CN110880479B - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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CN110880479B
CN110880479B CN201910766972.4A CN201910766972A CN110880479B CN 110880479 B CN110880479 B CN 110880479B CN 201910766972 A CN201910766972 A CN 201910766972A CN 110880479 B CN110880479 B CN 110880479B
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wafer
polyester
sheet
chips
frame
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CN110880479A (zh
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原田成规
松泽稔
木内逸人
淀良彰
荒川太朗
上里昌充
河村慧美子
藤井祐介
宫井俊辉
大前卷子
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Disco Corp
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Abstract

提供晶片的加工方法，不降低品质而形成器件芯片。该晶片的加工方法将在由分割预定线划分的正面的各区域内形成有多个器件的晶片分割成各个器件芯片，其中，该晶片的加工方法具有如下的工序：聚酯系片配设工序，将晶片定位于具有对晶片进行收纳的开口的框架的该开口内，将聚酯系片配设在晶片的背面和框架的外周上；一体化工序，对该聚酯系片进行加热，通过热压接使晶片与该框架借助该聚酯系片而一体化；分割工序，使用以能够旋转的方式具有切削刀具的切削装置，沿着分割预定线对该晶片进行切削而将该晶片分割成各个器件芯片；以及拾取工序，对该聚酯系片赋予超声波，将器件芯片上推而拾取该器件芯片。

Description

晶片的加工方法
技术领域
本发明涉及晶片的加工方法，将由分割预定线划分而在正面的各区域内形成有多个器件的晶片分割成各个器件。
背景技术
在用于移动电话或个人计算机等电子设备的器件芯片的制造工序中，首先在由半导体等材料构成的晶片的正面上设定多条交叉的分割预定线(间隔道)。并且，在由该分割预定线划分的各区域内形成IC(Integrated Circuit：集成电路)、LSI(Large-scaleIntegration circuit：大规模集成电路)等器件。
然后，将在具有开口的环状的框架上按照封住该开口的方式粘贴的被称为划片带的粘接带粘贴于该晶片的背面上，形成晶片、粘接带以及环状的框架成为一体的框架单元。并且，当沿着该分割预定线对框架单元所包含的晶片进行加工而分割时，形成各个器件芯片。
在晶片的分割中例如使用切削装置。切削装置具有隔着粘接带而对晶片进行保持的卡盘工作台、对晶片进行切削的切削单元等。切削单元具有：切削刀具，其具有圆环状的磨具部；以及主轴，其穿过该切削刀具的中央的贯通孔，使切削刀具旋转。
在对晶片进行切削时，将框架单元载置于卡盘工作台上，隔着粘接带而将晶片保持于卡盘工作台上，通过使主轴旋转而使切削刀具旋转，使切削单元下降至规定的高度位置。然后，使卡盘工作台和切削单元沿着与卡盘工作台的上表面平行的方向相对移动，通过切削刀具沿着分割预定线对晶片进行切削。于是，对晶片进行分割。
然后，将框架单元从切削装置搬出，实施对粘接带照射紫外线等处理而使粘接带的粘接力降低，并对器件芯片进行拾取。作为器件芯片的生产效率较高的加工装置，已知有能够利用一个装置连续地实施晶片的分割和对粘接带的紫外线照射的切削装置(参照专利文献1)。从粘接带上拾取的器件芯片被安装于规定的布线基板等。
专利文献1：日本特许第3076179号公报
粘接带包含基材层和配设在该基材层上的糊料层。在切削装置中，为了可靠地对晶片进行分割，按照使切削刀具的下端到达比晶片的下表面低的位置的方式将切削单元定位于规定的高度。因此，对晶片进行切削的切削刀具也对粘接带的糊料层进行切削。因此，在晶片的切削时，产生源自于晶片的切削屑以及源自于糊料层的切削屑。
在晶片的切削时，对晶片及切削刀具提供切削液，但因切削而产生的该切削屑被取入该切削液而在晶片的正面上扩展。这里，源自于糊料层的切削屑容易再次附着于器件的正面上，并且也不容易利用之后的晶片的清洗工序等去除。因此，当附着有源自于糊料层的切削屑时，器件芯片的品质降低成为问题。
发明内容
本发明是鉴于该问题点而完成的，其目的在于提供晶片的加工方法，切削屑不附着于器件的正面上，抑制器件芯片的品质降低。
根据本发明的一个方式，提供晶片的加工方法，将在由分割预定线划分的正面的各区域内形成有多个器件的晶片分割成各个器件芯片，其特征在于，该晶片的加工方法具有如下的工序：聚酯系片配设工序，将晶片定位于具有对晶片进行收纳的开口的框架的该开口内，将聚酯系片配设在该晶片的背面和该框架的外周上；一体化工序，对该聚酯系片进行加热，通过热压接使该晶片和该框架借助该聚酯系片而一体化；分割工序，使用以能够旋转的方式具有切削刀具的切削装置，沿着分割预定线对该晶片进行切削而将该晶片分割成各个器件芯片；以及拾取工序，在该聚酯系片的与各器件芯片对应的各个区域中，对该聚酯系片赋予超声波，从该聚酯系片侧将该器件芯片上推，从该聚酯系片拾取该器件芯片。
优选在该一体化工序中，通过红外线的照射来实施该热压接。
另外，优选在该一体化工序中，在实施了一体化之后，将从该框架的外周探出的聚酯系片去除。
另外，优选在该拾取工序中，对该聚酯系片进行扩展而使各器件芯片之间的间隔扩展。
另外，优选该聚酯系片是聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意片。
另外，优选在该一体化工序中，在该聚酯系片为该聚对苯二甲酸乙二醇酯片的情况下，加热温度为250℃～270℃，在该聚酯系片为该聚萘二甲酸乙二醇酯片的情况下，加热温度为160℃～180℃。
另外，优选该晶片由Si、GaN、GaAs、玻璃中的任意材料构成。
在本发明的一个方式的晶片的加工方法中，在形成框架单元时，不使用具有糊料层的粘接带，而是使用不具有糊料层的聚酯系片使框架和晶片一体化。借助聚酯系片而使框架和晶片一体化的一体化工序通过热压接来实现。
在实施了一体化工序之后，通过切削刀具对晶片进行切削而将晶片分割成各个器件芯片。然后，在聚酯系片的与各器件芯片对应的各个区域中，对该聚酯系片赋予超声波，从该聚酯系片侧将该器件芯片上推，从聚酯系片拾取器件芯片。所拾取的器件芯片分别安装于规定的安装对象。另外，当在拾取时对聚酯系片赋予超声波时，聚酯系片的剥离变得容易，因此能够减轻施加至器件芯片的负荷。
在对晶片进行切削时，切削刀具也切入至晶片下的聚酯系片，因此产生源自于聚酯系片的切削屑。但是，聚酯系片不具有糊料层，因此即使该切削屑被取入切削水而在晶片的正面上扩散，该切削屑也不附着于晶片，也可经由之后的清洗工序等更可靠地去除。
即，根据本发明的一个方式，通过热压接能够形成使用了不具有糊料层的聚酯系片的框架单元，在晶片的切削时，不产生粘接力较高的切削屑，从而抑制该切削屑所导致的器件芯片的品质降低。
因此，根据本发明的一个方式，提供晶片的加工方法，切削屑不附着于器件的正面上，抑制器件芯片的品质降低。
附图说明
图1是示意性示出晶片的立体图。
图2是示意性示出将晶片和框架定位于卡盘工作台的保持面上的情况的立体图。
图3是示意性示出聚酯系片配设工序的立体图。
图4是示意性示出一体化工序的一例的立体图。
图5是示意性示出一体化工序的一例的立体图。
图6是示意性示出一体化工序的一例的立体图。
图7的(A)是示意性示出将聚酯系片切断的情况的立体图，图7的(B)是示意性示出所形成的框架单元的立体图。
图8是示意性示出分割工序的立体图。
图9是示意性示出向拾取装置搬入框架单元的立体图。
图10的(A)是示意性示出固定于框架支承台上的框架单元的剖视图，图10的(B)是示意性示出拾取工序的剖视图。
标号说明
1：晶片；1a：正面；1b：背面；3：分割预定线；3a：切削痕；5：器件；7：框架；7a：开口；9：聚酯系片；9a：切断痕；11：框架单元；2：卡盘工作台；2a：保持面；2b、40a：吸引源；2c、40b：切换部；4：热风枪；4a：热风；6：加热辊；8：红外线灯；8a：红外线；10：切割器；12：切削装置；14：切削单元；16：主轴壳体；18：切削刀具；20：切削水提供喷嘴；22：拾取装置；24：鼓；26：框架保持单元；28：夹具；30：框架支承台；32：杆；34：气缸；36：基座；38：上推机构；38a：超声波振子；40：筒夹。
具体实施方式
参照附图，对本发明的一个方式的实施方式进行说明。首先，对利用本实施方式的加工方法进行加工的晶片进行说明。图1是示意性示出晶片1的立体图。晶片1例如是由Si(硅)、SiC(碳化硅)、GaN(氮化镓)、GaAs(砷化镓)或其他半导体等材料或者蓝宝石、玻璃、石英等材料构成的大致圆板状的基板等。
晶片1的正面1a由呈格子状排列的多条分割预定线3划分。另外，在晶片1的正面1a的由分割预定线3划分出的各区域内形成有IC(Integrated Circuit：集成电路)或LED(Light Emitting Diode：发光二极管)等器件5。在本实施方式的晶片1的加工方法中，将晶片1沿着分割预定线3进行切削而分割，从而形成各个器件芯片。
晶片1利用切削装置进行切削。在将晶片1搬入至该切削装置之前，对晶片1、聚酯系片以及框架进行一体化而形成框架单元。晶片1按照框架单元的状态被搬入至切削装置而进行切削。所形成的各个器件芯片支承于聚酯系片。然后，对聚酯系片进行扩展，从而将器件芯片之间的间隔扩展，通过拾取装置拾取器件芯片。
环状的框架7(参照图2等)例如由金属等材料形成，该框架7具有直径比晶片1的直径大的开口7a。在形成框架单元时，将晶片1定位于框架7的开口7a内，并收纳于开口7a。
聚酯系片9(参照图3等)是具有柔软性的树脂系片，正面和背面平坦。并且，聚酯系片9具有比框架7的外径大的直径，不具有糊料层。聚酯系片9是将二羧酸(具有两个羧基的化合物)和二醇(具有两个羟基的化合物)作为单体而合成的聚合物的片，例如是聚对苯二甲酸乙二醇酯片或聚萘二甲酸乙二醇酯片等对可见光透明或半透明的片。但是，聚酯系片9不限于此，也可以是不透明的。
聚酯系片9不具有粘接性，因此在室温下无法粘贴于晶片1和框架7。但是，聚酯系片9具有热塑性，因此当在一边施加规定的压力一边使聚酯系片9与晶片1和框架7接合的状态下加热至熔点附近的温度时，聚酯系片9局部发生熔融而能够粘接于晶片1和框架7。因此，在本实施方式的晶片1的加工方法中，通过上述那样的热压接对晶片1、框架7以及聚酯系片9进行一体化而形成框架单元。
接着，对本实施方式的晶片1的加工方法的各工序进行说明。首先，为了进行使晶片1、聚酯系片9以及框架7一体化的准备而实施聚酯系片配设工序。图2是示意性示出将晶片1和框架7定位于卡盘工作台2的保持面2a上的情况的立体图。如图2所示，在上部具有保持面2a的卡盘工作台2上实施聚酯系片配设工序。
卡盘工作台2在上部中央具有直径比框架7的外径大的多孔质部件。该多孔质部件的上表面作为卡盘工作台2的保持面2a。卡盘工作台2如图3所示在内部具有一端与该多孔质部件连通的排气路，在该排气路的另一端侧配设有吸引源2b。在排气路上配设有对连通状态和切断状态进行切换的切换部2c，当切换部2c处于连通状态时，对载置于保持面2a的被保持物作用由吸引源2b产生的负压，从而将被保持物吸引保持于卡盘工作台2。
在聚酯系片配设工序中，首先如图2所示，在卡盘工作台2的保持面2a上载置晶片1和框架7。此时，使晶片1的正面1a侧朝向下方而将晶片1定位于框架7的开口7a内。接着，在晶片1的背面1b和框架7的外周配设聚酯系片9。图3是示意性示出聚酯系片配设工序的立体图。如图3所示，按照覆盖晶片1和框架7的方式在这两者上配设聚酯系片9。
另外，在聚酯系片配设工序中，使用直径比卡盘工作台2的保持面2a大的聚酯系片9。这是因为，当在之后实施的一体化工序中使卡盘工作台2的负压作用于聚酯系片9时，若未通过聚酯系片9覆盖整个保持面2a，则负压会从间隙泄漏，无法对聚酯系片9适当地施加压力。
在本实施方式的晶片1的加工方法中，接着实施一体化工序，对聚酯系片9进行加热并通过热压接使晶片1和该框架7借助该聚酯系片9而一体化。图4是示意性示出一体化工序的一例的立体图。在图4中，用虚线表示能够透过对可见光透明或半透明的聚酯系片9而视认的部件。
在一体化工序中，首先使卡盘工作台2的切换部2c进行动作而成为连通状态，使吸引源2b与卡盘工作台2的上部的多孔质部件连接，将吸引源2b的负压作用于聚酯系片9。于是，通过大气压将聚酯系片9紧贴于晶片1和框架7。
接着，一边通过吸引源2b对聚酯系片9进行吸引一边对聚酯系片9进行加热而实施热压接。聚酯系片9的加热例如如图4所示那样通过配设在卡盘工作台2的上方的热风枪4来实施。
热风枪4在内部具有电热线等加热单元以及风扇等送风机构，能够对空气进行加热而喷射。一边将负压作用于聚酯系片9一边通过热风枪4从上表面对聚酯系片9提供热风4a，当将聚酯系片9加热至规定的温度时，将聚酯系片9热压接在晶片1和框架7上。
另外，聚酯系片9的加热也可以通过其他方法来实施，例如通过利用加热至规定的温度的部件从上方对晶片1和框架7进行按压来实施。图5是示意性示出一体化工序的另一例的立体图。在图5中，用虚线表示能够透过对可见光透明或半透明的聚酯系片9而视认的部件。
在图5所示的一体化工序中，例如使用在内部具有热源的加热辊6。在图5所示的一体化工序中，也是首先将吸引源2b的负压作用于聚酯系片9，通过大气压将聚酯系片9紧贴于晶片1和框架7。
然后，将加热辊6加热至规定的温度并将该加热辊6载置于卡盘工作台2的保持面2a的一端。然后，使加热辊6旋转而使加热辊6在卡盘工作台2上从该一端转动至另一端。于是，将聚酯系片9热压接在晶片1和框架7上。此时，当通过加热辊6在下压聚酯系片9的方向上施加力时，利用比大气压大的压力实施热压接。另外，优选用氟树脂包覆加热辊6的表面。
另外，也可以使用在内部具有热源且具有扁平的底板的熨斗状的按压部件代替加热辊6而实施聚酯系片9的热压接。在该情况下，将该按压部件加热至规定的温度而成为热板，利用该按压部件从上方对卡盘工作台2所保持的聚酯系片9进行按压。
聚酯系片9的加热还可以通过其他方法来实施。图6是示意性示出一体化工序的又一例的立体图。在图6中，用虚线表示能够透过对可见光透明或半透明的聚酯系片9而视认的部件。在图6所示的一体化工序中，使用配设在卡盘工作台2的上方的红外线灯8对聚酯系片9进行加热。红外线灯8至少能够照射聚酯系片9的材料具有吸收性的波长的红外线8a。
在图6所示的一体化工序中，也是首先将吸引源2b的负压作用于聚酯系片9，使聚酯系片9紧贴于晶片1和框架7。接着，使红外线灯8进行动作，对聚酯系片9照射红外线8a而对聚酯系片9进行加热。于是，将聚酯系片9热压接在晶片1和框架7上。
当通过任意的方法将聚酯系片9加热至其熔点附近的温度时，将聚酯系片9热压接在晶片1和框架7上。在对聚酯系片9进行了热压接之后，使切换部2c进行动作而将卡盘工作台2的多孔质部件与吸引源2b切断，解除卡盘工作台2的吸附。
接着，将从框架7的外周探出的聚酯系片9切断而去除。图7的(A)是示意性示出将聚酯系片9切断的情况的立体图。为了进行切断，如图7的(A)所示，使用圆环状的切割器10。该切割器10具有贯通孔，能够绕穿过该贯通孔的旋转轴旋转。
首先，将圆环状的切割器10定位于框架7的上方。此时，使切割器10的旋转轴与卡盘工作台2的径向对齐。接着，使切割器10下降，利用框架7和切割器10夹入聚酯系片9而将聚酯系片9切断。于是，在聚酯系片9上形成有切断痕9a。
另外，使切割器10沿着框架7在框架7的开口7a的周围绕一周，通过切断痕9a围绕聚酯系片9的规定的区域。然后，按照残留聚酯系片9的该区域的方式将切断痕9a的外周侧的区域的聚酯系片9去除。于是，能够将包含从框架7的外周探出的区域在内的聚酯系片9的不需要的部分去除。
另外，为了进行聚酯系片的切断可以使用超声波切割器，可以将使上述的圆环状的切割器10按照超声波频带的频率振动的振动源与该切割器10连接。另外，在将聚酯系片9切断时，为了使切断容易，可以对该聚酯系片9进行冷却而使其硬化。如上所述，形成晶片1和框架7借助聚酯系片9而一体化的框架单元11。图7的(B)是示意性示出所形成的框架单元11的立体图。
另外，在实施热压接时，聚酯系片9优选被加热至其熔点以下的温度。这是因为，当加热温度超过熔点时，有时聚酯系片9发生熔融而无法维持片的形状。另外，聚酯系片9优选被加热至其软化点以上的温度。这是因为，若加热温度未达到软化点，则无法适当地实施热压接。即，聚酯系片9优选被加热至其软化点以上且其熔点以下的温度。
另外，还存在一部分的聚酯系片9不具有明确的软化点的情况。因此，在实施热压接时，聚酯系片9优选被加热至比其熔点低20℃的温度以上且其熔点以下的温度。
另外，例如在聚酯系片9为聚对苯二甲酸乙二醇酯片的情况下，加热温度为250℃～270℃。另外，在该聚酯系片9为聚萘二甲酸乙二醇酯片的情况下，加热温度为160℃～180℃。
这里，加热温度是指实施一体化工序时的聚酯系片9的温度。例如，在热风枪4、加热辊6、红外线灯8等热源中，实际使用能够设定输出温度的机型，但即使使用该热源对聚酯系片9进行加热，有时聚酯系片9的温度也达不到所设定的该输出温度。因此，为了将聚酯系片9加热至规定的温度，可以将热源的输出温度设定得高于聚酯系片9的熔点。
接着，在本实施方式的晶片1的加工方法中，实施分割工序，利用切削刀具对成为框架单元11的状态的晶片1进行切削而分割。分割工序例如利用图8所示的切削装置来实施。图8是示意性示出分割工序的立体图。
切削装置12具有：对被加工物进行切削的切削单元14；以及对被加工物进行保持的卡盘工作台(未图示)。切削单元14具有：切削刀具18，其具有圆环状的磨具部；以及主轴(未图示)，其前端侧穿过该切削刀具18的中央的贯通孔，使切削刀具18旋转。切削刀具18例如具有：环状基台，其在中央具有该贯通孔；以及环状的磨具部，其配设于该环状基台的外周部。
该主轴的基端侧与收纳于主轴壳体16的内部的主轴电动机(未图示)连接，当使主轴电动机进行动作时，能够使切削刀具18旋转。
当通过切削刀具18对被加工物进行切削时，由于切削刀具18与被加工物的摩擦而产生热。另外，当对被加工物进行切削时，从被加工物产生切削屑。因此，为了将由于切削而产生的热和切削屑去除，在对被加工物进行切削的期间，对切削刀具18和被加工物提供纯水等切削水。切削单元14例如在切削刀具18的侧方具有对切削刀具18等提供切削水的切削水提供喷嘴20。
在对晶片1进行切削时，将框架单元11载置于卡盘工作台上，从而隔着聚酯系片9而将晶片1保持于卡盘工作台。然后，使卡盘工作台旋转，使晶片1的分割预定线3与切削装置12的加工进给方向对齐。另外，按照将切削刀具18配设在分割预定线3的延长线的上方的方式，调整卡盘工作台和切削单元14的相对位置。
接着，通过使主轴旋转而使切削刀具18旋转。然后，使切削单元14下降至规定的高度位置，使卡盘工作台和切削单元14沿着与卡盘工作台的上表面平行的方向相对移动。于是，旋转的切削刀具18的磨具部与晶片1接触而对晶片1进行切削，在晶片1和聚酯系片9上形成沿着分割预定线3的切削痕3a。
在沿着一条分割预定线3实施了切削之后，使卡盘工作台和切削单元14在与加工进给方向垂直的分度进给方向上移动，沿着其他分割预定线3同样地实施晶片1的切削。在沿着沿一个方向的所有分割预定线3实施了切削之后，使卡盘工作台绕与保持面垂直的轴旋转，同样地沿着沿另一方向的分割预定线3对晶片1进行切削。当沿着晶片1的所有分割预定线3对晶片1进行切削时，分割步骤完成。
切削装置12可以在切削单元14的附近具有清洗单元(未图示)。通过切削单元14切削后的晶片1可以搬送至该清洗单元而通过该清洗单元进行清洗。例如，清洗单元具有：对框架单元11进行保持的清洗工作台；以及能够在框架单元11的上方往复移动的清洗水提供喷嘴。
当一边使清洗工作台绕与保持面垂直的轴旋转并从清洗水提供喷嘴对晶片1提供纯水等清洗液一边使清洗水提供喷嘴在通过该保持面的中央的上方的路径上往复移动时，能够对晶片1的正面1a侧进行清洗。
当实施分割步骤时，晶片1被分割成各个器件芯片。所形成的器件芯片被支承于聚酯系片9。在对晶片1进行切削时，为了可靠地对晶片1进行分割，按照使切削刀具18的下端的高度位置成为比晶片1的背面1b低的高度位置的方式将切削单元14定位于规定的高度。因此，当对晶片1进行切削时，聚酯系片9也被切削，产生源自于聚酯系片9的切削屑。
在框架单元11中未使用聚酯系片9而使用粘接带的情况下，产生源自于粘接带的糊料层的切削屑。在该情况下，该切削屑被取入从切削水提供喷嘴20喷射的切削水中而在晶片1的正面1a上扩散。源自于糊料层的切削屑容易再次附着于器件5的正面上，并且也不容易利用切削后所实施的晶片1的清洗工序等去除。当附着有源自于糊料层的切削屑时，所形成的器件芯片的品质降低成为问题。
与此相对，在本实施方式的晶片1的加工方法中，在框架单元11中未使用具有糊料层的粘接带，而是使用不具有糊料层的聚酯系片9。即使产生源自于聚酯系片9的切削屑并被取入切削水而在晶片的正面上扩散，该切削屑也不附着于晶片1，也可以在之后的清洗工序等中更可靠地去除。因此，可抑制该切削屑所导致的器件芯片的品质降低。
在本实施方式的晶片1的加工方法中，接着实施拾取工序，从聚酯系片9拾取各个该器件芯片。在拾取工序中，使用在图9下部所示的拾取装置22。图9是示意性示出向拾取装置22搬入框架单元11的立体图。
拾取装置22具有：圆筒状的鼓24，其具有比晶片1的直径大的直径；以及框架保持单元26，其包含框架支承台30。框架保持单元26的框架支承台30具有直径比该鼓24的直径大的开口，配置在与该鼓24的上端部同样的高度，从外周侧围绕该鼓24的上端部。
在框架支承台30的外周侧配设有夹具28。当将框架单元11载置于框架支承台30上并通过夹具28对框架单元11的框架7进行把持时，将框架单元11固定于框架支承台30。
框架支承台30通过沿着铅垂方向延伸的多个杆32进行支承，在各杆32的下端部配设有使该杆32升降的气缸34。多个气缸34支承于圆板状的基座36。当使各气缸34进行动作时，框架支承台30相对于鼓24降低。
在鼓24的内部配设有从下方将聚酯系片9所支承的器件芯片上推的上推机构38。上推机构38例如在上端具有超声波振子38a，该超声波振子38a由锆钛酸铅(PZT)、钛酸钡、钛酸铅等压电陶瓷或水晶振子等构成。另外，在鼓24的上方配设有能够对器件芯片进行吸引保持的筒夹40(参照图10的(B))。上推机构38和筒夹40能够在沿着框架支承台30的上表面的水平方向上移动。另外，筒夹40经由切换部40b(参照图10的(B))而与吸引源40a(参照图10的(B))连接。
在拾取工序中，首先按照使拾取装置22的鼓24的上端的高度与框架支承台30的上表面的高度一致的方式，使气缸34进行动作而调整框架支承台30的高度。接着，将从切削装置12搬出的框架单元11载置于拾取装置22的鼓24和框架支承台30上。
然后，通过夹具28将框架单元11的框架7固定于框架支承台30上。图10的(A)是示意性示出固定于框架支承台30上的框架单元11的剖视图。在晶片1上通过分割步骤形成有切削痕3a而能够进行分割。
接着，使气缸34进行动作而使框架保持单元26的框架支承台30相对于鼓24下降。于是，如图10的(B)所示，聚酯系片9向外周方向扩展。图10的(B)是示意性示出拾取工序的剖视图。
当聚酯系片9向外周方向扩展时，聚酯系片9所支承的各器件芯片1c之间的间隔被扩展。于是，器件芯片1c彼此不容易接触，各个器件芯片1c的拾取变得容易。然后，确定作为拾取对象的器件芯片1c，使上推机构38移动至该器件芯片1c的下方，使筒夹40移动至该器件芯片1c的上方。
然后，使超声波振子38a进行动作而产生超声波频带的频率的振动，使超声波振子38a接触聚酯系片9的与该器件芯片1c对应的区域而对该区域赋予超声波。另外，使上推机构38进行动作而从聚酯系片9侧将该器件芯片1c上推。然后，使切换部40b进行动作而使筒夹40与吸引源40a连通。于是，通过筒夹40对该器件芯片1c进行吸引保持，将器件芯片1c从聚酯系片9拾取。所拾取的各个器件芯片1c在之后安装于规定的布线基板等而进行使用。
另外，当通过超声波振子38a对聚酯系片9的该区域赋予超声波时，聚酯系片9的剥离变得容易。因此，能够减轻从聚酯系片9的剥离时施加至器件芯片的负荷。
如以上所说明的那样，根据本实施方式的晶片的加工方法，不使用粘接带而能够形成包含晶片1的框架单元11。因此，即使对晶片1进行切削，也不产生源自于粘接带的糊料层的切削屑，该切削屑也不会附着于器件芯片1c。因此，不会使器件芯片1c的品质降低。
另外，本发明不限于上述实施方式的记载，可以进行各种变更并实施。例如在上述实施方式中，对聚酯系片9例如是聚对苯二甲酸乙二醇酯片或聚萘二甲酸乙二醇酯片的情况进行了说明，但本发明的一个方式不限于此。例如，聚酯系片可以使用其他材料，可以是聚对苯二甲酸丙二醇酯片、聚对苯二甲酸丁二醇酯片、聚萘二甲酸丁二醇酯等。
除此以外，上述实施方式的构造、方法等只要不脱离本发明的目的的范围，则可以适当变更并实施。

Claims (7)

1.一种晶片的加工方法，将在由分割预定线划分的正面的各区域内形成有多个器件的晶片分割成各个器件芯片，其特征在于，
该晶片的加工方法具有如下的工序：
聚酯系片配设工序，将晶片定位于具有对晶片进行收纳的开口的框架的该开口内，将不具有糊料层的聚酯系片配设在该晶片的背面和该框架的外周上；
一体化工序，对该聚酯系片进行加热，通过热压接使该晶片和该框架借助该聚酯系片而一体化；
分割工序，使用以能够旋转的方式具有切削刀具的切削装置，沿着分割预定线对该晶片进行切削而将该晶片分割成各个器件芯片；以及
拾取工序，在该聚酯系片的与各器件芯片对应的各个区域中，对该聚酯系片赋予超声波，从该聚酯系片侧将该器件芯片上推，从该聚酯系片拾取该器件芯片。
2.根据权利要求1所述的晶片的加工方法，其特征在于，
在该一体化工序中，通过红外线的照射来实施该热压接。
3.根据权利要求1所述的晶片的加工方法，其特征在于，
在该一体化工序中，在实施了一体化之后，将从该框架的外周探出的聚酯系片去除。
4.根据权利要求1所述的晶片的加工方法，其特征在于，
在该拾取工序中，对该聚酯系片进行扩展而使各器件芯片之间的间隔扩展。
5.根据权利要求1所述的晶片的加工方法，其特征在于，
该聚酯系片是聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意片。
6.根据权利要求5所述的晶片的加工方法，其特征在于，
在该一体化工序中，在该聚酯系片为该聚对苯二甲酸乙二醇酯片的情况下，加热温度为250℃～270℃，在该聚酯系片为该聚萘二甲酸乙二醇酯片的情况下，加热温度为160℃～180℃。
7.根据权利要求1所述的晶片的加工方法，其特征在于，
该晶片由Si、GaN、GaAs、玻璃中的任意材料构成。
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