JP6970717B2 - 研磨用スラリー組成物 - Google Patents

研磨用スラリー組成物 Download PDF

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Publication number
JP6970717B2
JP6970717B2 JP2019141344A JP2019141344A JP6970717B2 JP 6970717 B2 JP6970717 B2 JP 6970717B2 JP 2019141344 A JP2019141344 A JP 2019141344A JP 2019141344 A JP2019141344 A JP 2019141344A JP 6970717 B2 JP6970717 B2 JP 6970717B2
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Japan
Prior art keywords
acid
polishing
slurry composition
poly
film
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JP2019141344A
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English (en)
Japanese (ja)
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JP2020045480A (ja
Inventor
權璋國
李性表
張▲玄▼準
Original Assignee
ケーシーテック カンパニー リミテッド
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Publication of JP2020045480A publication Critical patent/JP2020045480A/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2019141344A 2018-09-18 2019-07-31 研磨用スラリー組成物 Active JP6970717B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180111834A KR20200032601A (ko) 2018-09-18 2018-09-18 연마용 슬러리 조성물
KR10-2018-0111834 2018-09-18

Publications (2)

Publication Number Publication Date
JP2020045480A JP2020045480A (ja) 2020-03-26
JP6970717B2 true JP6970717B2 (ja) 2021-11-24

Family

ID=69814541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019141344A Active JP6970717B2 (ja) 2018-09-18 2019-07-31 研磨用スラリー組成物

Country Status (4)

Country Link
JP (1) JP6970717B2 (zh)
KR (1) KR20200032601A (zh)
CN (1) CN110903766B (zh)
TW (1) TWI791865B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113004797B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
US12024650B2 (en) 2020-10-29 2024-07-02 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using the same
KR20220120864A (ko) * 2021-02-24 2022-08-31 에스케이하이닉스 주식회사 실리콘 산화막 연마용 cmp 슬러리 조성물
KR20230011121A (ko) * 2021-07-13 2023-01-20 주식회사 케이씨텍 신규한 세륨계 입자 및 이를 포함하는 연마 슬러리 조성물
KR20230063182A (ko) * 2021-11-01 2023-05-09 주식회사 케이씨텍 연마용 슬러리 조성물
CN114507478B (zh) * 2022-02-24 2023-05-09 北京通美晶体技术股份有限公司 一种砷化镓晶片加工用抛光液及其制备方法
WO2023203680A1 (ja) * 2022-04-20 2023-10-26 株式会社レゾナック 研磨剤及び研磨方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000344769A (ja) * 1999-06-04 2000-12-12 Tama Kagaku Kogyo Kk Ｎ−ベンジルキノリン酸イミドの製造方法
JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US7160807B2 (en) * 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
TWI291987B (en) * 2003-07-04 2008-01-01 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20070049180A1 (en) * 2005-08-24 2007-03-01 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices
JP2007154176A (ja) * 2005-11-11 2007-06-21 Hitachi Chem Co Ltd Ｉｔｏ膜研磨用研磨液及び基板の研磨方法
JP4952584B2 (ja) * 2005-12-27 2012-06-13 日立化成工業株式会社 金属用研磨液及び被研磨膜の研磨方法
WO2008013226A1 (fr) * 2006-07-28 2008-01-31 Showa Denko K.K. Composition de polissage
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
WO2009017095A1 (ja) * 2007-07-30 2009-02-05 Hitachi Chemical Co., Ltd. 金属用研磨液及び研磨方法
KR101834418B1 (ko) * 2015-10-02 2018-03-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
KR20170076191A (ko) * 2015-12-24 2017-07-04 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
TWI631197B (zh) * 2016-01-25 2018-08-01 卡博特微電子公司 含陽離子聚合物添加劑之拋光組合物

Also Published As

Publication number Publication date
TW202012563A (zh) 2020-04-01
TWI791865B (zh) 2023-02-11
KR20200032601A (ko) 2020-03-26
CN110903766B (zh) 2022-04-19
CN110903766A (zh) 2020-03-24
JP2020045480A (ja) 2020-03-26

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