CN110914975B - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

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Publication number
CN110914975B
CN110914975B CN201880046337.2A CN201880046337A CN110914975B CN 110914975 B CN110914975 B CN 110914975B CN 201880046337 A CN201880046337 A CN 201880046337A CN 110914975 B CN110914975 B CN 110914975B
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CN
China
Prior art keywords
power semiconductor
semiconductor module
substrate
metallization
compound
Prior art date
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Active
Application number
CN201880046337.2A
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English (en)
Chinese (zh)
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CN110914975A (zh
Inventor
D.特吕泽尔
S.哈特曼
D.吉永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Co ltd
Original Assignee
ABB Grid Switzerland AG
Hitachi Energy Switzerland AG
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Publication of CN110914975A publication Critical patent/CN110914975A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/17—Containers or parts thereof characterised by their materials
    • H10W76/18—Insulating materials, e.g. resins, glasses or ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611—Bolts or screws

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN201880046337.2A 2017-07-12 2018-07-10 功率半导体模块 Active CN110914975B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17181052 2017-07-12
EP17181052.6 2017-07-12
PCT/EP2018/068604 WO2019011890A1 (en) 2017-07-12 2018-07-10 POWER SEMICONDUCTOR MODULE

Publications (2)

Publication Number Publication Date
CN110914975A CN110914975A (zh) 2020-03-24
CN110914975B true CN110914975B (zh) 2023-08-01

Family

ID=59325238

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880046337.2A Active CN110914975B (zh) 2017-07-12 2018-07-10 功率半导体模块

Country Status (5)

Country Link
US (1) US11362008B2 (https=)
EP (1) EP3649671B1 (https=)
JP (1) JP7221930B2 (https=)
CN (1) CN110914975B (https=)
WO (1) WO2019011890A1 (https=)

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USD929462S1 (en) * 2018-06-04 2021-08-31 Semikron Elektronik Gmbh & Co. Kg Module
USD903590S1 (en) * 2018-09-12 2020-12-01 Cree Fayetteville, Inc. Power module
CN209419498U (zh) * 2019-03-25 2019-09-20 阳光电源股份有限公司 Igbt模块及其导体安装结构、逆变器
USD942403S1 (en) 2019-10-24 2022-02-01 Wolfspeed, Inc. Power module having pin fins
EP3951851A1 (de) * 2020-08-05 2022-02-09 Siemens Aktiengesellschaft Leistungshalbleitermodulsystem und herstellungsverfahren für ein leistungshalbleitermodulsystem
EP4187586A1 (en) 2021-11-24 2023-05-31 Hitachi Energy Switzerland AG Assembly for a power module, power module and method for producing an assembly for a power module
US20230326823A1 (en) * 2022-04-06 2023-10-12 Infineon Technologies Ag Temperature Sensor Arrangement in Semiconductor Module
DE102024201717A1 (de) * 2024-02-26 2025-08-28 Robert Bosch Gesellschaft mit beschränkter Haftung Substrat eines Leistungsmoduls
EP4687170A1 (en) * 2024-07-31 2026-02-04 Hitachi Energy Ltd Power semiconductor module and method for manufacturing a power semiconductor module

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CN101335263A (zh) * 2007-05-18 2008-12-31 富士电机电子技术株式会社 半导体模块和半导体模块的制造方法
JP2014179376A (ja) * 2013-03-13 2014-09-25 Mitsubishi Electric Corp 半導体装置及びその製造方法

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JP3269745B2 (ja) 1995-01-17 2002-04-02 株式会社日立製作所 モジュール型半導体装置
EP0962974B1 (en) * 1998-05-28 2005-01-26 Hitachi, Ltd. Semiconductor device
JP3440824B2 (ja) * 1998-05-28 2003-08-25 株式会社日立製作所 半導体装置
TWI248384B (en) * 2000-06-12 2006-02-01 Hitachi Ltd Electronic device
DE10214953A1 (de) * 2002-04-04 2003-10-30 Infineon Technologies Ag Leistungsmodul mit mindestens zwei Substraten und Verfahren zu seiner Herstellung
US6696644B1 (en) * 2002-08-08 2004-02-24 Texas Instruments Incorporated Polymer-embedded solder bumps for reliable plastic package attachment
JP3740117B2 (ja) 2002-11-13 2006-02-01 三菱電機株式会社 電力用半導体装置
KR101391925B1 (ko) 2007-02-28 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지 및 이를 제조하기 위한 반도체 패키지 금형
US8154114B2 (en) * 2007-08-06 2012-04-10 Infineon Technologies Ag Power semiconductor module
US8018047B2 (en) * 2007-08-06 2011-09-13 Infineon Technologies Ag Power semiconductor module including a multilayer substrate
DE102008029829B4 (de) 2008-06-25 2012-10-11 Danfoss Silicon Power Gmbh Vertikal nach oben kontaktierender Halbleiter und Verfahren zu dessen Herstellung
JP4576448B2 (ja) 2008-07-18 2010-11-10 三菱電機株式会社 電力用半導体装置
US8248809B2 (en) * 2008-08-26 2012-08-21 GM Global Technology Operations LLC Inverter power module with distributed support for direct substrate cooling
JP4607995B2 (ja) 2008-11-28 2011-01-05 三菱電機株式会社 電力用半導体装置
JP4825259B2 (ja) * 2008-11-28 2011-11-30 三菱電機株式会社 電力用半導体モジュール及びその製造方法
JP2011187819A (ja) 2010-03-10 2011-09-22 Mitsubishi Electric Corp 樹脂封止型パワーモジュールおよびその製造方法
WO2013121491A1 (ja) 2012-02-13 2013-08-22 パナソニック株式会社 半導体装置およびその製造方法
JP5859906B2 (ja) * 2012-04-20 2016-02-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
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JP6540324B2 (ja) 2015-07-23 2019-07-10 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
DE102015112451B4 (de) 2015-07-30 2021-02-04 Danfoss Silicon Power Gmbh Leistungshalbleitermodul
WO2017175612A1 (ja) * 2016-04-04 2017-10-12 三菱電機株式会社 パワーモジュール、パワー半導体装置及びパワーモジュール製造方法
US10224268B1 (en) * 2016-11-28 2019-03-05 CoolStar Technology, Inc. Enhanced thermal transfer in a semiconductor structure
EP4401126A3 (en) * 2018-01-30 2024-09-25 Infineon Technologies AG Power semiconductor module and method for producing the same

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
CN101335263A (zh) * 2007-05-18 2008-12-31 富士电机电子技术株式会社 半导体模块和半导体模块的制造方法
JP2014179376A (ja) * 2013-03-13 2014-09-25 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP3649671A1 (en) 2020-05-13
JP2020526930A (ja) 2020-08-31
US11362008B2 (en) 2022-06-14
US20200144140A1 (en) 2020-05-07
JP7221930B2 (ja) 2023-02-14
WO2019011890A1 (en) 2019-01-17
CN110914975A (zh) 2020-03-24
EP3649671B1 (en) 2021-02-17

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