CN1110000C - 光学装置 - Google Patents
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Abstract
一种光学装置,信息信号来自被探测的光记录介质的散射-衍射光。为减少光学装置中部件的数量,简化部件的光学位置的调整,本发明提出一种光学装置,包括一半导体衬底,具有一平面光发射激光部件和一光敏二极管;一光学系统;光敏二极管的布局位置位于光学系统共焦点区域之外,对被照射的部分而言,源自平面光发射激光部件的激光的照射部分的散射-衍射光,照射在此区域内。
Description
技术领域
本发明涉及一种光学装置,适用于条形码读数器、光学记录重现机器中的光学传感器等。
背景技术
在习用光学装置中,例如条形码读数器(BCR),由于各个光学部件是独立装配的,整个装置结构复杂,体积庞大,而且这些光学部件光学位置的调整要求严格的精度。
图1为构成图,表示构成习用条形码读数器的光学装置的一例,包括一氦氖激光器21,一由一聚光镜,一光束分离器等,一条形码读数器B,一扫描镜组成的光学系统;还有包含光敏二极管PD等的光敏二极管部件24,置于光学系统22之外的光路中。这些组成部件以严格的精度,按设定的位置关系设置,以组成光学装置。
氦氖激光器21发出的激光L通过光学系统22,被扫描镜23反射,来扫描条形码B。照射在条形码B上的光被黑色条码吸收,而白色的空白处将光反射回来,于是产生了返回光线。此返回光线又输入光学系统22,并在其中由光束分离器分离,接着被分离的光由光敏二极管24送入信号探测部件。一与所探测的条形码模式相匹配的模拟信号A转换为数字信号D,信号由译码器译码(图中未示)。
如上所述的光学装置,将He-Ne激光器作为光源,体积庞大,因而难以将整个装置的体积缩小;另外在这种光学装置中,将电转换为光的能量转换效率低。
为克服这些缺点,出现了一种在结构上由半导体激光器替代He-Ne激光器作为光源的光学装置。
如图1的光学装置,既使采用半导体激光器作为光源,光学系统的部件数目较多,并且调整各个部件布局要求高精度。
为解决上述问题,本申请人提出一种用于条形码读数器的光学装置,见日本专利申请No.223859/1993(美国专利申请No.416,733),“用于读码器的光学装置”,其中光发射部件和光敏二极管以混合方式设于一个半导体衬底上,如构成图图2所示。
如图2所示光学装置由复合光学部件条形码读数器31,用于聚光的透镜32和可摆动的镜子33组成。
用作条形码读数器31是复合的光学部件,包含半导体芯片34,光敏二极管PD形成在芯片34平面的一部分上,分固定件36固定在半导体芯片34上,在光敏二极管PD的区域之外;一输出激光L的激光二极管LD固设在分固定件36上,此激光二极管LD的高度已调整。
一剖面为直角三角形的棱镜41,固定在光敏二极管PD上,并且棱镜的斜面41a对着激光二极管,斜面41a的一部分设置了反光膜42,作为对于激光L的镜子或半镜,使输入的所有激光L通过未复盖有反光膜42的斜面41a部分。在此光学装置结构中,激光L由激光二极管LD输出,被反光膜42向上反射,反射光被透镜32聚焦,进一步则被镜子33反射,聚焦于条形码B上以读数。此时,镜子33摆动,激光L扫描条形码。
激光L被条形码B反射,进而被镜子33反射,并由透镜32聚焦以输入斜面41a。激光输入斜面41a未被反光膜42复盖的部分,再送至光敏二极管PD。
上述光学装置中,光发射部件由固设在分固定件36上的激光二极管LD和光敏二极管组成,并固设在一个半导体芯片34上,从而减少了光学部件的数量,并使光学部件的调整简单化。
虽然如图2所示的光学装置意味着光学系统部件数量的减少和调整的简单化,但此光学装置要求光发射部件和棱镜与半导体芯片独立准备,然后再装在半导体芯片上。因此,这些部件位置的调整也与习用技术的要求相类似。
发明内容
如上所述,本发明的目的之一是减少光学部件的数量,并使例如条形码读数器等光学装置中光学部件光学位置的调整简单化,从而可使整个装置简单化和小型化,制造容易。
本发明的另一目的是接收来自记录了规定信息的光记录介质的散射光或衍射光读出信息,例如条形码等,以探测信息信号。
根据本申请的第一发明提供的一种光学装置,用于读取存储在光记录介质上的数据,包括:一个半导体衬底,带有在其上形成的一个激光部件和一个光检测器;和,一个光学系统,包含一个设置于所述激光部件照射的激光的光路上的物镜,其中,所述光检测器接收从所述的用激光照射的光记录介质的区域散射来的激光,所述光检测器只检测所述物镜的衍射极限以外的散射光。
按上述本发明的结构,由于光敏二极管的位置布局选择在光学系统的共焦点区域之外,并在光的散射或衍射区域之外,这些光由平面激光发射部件引发,来自被激光照射的区域。这样,来自被照射区域,包含信息信号的散射或衍射光可被探测。
根据本发明的一种条形码读取器,用于读取条形码,包括:一个半导体激光源,用于发射平面光;一个物镜,用于将所述平面光聚焦在条形码上;和,至少一光检测器,其中,所述物镜被定位以接收所述条形码所反射的光和所所散射的光,所述物镜将所述反射光导回所述光源,并且只将所述物镜的衍射极限以外的所述散射光导向所述光检测器。
根据本发明的一种读取条形码的方法,包括:用一个半导体激光源发射平面光;用物镜将所述平面光聚焦在条形码上;用所述物镜接收由所述条形码所散射的光和所反射的光;用所述物镜将所述反射光导回所述光源;用所述物镜只将所述物镜的衍射极限以外的散射光导向至少一个光检测器上;以及,通过检测来自所述衍射极限以外的所述散射光来确定存储在所述条形码上的数据。
附图说明
本发明将由下面的详细描述和附具的示意图中得到充分理解,并且不仅限于本发明。其中:
图1为构成习用的条形码读数器的光学装置的例子的示意图;
图2为光学装置示意图;
图3为本发明的光学装置实施例的构造图;
图4A为本发明的光学装置另一实施例的构造图;
图4B为图4A的光学装置的平面图;
图5A为周边回路的框图;
图5B为周边回路的回路元件布置的构造图;
图6为本发明的光学装置又一实施例的基本部件的构造图。
具体实施方式
本发明中,光学装置具有一由“光学装置”这一发明提出的共焦点光学系统,此发明为本申请人的日本专利申请No.210691/1993(美国专利申请No.294307)。共焦点光学系统包括在一个半导体衬底上一体形成的一光发射部件和一光敏二极管,因此光记录介质和源自光发射部件的激光辐射,放置在聚光镜共焦点上。
下面将详细描述依本发明的光学装置的一个实施例。
图3为依本发明的光学装置的一个实施例的示意图,其中光发射部件2为平面光发射激光器LD,由垂直谐振型的半导体激光器驱动,并且,物镜3设在例如由镓砷制成的半导体衬底1上,这些构成的结构和位置关系分别确定,以使平面光发射激光器LD和要被照射的部位,即作为光学记录介质的条形码B的平面,设置在物镜3的共焦点上。
进而,一光敏二极管等组成的光敏二极管4位于并形成在下述的共焦点区域之外,在包含半导体衬底1的共焦点S的平面上。换言之,平面光发射激光部件和光敏二极管按规定位置关系一体形成于一个半导体衬底上。
来自光发射部件2的辐射激光L由物镜3聚焦,照射在条形码B的表面。
由于激光的照射,条形码的表面产生了反射光Lr和散射-衍射光Ls。
上述类型的光的反射光Lr同时按相同的光路返回,并在衍射的极限内由物镜3聚焦。当物镜3的数值孔径和激光L的一个波长分别由N.A.和λ(mm)表示,衍射的极限fr设置在一个点上,离开光轴1.22λ/N.A.的距离。这样,反射光Lr照射在一共焦点区域内,即包含光发射部件2的共焦点S的平面上。
另一方面,散射-衍射光Ls通过与反射光Lr不同的光路输入到物镜3,照射在上述衍射极限区域之外,即共焦点S的平面内共焦点区域之外。
因此,当光敏二极管4设在共焦点区域以外时,散射-衍射光Ls可被接收,以探测其中包含的信息。
条形码B的模式信号即信息信号主要包含在上述散射-衍射光Ls中,这样,光敏二极管4如上述设置,散射-衍射光Ls被接收以探测其中包含的信号,条形码B的模式信号可被探测。
被探测的模式信号送入模/数转换器,如上述现有技术的例子,以读出信号。
上述实施例中,当光发射部件2由垂直谐振型的半导体激光器LD已经准备时,光发射部件2可由水平谐振型的半导体激光器LD构成,反射镜5反射由从水平方向的垂直方向输出的光,如结构图4A所示意依本发明的光学装置的另一实施例。在此情况下,各个部件的平面布局可如此构成:反射镜5的周边由如图示预设的光敏二极管4围绕,例如图4B为图4A的依本发明的光学装置的平面示意图。
进而,依本发明的光学装置,光发射部件2和光敏二极管4,及构成包含这些部件的回路构成部件可被集成化。图5A为框图,表示由光发射部件2即半导体激光器LD,一个第一回路部份11,和一个第二回路部分12所构成的回路。
第一回路部分11包括上述光敏二极管4,及其相关回路,例如一用于放大来自光敏二极管4的探测信号的放大回路,一探测信号的信号处理回路及其它回路。还有,第二回路部份12包括一检则光敏二极管,接收输出的激光,此激光来自输出激光L的端点的反面,朝着构成光发射部件2的半导体激光器LD上被照射的部分;及其它相关回路,例如一放大回路用于放大来自检测光敏二极管及其它回路的探测信号12,控制半导体激光器的输出。
图5B为局部示意图,表示如上述的回路部分为一体化的光学装置的实施例。此时,一平面激光发射部件LD,包含有光发射部件2,位于半导体衬底1上,以使平面激光发射部件LD引导上述激光离开半导体衬底1的主表面,所以上述第一回路部件11形成于主表面上。特别地,光敏二极管4,即光敏二极管PD与包含上述放大回路,信号处理回路,及其它相关回路的IC集成电路同时形成。一检测光敏二极管4m,用于接收来自激光部件LD的背面输出的光;和一IC回路C2包含有上述放大回路及其它相关回路,则形成于衬底1的主表面的反面。
虽然在上述实施例中,本发明已就用于条形码读数器的光学装置做了描述,但并不局限于所照射的光记录介质为条形码的情况,还适用于另一种光学装置,例如光学采样和以下情形:光记录介质为光具盘,其上有或凹或凸的信息坑;或者为光磁盘,其上的信息由磁光效应读出。
例如,探测这些坑时,光由于坑的深浅不同而产生的衍射被光敏二极管4接收,包含在光中的信号即可被探测。
用磁光效应探测时,即探测由于克耳效应引发的偏振角的旋光度,可用下述方式进行,一检振器15,可分离偏振光,它由线网或其它制成,放置在光敏二极管4上,以分离偏振光;由检振器15接收的光(散射-衍射光)送入偏振光分离器,如图6表示依本发明的光学装置的又一实施例的主要部分。这样,磁~光信号可被探测,换言之,记录的信息即可读出。
依上述本发明,光学装置包括一体地没于一半导体衬底上的一平面光发射激光部件和一光敏二极管,还有一光学系统。进一步,光敏二极管设置在光学系统的共焦点区域之外,并且此区域可获得被照射部分的散射-衍射光。其结果,光学装置接收了散射-衍射光,可探测其中包含的信号,并减少了部件数量,使部件位置的调整简单。
所以可做到光学装置的小型化、集成化,生产成本也得以降低。
结合附图已描述了本发明的最佳实施例,但本发明并不局限于这些实施例,本领域的技术人员在下述的权利要求申明的范围内还可作出各种变化和改进。
Claims (15)
1.一种光学装置,用于读取存储在光记录介质上的数据,包括:
一个半导体衬底,带有在其上形成的一个激光部件和一个光敏二极管;和
一个光学系统,包含一个设置于所述激光部件照射的激光的光路上的物镜,
其中,所述光敏二极管接收从所述的用激光照射的光记录介质的区域散射来的激光,所述光敏二极管只探测所述物镜的衍射极限以外的散射光。
2.如权利要求1所述的光学装置,其特征在于,所述激光部件为一个垂直谐振器。
3.如权利要求1所述的光学装置,其特征在于,所述激光部件为一个水平谐振器。
4.如权利要求1所述的光学装置,其特征在于,所述光敏二极管位于一区域,该区域在源自所述激光部件的激光照射的所述光记录介质的区域的反射光的光轴的1.22λ/N.A.半径以外,其中所述激光部件的波长和所述物镜的数值孔径的数目分别用λ和N.A.表示。
5.如权利要求1所述的光学装置,其特征在于,所述激光部件的控制回路与所述半导体衬底成一体。
6.如权利要求1所述的光学装置,其特征在于,用于来自所述光敏二极管的探测信号的信号处理回路与所述半导体衬底成一体。
7.如权利要求1所述的光学装置,其特征在于,所述光敏二极管配备有用于对偏振光的角分量进行分离的装置。
8.如权利要求1所述的光学装置,其特征在于,所述光记录介质是一种条形码。
9.如权利要求1所述的光学装置,其特征在于,所述光记录介质是一个光盘。
10.一种条形码读取器,用于读取条形码,包括:
一个半导体激光源,用于发射平面光;
一个物镜,用于将所述平面光聚焦在条形码上;和
至少一个光敏二极管,
其中,所述物镜被定位以接收听述条形码所反射的光和所所散射的光,所述物镜将所述反射光导回所述光源,并且只将所述物镜的衍射极限以外的所述散射光导向所述光敏二极管。
11.如权利要求10所述的读数器,其特征在于,所述光源和所述至少一个光敏二极管具有平行的光轴。
12.如权利要求10所述的读数器,其特征在于,所述光源和所述至少一个光敏二极管一体地形成在一个公共半导体衬底上。
13.一种读取条形码的方法,包括:
用一个半导体激光源发射平面光;
用物镜将所述平面光聚焦在条形码上;
用所述物镜接收由所述条形码所散射的光和所反射的光;
用所述物镜将所述反射光导回所述光源;
用所述物镜只将所述物镜的衍射极限以外的散射光导向至少一个光敏二极管上;以及
通过探测来自所述衍射极限以外的所述散射光来确定存储在所述条形码上的数据。
14.如权利要求13所述的方法,其特征在于,还包括将所述光源和所述至少一个光敏二极管设置为具备平行的光轴。
15.如权利要求13所述的方法,其特征在于,还包括将所述光源和所述至少一个光敏二极管一体地形成在一个公共半导体衬底上。
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JP190722/1995 | 1995-07-26 | ||
JP7190722A JPH0945995A (ja) | 1995-07-26 | 1995-07-26 | 光学装置 |
JP190722/95 | 1995-07-26 |
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CN1110000C true CN1110000C (zh) | 2003-05-28 |
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US (1) | US5900619A (zh) |
JP (1) | JPH0945995A (zh) |
KR (1) | KR970007890A (zh) |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6310689B1 (en) * | 1996-08-23 | 2001-10-30 | Asahi Kogaku Kogyo Kabushiki Kaisha | Pattern reading apparatus |
US6668000B2 (en) * | 1999-07-15 | 2003-12-23 | University Of Maryland, Baltimore County | System and method of optically testing multiple edge-emitting semiconductor lasers residing on a common wafer |
JP2001256665A (ja) * | 2000-01-07 | 2001-09-21 | Rohm Co Ltd | 受発光複合素子およびそれを用いた光ピックアップ装置 |
US6912076B2 (en) | 2000-03-17 | 2005-06-28 | Accu-Sort Systems, Inc. | Coplanar camera scanning system |
KR100875137B1 (ko) * | 2002-02-23 | 2008-12-22 | 주식회사 엘지이아이 | 자동 케이블 티브이 밴드 탐색 방법 |
GB0210411D0 (en) * | 2002-05-08 | 2002-06-12 | Zarlink Semiconductor Ab | Photonic device with monitor |
US7274882B2 (en) * | 2002-10-30 | 2007-09-25 | Finisar Corporation | Method and apparatus for monitoring the power level of two or more optical transmitters |
JP2004235190A (ja) * | 2003-01-28 | 2004-08-19 | Sony Corp | 光半導体装置 |
JP2005038586A (ja) * | 2003-06-30 | 2005-02-10 | Semiconductor Energy Lab Co Ltd | 光ピックアップ装置 |
JP5029079B2 (ja) * | 2007-03-15 | 2012-09-19 | 富士ゼロックス株式会社 | 半導体素子および光学装置 |
KR101360294B1 (ko) * | 2008-05-21 | 2014-02-11 | 광주과학기술원 | 반사형 광학 센서장치 |
CN104463069B (zh) * | 2014-12-10 | 2017-09-12 | 福建新大陆电脑股份有限公司 | 带双重激光扫描设备的便携式终端 |
CN111490447A (zh) * | 2020-03-23 | 2020-08-04 | 江苏艾立特半导体科技有限公司 | 一种发射和光敏接收一体封装的激光器 |
CN114624004A (zh) * | 2020-12-11 | 2022-06-14 | 深圳中科飞测科技股份有限公司 | 检测系统、检测方法及检测设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122653A (en) * | 1989-08-22 | 1992-06-16 | Nikon Corporation | Confocal type laser scan microscope with integrated illumination, detection and waveguide system |
WO1995005641A1 (fr) * | 1993-08-17 | 1995-02-23 | Sony Corporation | Dispositif optique pour lecteur de code |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5180909A (en) * | 1990-04-27 | 1993-01-19 | Victor Company Of Japan, Ltd. | Optical pickup using diffracted light |
US5233595A (en) * | 1990-10-24 | 1993-08-03 | Olympus Optical Co., Ltd. | Optical pickup including waveguide light intensity detection means for controlling a position/intensity of a semiconductor laser |
JPH04348084A (ja) * | 1991-02-13 | 1992-12-03 | Ricoh Co Ltd | 光機能素子 |
JP2705326B2 (ja) * | 1991-02-19 | 1998-01-28 | 日本電気株式会社 | 光磁気ヘッド装置 |
EP0548440A1 (en) * | 1991-12-23 | 1993-06-30 | International Business Machines Corporation | Bilithic composite for optoelectronic integration |
US5298735A (en) * | 1992-10-07 | 1994-03-29 | Eastman Kodak Company | Laser diode and photodetector circuit assembly |
JP2932868B2 (ja) * | 1992-11-13 | 1999-08-09 | 日本電気株式会社 | 半導体光集積素子 |
US5349210A (en) * | 1993-02-02 | 1994-09-20 | Motorola, Inc. | Optical reading head with angled array |
JPH07234382A (ja) * | 1994-02-24 | 1995-09-05 | Matsushita Electric Ind Co Ltd | 超解像走査光学装置 |
US5606572A (en) * | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
JPH07296441A (ja) * | 1994-04-28 | 1995-11-10 | Sony Corp | 光学装置 |
-
1995
- 1995-07-26 JP JP7190722A patent/JPH0945995A/ja active Pending
-
1996
- 1996-07-23 US US08/681,480 patent/US5900619A/en not_active Expired - Fee Related
- 1996-07-24 KR KR1019960030039A patent/KR970007890A/ko active IP Right Grant
- 1996-07-26 CN CN96112236A patent/CN1110000C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122653A (en) * | 1989-08-22 | 1992-06-16 | Nikon Corporation | Confocal type laser scan microscope with integrated illumination, detection and waveguide system |
WO1995005641A1 (fr) * | 1993-08-17 | 1995-02-23 | Sony Corporation | Dispositif optique pour lecteur de code |
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CN1142105A (zh) | 1997-02-05 |
US5900619A (en) | 1999-05-04 |
JPH0945995A (ja) | 1997-02-14 |
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