비하는 기판 처리 장치 | |
KR102162189B1 (ko) | 기판 처리 방법 및 기판 처리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |