CN111048650A - 可表面安装的半导体器件 - Google Patents
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Abstract
本发明涉及可表面安装的半导体器件,其包括安装在具有顶表面和底表面的器件衬底(1)上或者集成在该器件衬底中的至少一个半导体元件。一个或数个第一高度的电垫(2)和至少一个第二高度的热垫(3)被布置在器件衬底(1)的底表面处。在所提出的可表面安装的半导体器件中,热垫(3)的高度大于电垫(2)的高度。这允许以容易且可靠的方式将这样的器件安装至具有被局部地去除的介电层的IMS,以将热垫与IMS的金属衬底直接连接。
Description
技术领域
本发明涉及可表面安装的半导体器件,该半导体器件包括安装在具有顶表面和底表面的器件衬底上或者集成在该器件衬底中的至少一个半导体元件,以及二者都被布置在半导体衬底的底表面处的一个或数个第一高度的电连接垫和至少一个第二高度的热垫。这种类型的可表面安装的半导体器件可以安装在包括散热构件的载体衬底上以有效地释放由半导体元件产生的热量。这样的半导体器件的示例是在工作期间需要释放热量的高功率LED。
背景技术
需要散热的可表面安装的半导体器件经常安装在绝缘金属衬底(IMS)上以在工作期间有效地去除热量。这样的绝缘金属衬底常包括散热金属层,通常是由电气绝缘介电层覆盖的平坦薄片金属。为了形成用于接触所安装的半导体器件的导体通路,在介电层上施加导电层。然而,即使具有低热导率的介电材料的薄层也导致组件中的高热阻并且因此导致结温上升。对于具有造成高功率密度的高热功率耗散的小型器件,情况特别是如此。在IMS上安装具有绝缘的热垫(也即由高度导热的材料形成的垫)的SMT(表面安装技术)器件提供了不使用通常的介电层而直接使得热垫与金属衬底良好地热接触的机会。为此,在热垫下面的区域中,介电层是不存在的或者被去除,以借由高度导热的互连层将热垫直接地热连接至金属衬底。
US2011/0180819A1公开了一种具有衬底的底表面处的两个电连接垫和热垫的可表面安装的半导体器件,LED被安装在该衬底上。电连接垫和热垫具有相同的高度,并且经由互连层安装至PCB(印刷电路板)衬底上的导热和导电的层。热垫经由传导层与布置在PCB衬底上的热量释放构件热连接。
WO2004/105142A1公开了一种发光器件的基台。该基台具有安装底座、安装在其上的至少一个发光二极管芯片和形成在安装底座上以电连接至发光芯片的电气导线。安装底座的底表面被配置成被热接合至载体衬底。因为电气导线被提供在安装底座上,所以用于安装底座的材料的选择被限制于诸如陶瓷的非导电材料。这相当地限制了设计自由并且造成次佳的散热。
DE 10 2010 029 529 A1公开了一种用于电子部件(尤其是LED照明器件)的部件载体(尤其是金属核心印刷电路板)。该部件载体具有布置在部件载体的安装板上的热引导元件。该热引导元件与该电子部件接触。
JP 2003 168829 A公开了一种面朝下安装在布线板上的发光二极管芯片。该布线板包括导体板,在该导体板上形成有绝缘层和导体层。该发光二极管芯片的电极通过焊料凸点与导体层连接。发光二极管芯片通过另一焊料凸点与导体板连接。该另一焊料凸点用作热传输构件。
当在热垫下面的介电层被局部地去除的IMS上安装这样的可表面安装的半导体器件时,由于被局部地去除的介电层所引起的不平坦的衬底表面的缘故,电连接垫与导电层之间、以及热垫与金属衬底之间的互连层需要不同量的比如例如焊料的材料。当在衬底上安装半导体器件时,这可能导致连接缺陷。此外,在这种情形中,依靠焊料膏的均匀沉积的互连层的通常的成本有效的应用是不可能的。
发明内容
本发明的目的是提供一种上述类型的可表面安装的半导体器件,其可能以容易且可靠的方式被安装在具有被局部地去除的介电层的绝缘金属衬底上,造成热垫与金属衬底之间的直接热连接。
该目的是利用根据权利要求1的布置实现的。该布置的有利实施例是从属权利要求的主题,或者被描述在说明书的后续部分中。
所提出的可表面安装的半导体器件包括安装在具有顶表面和底表面的器件衬底(特别是半导体衬底)上或者集成在该器件衬底中的至少一个半导体元件。一个或数个第一高度的电连接垫以及至少一个第二高度的热垫二者都被布置在器件衬底的底表面处。第一和第二高度涉及器件衬底的底表面上的电连接垫的厚度和热垫的厚度。半导体元件可以是发光二极管(LED),特别是高功率LED。半导体元件也可以是需要通过热垫散热的任何其它的功能元件。为了在将器件安装至这样的载体时均衡IMS或者类似的载体衬底的表面上的电垫位置和热垫位置之间的高度差,在所提出的半导体器件中,热垫的第二高度大于电连接垫的第一高度。
通过将具有等厚度的导电和导热的互连层施加至IMS的表面,该高度差允许在热垫下面不存在介电层和导电层或者介电层和导电层被去除的IMS上安装所提出的器件。由于互连层能够例如通过焊料膏的均匀沉积而被施加,所以能够以容易的方式实现高度可靠的连接。这样的半导体器件不需要IMS或类似的载体衬底的任何特殊制备。安装过程不会引起额外的处理和成本。对于互连材料或技术的示例是焊料、导热胶、银烧结以及本领域中已知的其它的连接技术。
半导体器件可以包括多于一个的热垫,并且还可以包括两个或多于两个的电连接垫。热垫和电垫优选地通过槽或间隙相互分隔。在器件的实施例中,这些槽或者间隙填充有电气绝缘材料。
IMS的金属衬底上的介电层和导电层的通常的组合厚度在20至300μm之间的范围内,更通常在40至100μm之间。因此,在可表面安装的半导体器件的优选实施例中,第一高度与第二高度之间的差在20至300μm之间,更优选地在40至100μm之间。半导体器件的(多个)热垫和(多个)电垫可以由相同材料制成,优选地由比如铜或铝的金属制成。然而,也可以使用如本领域已知的其它的高度导电和/或导热的材料。
也可以用WL-CSP(晶片级别芯片级封装)技术形成所提出的可表面安装的半导体器件。在该技术中,电垫以及可选的热垫在晶片级别上被施加至半导体器件(例如LED器件)的阵列。
所提出的可表面安装的器件可以安装在由被介电层覆盖的金属板或者金属核心层形成的载体衬底上,导电层被布置在所述介电层上。导电层被适当地构造/设计以提供用于电接触半导体器件的电连接垫的导体通路和垫。为了通过热互连层将(多个)热垫直接地热连接至金属板或者核心层,在(多个)热垫的下面,介电层和导电层是不存在的或者被去除。电连接垫通过电互连层电连接至导电层。这样的载体衬底可以是其中金属板为金属衬底的IMS。对于这样的载体衬底的另一候选者是金属核心印刷电路板(MC-PCB)。数个可表面安装的半导体器件可以以上面所描述的方式被安装在这样的载体衬底上。
所提出的可表面安装的半导体器件和对应的布置能够被有利地用于高功率LED体系结构中,例如用于汽车前照明或其它的照明应用。
依据在下文描述的实施例,本发明的这些和其他方面将是明显的,并且将参照它们来阐明本发明的这些和其它方面。
附图说明
以下结合附图通过示例的方式更详细地描述所提出的可表面安装的半导体器件和布置。图示出了:
图1 穿过根据本发明的可表面安装的半导体器件的示意性横截面;以及
图2 安装在IMS上的图1的半导体器件。
具体实施方式
所提出的可表面安装的半导体器件的示例示意性地示出在图1的横截面中。该图示出了包括集成的半导体元件(图中未明确示出)的器件衬底1。该器件衬底1可以是高功率LED芯片。与热垫3分隔的两个电连接垫2附接至器件衬底1的底表面。电垫2和热垫3可以由相同材料制成,例如由铜制成。我们没有示出防止氧化和/或能够实现可靠的(焊料)互连的可选的涂层或镀层,例如本领域中已知的金镀层。热垫3用作将来自器件衬底1的热量释放至载体衬底上的散热构件的导热构件,半导体器件将被安装至所述载体衬底。电垫2和热垫3由间隙分隔,该间隙填充有绝缘材料4,例如,填充有环氧模塑料(EMC)、硅模塑料(SMC)或如本领域中已知的其它绝缘材料。
为了均衡该器件将被安装至其的IMS-衬底6的衬底表面的高度差,电垫2的高度H1低于热垫3的高度H2,这示出在图2中。IMS-衬底6包括上面具有介电层8的金属板7。导电层9布置在介电层上以允许电接触安装至该IMS-衬底6的半导体器件。正如从图2可以看出的,在所安装的器件的热垫3的下面的区域中,介电层8是不存在的或者被去除。将大致IMS衬底6的介电层8与导电层9的组合的厚度提供给热垫3的厚度,通过使用相同厚度的互连/附接材料5(通常为焊料),器件能够被附接至IMS衬底6。这允许了容易且可靠的安装过程。
当使用WL-CSP技术用于制作LED器件时,电垫以及热垫可以在晶片级别上被施加至LED器件的阵列。例如,通常为一至几百微米的厚的铜层被镀至晶片衬底以得到电垫和热垫。由于镀可以在不同区域中(也即,针对不同的垫)选择性地执行,所以能够相对容易地获得厚度变化。铜层可以在第一过程阶段中被镀至电垫的厚度。然后,在第二过程阶段中利用光致抗蚀剂保护或覆盖电垫。然后,在第三过程阶段中继续镀以形成期望的厚度的热垫。此后,去除保护覆盖层,产生具有不同厚度的电垫和热垫。
尽管已经在附图和前述的描述中详细图示并且描述了本发明,但是这样的图示和描述将被视作是说明性的或示例性的而并非限制性的,本发明不限于所公开的实施例。通过研习附图、公开内容和所附权利要求,在实践所请求保护的发明时,本领域技术人员能够理解并且完成所公开实施例的其它变型。在权利要求中,词语“包括”并不排除其他元件或步骤,并且不定冠词“一”或“一个”并不排除多个。某些手段被叙述在相互不同的从属权利要求中这一纯粹事实不表明这些手段的组合不能被有利地使用。所有的器件的权利要求的特征可以自由地组合。权利要求中的任何附图标记不应解释为限定了本发明的范围。
附图标记列表
1 具有集成的半导体元件的器件衬底
2 电垫
3 热垫
4 绝缘材料
5 附接/互连材料
6 IMS
7 金属板
8 介电层
9 导电层
Claims (8)
1.一种安装在载体衬底上的一个或数个可表面安装的器件的布置,
- 所述载体衬底至少包括由介电层(8)覆盖的金属板(7)或金属核心层,导电层(9)被布置在所述介电层上,
- 所述可表面安装的半导体器件包括安装在器件衬底(1)上或者集成在该器件衬底中的至少一个半导体元件,所述器件衬底(1)具有顶表面和底表面,所述顶表面包括所述半导体元件,所述底表面具有在所述器件的所述底表面处的一个或数个电连接垫(2)和至少一个热垫(3),
其中所述热垫(3)通过槽或间隙与所述(多个)电垫(2)分隔,
其中所述导电层(9)和所述介电层(8)在所述器件的热垫(3)的下面是不存在的或者被去除,并且
其中所述热垫(3)通过热互连层(5)热连接至所述金属板(7)或金属核心层,并且所述电连接垫(2)通过电互连层(5)电连接至所述导电层(9),
其特征在于,
- 所述电连接垫(2)具有第一高度,并且至少一个热垫(3)具有第二高度,所述热垫(3)的第二高度大于所述(多个)电连接垫(2)的第一高度,
- 所述第一高度和所述第二高度的高度差等于所述导电层(9)和所述介电层(8)的厚度之和,并且
- 其中所述热垫(3)和所述金属板(7)或者金属核心层的热互连层(5)和所述电连接垫(2)和所述导电层(9)的电互连层(5)是均匀的沉积层。
2.根据权利要求1所述的器件,
其中所述槽或者间隙填充有电气绝缘材料(4)。
3.根据权利要求1所述的器件,
其中所述热垫(3)被布置在所述底表面的中心部分处。
4.根据权利要求1所述的器件,
其中所述第一高度和所述第二高度之间的差在20至300μm之间。
5.根据权利要求1所述的器件,
其中所述第一高度和第二高度之间的差在40至100μm之间。
6.根据权利要求1所述的器件,
其中所述半导体元件是发光二极管。
7.根据权利要求1所述的布置,
其中所述载体衬底是绝缘金属衬底(IMS)(6)或者金属核心印刷电路板(MC-PCB)。
8.根据权利要求1所述的布置,
其中所述互连层(5)是焊料膏的沉积。
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WO2017095712A1 (en) * | 2015-12-02 | 2017-06-08 | Koninklijke Philips N.V. | Led metal pad configuration for optimized thermal resistance, solder reliability, and smt processing yields |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003168829A (ja) * | 2001-09-19 | 2003-06-13 | Matsushita Electric Works Ltd | 発光装置 |
JP2006100687A (ja) * | 2004-09-30 | 2006-04-13 | Nippon Seiki Co Ltd | 発光ダイオードの実装構造 |
US20060131602A1 (en) * | 2004-12-21 | 2006-06-22 | Ouderkirk Andrew J | Illumination assembly and method of making same |
CN1795567A (zh) * | 2003-05-26 | 2006-06-28 | 松下电工株式会社 | 发光器件 |
DE102010029529A1 (de) * | 2010-05-31 | 2011-12-01 | Osram Gesellschaft mit beschränkter Haftung | Bauelementeträger für eine Leuchtvorrichtung, Leuchtvorrichtung, Verfahren zum Herstellen eines Bauelementeträgers und Verfahren zum Bestücken eines Bauelementeträgers |
JP2012044218A (ja) * | 2005-10-31 | 2012-03-01 | Toyoda Gosei Co Ltd | 発光装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002089221A1 (en) * | 2001-04-23 | 2002-11-07 | Matsushita Electric Works, Ltd. | Light emitting device comprising led chip |
JP4305896B2 (ja) * | 2002-11-15 | 2009-07-29 | シチズン電子株式会社 | 高輝度発光装置及びその製造方法 |
EP1627437B1 (en) * | 2003-05-26 | 2016-03-30 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device |
WO2005067063A1 (en) | 2004-01-12 | 2005-07-21 | Asetronics Ag | Arrangement with a light emitting device on a substrate |
US7296916B2 (en) * | 2004-12-21 | 2007-11-20 | 3M Innovative Properties Company | Illumination assembly and method of making same |
US20060131601A1 (en) | 2004-12-21 | 2006-06-22 | Ouderkirk Andrew J | Illumination assembly and method of making same |
CN101379615B (zh) * | 2006-02-01 | 2013-06-12 | 皇家飞利浦电子股份有限公司 | 盖革式雪崩光电二极管 |
DE102006059702A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE102007053849A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Anordnung umfassend ein optoelektronisches Bauelement |
EP2337986A1 (en) | 2008-09-16 | 2011-06-29 | Koninklijke Philips Electronics N.V. | Light-emitting arrangement |
JP5286045B2 (ja) * | 2008-11-19 | 2013-09-11 | スタンレー電気株式会社 | 半導体発光素子の製造方法 |
US8207554B2 (en) | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8319247B2 (en) | 2010-03-25 | 2012-11-27 | Koninklijke Philips Electronics N.V. | Carrier for a light emitting device |
US8637887B2 (en) * | 2012-05-08 | 2014-01-28 | Advanced Semiconductor Engineering, Inc. | Thermally enhanced semiconductor packages and related methods |
-
2013
- 2013-05-07 US US14/402,212 patent/US9614128B2/en active Active
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-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003168829A (ja) * | 2001-09-19 | 2003-06-13 | Matsushita Electric Works Ltd | 発光装置 |
CN1795567A (zh) * | 2003-05-26 | 2006-06-28 | 松下电工株式会社 | 发光器件 |
JP2006100687A (ja) * | 2004-09-30 | 2006-04-13 | Nippon Seiki Co Ltd | 発光ダイオードの実装構造 |
US20060131602A1 (en) * | 2004-12-21 | 2006-06-22 | Ouderkirk Andrew J | Illumination assembly and method of making same |
JP2012044218A (ja) * | 2005-10-31 | 2012-03-01 | Toyoda Gosei Co Ltd | 発光装置 |
DE102010029529A1 (de) * | 2010-05-31 | 2011-12-01 | Osram Gesellschaft mit beschränkter Haftung | Bauelementeträger für eine Leuchtvorrichtung, Leuchtvorrichtung, Verfahren zum Herstellen eines Bauelementeträgers und Verfahren zum Bestücken eines Bauelementeträgers |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI782601B (zh) * | 2021-06-30 | 2022-11-01 | 旭豐半導體股份有限公司 | 表面安裝微型元件、組件及批次生產元件或組件的方法 |
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