CN110903766B - 抛光料浆组合物 - Google Patents
抛光料浆组合物 Download PDFInfo
- Publication number
- CN110903766B CN110903766B CN201910553905.4A CN201910553905A CN110903766B CN 110903766 B CN110903766 B CN 110903766B CN 201910553905 A CN201910553905 A CN 201910553905A CN 110903766 B CN110903766 B CN 110903766B
- Authority
- CN
- China
- Prior art keywords
- acid
- polishing
- slurry composition
- film
- polished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 168
- 239000002002 slurry Substances 0.000 title claims abstract description 67
- 239000000203 mixture Substances 0.000 title claims abstract description 63
- 239000002245 particle Substances 0.000 claims abstract description 59
- -1 aromatic organic acid Chemical class 0.000 claims abstract description 19
- 239000002270 dispersing agent Substances 0.000 claims abstract description 16
- 239000003381 stabilizer Substances 0.000 claims abstract description 14
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 8
- 239000003607 modifier Substances 0.000 claims abstract description 7
- 229920002873 Polyethylenimine Polymers 0.000 claims description 38
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 14
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 14
- DGMPVYSXXIOGJY-UHFFFAOYSA-N Fusaric acid Chemical compound CCCCC1=CC=C(C(O)=O)N=C1 DGMPVYSXXIOGJY-UHFFFAOYSA-N 0.000 claims description 10
- 150000007524 organic acids Chemical class 0.000 claims description 9
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 8
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000004310 lactic acid Substances 0.000 claims description 7
- 235000014655 lactic acid Nutrition 0.000 claims description 7
- 235000006408 oxalic acid Nutrition 0.000 claims description 7
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 6
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011164 primary particle Substances 0.000 claims description 6
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 5
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 5
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 5
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 5
- 239000001630 malic acid Substances 0.000 claims description 5
- 235000011090 malic acid Nutrition 0.000 claims description 5
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 claims description 5
- 229920000083 poly(allylamine) Polymers 0.000 claims description 5
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 4
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 4
- 239000001361 adipic acid Substances 0.000 claims description 4
- 235000011037 adipic acid Nutrition 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- 239000011976 maleic acid Substances 0.000 claims description 4
- 229960002510 mandelic acid Drugs 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 4
- 229920006254 polymer film Polymers 0.000 claims description 4
- 239000011163 secondary particle Substances 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 claims description 3
- 239000005711 Benzoic acid Substances 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 235000010233 benzoic acid Nutrition 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 claims description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000333 poly(propyleneimine) Polymers 0.000 claims description 3
- 235000019260 propionic acid Nutrition 0.000 claims description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 3
- 229960004889 salicylic acid Drugs 0.000 claims description 3
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 2
- 235000003704 aspartic acid Nutrition 0.000 claims description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 239000001530 fumaric acid Substances 0.000 claims description 2
- 235000011087 fumaric acid Nutrition 0.000 claims description 2
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 claims 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 claims 2
- WJJMNDUMQPNECX-UHFFFAOYSA-N dipicolinic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=N1 WJJMNDUMQPNECX-UHFFFAOYSA-N 0.000 claims 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 claims 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims 2
- KQTIIICEAUMSDG-UHFFFAOYSA-N tricarballylic acid Chemical compound OC(=O)CC(C(O)=O)CC(O)=O KQTIIICEAUMSDG-UHFFFAOYSA-N 0.000 claims 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims 1
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 claims 1
- WLJVXDMOQOGPHL-PPJXEINESA-N 2-phenylacetic acid Chemical compound O[14C](=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-PPJXEINESA-N 0.000 claims 1
- SJZRECIVHVDYJC-UHFFFAOYSA-N 4-hydroxybutyric acid Chemical compound OCCCC(O)=O SJZRECIVHVDYJC-UHFFFAOYSA-N 0.000 claims 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N Acetoacetic acid Natural products CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 claims 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 claims 1
- 239000005639 Lauric acid Substances 0.000 claims 1
- 235000021314 Palmitic acid Nutrition 0.000 claims 1
- 235000021355 Stearic acid Nutrition 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- WOWBFOBYOAGEEA-UHFFFAOYSA-N diafenthiuron Chemical compound CC(C)C1=C(NC(=S)NC(C)(C)C)C(C(C)C)=CC(OC=2C=CC=CC=2)=C1 WOWBFOBYOAGEEA-UHFFFAOYSA-N 0.000 claims 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 claims 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims 1
- 229960002446 octanoic acid Drugs 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- 229940081066 picolinic acid Drugs 0.000 claims 1
- 229940107700 pyruvic acid Drugs 0.000 claims 1
- 239000008117 stearic acid Substances 0.000 claims 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 claims 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 claims 1
- 229940005605 valeric acid Drugs 0.000 claims 1
- 239000010408 film Substances 0.000 description 74
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 44
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 33
- 229910052738 indium Inorganic materials 0.000 description 31
- 239000002253 acid Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 22
- 239000011787 zinc oxide Substances 0.000 description 22
- 239000006185 dispersion Substances 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 229910052809 inorganic oxide Inorganic materials 0.000 description 16
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- KVZLHPXEUGJPAH-UHFFFAOYSA-N 2-oxidanylpropanoic acid Chemical compound CC(O)C(O)=O.CC(O)C(O)=O KVZLHPXEUGJPAH-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000004698 Polyethylene Substances 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 229920000724 poly(L-arginine) polymer Polymers 0.000 description 8
- 229920000573 polyethylene Polymers 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 150000001412 amines Chemical group 0.000 description 5
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 5
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 5
- 229920000729 poly(L-lysine) polymer Polymers 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 108010039918 Polylysine Proteins 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
- WXBLLCUINBKULX-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1.OC(=O)C1=CC=CC=C1 WXBLLCUINBKULX-UHFFFAOYSA-N 0.000 description 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 150000007522 mineralic acids Chemical class 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 229920000075 poly(4-vinylpyridine) Polymers 0.000 description 4
- 108010011110 polyarginine Proteins 0.000 description 4
- 229920002704 polyhistidine Polymers 0.000 description 4
- 229920000656 polylysine Polymers 0.000 description 4
- 229920002714 polyornithine Polymers 0.000 description 4
- 108010055896 polyornithine Proteins 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- STGNLGBPLOVYMA-MAZDBSFSSA-N (E)-but-2-enedioic acid Chemical compound OC(=O)\C=C\C(O)=O.OC(=O)\C=C\C(O)=O STGNLGBPLOVYMA-MAZDBSFSSA-N 0.000 description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YBCVMFKXIKNREZ-UHFFFAOYSA-N acoh acetic acid Chemical compound CC(O)=O.CC(O)=O YBCVMFKXIKNREZ-UHFFFAOYSA-N 0.000 description 3
- OVYQSRKFHNKIBM-UHFFFAOYSA-N butanedioic acid Chemical compound OC(=O)CCC(O)=O.OC(=O)CCC(O)=O OVYQSRKFHNKIBM-UHFFFAOYSA-N 0.000 description 3
- NFMLWRCAFGMYPI-UHFFFAOYSA-N butanedioic acid;2-hydroxypropanoic acid Chemical compound CC(O)C(O)=O.OC(=O)CCC(O)=O NFMLWRCAFGMYPI-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- ZFACJPAPCXRZMQ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O.OC(=O)C1=CC=CC=C1C(O)=O ZFACJPAPCXRZMQ-UHFFFAOYSA-N 0.000 description 3
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 description 3
- AKMJJGSUTRBWGW-UHFFFAOYSA-N pyridine-2-carboxylic acid Chemical compound OC(=O)C1=CC=CC=N1.OC(=O)C1=CC=CC=N1 AKMJJGSUTRBWGW-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- HOZBSSWDEKVXNO-BXRBKJIMSA-N (2s)-2-azanylbutanedioic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O.OC(=O)[C@@H](N)CC(O)=O HOZBSSWDEKVXNO-BXRBKJIMSA-N 0.000 description 2
- WIFSDCDETBPLOR-UHFFFAOYSA-N 2-aminobenzoic acid Chemical compound NC1=CC=CC=C1C(O)=O.NC1=CC=CC=C1C(O)=O WIFSDCDETBPLOR-UHFFFAOYSA-N 0.000 description 2
- CKQDYOOJWXHMRY-UHFFFAOYSA-N 2-hydroxybutanoic acid Chemical compound CCC(O)C(O)=O.CCC(O)C(O)=O CKQDYOOJWXHMRY-UHFFFAOYSA-N 0.000 description 2
- GIEGKXINITVUOO-UHFFFAOYSA-N 2-methylidenebutanedioic acid Chemical compound OC(=O)CC(=C)C(O)=O.OC(=O)CC(=C)C(O)=O GIEGKXINITVUOO-UHFFFAOYSA-N 0.000 description 2
- OORRCVPWRPVJEK-UHFFFAOYSA-N 2-oxidanylethanoic acid Chemical compound OCC(O)=O.OCC(O)=O OORRCVPWRPVJEK-UHFFFAOYSA-N 0.000 description 2
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 description 2
- XTILJCALGBRMPR-UHFFFAOYSA-N 2-phenylacetic acid Chemical compound OC(=O)CC1=CC=CC=C1.OC(=O)CC1=CC=CC=C1 XTILJCALGBRMPR-UHFFFAOYSA-N 0.000 description 2
- VEGNPHHZDYJZQE-UHFFFAOYSA-N 3-dodecylimino-n-propylpropan-1-amine Chemical compound CCCCCCCCCCCCN=CCCNCCC VEGNPHHZDYJZQE-UHFFFAOYSA-N 0.000 description 2
- KBGVGWRTXAAKIO-UHFFFAOYSA-N 3-methylimino-n-propylpropan-1-amine Chemical compound CCCNCCC=NC KBGVGWRTXAAKIO-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- JCJUITKXMXQUPL-UHFFFAOYSA-N C1C(C)O1.CNC Chemical compound C1C(C)O1.CNC JCJUITKXMXQUPL-UHFFFAOYSA-N 0.000 description 2
- 101000589450 Homo sapiens Poly(ADP-ribose) glycohydrolase Proteins 0.000 description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 102100032347 Poly(ADP-ribose) glycohydrolase Human genes 0.000 description 2
- 229920002518 Polyallylamine hydrochloride Polymers 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- WDJUEGKKQSEJRR-UHFFFAOYSA-N butanedioic acid;2-hydroxyacetic acid Chemical compound OCC(O)=O.OC(=O)CCC(O)=O WDJUEGKKQSEJRR-UHFFFAOYSA-N 0.000 description 2
- PASOAYSIZAJOCT-UHFFFAOYSA-N butanoic acid Chemical compound CCCC(O)=O.CCCC(O)=O PASOAYSIZAJOCT-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 2
- 229940077239 chlorous acid Drugs 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- HXDZQFDVMNVIND-UHFFFAOYSA-M dimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]-phenylazanium chloride Chemical compound [Cl-].C[N+](C1=CC=CC=C1)(CCOC(C(=C)C)=O)C HXDZQFDVMNVIND-UHFFFAOYSA-M 0.000 description 2
- WLGSIWNFEGRXDF-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O.CCCCCCCCCCCC(O)=O WLGSIWNFEGRXDF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- XVVLAOSRANDVDB-UHFFFAOYSA-N formic acid Chemical compound OC=O.OC=O XVVLAOSRANDVDB-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- XEUHNWODXVYLFD-UHFFFAOYSA-N heptanedioic acid Chemical compound OC(=O)CCCCCC(O)=O.OC(=O)CCCCCC(O)=O XEUHNWODXVYLFD-UHFFFAOYSA-N 0.000 description 2
- KYYWBEYKBLQSFW-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCC(O)=O KYYWBEYKBLQSFW-UHFFFAOYSA-N 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- CUILPNURFADTPE-UHFFFAOYSA-N hypobromous acid Chemical compound BrO CUILPNURFADTPE-UHFFFAOYSA-N 0.000 description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- KMBPCQSCMCEPMU-UHFFFAOYSA-N n'-(3-aminopropyl)-n'-methylpropane-1,3-diamine Chemical compound NCCCN(C)CCCN KMBPCQSCMCEPMU-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- TWHMVKPVFOOAMY-UHFFFAOYSA-N octanedioic acid Chemical compound OC(=O)CCCCCCC(O)=O.OC(=O)CCCCCCC(O)=O TWHMVKPVFOOAMY-UHFFFAOYSA-N 0.000 description 2
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 2
- YKEKYBOBVREARV-UHFFFAOYSA-N pentanedioic acid Chemical compound OC(=O)CCCC(O)=O.OC(=O)CCCC(O)=O YKEKYBOBVREARV-UHFFFAOYSA-N 0.000 description 2
- HUPQYPMULVBQDL-UHFFFAOYSA-N pentanoic acid Chemical compound CCCCC(O)=O.CCCCC(O)=O HUPQYPMULVBQDL-UHFFFAOYSA-N 0.000 description 2
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 2
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 2
- XMAXUBOLEVIRGX-UHFFFAOYSA-N phosphanium;fluoride Chemical compound [F-].[PH4+] XMAXUBOLEVIRGX-UHFFFAOYSA-N 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 229920000962 poly(amidoamine) Polymers 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- QJWFJOSRSZOLKK-UHFFFAOYSA-N prop-2-enamide Chemical class NC(=O)C=C.NC(=O)C=C QJWFJOSRSZOLKK-UHFFFAOYSA-N 0.000 description 2
- SXBRULKJHUOQCD-UHFFFAOYSA-N propanoic acid Chemical compound CCC(O)=O.CCC(O)=O SXBRULKJHUOQCD-UHFFFAOYSA-N 0.000 description 2
- PUAGMZJCVWMYIV-UHFFFAOYSA-N pyridine-2,3-dicarboxylic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O.OC(=O)C1=CC=CN=C1C(O)=O PUAGMZJCVWMYIV-UHFFFAOYSA-N 0.000 description 2
- OYSBZLVHMPNJMR-UHFFFAOYSA-N pyridine-3-carboxylic acid Chemical compound OC(=O)C1=CC=CN=C1.OC(=O)C1=CC=CN=C1 OYSBZLVHMPNJMR-UHFFFAOYSA-N 0.000 description 2
- AKGNIBXGIPMDLE-UHFFFAOYSA-N pyridine-4-carboxylic acid Chemical compound OC(=O)C1=CC=NC=C1.OC(=O)C1=CC=NC=C1 AKGNIBXGIPMDLE-UHFFFAOYSA-N 0.000 description 2
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 2
- ZTUXEFFFLOVXQE-UHFFFAOYSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCC(O)=O ZTUXEFFFLOVXQE-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RRHXZLALVWBDKH-UHFFFAOYSA-M trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)OCC[N+](C)(C)C RRHXZLALVWBDKH-UHFFFAOYSA-M 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- GLUCVWFGSMGWDI-TYYBGVCCSA-N (e)-but-2-enedioic acid;2-hydroxypropanoic acid Chemical compound CC(O)C(O)=O.OC(=O)\C=C\C(O)=O GLUCVWFGSMGWDI-TYYBGVCCSA-N 0.000 description 1
- KPKNKBMTKJSYQP-BTJKTKAUSA-N (z)-but-2-enedioic acid;2-hydroxybutanedioic acid Chemical compound OC(=O)\C=C/C(O)=O.OC(=O)C(O)CC(O)=O KPKNKBMTKJSYQP-BTJKTKAUSA-N 0.000 description 1
- HBWHSLQSROGCQF-UHFFFAOYSA-N 1,2,2,3,3-pentamethylpiperazine Chemical compound CC1(C(N(CCN1)C)(C)C)C HBWHSLQSROGCQF-UHFFFAOYSA-N 0.000 description 1
- BUAXCDYBNXEWEB-UHFFFAOYSA-N 2-(chloromethyl)oxirane;n-methylmethanamine Chemical compound CNC.ClCC1CO1 BUAXCDYBNXEWEB-UHFFFAOYSA-N 0.000 description 1
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- SZQACQUAVJHTKK-UHFFFAOYSA-N 2-hydroxyacetic acid;octadecanoic acid Chemical compound OCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O SZQACQUAVJHTKK-UHFFFAOYSA-N 0.000 description 1
- VHBSECWYEFJRNV-UHFFFAOYSA-N 2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1O.OC(=O)C1=CC=CC=C1O VHBSECWYEFJRNV-UHFFFAOYSA-N 0.000 description 1
- KBKWDPDPGKEGFS-UHFFFAOYSA-N 2-hydroxybenzoic acid;nitric acid Chemical compound O[N+]([O-])=O.OC(=O)C1=CC=CC=C1O KBKWDPDPGKEGFS-UHFFFAOYSA-N 0.000 description 1
- ONENEQAOZAHNKB-UHFFFAOYSA-N 2-hydroxybutanedioic acid;propanedioic acid Chemical compound OC(=O)CC(O)=O.OC(=O)C(O)CC(O)=O ONENEQAOZAHNKB-UHFFFAOYSA-N 0.000 description 1
- SXQREZRERSGLSN-UHFFFAOYSA-N 2-hydroxypropanoic acid;propanedioic acid Chemical compound CC(O)C(O)=O.OC(=O)CC(O)=O SXQREZRERSGLSN-UHFFFAOYSA-N 0.000 description 1
- QTUOWRHHIFTHCE-UHFFFAOYSA-N 2-methylidenebutanoic acid;prop-2-enoic acid Chemical compound OC(=O)C=C.CCC(=C)C(O)=O QTUOWRHHIFTHCE-UHFFFAOYSA-N 0.000 description 1
- GYZVCMCORBRKLC-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O.OC(=O)C1=CC=CC=C1[N+]([O-])=O GYZVCMCORBRKLC-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- IQIYHRZVDCPVPC-UHFFFAOYSA-N 3-imino-N-propylpropan-1-amine Chemical compound N=CCCNCCC.N=CCCNCCC IQIYHRZVDCPVPC-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- FSEOSJDPSWBXMK-UHFFFAOYSA-N CC(=O)C(O)=O.CCCCCCCCCCCCCCCCCC(O)=O Chemical compound CC(=O)C(O)=O.CCCCCCCCCCCCCCCCCC(O)=O FSEOSJDPSWBXMK-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- DURVUIVACMLXOH-UHFFFAOYSA-N N'-(3-aminopropyl)propane-1,3-diamine Chemical compound NCCCNCCCN.NCCCNCCCN DURVUIVACMLXOH-UHFFFAOYSA-N 0.000 description 1
- GJFCSRZLTNSMFE-UHFFFAOYSA-N NCCCCNCCCN.NCCCC(CCCN)N Chemical compound NCCCCNCCCN.NCCCC(CCCN)N GJFCSRZLTNSMFE-UHFFFAOYSA-N 0.000 description 1
- QCRHMEWSBMETDI-UHFFFAOYSA-N NCCCNCCCN.NCCCC(CCN)N Chemical compound NCCCNCCCN.NCCCC(CCN)N QCRHMEWSBMETDI-UHFFFAOYSA-N 0.000 description 1
- JCFBPRLLELTBNM-UHFFFAOYSA-N OC(=O)C1=CC=CC=N1.OC(=O)C1=CC=CC=N1.OC(=O)C1=CC=CC=N1.OC(=O)C1=CC=CC=N1 Chemical compound OC(=O)C1=CC=CC=N1.OC(=O)C1=CC=CC=N1.OC(=O)C1=CC=CC=N1.OC(=O)C1=CC=CC=N1 JCFBPRLLELTBNM-UHFFFAOYSA-N 0.000 description 1
- CPAYLGQOBADQNW-UHFFFAOYSA-N OC(=O)C1=CC=CN=C1C(O)=O.C1=CC=CC2=NC(C(=O)O)=CC=C21 Chemical compound OC(=O)C1=CC=CN=C1C(O)=O.C1=CC=CC2=NC(C(=O)O)=CC=C21 CPAYLGQOBADQNW-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JDWOZOZARHKBPP-UHFFFAOYSA-N acetic acid;2-oxopropanoic acid Chemical compound CC(O)=O.CC(=O)C(O)=O JDWOZOZARHKBPP-UHFFFAOYSA-N 0.000 description 1
- IYKJEILNJZQJPU-UHFFFAOYSA-N acetic acid;butanedioic acid Chemical compound CC(O)=O.OC(=O)CCC(O)=O IYKJEILNJZQJPU-UHFFFAOYSA-N 0.000 description 1
- SPTSIOTYTJZTOG-UHFFFAOYSA-N acetic acid;octadecanoic acid Chemical compound CC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O SPTSIOTYTJZTOG-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- JRFMZTLWVBLNLM-UHFFFAOYSA-N benzene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1.OC(=O)C1=CC=CC(C(O)=O)=C1 JRFMZTLWVBLNLM-UHFFFAOYSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- MCWUXNVMAKIFNN-UHFFFAOYSA-N butanedioic acid;decanedioic acid Chemical compound OC(=O)CCC(O)=O.OC(=O)CCCCCCCCC(O)=O MCWUXNVMAKIFNN-UHFFFAOYSA-N 0.000 description 1
- ILAJWURWJKXJPW-UHFFFAOYSA-N butanedioic acid;octanedioic acid Chemical compound OC(=O)CCC(O)=O.OC(=O)CCCCCCC(O)=O ILAJWURWJKXJPW-UHFFFAOYSA-N 0.000 description 1
- UZMVRPCCXKIJLB-UHFFFAOYSA-N butanoic acid;octadecanoic acid Chemical compound CCCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O UZMVRPCCXKIJLB-UHFFFAOYSA-N 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- QFKUJYXYUZZKEM-UHFFFAOYSA-N decanedioic acid;2-hydroxyacetic acid Chemical compound OCC(O)=O.OC(=O)CCCCCCCCC(O)=O QFKUJYXYUZZKEM-UHFFFAOYSA-N 0.000 description 1
- FRHIXTCZUDVFFP-UHFFFAOYSA-N decanedioic acid;octadecanoic acid Chemical compound OC(=O)CCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O FRHIXTCZUDVFFP-UHFFFAOYSA-N 0.000 description 1
- NXMUXTAGFPJGTQ-UHFFFAOYSA-N decanoic acid;octanoic acid Chemical compound CCCCCCCC(O)=O.CCCCCCCCCC(O)=O NXMUXTAGFPJGTQ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- YVSCCMNRWFOKDU-UHFFFAOYSA-N hexanedioic acid Chemical compound OC(=O)CCCCC(O)=O.OC(=O)CCCCC(O)=O YVSCCMNRWFOKDU-UHFFFAOYSA-N 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- SRPSOCQMBCNWFR-UHFFFAOYSA-N iodous acid Chemical compound OI=O SRPSOCQMBCNWFR-UHFFFAOYSA-N 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- LVPMIMZXDYBCDF-UHFFFAOYSA-N isocinchomeronic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)N=C1 LVPMIMZXDYBCDF-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- OSZIMKGPGMEZKV-UHFFFAOYSA-N n'-(3-aminopropyl)butane-1,4-diamine Chemical compound NCCCCNCCCN.NCCCCNCCCN OSZIMKGPGMEZKV-UHFFFAOYSA-N 0.000 description 1
- JSSIRAZXLJEWTJ-UHFFFAOYSA-N n,n-dipropyldodecan-1-amine Chemical compound CCCCCCCCCCCCN(CCC)CCC JSSIRAZXLJEWTJ-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- WPBWJEYRHXACLR-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O.OC(=O)CCCCCCCC(O)=O WPBWJEYRHXACLR-UHFFFAOYSA-N 0.000 description 1
- ACXGEQOZKSSXKV-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O.CCCCCCCC(O)=O ACXGEQOZKSSXKV-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- GQFPJDKRBYMMBG-UHFFFAOYSA-N pyridine-2-carboxylic acid pyridine-2,3-dicarboxylic acid Chemical compound N1=C(C=CC=C1)C(=O)O.N1=C(C=CC=C1)C(=O)O.N1=C(C(=CC=C1)C(=O)O)C(=O)O GQFPJDKRBYMMBG-UHFFFAOYSA-N 0.000 description 1
- GJAWHXHKYYXBSV-UHFFFAOYSA-N pyridinedicarboxylic acid Natural products OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- RVEZZJVBDQCTEF-UHFFFAOYSA-N sulfenic acid Chemical compound SO RVEZZJVBDQCTEF-UHFFFAOYSA-N 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- ZWPWUVNMFVVHHE-UHFFFAOYSA-N terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1.OC(=O)C1=CC=C(C(O)=O)C=C1 ZWPWUVNMFVVHHE-UHFFFAOYSA-N 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明涉及一种抛光料浆组合物,包括:抛光粒子;分散剂;稳定剂;以及抛光选择比调节剂;所述分散剂包括含有一个以上的羧基(‑COOH)的芳香族有机酸。
Description
技术领域
本发明涉及用于改善抛光率及分散稳定性的抛光料浆组合物。
背景技术
化学机械研磨(Chemical Mechanical Polishing;CMP)工艺是将包括抛光粒子的料浆放在基板上,并利用安装在抛光装置的抛光垫进行实施的工艺。此时,抛光粒子受到抛光装置的压力机械地研磨表面,包含在料浆组合物的化学成份使基板的表面发生化学反应,从而以化学的方式去除基板的表面部分。通常,能够根据要去除的对象的类型和特性选择多种料浆组合物。
化学机械研磨技术在半导体元件的制造工艺中,是用于层间绝缘膜的平坦化、形成浅槽隔离、形成插塞及填埋金属布线等所必需的工艺。
随着半导体元件的高密度化,多应用能够形成更细微图案的技术,并且随着接触程度的提高与工艺标准的严格,需要对含有多种绝缘膜的半导体基板进行实现高度平坦化的工艺。目前,还没有CMP工艺的抛光料浆组合物能够用于制造包括例如ITO的无机氧化膜的半导体元件的基板,现实中需要对此进行研究。
发明内容
发明所要解决的问题
本发明提供一种抛光料浆组合物,对于抛光对象膜的抛光选择比及分散稳定性优秀,并且能够稳定地维持分散稳定性。
然而,本发明要解决的问题并非受限于上述言及的问题,未言及的其他问题能够通过以下记载由本领域普通技术人员所明确理解。
用于解决问题的技术手段
根据本发明的一实施例,涉及一种抛光料浆组合物,包括:抛光粒子;分散剂;稳定剂;以及抛光选择比调节剂,所述分散剂包括具有一个以上的羧基(-COOH)的芳香族有机酸。
根据本发明的一实施例,所述抛光粒子包括从由金属氧化物;经有机物或无机物涂覆的金属氧化物;以及胶体状态的金属氧化物组成的组中选择的至少任一种。
根据本发明的一实施例,所述金属氧化物包括从由二氧化硅、二氧化铈、氧化锆、氧化铝、二氧化钛、钡二氧化钛、氧化锗、氧化锰及氧化镁组成的组中选择的至少任一种。
根据本发明的一实施例,所述抛光粒子的一次粒子大小是5nm至150nm,所述抛光粒子的二次粒子大小是30nm至300nm。
根据本发明的一实施例,所述分散剂是所述料浆组合物的0.01重量%至5重量%,所述分散剂包括从由苯甲酸(Benzoic acid)、苯乙酸(Phenylacetic acid)、萘甲酸(Naphthoic acid)、扁桃酸(Mandelic acid)、吡啶甲酸(Picolinic acid)、吡啶二甲酸(Dipicolinic acid)、烟碱酸(Nicotinic acid)、烟碱二酸(Dinicotinic acid)、异烟酸(Isonicotinic acid)、喹啉酸(Quinolinic acid)、邻氨基苯甲酸(anthranilic acid)、镰刀菌酸(Fusaric acid)、邻苯二甲酸(Phthalic acid)、间苯二甲酸(Isophthalic acid)、对苯二甲酸(Terephthalic acid)、甲基苯甲酸(Toluic acid)、水杨酸(Salicylic acid)、硝基苯甲酸(nitrobenzoic acid)及吡啶二羧酸(Pyridinedicarboxylic Acid)组成的组中选择的至少任一种。
根据本发明的一实施例,所述稳定剂是所述料浆组合物的0.001重量%至1重量%,所述稳定剂包括从由聚乙烯亚胺(PEI,Polyethyleneimine)、聚丙烯亚胺(polypropyleneimine)、聚乙烯胺(polyvinylamine)、聚烯丙胺(polyallylamine)、聚己二甲铵(polyhexadimethrine)、聚二甲基二烯丙基铵(盐)(polydimethyl diallyl ammonium(salt))、聚(4-乙烯基吡啶)(poly(4-vinylpyridine))、聚鸟氨酸(polyornithine)、聚赖氨酸(polylysine)、聚精氨酸(polyarginine)、聚-L-精氨酸(poly-L-arginine;PARG)、聚组氨酸(polyhistidine)、聚乙烯基咪唑(polyvinyl imidazole)、聚二烯丙基胺(polydiallylamine)、聚甲基二烯丙基胺(polymethyl diallylamine)、二亚乙基三胺(diethylenetriamine)、三亚乙基四胺(triethylenetetramine)、四亚乙基五胺(tetraethylenepentamine)、五亚乙基六胺(pentaethylenehexamine)、聚烯丙基胺盐酸盐(polyallyaminehydrochloride;PAH)、聚(乙烯吡啶)、聚(乙烯咪唑)、多聚-L-赖氨酸(poly-L-lysine;PLL)、聚丙烯酰胺、丙烯酰胺(acrylamide)衍生聚合物、聚季胺(quaternary polyamine)、聚二甲胺(polydimethylamine)、聚二甲基二烯丙基氯化铵(polydiallyldimethyl ammonium chloride)、聚(二甲胺-表氯醇共聚物)、聚(甲基丙烯酰氧乙基三甲基氯化铵)、聚(甲基丙烯酰氧乙基苯基二甲基氯化铵)、聚酰胺-胺(polyamide-amine)、基于二甲胺-环氧丙烷的聚合物(dimethylamine-epihydrin-based polymer)、二氰二胺(dicyandiamide)、双氰胺(Dicyandiaminde)、丙烯酰胺(acrylamide)、丙烯酸二甲氨基乙酯(dimethylaminoethyl acrylate)、丙D-氨基葡萄糖(D-glucosamine)衍生物、亚氨基双丙胺(Imino-bis-propylamine)、甲基亚氨基双丙胺(Methylimino-bis-propylamine)、十二烷基亚胺基双丙胺(Laurylimino-bis-propylamine)、五甲基二乙烯三胺(Pentamethyldiethylenetriamine)、五甲基二丙烯三胺(Pentamethyldipropylenediamine)、氨基丙基-1,3-丙二胺(Aminopropyl-1,3-propylenediamine)、及氨基丙基-1,4-丁二胺(Aminopropyl-1,4-butylenediamine)组成的组中选择的至少一种。
根据本发明的一实施例,所述抛光选择比调节剂是所述料浆组合物的0.001重量%至0.5重量%,所述抛光选择比调节剂包括有机酸、无机酸或两者全部。
根据本发明的一实施例,所述有机酸包括从由庚二酸(pimelic acid)、苹果酸(malic acid)、丙二酸(malonic acid)、马来酸(maleic acid)、乙酸(acetic acid)、己二酸(adipic acid)、草酸(oxalic acid)、琥珀酸(succinic acid)、酒石酸(tartaricacid)、柠檬酸(citric acid)、乳酸(lactic acid)、戊二酸(glutaric acid)、乙醇酸(glycollic acid)、甲酸(formic acid)、富马酸(fumaric acid)、丙酸(propionic acid)、丁酸(butyric acid)、羟基丁酸(hydroxybutyric acid)、天冬氨酸(aspartic acid)、衣康酸(Itaconic Acid)、丙三羧酸(tricarballylic acid)、辛二酸(suberic acid)、癸二酸(sebacic acid)、硬脂酸(stearic acid)、丙酮酸(pyruvic acid)、乙酰乙酸(acetoaceticacid)、乙醛酸(glyoxylic acid)、壬二酸(azelaic acid)、辛酸(caprylic acid)、月桂酸(lauric acid)、肉豆蔻酸(myristic acid)、戊酸(valeric acid)及棕榈酸(palmiticacid)组成的组中选择的至少任一种。
根据本发明的一实施例,所述无机酸包括从由盐酸、硫酸、硝酸、磷酸、高氯酸、溴酸、高氯酸、氢氟酸、碘酸、亚硝酸、过硫酸、亚硫酸、次硫酸、硼酸、碘酸、磷酸、亚磷酸、次磷酸、过磷酸、亚氯酸、次氯酸、高氯酸、亚溴酸、次溴酸、高溴酸、次碘酸、高碘酸、氟化氢、三氟化硼、四氟硼酸及磷氟化氢酸组成的组中选择的至少任一种。
根据本发明的一实施例,所述抛光料浆组合物的pH是1至7,所述抛光料浆组合物的ζ电位是+5mV至+70mV。
根据本发明的一实施例,当利用所述抛光料浆组合物对抛光对象膜及包括氮化膜或者聚合膜的基板进行抛光时,对于氮化膜或聚合膜的抛光对象膜的选择比是10以上。
根据本发明的一实施例,所述抛光料浆组合物用于对包括绝缘膜及无机氧化膜中的至少一种的薄膜进行抛光。
根据本发明的一实施例,所述无机氧化膜包括从由氟掺杂氧化锡(FTO,SnO2:F)、氧化铟锡(ITO,indium tin oxide)、氧化铟锌(IZO,indium zinc oxide)、氧化铟镓锌(IGZO,indium gallium zinc oxide)、Al掺杂ZnO(AZO,Al-doped ZnO)、氧化铝镓锌(AGZO,Aluminum Gallium Zinc Oxide)、Ga掺杂ZnO(GZO,Ga-doped ZnO)、氧化铟锌锡(IZTO,Indium Zinc Tin Oxide)、氧化铟铝锌(IAZO,Indium Aluminum Zinc Oxide)、氧化铟镓锌(IGZO,indium gallium zinc oxide)、氧化铟镓锡(IGTO,Indium Gallium Tin Oxide)、氧化锑锡(ATO,Antimony Tin Oxide)、氧化锌镓(GZO,Gallium Zinc Oxide)、氮化IZO(IZON,IZO Nitride)、SnO2、ZnO、IrOx、RuOx及NiO组成的组中选择的至少任一种
根据本发明的一实施例,所述抛光料浆组合物用于半导体元件、显示器元件或两者全部的抛光工艺。
发明效果
本发明提供一种抛光料浆组合物,在对包括抛光对象膜(例如,无机氧化膜)及抛光停止膜(例如,氮化硅膜)的基板进行抛光时,以高的抛光速度去除抛光对象膜,在去除阶梯差后,通过高的抛光选择比使得在抛光停止膜的抛光速度很低,由此实现抛光自动停止功能。
本发明提供一种抛光料浆组合物,维持分散稳定性,提供对于抛光对象膜的得到提高的抛光速度。
本发明提供一种抛光料浆组合物,能够用于需要进行无机氧化膜(例如,ITO)的平坦化工艺的半导体布线用元件、显示器基板,面板等抛光工艺(例如,CMP)。
具体实施方式
下面,参照具体说明对本发明的实施例进行详细说明。
能够对下面说明的实施例进行多种变更。下面说明的实施例并非用于通过说明的实施形态对发明范围进行限定,对于对于实施例的变更、等同物及其替代物均属于本发明要求的范围
实施例中使用的术语仅用于说明特定实施例,并非用于限定。在内容中没有特别说明的情况下,单数表达包括复数含义。在本说明书中,“包括”或者“具有”等术语用于表达存在说明书中所记载的特征、数字、步骤、操作、构成要素、配件或其组合,并不排除还具有一个或以上的其他特征、数字、步骤、操作、构成要素、配件或其组合,或者附加功能。
在没有其他定义的情况下,包括技术或者科学术语在内的在此使用的全部术语,都具有本领域普通技术人员所理解的通常的含义。通常使用的与词典定义相同的术语,应理解为与相关技术的通常的内容相一致的含义,在本申请中没有明确言及的情况下,不能过度理想化或解释为形式上的含义。
当说明构成要素(element)或层在其他要素或层“上(on)”,或构成要素(element)或层“连接至(connected to)”或“耦合至(coupled to)”其他要素或层时,能够直接接触其他构成要素或层,或与其直接连接或耦合,也能够存在中间构成要素或层(interveningelements and layer)。
本发明涉及一种抛光料浆组合物,根据本发明的一实施例,抛光料浆组合物包括抛光粒子、分散剂、稳定剂及抛光选择比调节剂,余量能够是溶剂。
根据本发明的一实施例,所述抛光粒子能够是所述料浆组合物的0.5重量%至10重量%。当所述抛光粒子在所述料浆组合物中不到0.5重量%时,会发生抛光速度降低的问题;当超过10重量%时,由于过度抛光,可能发生凹陷、刮痕等缺陷。
所述抛光粒子提供高的分散稳定性,促进抛光对象膜,例如ITO等无机氧化膜的氧化,从而易于对无机氧化膜进行抛光,能够在最小化刮痕等缺陷的同时实现高的抛光特性。
所述抛光粒子包括从由金属氧化物;经有机物或无机物涂覆的金属氧化物;及胶体状态的金属氧化物组成的组中选择的至少任一种。所述金属氧化物包括从由二氧化硅、二氧化铈、氧化锆、氧化铝、二氧化钛、钡二氧化钛、氧化锗、氧化锰及氧化镁组成的组中选择的至少任一种。例如,所述抛光粒子能够是分散为带有正电荷的胶体二氧化铈。
能够通过液相法制备所述抛光粒子。液相法是使抛光粒子前驱体在水溶液中发生化学反应,使结晶生长从而获得微粒子的溶胶-凝胶(sol-gel)法,或者是将抛光粒子离子在水溶液中进行沉淀的共沉法,以及在高温高压中形成抛光粒子的水热合成法等。利用液相法制备的抛光粒子得到分散使得抛光粒子的表面带有正电荷。
所述抛光粒子能够是单晶性的。当使用单晶性抛光粒子时,相比多晶性抛光粒子能够减少刮痕,改善凹陷以及抛光后的洗涤性。
所述抛光粒子的形状能够包括从由球形、角形、针形以及板形组成的组中选择的任一种,优选为球形。
所述抛光粒子的一次粒子大小是5nm至150nm,二次粒子大小是30nm至300nm。所述抛光粒子的平均粒径是能够通过扫描电子显微镜分析、BET分析或动态光散射测量的视野范围内的多个粒子粒径的平均值。为确保粒子均匀性,所述一次粒子大小应为150nm以下,不到5nm时会降低抛光率。当所述二次粒子大小不到30nm时,会由于研磨产生过多的小粒子,降低洗涤性,并且,会在用于抛光工艺的基板、晶片等的表面产生过多缺陷;当超过300nm时,会过度抛光而导致难以调节选择比,具有发生凹陷、侵蚀及表面缺陷的可能性。
所述抛光粒子除了单一大小的粒子外,还可以使用包括多分散(multidispersion)形态的粒子分布的混合粒子,例如混合两种具有不同平均粒度的抛光粒子而形成双峰(bimodal)模式的粒子分布,或者混合三种具有不同平均粒度的抛光粒子而形成具有三个峰值的粒度分布。或者混合四种以上的具有不同平均粒度的抛光粒子而形成多分散形态的粒子分布。通过混合相对较大的抛光粒子和相对较小的抛光粒子能够实现更优秀的分散性,能够期待减少晶片表面的刮痕的效果。
所述分散剂能够是所述料浆组合物的0.01重量%至5重量%。当所述分散剂的含量不到0.01重量%时,无法确保粒子的分散性及稳定性;当超过5重量%时,会降低分散稳定性而难以实现抛光性能。
所述分散剂能够用于诱导所述抛光粒子的均匀且稳定的分散,从而提高抛光性能,调节抛光选择比等。
所述分散剂能够包括具有碳元素个数为6至20的芳香环及一个以上的羧基(-COOH)的有机酸。例如,所述有机酸能够是所述芳香环内的碳原子置换为氮原子的,还能够包括硝基、胺基、砜基、磷酸基、烷基、羟基等。更具体地能够包括从由苯甲酸(Benzoicacid)、苯乙酸(Phenylacetic acid)、萘甲酸(Naphthoic acid)、扁桃酸(Mandelic acid)、吡啶甲酸(Picolinic acid)、吡啶二甲酸(Dipicolinic acid)、烟碱酸(Nicotinic acid)、烟碱二酸(Dinicotinic acid)、异烟酸(Isonicotinic acid)、喹啉酸(Quinolinic acid)、邻氨基苯甲酸(anthranilic acid)、镰刀菌酸(Fusaric acid)、邻苯二甲酸(Phthalicacid)、间苯二甲酸(Isophthalic acid)、对苯二甲酸(Terephthalic acid)、甲基苯甲酸(Toluic acid)、水杨酸(Salicylic acid)、硝基苯甲酸(nitrobenzoic acid)及吡啶二羧酸(Pyridinedicarboxylic Acid)组成的组中选择的至少任一种。
所述稳定剂是所述料浆组合物的0.001重量%至1重量%,当所述稳定剂的含量不到0.001重量%时,会降低分散稳定性而无法实现理想的抛光性能;当超过1重量%时,由于投入过量的稳定剂会降低分散稳定性导致发生凝聚,会发生微缺陷及刮痕。
所述稳定剂起到pH缓冲的作用,能够确保粒子分散性及分散稳定性,例如,防止由于为了调节抛光料浆组合物的抛光性能等而使用多种例如抛光选择比调节剂的添加剂时发生的分散稳定性下降问题,提供改善抛光对象膜的抛光速度及抛光停止膜的停止性能的抛光料浆组合物。
所述稳定剂能够是包括至少一个胺基及包括脂肪族碳化氢的具有重复单位的胺基化合物。所述胺基化合物能够是离子性化合物、盐、单体、包括所述单体的聚合物及共聚物等。例如,所述胺基化合物能够包括从由聚乙烯亚胺(PEI,Polyethyleneimine)、聚丙烯亚胺(polypropyleneimine)、聚乙烯胺(polyvinylamine)、聚烯丙胺(polyallylamine)、聚己二甲铵(polyhexadimethrine)、聚二甲基二烯丙基铵(盐)(polydimethyl diallylammonium(salt))、聚(4-乙烯基吡啶)(poly(4-vinylpyridine))、聚鸟氨酸(polyornithine)、聚赖氨酸(polylysine)、聚精氨酸(polyarginine)、聚-L-精氨酸(poly-L-arginine;PARG)、聚组氨酸(polyhistidine)、聚乙烯基咪唑(polyvinyl imidazole)、聚二烯丙基胺(polydiallylamine)、聚甲基二烯丙基胺(polymethyl diallylamine)、二亚乙基三胺(diethylenetriamine)、三亚乙基四胺(triethylenetetramine)、四亚乙基五胺(tetraethylenepentamine)、五亚乙基六胺(pentaethylenehexamine)、聚烯丙基胺盐酸盐(polyallyaminehydrochloride;PAH)、聚(乙烯吡啶)、聚(乙烯咪唑)、多聚-L-赖氨酸(poly-L-lysine;PLL)、聚丙烯酰胺、丙烯酰胺(acrylamide)衍生聚合物、聚季胺(quaternary polyamine)、聚二甲胺(polydimethylamine)、聚二甲基二烯丙基氯化铵(polydiallyldimethyl ammonium chloride)、聚(二甲胺-表氯醇共聚物)、聚(甲基丙烯酰氧乙基三甲基氯化铵)、聚(甲基丙烯酰氧乙基苯基二甲基氯化铵)、聚酰胺-胺(polyamide-amine)、基于二甲胺-环氧丙烷的聚合物(dimethylamine-epihydrin-based polymer)、二氰二胺(dicyandiamide)、双氰胺(Dicyandiaminde)、丙烯酰胺(acrylamide)、丙烯酸二甲氨基乙酯(dimethylaminoethyl acrylate)、丙D-氨基葡萄糖(D-glucosamine)衍生物、亚氨基双丙胺(Imino-bis-propylamine)、甲基亚氨基双丙胺(Methylimino-bis-propylamine)、十二烷基亚胺基双丙胺(Laurylimino-bis-propylamine)、五甲基二乙烯三胺(Pentamethyldiethylenetriamine)、五甲基二丙烯三胺(Pentamethyldipropylenediamine)、氨基丙基-1,3-丙二胺(Aminopropyl-1,3-propylenediamine)、及氨基丙基-1,4-丁二胺(Aminopropyl-1,4-butylenediamine)组成的组中选择的至少一种。
所述抛光选择比调节剂用于提高抛光对象膜的抛光速度,从而调节抛光选择比,能够作为促进抛光对象膜的抛光的蚀刻剂使用。例如,所述抛光选择比调节剂提高抛光对象膜的抛光速度,抑制在抛光停止膜表面的抛光,实现自动抛光停止功能。
所述抛光选择比调节剂是料浆组合物的0.001重量%至0.5重量%,当不到0.001重量%时,难以改善对抛光对象膜的抛光性能以及难以调节选择比;当超过0.5重量%时,会增加由于对抛光对象膜的过度抛光导致的刮痕、微缺陷以及基于抛光对象膜的腐蚀等的缺陷。
所述抛光选择比调节剂能够包括有机酸、无机酸或两者全部。例如,所述有机酸能够是pKa6以下的强酸性有机酸。更具体地,所述有机酸包括从由庚二酸(pimelic acid)、苹果酸(malic acid)、丙二酸(malonic acid)、马来酸(maleic acid)、乙酸(acetic acid)、己二酸(adipic acid)、草酸(oxalic acid)、琥珀酸(succinic acid)、酒石酸(tartaricacid)、柠檬酸(citric acid)、乳酸(lactic acid)、戊二酸(glutaric acid)、乙醇酸(glycollic acid)、甲酸(formic acid)、富马酸(fumaric acid)、丙酸(propionic acid)、丁酸(butyric acid)、羟基丁酸(hydroxybutyric acid)、天冬氨酸(aspartic acid)、衣康酸(Itaconic Acid)、丙三羧酸(tricarballylic acid)、辛二酸(suberic acid)、癸二酸(sebacic acid)、硬脂酸(stearic acid)、丙酮酸(pyruvic acid)、乙酰乙酸(acetoaceticacid)、乙醛酸(glyoxylic acid)、壬二酸(azelaic acid)、辛酸(caprylic acid)、月桂酸(lauric acid)、肉豆蔻酸(myristic acid)、戊酸(valeric acid)及棕榈酸(palmiticacid)组成的组中选择的至少任一种。
所述无机酸包括从由盐酸、硫酸、硝酸、磷酸、高氯酸、溴酸、高氯酸、氢氟酸、碘酸、亚硝酸、过硫酸、亚硫酸、次硫酸、硼酸、碘酸、磷酸、亚磷酸、次磷酸、过磷酸、亚氯酸、次氯酸、高氯酸、亚溴酸、次溴酸、高溴酸、次碘酸、高碘酸、氟化氢、三氟化硼、四氟硼酸及磷氟化氢酸组成的组中选择的至少任一种。
根据本发明的一实施例,所述抛光料浆组合物还能够包括pH调节剂。例如包括从由硝酸、盐酸、磷酸、硫酸、氢氟酸、溴酸、碘酸、甲酸、丙二酸、马来酸、草酸、醋酸、己二酸、柠檬酸、己二酸、乙酸、丙酸、富马酸、油酸、水杨酸、庚二酸、苯甲酸、琥珀酸、邻苯二甲酸、丁酸、戊二酸、谷氨酸、乙醇酸、乳酸、天门冬氨酸、酒石酸、聚丙烯酸、聚丙酸、聚水杨酸、聚苯甲酸、聚丁酸及其盐组成的组中选择的至少任一种的酸性物质及包括从由氨、氨甲基丙醇(ammonium methyl propanol,AMP)、羟化四甲铵(tetra methyl ammonium hydroxide,TMAH)、氢氧化钾、氢氧化钠、氢氧化镁、氢氧化铷、氢氧化铵、氢氧化铯、碳酸氢钠、碳酸钠、咪唑组成的组中选择的至少任一种。所述pH调节剂的添加量是能够调节抛光料浆组合物的pH的量。
根据本发明的抛光料浆组合物的pH,优选地,按照能够根据抛光粒子实现分散稳定性及适当的抛光速度的程度进行调节,所述抛光料浆组合物的pH具有1至7;优选具有1至5的酸性pH范围。
根据本发明的抛光料浆组合物能够是具有正(positive)电荷的料浆组合物,所述料浆组合物的ζ电位在+5mV至+70mV的范围。通过正电荷的抛光粒子,能够维持高的分散稳定性,并且不发生抛光粒子的凝集由此减少微刮痕。
根据本发明的一实施例,所述抛光料浆组合物能够浓缩或稀释(Dilution)使用。
根据本发明的一实施例,所述抛光料浆组合物能够用于半导体元件、显示器元件或两者全部的抛光工艺,例如,用于化学机械研磨(Chemical Mechanical Polishing;CMP)工艺。
所述抛光料浆组合物能够适用于以包括从由绝缘膜及无机氧化膜组成的组中选择的一种以上的薄膜为抛光对象膜的半导体元件及显示器元件的平坦化工艺。例如,采用绝缘膜及无机氧化膜的半导体元件,以及采用无机氧化膜的显示器元件的平坦化工艺。
所述绝缘膜能够包括从由氧化硅膜、氮化硅膜以及多晶硅膜组成的组中选择的至少任一种。
所述无机氧化膜能够包括从由铟(In)、锡(Sn)、硅(Si)、钛(Ti)、钒(V)、钆(Gd)、镓(Ga)、锰(Mn)、铁(Fe)、钴(Co)、铜(Cu)、锌(Zn)、锆(Zr)、铪(Hf)、铝(Al)、铌(Nb)、镍(Ni)、铬(Cr)、钼(Mo)、钽(Ta)、钌(Ru)、钨(W)、锡(Sn)、铝(Al)、锑(Sb)、铱(Ir)及镍(Ni)组成的组中选择的一种以上的氧化物、氮化物或两者全部,能够涂覆有卤素等。例如,能够包括从由氟掺杂氧化锡(FTO,SnO2:F)、氧化铟锡(ITO,indium tin oxide)、氧化铟锌(IZO,indiumzinc oxide)、氧化铟镓锌(IGZO,indium gallium zinc oxide)、Al掺杂ZnO(AZO,Al-dopedZnO)、氧化铝镓锌(AGZO,Aluminum Gallium Zinc Oxide)、Ga掺杂ZnO(GZO,Ga-dopedZnO)、氧化铟锌锡(IZTO,Indium Zinc Tin Oxide)、氧化铟铝锌(IAZO,Indium AluminumZinc Oxide)、氧化铟镓锌(IGZO,indium gallium zinc oxide)、氧化铟镓锡(IGTO,IndiumGallium Tin Oxide)、氧化锑锡(ATO,Antimony Tin Oxide)、氧化锌镓(GZO,Gallium ZincOxide)、氮化IZO(IZON,IZO Nitride)、SnO2、ZnO、IrOx、RuOx及NiO组成的组中选择的至少任一种。
所述半导体元件及显示器元件的平坦化工艺能够适用于上述言及的元素的氮化膜,例如,SiN等的氮化膜、Hf系、Ti系、Ta系氧化物等高介电常数薄膜;硅、非晶硅、SiC、SiGe、Ge、GaN、GaP、GaAs、有机半导体等半导体薄膜;GeSbTe等相变化薄膜;聚酰亚胺系、聚苯并恶唑系、丙烯酸系、环氧系、苯酚系等聚合物树脂薄膜等。
所述显示器元件能够是基板或面板、TFT或有机电致发光显示器元件。
根据本发明的一实施例,所述抛光料浆组合物对于抛光对象膜的抛光速度是以上,优选为以上。抛光停止膜的抛光速度低于抛光对象膜速度,为在以下,优选为在以下进行抛光。例如,当对包括ITO等无机氧化膜与氮化硅膜的基板进行抛光时,能够高速地对ITO薄膜进行抛光,对所述氮化硅膜进行低速抛光从而提供抛光停止膜功能。
根据本发明的一实施例,使用所述抛光料浆组合物进行抛光时,能够选择性地去除抛光对象膜,对于抛光停止膜的抛光对象膜的选择比是10以上,优选为30以上。例如,当对包括ITO等无机氧化膜与氮化硅膜的基板进行抛光时,对于氮化硅膜的无机氧化膜的选择比是30:1(无机氧化膜:氮化膜)以上,当使用本发明的抛光料浆组合物进行抛光时,对无机氧化膜进行高速抛光,提供对于所述氮化膜的得到改善的自动抛光停止功能。
根据本发明的一实施例,利用所述抛光料浆组合物对图案化晶片进行抛光时,不仅对于图案密度小的晶片,图案密度大的晶片也能确保高的抛光率。
下面,参照实施例对本发明进行详细说明。但本发明的技术思想并非限定于此。
实施例1至实施例15
根据表1,一次粒子的平均粒度为60nm(BET测量)的胶体二氧化铈(HC-60,Solvay公司)为4重量%,吡啶甲酸(Picolinic acid)作为分散剂,聚乙烯亚胺(PEI,Polyethyleneimine)作为稳定剂,以及将草酸(Oxalic acid)与超纯水混合作为抛光选择比调节剂,基于表1制备了抛光料浆组合物。
实施例16及实施例17
在所述实施例1中,抛光粒子使用一次粒子的平均粒度为90nm(BET测量)的胶体二氧化铈粒子(HC-90,Solvay公司),除此之外,其他条件相同,按照表1制备了抛光料浆组合物。
【表1】
(1)分散稳定性评价
为对实施例的料浆组合物的分散稳定性进行评价,在0天、第一天分别测量的粒子大小,测量随着时间变化的稳定性。
【表2】
参考表2,实施例1至5及实施例9至实施例17,即使添加起到ITO蚀刻剂作用的草酸,也显示出良好的分散稳定性,实施例6至实施例8由于草酸含量的增加而具有低的分散稳定性。
(2)抛光特性评价
利用实施例的抛光料浆组合物,按照如下的抛光条件对含有ITO膜及SiN膜的基板进行抛光。
[抛光条件]
1.抛光装置:CTS公司AP-300
2.晶片:300mm ITO薄膜Wafer
3.压板压力(platen pressure):4psi
4.主轴转速(spindle speed):100rpm
5.压板转速(platen speed):105rpm
6.流量(flow rate):300ml/min
【表3】
参考表3,实施例1至5及实施例9至实施例17的料浆组合物的对于ITO薄膜的抛光速度得到改善,对于作为抛光停止膜的SiN的抛光速度降低,由此,ITO/SiN抛光选择比得到提高。由于使用起到ITO薄膜的蚀刻剂作用的草酸,ITO薄膜的抛光速度得到改善,通过芳香族有机酸与PEI使得抛光料浆的分散稳定性得到改善,由此增加了ITO薄膜的选择比,提高了对于SiN停止膜的自动停止性能。并且,实施例6至实施例8中,由于料浆的分散稳定性不良,确认到难以表达抛光性能。
由此,本发明的抛光料浆组合物的ITO薄膜的抛光率及ITO/SiN抛光选择比优秀,由此,能够改善对于SiN停止膜的自动抛光停止性能。
综上,对实施例进行了说明,本领域普通技术人员能够基于所述记载进行多种更改与变形。例如,所说明的技术按照与说明的方法不同的顺序执行,和/或所说明的构成要素按照与说明的方法不同的形态进行结合或组合,或者由其他构成要素或者等同物置换或代替,也能得到适当的结果。
由此,其他体现,其他实施例以及权利要求范围的等同物,均属于本发明的权利要求范围。
Claims (6)
1.一种抛光料浆组合物,其特征在于,包括:
抛光粒子;
分散剂;
包括至少一个胺基及包括脂肪族碳化氢的具有重复单位的胺基化合物的稳定剂;以及
抛光选择比调节剂,
所述分散剂包括具有一个以上的羧基(-COOH)的芳香族有机酸,
其中所述抛光粒子包括胶体氧化铈,
其中所述抛光选择比调节剂在所述浆料组合物中的含量大于等于0.04重量%小于0.1重量%,
所述抛光选择比调节剂包含有机酸,所述有机酸包括从由庚二酸、苹果酸、丙二酸、马来酸、己二酸、草酸、琥珀酸、酒石酸、柠檬酸、乳酸、戊二酸、乙醇酸、甲酸、富马酸、丙酸、丁酸、羟基丁酸、天冬氨酸、衣康酸、丙三羧酸、辛二酸、癸二酸、硬脂酸、丙酮酸、乙酰乙酸、乙醛酸、壬二酸、辛酸、月桂酸、肉豆蔻酸、戊酸及棕榈酸组成的组中选择的至少任一种,
其中所述抛光浆料组合物用于抛光ITO,
所述稳定剂是所述料浆组合物的0.001重量%至1重量%,并且所述稳定剂包括从由聚乙烯亚胺、聚丙烯亚胺、聚乙烯胺、聚烯丙胺、聚二烯丙基胺、聚甲基二烯丙基胺、二亚乙基三胺、三亚乙基四胺、四亚乙基五胺和五亚乙基六胺组成的组中选择的至少一种,
所述抛光粒子是所述料浆组合物的0.5重量%至10重量%,所述分散剂是所述料浆组合物的0.01重量%至5重量%,以及
抛光对象膜与氮化膜的选择比为10以上。
2.根据权利要求1所述的抛光料浆组合物,其特征在于,
所述抛光粒子的一次粒子大小是5nm至150nm,
所述抛光粒子的二次粒子大小是30nm至300nm。
3.根据权利要求1所述的抛光料浆组合物,其特征在于,
所述分散剂包括从由苯甲酸、苯乙酸、萘甲酸、扁桃酸、吡啶甲酸、邻氨基苯甲酸、镰刀菌酸、邻苯二甲酸、间苯二甲酸、对苯二甲酸、甲基苯甲酸、水杨酸、硝基苯甲酸及吡啶二羧酸组成的组中选择的至少任一种。
4.根据权利要求1所述的抛光料浆组合物,其特征在于,
所述抛光料浆组合物的pH是1至7,
所述抛光料浆组合物的ζ电位是+5mV至+70mV。
5.根据权利要求1所述的抛光料浆组合物,其特征在于,
当利用所述抛光料浆组合物对抛光对象膜及包括聚合膜的基板进行抛光时,对于聚合膜的抛光对象膜的选择比是10以上。
6.根据权利要求1所述的抛光料浆组合物,其特征在于,
在利用所述抛光料浆组合物对基板进行抛光后,对于抛光对象膜的抛光速度是1000Å/min以上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0111834 | 2018-09-18 | ||
KR1020180111834A KR20200032601A (ko) | 2018-09-18 | 2018-09-18 | 연마용 슬러리 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110903766A CN110903766A (zh) | 2020-03-24 |
CN110903766B true CN110903766B (zh) | 2022-04-19 |
Family
ID=69814541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910553905.4A Active CN110903766B (zh) | 2018-09-18 | 2019-06-25 | 抛光料浆组合物 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6970717B2 (zh) |
KR (1) | KR20200032601A (zh) |
CN (1) | CN110903766B (zh) |
TW (1) | TWI791865B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113004797B (zh) * | 2019-12-19 | 2024-04-12 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
EP4237501A4 (en) * | 2020-10-29 | 2024-04-17 | FUJIFILM Electronic Materials U.S.A, Inc. | POLISHING COMPOSITIONS AND METHODS OF USING THE SAME |
KR20220120864A (ko) * | 2021-02-24 | 2022-08-31 | 에스케이하이닉스 주식회사 | 실리콘 산화막 연마용 cmp 슬러리 조성물 |
KR20230011121A (ko) * | 2021-07-13 | 2023-01-20 | 주식회사 케이씨텍 | 신규한 세륨계 입자 및 이를 포함하는 연마 슬러리 조성물 |
KR20230063182A (ko) * | 2021-11-01 | 2023-05-09 | 주식회사 케이씨텍 | 연마용 슬러리 조성물 |
CN114507478B (zh) * | 2022-02-24 | 2023-05-09 | 北京通美晶体技术股份有限公司 | 一种砷化镓晶片加工用抛光液及其制备方法 |
WO2023203680A1 (ja) * | 2022-04-20 | 2023-10-26 | 株式会社レゾナック | 研磨剤及び研磨方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000344769A (ja) * | 1999-06-04 | 2000-12-12 | Tama Kagaku Kogyo Kk | N−ベンジルキノリン酸イミドの製造方法 |
TW531473B (en) * | 2000-11-24 | 2003-05-11 | Fujimi Inc | Polishing composition and polishing method employing it |
CN1576347A (zh) * | 2003-07-04 | 2005-02-09 | 捷时雅株式会社 | 化学机械研磨用水性分散体及其化学机械研磨方法 |
CN1813038A (zh) * | 2003-06-30 | 2006-08-02 | 卡博特微电子公司 | 化学机械抛光(cmp)贵金属 |
CN1919955A (zh) * | 2005-08-24 | 2007-02-28 | 捷时雅株式会社 | 化学机械研磨用水性分散质、配制该分散质的工具、化学机械研磨方法及半导体装置的制造方法 |
CN101496143A (zh) * | 2006-07-28 | 2009-07-29 | 昭和电工株式会社 | 研磨组合物 |
CN101636465A (zh) * | 2007-01-31 | 2010-01-27 | 高级技术材料公司 | 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化 |
CN106883766A (zh) * | 2015-10-02 | 2017-06-23 | 优备材料有限公司 | 钨抛光浆料和抛光衬底的方法 |
CN108495906A (zh) * | 2016-01-25 | 2018-09-04 | 嘉柏微电子材料股份公司 | 含阳离子型聚合物添加剂的抛光组合物 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
JP2007154176A (ja) * | 2005-11-11 | 2007-06-21 | Hitachi Chem Co Ltd | Ito膜研磨用研磨液及び基板の研磨方法 |
KR101260597B1 (ko) * | 2005-12-27 | 2013-05-06 | 히타치가세이가부시끼가이샤 | 금속용 연마액 및 피연마막의 연마 방법 |
WO2009017095A1 (ja) * | 2007-07-30 | 2009-02-05 | Hitachi Chemical Co., Ltd. | 金属用研磨液及び研磨方法 |
KR20170076191A (ko) * | 2015-12-24 | 2017-07-04 | 주식회사 케이씨텍 | 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물 |
-
2018
- 2018-09-18 KR KR1020180111834A patent/KR20200032601A/ko not_active IP Right Cessation
-
2019
- 2019-06-25 CN CN201910553905.4A patent/CN110903766B/zh active Active
- 2019-07-05 TW TW108123834A patent/TWI791865B/zh active
- 2019-07-31 JP JP2019141344A patent/JP6970717B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000344769A (ja) * | 1999-06-04 | 2000-12-12 | Tama Kagaku Kogyo Kk | N−ベンジルキノリン酸イミドの製造方法 |
TW531473B (en) * | 2000-11-24 | 2003-05-11 | Fujimi Inc | Polishing composition and polishing method employing it |
CN1813038A (zh) * | 2003-06-30 | 2006-08-02 | 卡博特微电子公司 | 化学机械抛光(cmp)贵金属 |
CN1576347A (zh) * | 2003-07-04 | 2005-02-09 | 捷时雅株式会社 | 化学机械研磨用水性分散体及其化学机械研磨方法 |
CN1919955A (zh) * | 2005-08-24 | 2007-02-28 | 捷时雅株式会社 | 化学机械研磨用水性分散质、配制该分散质的工具、化学机械研磨方法及半导体装置的制造方法 |
CN101496143A (zh) * | 2006-07-28 | 2009-07-29 | 昭和电工株式会社 | 研磨组合物 |
CN101636465A (zh) * | 2007-01-31 | 2010-01-27 | 高级技术材料公司 | 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化 |
CN106883766A (zh) * | 2015-10-02 | 2017-06-23 | 优备材料有限公司 | 钨抛光浆料和抛光衬底的方法 |
CN108495906A (zh) * | 2016-01-25 | 2018-09-04 | 嘉柏微电子材料股份公司 | 含阳离子型聚合物添加剂的抛光组合物 |
Also Published As
Publication number | Publication date |
---|---|
KR20200032601A (ko) | 2020-03-26 |
TW202012563A (zh) | 2020-04-01 |
TWI791865B (zh) | 2023-02-11 |
JP6970717B2 (ja) | 2021-11-24 |
JP2020045480A (ja) | 2020-03-26 |
CN110903766A (zh) | 2020-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110903766B (zh) | 抛光料浆组合物 | |
KR102185042B1 (ko) | 연마용 슬러리 조성물 | |
JP5614498B2 (ja) | 非酸化物単結晶基板の研磨方法 | |
CN111492024B (zh) | 用于sti工艺的抛光浆科组合物 | |
TWI780194B (zh) | 研磨液、研磨液套組及研磨方法 | |
WO2012141111A1 (ja) | 研磨剤および研磨方法 | |
TW201313885A (zh) | 研磨劑及研磨方法 | |
WO2014184709A2 (en) | Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid | |
KR101916929B1 (ko) | Sti 공정용 연마 슬러리 조성물 | |
KR20200032602A (ko) | 연마용 슬러리 조성물 | |
JP7236270B2 (ja) | 研磨液組成物 | |
KR20190063988A (ko) | 연마용 슬러리 조성물 | |
US10851266B2 (en) | Slurry composition for polishing and method for polishing semiconductor thin film with steps of a high aspect ratio | |
KR102268208B1 (ko) | 연마용 슬러리 조성물 | |
KR101935965B1 (ko) | Ild 연마 공정용 슬러리 조성물 | |
KR101996663B1 (ko) | 텅스텐막에 대한 산화막의 고선택비 슬러리 조성물 | |
CN116063928A (zh) | 抛光浆料组合物 | |
CN110317538B (zh) | 抛光浆料和通过使用抛光浆料抛光基板的方法 | |
KR20180068426A (ko) | 화학 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법 | |
TW202122523A (zh) | 用於氧化矽和碳摻雜之氧化矽化學機械拋光的組合物及方法 | |
CN114958207B (zh) | 用于对氧化硅膜进行抛光的cmp浆料组合物 | |
CN114867802B (zh) | 用于抛光有机膜的浆料组合物 | |
KR100746917B1 (ko) | 다결정 실리콘 연마용 cmp 슬러리 조성물 | |
KR20190071268A (ko) | Sti 공정용 연마 슬러리 조성물 | |
CN113242891B (zh) | 抛光料浆组合物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Quan Changji Inventor after: Li Xingbiao Inventor after: Zhang Xianzhun Inventor before: Quan Zhangguo Inventor before: Li Xingbiao Inventor before: Zhang Xianzhun |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant |