JP2020045480A - 研磨用スラリー組成物 - Google Patents
研磨用スラリー組成物 Download PDFInfo
- Publication number
- JP2020045480A JP2020045480A JP2019141344A JP2019141344A JP2020045480A JP 2020045480 A JP2020045480 A JP 2020045480A JP 2019141344 A JP2019141344 A JP 2019141344A JP 2019141344 A JP2019141344 A JP 2019141344A JP 2020045480 A JP2020045480 A JP 2020045480A
- Authority
- JP
- Japan
- Prior art keywords
- acid
- polishing
- slurry composition
- film
- polishing slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 158
- 239000002002 slurry Substances 0.000 title claims abstract description 78
- 239000000203 mixture Substances 0.000 title claims abstract description 76
- 239000002245 particle Substances 0.000 claims abstract description 60
- 239000002270 dispersing agent Substances 0.000 claims abstract description 16
- -1 aromatic organic acid Chemical class 0.000 claims abstract description 15
- 239000003381 stabilizer Substances 0.000 claims abstract description 14
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 8
- 239000003607 modifier Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 91
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 60
- 239000002253 acid Substances 0.000 claims description 35
- 239000011787 zinc oxide Substances 0.000 claims description 30
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 24
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 17
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims description 14
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 11
- 229920002873 Polyethylenimine Polymers 0.000 claims description 11
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 10
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims description 10
- 150000007524 organic acids Chemical class 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 9
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 9
- DGMPVYSXXIOGJY-UHFFFAOYSA-N Fusaric acid Chemical compound CCCCC1=CC=C(C(O)=O)N=C1 DGMPVYSXXIOGJY-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- TWBYWOBDOCUKOW-UHFFFAOYSA-N isonicotinic acid Chemical compound OC(=O)C1=CC=NC=C1 TWBYWOBDOCUKOW-UHFFFAOYSA-N 0.000 claims description 8
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 8
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 8
- 229920000724 poly(L-arginine) polymer Polymers 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 8
- KQTIIICEAUMSDG-UHFFFAOYSA-N tricarballylic acid Chemical compound OC(=O)CC(C(O)=O)CC(O)=O KQTIIICEAUMSDG-UHFFFAOYSA-N 0.000 claims description 8
- 239000005639 Lauric acid Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 235000006408 oxalic acid Nutrition 0.000 claims description 7
- 229920000075 poly(4-vinylpyridine) Polymers 0.000 claims description 7
- 229920000729 poly(L-lysine) polymer Polymers 0.000 claims description 7
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 229920002518 Polyallylamine hydrochloride Polymers 0.000 claims description 6
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- WJJMNDUMQPNECX-UHFFFAOYSA-N dipicolinic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=N1 WJJMNDUMQPNECX-UHFFFAOYSA-N 0.000 claims description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- JGJLWPGRMCADHB-UHFFFAOYSA-N hypobromite Chemical compound Br[O-] JGJLWPGRMCADHB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 150000007522 mineralic acids Chemical class 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 6
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 claims description 6
- 229920000333 poly(propyleneimine) Polymers 0.000 claims description 6
- 239000011164 primary particle Substances 0.000 claims description 6
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims description 6
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 5
- 239000001361 adipic acid Substances 0.000 claims description 5
- 235000011037 adipic acid Nutrition 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 5
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 5
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 5
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims description 5
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 5
- 239000011976 maleic acid Substances 0.000 claims description 5
- 229920000371 poly(diallyldimethylammonium chloride) polymer Polymers 0.000 claims description 5
- 229920002704 polyhistidine Polymers 0.000 claims description 5
- 239000011975 tartaric acid Substances 0.000 claims description 5
- 235000002906 tartaric acid Nutrition 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 claims description 4
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 4
- 241001101998 Galium Species 0.000 claims description 4
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 235000021314 Palmitic acid Nutrition 0.000 claims description 4
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- 235000011054 acetic acid Nutrition 0.000 claims description 4
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 4
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 claims description 4
- DKSMCEUSSQTGBK-UHFFFAOYSA-M bromite Chemical compound [O-]Br=O DKSMCEUSSQTGBK-UHFFFAOYSA-M 0.000 claims description 4
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 4
- 235000015165 citric acid Nutrition 0.000 claims description 4
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 claims description 4
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 claims description 4
- 239000004310 lactic acid Substances 0.000 claims description 4
- 235000014655 lactic acid Nutrition 0.000 claims description 4
- 229960002510 mandelic acid Drugs 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims description 4
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 claims description 4
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 4
- 229920000083 poly(allylamine) Polymers 0.000 claims description 4
- 229920000768 polyamine Polymers 0.000 claims description 4
- 108010011110 polyarginine Proteins 0.000 claims description 4
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 claims description 4
- 229960004889 salicylic acid Drugs 0.000 claims description 4
- 239000011163 secondary particle Substances 0.000 claims description 4
- ATHGHQPFGPMSJY-UHFFFAOYSA-N spermidine Chemical compound NCCCCNCCCN ATHGHQPFGPMSJY-UHFFFAOYSA-N 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 claims description 3
- 229910015900 BF3 Inorganic materials 0.000 claims description 3
- 239000005711 Benzoic acid Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 101000589450 Homo sapiens Poly(ADP-ribose) glycohydrolase Proteins 0.000 claims description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 3
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims description 3
- 102100032347 Poly(ADP-ribose) glycohydrolase Human genes 0.000 claims description 3
- 108010039918 Polylysine Proteins 0.000 claims description 3
- 229910019897 RuOx Inorganic materials 0.000 claims description 3
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 235000003704 aspartic acid Nutrition 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 235000010233 benzoic acid Nutrition 0.000 claims description 3
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 3
- ZADPBFCGQRWHPN-UHFFFAOYSA-N boronic acid Chemical compound OBO ZADPBFCGQRWHPN-UHFFFAOYSA-N 0.000 claims description 3
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims description 3
- 229940077239 chlorous acid Drugs 0.000 claims description 3
- MPFLRYZEEAQMLQ-UHFFFAOYSA-N dinicotinic acid Chemical compound OC(=O)C1=CN=CC(C(O)=O)=C1 MPFLRYZEEAQMLQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 claims description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 claims description 3
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 3
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 claims description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 3
- 229940081066 picolinic acid Drugs 0.000 claims description 3
- 229920002401 polyacrylamide Polymers 0.000 claims description 3
- 229920000656 polylysine Polymers 0.000 claims description 3
- 229920002714 polyornithine Polymers 0.000 claims description 3
- 108010055896 polyornithine Proteins 0.000 claims description 3
- AKMJJGSUTRBWGW-UHFFFAOYSA-N pyridine-2-carboxylic acid Chemical compound OC(=O)C1=CC=CC=N1.OC(=O)C1=CC=CC=N1 AKMJJGSUTRBWGW-UHFFFAOYSA-N 0.000 claims description 3
- 229940107700 pyruvic acid Drugs 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- RRHXZLALVWBDKH-UHFFFAOYSA-M trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)OCC[N+](C)(C)C RRHXZLALVWBDKH-UHFFFAOYSA-M 0.000 claims description 3
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 claims description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims description 2
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 claims description 2
- WLJVXDMOQOGPHL-PPJXEINESA-N 2-phenylacetic acid Chemical compound O[14C](=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-PPJXEINESA-N 0.000 claims description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- SJZRECIVHVDYJC-UHFFFAOYSA-N 4-hydroxybutyric acid Chemical compound OCCCC(O)=O SJZRECIVHVDYJC-UHFFFAOYSA-N 0.000 claims description 2
- WDJHALXBUFZDSR-UHFFFAOYSA-N Acetoacetic acid Natural products CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 claims description 2
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 claims description 2
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- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229960003424 phenylacetic acid Drugs 0.000 description 1
- 239000003279 phenylacetic acid Substances 0.000 description 1
- 229920000111 poly(butyric acid) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C09K3/1436—Composite particles, e.g. coated particles
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- C09K3/00—Materials not provided for elsewhere
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- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Microelectronics & Electronic Packaging (AREA)
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
化学的な機械的研磨技術は、半導体素子の製造工程において、層間絶縁膜の平坦化、シャロートレンチ素子分離の形成、プラグ及び埋め立て金属配線の形成などにおいて必須工程である。
本発明の一実施形態により、前記金属酸化物は、シリカ、セリア、ジルコニア、アルミナ、チタニア、チタン酸バリウム、ゲルマニア、酸化マンガン、及びマグネシアからなる群より選択される少なくともいずれか1つを含み得る。
本発明の一実施形態により、前記研磨用スラリー組成物を用いた研磨対象膜及び窒化膜又はポリ膜を含む基板の研磨時に、窒化膜又はポリ膜に対する研磨対象膜の選択比は10以上であり得る。
以下、添付する図面を参照しながら実施形態を詳細に説明する。しかし、実施形態には様々な変更が加えられ、特許出願の権利範囲がこのような実施形態によって制限されたり限定されることはない。実施形態に対する全ての変更、均等物ないし代替物が権利範囲に含まれるものとして理解されなければならない。
本発明の一実施形態により、前記研磨用スラリー組成物は、pH調整剤をさらに含む。例えば、硝酸、塩酸、リン酸、硫酸、フッ化水素酸、臭素酸、ヨウ素酸、ギ酸、マロン酸、マレイン酸、シュウ酸、酢酸、アジピン酸、クエン酸、プロピオン酸、フマル酸、乳酸、サリチル酸、ピメリン酸、安息香酸、コハク酸、フタル酸、酪酸、グルタル酸、グルタミン酸、グリコール酸、アスパラギン酸、酒石酸、ポリアクリル酸、ポリプロピオン酸、ポリサリチル酸、ポリ安息香酸、ポリ酪酸及びその塩からなる群で選択される少なくともいずれか1つを含む酸性物質、及びアンモニア、AMP(ammonium methyl propanol)、TMAH(tetra methyl ammonium hydroxide)、水酸化カリウム、水酸化ナトリウム、水酸化マグネシウム、水酸化ルビジウム、水酸化アンモニウム、水酸化セシウム、炭酸水素ナトリウム、炭酸ナトリウム、イミダゾールからなる群で選択された1種以上を含み得る。前記pH調整剤は、研磨用スラリー組成物のpHを調節する量で添加される。
本発明の一実施形態により、前記研磨スラリー組成物は、濃縮又は希釈して使用することができる。
前記研磨用スラリー組成物は、絶縁膜及び無機酸化膜からなる群で選択された1種以上を含む薄膜を研磨対象膜にする半導体素子及びディスプレイ素子の平坦化工程に適用される。例えば、絶縁膜及び無機酸化膜が適用された半導体素子及び無機酸化膜が適用されたディスプレイ素子の平坦化工程に適用される。
表1に基づいて、1次粒子の平均粒度が60nmサイズ(BET測定)のコロイダルセリア(HC−60、Solvay社)4重量%、分散剤としてピコリン酸(Picolinic acid)、安定化剤としてポリエチレンイミン(PEI、Polyethyleneimine)及び研磨選択比調節剤としてシュウ酸(Oxalic acid)と超純粋を混合し、表1により研磨用スラリー組成物を製造した。
前記実施形態1において、研磨粒子を1次粒子の平均粒度が90nmサイズ(BET測定)のコロイダルセリア粒子(HC−90、Solvay社)を使用したことを除いては同様に、表1により研磨用スラリー組成物を製造した。
実施形態のスラリー組成物の分散安定性を評価するために、0日、1日目に各サイズを測定して軽視安定性を測定した。
実施形態の研磨用スラリー組成物を用いて下記のような研磨条件でITO膜及びSiN膜の含有基板を研磨した。
1.研磨装備:CTS社AP−300
2.ウェハー:300mmITO膜ウェハー
3.プラテン圧力(platen pressure):4psi
4.スピンドルスピード(spindle speed):100rpm
5.プラテンスピード(platen speed):105rpm
6.流量(flow rate):300ml/min
Claims (15)
- 研磨粒子と、
分散剤と、
安定化剤と、
研磨選択比調節剤と、
を含み、
前記分散剤は、1つ以上のカルボキシル基(−COOH)を含む芳香族有機酸を含む、研磨用スラリー組成物。 - 前記研磨粒子は、金属酸化物と、有機物又は無機物にコーティングされた金属酸化物と、コロイダル状態の金属酸化物からなる群より選択される少なくともいずれか1つを含む、請求項1に記載の研磨用スラリー組成物。
- 前記金属酸化物は、シリカ、セリア、ジルコニア、アルミナ、チタニア、チタン酸バリウム、ゲルマニア、酸化マンガン、及びマグネシアからなる群より選択される少なくともいずれか1つを含む、請求項2に記載の研磨用スラリー組成物。
- 前記研磨粒子の1次粒子サイズは、5nm〜150nmであり、
前記研磨粒子の2次粒子サイズは、30nm〜300nmである、請求項1に記載の研磨用スラリー組成物。 - 前記分散剤は、前記スラリー組成物の0.01重量%ないし5重量%として含まれ、
前記分散剤は、安息香酸(Benzoic acid)、フェニル酢酸(Phenylacetic acid)、ナフトエ酸(Naphthoic acid)、マンデル酸(Mandelic acid)、ピコリン酸(Picolinic acid)、ジピコリン酸(Dipicolinic acid)、ニコチン酸(Nicotinic acid)、ジニコチン酸(Dinicotinic acid)、イソニコチン酸(Isonicotinic acid)、キノリン酸(Quinolinic acid)、アントラニル酸(anthranilic acid)、フザリン酸(Fusaric acid)、フタル酸(Phthalic acid)、イソフタル酸(Isophthalic acid)、テレフタル酸(Terephthalic acid)、トルイル酸(Toluic acid)、サリチル酸(Salicylic acid)、ニトロ安息香酸(nitrobenzoic acid)及びピリジンカルボン酸(Pyridinecarboxylic Acid)からなる群で選択される少なくともいずれか1つを含む、請求項1に記載の研磨用スラリー組成物。 - 前記安定化剤は、前記スラリー組成物の0.001重量%ないし1重量%として含まれ、
前記安定化剤は、ポリエチレンイミン(PEI、Polyethyleneimine)、ポリプロピレンイミン(polypropyleneimine)、ポリビニルアミン(polyvinylamine)、ポリアリルアミン(polyallylamine)、ポリヘキサジメトリン(polyhexadimethrine)、ポリジメチルジアリルアンモニウム(polydimethyl diallyl ammonium(salt))、ポリ(4−ビニルピリジン)(poly(4−vinylpyridine))、ポリオルニチン(polyornithine)、ポリリジン(polylysine)、ポリアルギニン(polyarginine)、ポリ−L−アルギニン(poly−L−arginineと、PARG)、ポリヒスチジン(polyhistidine)、ポリビニルイミダゾール(polyvinyl imidazole)、ポリジアリルアミン(polydiallylamine)、ポリメチルジアリルアミン(polymethyl diallylamine)、ジエチレントリアミン(diethylenetriamine)、トリエチレンテトラミン(triethylenetetramine)、テトラエチレンペンタミン(tetraethylenepentamine)、ペンタエチレンヘキサミン(pentaethylenehexamine)、ポリアリルアミン塩酸塩(polyallyaminehydrochloride、PAH)、ポリ(ビニルピリジン)、ポリ(ビニルイミダゾール)、ポリ−L−リシン(poly−L−lysine、PLL)、ポリアクリルアミド、アクリルアミド(acrylamide)誘導重合体、4次ポリアミン(quaternary polyamine)、ポリジメチルアミン(polydimethylamine)、ポリジアリルジメチル塩化アンモニウム(polydiallyldimethyl ammonium chloride)、ポリ(ジメチルアミンco−エピクロロヒドリン)、ポリ(メタクリロイルオキシエチルトリメチルアンモニウムクロリド)、ポリ(メタクリロイルオキシエチルジメチルベンジアンモニウムクロリド)、ポリアミドアミン(polyamide−amine)、ジフェニルアミン−エピヒドリン基盤ポリマー(dimethylamine−epihydrin−based polymer)、ジシアンジアミド(dicyandiamide)、ジシアンジアミンド(Dicyandiaminde)、アクリルアミド(acrylamide)、ジメチルアミノエチルアクリレート(dimethylaminoethyl acrylate)、D−グルコサミン(D−glucosamine)誘導体、イミノビスプロピルアミン(Imino−bis−propylamine)、メチルイミノビスプロピルアミン(Methylimino−bis−propylamine)、ドデシルイミノビスプロピルアミン(Laurylimino−bis−propylamine)、ペンタメチルジエチレントリアミン(Pentamethyldiethylenetriamine)、ペンタメチルジプロピレンジアミン(Pentamethyldipropylenediamine)、アミノプロピル−1、3−プロピレンジアミン(Aminopropyl−1、3−propylenediamine)、及びアミノプロピル−1、4−ブチレンジアミン(Aminopropyl−1、4−butylenediamine)からなる群で選択される少なくともいずれか1つを含む、請求項1に記載の研磨用スラリー組成物。 - 前記研磨選択比調節剤は、前記スラリー組成物の0.001重量%ないし0.5重量%として含まれ、
前記研磨選択比調節剤は、有機酸、無機酸、又はその2つを含む、請求項1に記載の研磨用スラリー組成物。 - 前記有機酸は、ピメリン酸(pimelic acid)、リンゴ酸(malic acid)、マロン酸(malonic acid)、マレイン酸(maleic acid)、酢酸(acetic acid)、アジピン酸(adipic acid)、シュウ酸(oxalic acid)、コハク酸(succinic acid)、酒石酸(tartaric acid)、クエン酸(citric acid)、乳酸(lactic acid)、グルタル酸(glutaric acid)、グリコール酸(glycollic acid)、ギ酸(formic acid)、フマル酸(fumaric acid)、プロピオン酸(propionic acid)、酪酸(butyric acid)、ヒドロキシ酪酸(hydroxybutyric acid)、アスパラギン酸(aspartic acid)、イタコン酸(Itaconic Acid)、トリカルバリル酸(tricarballylic acid)、スベリン酸(suberic acid)、セバシン酸(sebacic acid)、ステアリン酸(stearic acid)、ピルビン酸(pyruvic acid)、アセト酢酸(acetoacetic acid)、グリオキシル酸(glyoxylic acid)、アゼライン酸(azelaic acid)、カプリル酸(caprylic acid)、ラウリン酸(lauric acid)、ミリスチン(myristic acid)、吉草酸(valeric acid)及びパルミチン酸(palmitic acid)からなる群で選択される少なくともいずれか1つを含む、請求項7に記載の研磨用スラリー組成物。
- 前記無機酸は、塩酸、硫酸、硝酸、リン酸、過塩素酸、臭素酸、フッ化水素酸、ヨウ素酸、亜硝酸、過硫酸、亜硫酸、次亜硫酸、ボロン酸、亜リン酸、次亜リン酸、過リン酸、亜塩素酸、次亜塩素酸、亜臭素酸、次亜臭素酸、過臭素酸、次亜ヨウ素酸、過ヨウ素酸、フッ化水素、3フッ化ホウ素、テトラフルオロホウ酸及びリンフッ化水素酸からなる群で選択される少なくともいずれか1つを含む、請求項7に記載の研磨用スラリー組成物。
- 前記研磨用スラリー組成物のpHが1〜7であり、
前記研磨用スラリー組成物は、+5mV〜+70mVのジェッタ電位を有する、請求項1に記載の研磨用スラリー組成物。 - 前記研磨用スラリー組成物を用いた研磨対象膜及び窒化膜又はポリ膜を含む基板の研磨時に、窒化膜又はポリ膜に対する研磨対象膜の選択比は10以上である、請求項1に記載の研磨用スラリー組成物。
- 前記研磨用スラリー組成物を用いた基板の研磨後、研磨対象膜に対する研磨速度は1000Å/min以上である、請求項1に記載の研磨用スラリー組成物。
- 前記研磨用スラリー組成物は、絶縁膜及び無機酸化膜のうち少なくとも1つを含む薄膜の研磨に適用される、請求項1に記載の研磨用スラリー組成物。
- 前記無機酸化膜は、FTO(fluorine doped tin oxide、SnO2:F)、ITO(indium tin oxide)、IZO(indium zinc oxide)、IGZO(indium gallium zinc oxide)、AZO(Al−doped ZnO)、AGZO(Aluminum Gallium Zinc Oxide)、GZO(Ga−doped ZnO)、IZTO(Indium Zinc Tin Oxide)、IAZO(Indium Aluminum Zinc Oxide)、IGZO(Indium Gallium Zinc Oxide)、IGTO(Indium Gallium Tin Oxide)、ATO(Antimony Tin Oxide)、GZO(Gallium Zinc Oxide)、IZON(IZO Nitride)、SnO2、ZnO、IrOx、及びRuOxからなる群で選択される少なくともいずれか1つを含む、請求項13に記載の研磨用スラリー組成物。
- 前記研磨用スラリー組成物は、半導体素子、ディスプレイ素子、又は両方の研磨工程に適用される、請求項1に記載の研磨用スラリー組成物。
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CN113004797A (zh) * | 2019-12-19 | 2021-06-22 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
WO2023203680A1 (ja) * | 2022-04-20 | 2023-10-26 | 株式会社レゾナック | 研磨剤及び研磨方法 |
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CN116438267A (zh) * | 2020-10-29 | 2023-07-14 | 富士胶片电子材料美国有限公司 | 研磨组成物及其使用方法 |
KR20220120864A (ko) * | 2021-02-24 | 2022-08-31 | 에스케이하이닉스 주식회사 | 실리콘 산화막 연마용 cmp 슬러리 조성물 |
KR20230011121A (ko) * | 2021-07-13 | 2023-01-20 | 주식회사 케이씨텍 | 신규한 세륨계 입자 및 이를 포함하는 연마 슬러리 조성물 |
KR20230063182A (ko) * | 2021-11-01 | 2023-05-09 | 주식회사 케이씨텍 | 연마용 슬러리 조성물 |
CN114507478B (zh) * | 2022-02-24 | 2023-05-09 | 北京通美晶体技术股份有限公司 | 一种砷化镓晶片加工用抛光液及其制备方法 |
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CN110903766A (zh) | 2020-03-24 |
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CN110903766B (zh) | 2022-04-19 |
JP6970717B2 (ja) | 2021-11-24 |
TW202012563A (zh) | 2020-04-01 |
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