CN110875221A - 切片加工用制剂和加工处理液 - Google Patents

切片加工用制剂和加工处理液 Download PDF

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CN110875221A
CN110875221A CN201910813115.5A CN201910813115A CN110875221A CN 110875221 A CN110875221 A CN 110875221A CN 201910813115 A CN201910813115 A CN 201910813115A CN 110875221 A CN110875221 A CN 110875221A
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只野刚
广濑昌史
阿久津悠太
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Abstract

本发明课题在于有效地去除在切片步骤中由晶片产生的切片屑、由切片胶带的粘合剂层产生的粘合剂的微细片。解决课题的手段是:切片加工用制剂,其在纯水中含有聚合度为200~400且皂化度为75~85摩尔%的部分皂化聚乙烯醇1.0~1.5质量%、和聚氧亚乙基与聚氧亚丙基的聚合数比为75:25~85:15且数均分子量为10000~20000的聚氧亚乙基聚氧亚丙基二醇醚0.4~0.6质量%。该切片加工用制剂纯水稀释至1万~10万倍而制成加工处理液,在切片加工处理步骤中对切片刀片喷洒使用。

Description

切片加工用制剂和加工处理液
技术领域
本发明涉及在进行切片(dicing)处理时使用的加工用制剂和加工处理液,所述切片处理中,将在晶片上形成的大量芯片状的器件通过切片刀片进行切分。
背景技术
以硅或蓝宝石等化合物作为基板的LSI、CMOS、功率器件等带有图案的晶片中,各器件通过划片道(street)而分隔从而大量形成。作为将通过这样的划片道而在纵横方向上被分隔而分离的器件在划片道处进行分割而单片化为制成单个器件时的方法,主要有使刀片高速旋转从而切片的方法、照射激光而切断的方法。
通过切片刀片而进行切片的情况下,需要在晶片与旋转的切片刀片之间流动加工处理液,将切断部位进行冷却,同时还减少切断时的摩擦阻抗,从而顺利地进行切片,并且冲洗因切片而产生的切屑从而去除。
作为针对如上所述的问题的应对法,最初使用纯水作为加工处理液。其后,为了进一步提高其效果,研究了各种各样的方法。例如,已知处理液,其在重均分子量为40000~160000、包含50质量%以上的乙烯基吡咯烷酮、与乙烯基乙酸酯等含乙烯的单体形成的聚合物中含有发泡剂。(专利文献1)
这样的处理液中,与使用纯水的情况相比,发现能够更高效率地去除将晶片制成细片而产生的切片屑,但除此之外的物质仍然附着并残留在器件上,存在无法完全去除的物质。
最初尚不明确这样的现象的起因,但进行各种研究后发现了如下事实。
将晶片切片的情况下,晶片贴附于粘合性树脂片材(切片胶带),进一步将该切片胶带固定在晶片框架上进行切片处理。进行该切片处理时,切片刀片沿着划片道而切断为各器件,但该切片刀片的刀刃以略微进入贴附晶片的切片胶带的粘合剂层的方式进行切断。此时切片刀片的刀刃带起粘合剂层的粘合剂,以微细片的形式分散,发现这样的微细片有时附着在器件的表面上。
特别地,照相机中使用的照相元件(图像传感器)中,在器件(芯片)的表面的透镜上即使少量附着如上所述的切片屑、粘合剂的微细片,作为元件的性能降低,成为不良率上升的主要原因,因此期望用于避免这样的附着的进一步改良。
现有技术文献
专利文献
专利文献1:日本专利第5253765号公报。
发明内容
发明所要解决的课题
如上所述,期望能够有效地去除不仅在切片步骤中由晶片产生的切片屑、还有认为与此相比造成更负面影响的由切片胶带的粘合剂层产生的粘合剂的微细片的切片加工用制剂和加工用处理液,希望得到这样的物质。
此外,切片加工中,在施加大量纯水的同时进行,因此需要大量的纯水而非常耗费成本,进一步因过量用水而有时存在对本地居民的生活用水造成影响的担忧。
用于解决问题的手段
本发明中,制成了切片加工用制剂,其在纯水中含有聚合度为200~400且皂化度为75~85摩尔%的部分皂化聚乙烯醇1.0~1.5质量%、和聚氧亚乙基与聚氧亚丙基的聚合数比为75:25~85:15且数均分子量为10000~20000的聚氧亚乙基聚氧亚丙基二醇醚0.4~0.6质量%。
此外,该加工用制剂中,可以进一步含有0.1质量%左右的苯基乙二醇。
这样的切片加工用制剂通常用纯水稀释至1万~10万倍而制成加工处理液,在切片加工处理步骤中对切片刀片进行切片的部分喷洒使用。
发明的效果
根据本发明,在对半导体等晶片进行切片加工时,能够将从切片胶带的粘合剂层中被切片刀片带起的粘合剂的微细片通过加工液而与切片屑一起冲洗,因此芯片的不良减少,可以期待收率的提高。
此外,本切片加工用制剂即使稀释至高倍率也充分得到效果,因此在切片加工后能够将已使用的加工处理液排放至处理水再生设备而不需要耗费过度负担、程序。其结果是,能够高效率地进行再生处理水的其它步骤等中的再利用、废水处理。
具体实施方式
作为本发明的切片加工用制剂的成分,使用聚乙烯醇。
该聚乙烯醇中,乙烯醇的聚合度为200~400左右、优选为250~350左右、更优选为280~320左右。
此外,该聚乙烯醇是被部分皂化的部分皂化聚乙烯醇,其皂化度为70~90摩尔%左右、优选为75~85摩尔%左右、更优选为78~82摩尔%左右为佳。
与上述部分皂化聚乙烯醇一起,使用聚氧亚乙基聚氧亚丙基二醇醚。
该聚氧亚乙基聚氧亚丙基二醇醚是聚氧亚乙基与聚氧亚丙基二醇的共聚物,其聚合数比为75:25~85:15左右、优选为80:20~83:17左右为佳。
并且,其数均分子量为10000~20000左右、优选为13000~18000左右、更优选为14000~16000左右为佳。
如果在纯水中含有上述部分皂化聚乙烯醇1.0~1.5质量%、和聚氧亚乙基聚氧亚丙基二醇醚0.4~0.6质量%,则两者在纯水中达到良好溶解的状态,得到切片加工用制剂。
将这样的切片加工用制剂用于切片装置,此时,进一步以通过纯水高度稀释至1万~10万倍的状态的加工处理液形式使用。
该经稀释的处理液被连续地供给至通过切片刀片而对晶片进行切片的部分,以冲洗的方式去除因切片而产生的切片屑和切片胶带的粘合剂的微细片,同时还防止伴随切片刀片的摩擦而导致的晶片的局部温度上升。
该切片加工用制剂中,可以进一步作为防腐剂而使用0.1质量%左右的苯基乙二醇,根据需要,可以适当使用其他pH调节剂等。
实施例
(实施例1)
作为部分皂化聚乙烯醇,使用乙烯醇的聚合度为300、皂化度为80摩尔%、数均分子量16000的物质。
作为聚氧亚乙基聚氧亚丙基二醇醚,使用聚氧亚乙基二醇与聚氧亚丙基二醇的聚合物,其聚合数比为83:17,数均分子量为16000。
如表1所示那样,将上述部分皂化聚乙烯醇(以聚合物A表示)1.33质量%和聚氧亚乙基聚氧亚丙基二醇醚(以表面活性剂A表示)0.5质量%在纯水98.17质量%(余量)中混合溶解,得到切片加工用制剂。
(比较例1)
将聚乙烯基吡咯烷酮与乙烯基乙酸酯的摩尔比为6:4、且重均分子量为51000的共聚物(以聚合物B表示)0.83质量%、和聚氧亚乙基聚氧亚丙基二醇醚(以表面活性剂A表示)0.83质量%在纯水98.34质量%(余量)中混合溶解,得到切片加工用制剂。
(比较例2)
将普鲁兰多糖(麦芽三糖的α-1,6键的多糖类)(以聚合物C表示)1.33质量%、和聚氧基亚烷基烷基醚(HLB14.7)(以表面活性剂B表示)0.33质量%在纯水98.34质量%(余量)中混合溶解,得到切片加工用制剂。
(各成分的切片加工试验)
将实施例1、比较例1~2的各加工用制剂用纯水稀释至1万倍,制备加工处理液。将按照照相元件而形成low-k膜的直径300mm的硅晶片安装在东京精密公司制切片装置AD3000T-HC上,以15升/分钟的流量向切断部分供给加工处理液,同时进行切片加工。
切片后,用Camtek公司制 晶片外观检查装置Eagle和オリンパス公司制测定显微镜进行观察,同时评价切割品质和晶片表面的灰尘量的评价。切割品质同样对比切断部位的烧焦、缺损、碎屑的产生状态。
此外,针对晶片表面的灰尘量,在收集统计芯片表面上存在的灰尘数后,设为以比较例2的灰尘量记作1.00的指数来表述。指数值越小,则灰尘越少,表示未被污染。
(各成分的试验结果和评价)
上述各成分的切片加工试验的结果示于表1。
切割品质评价了烧焦、缺损、碎屑的产生状态,实施例1、比较例1~2均未发现这些的产生,为优良(○),没有观察到显著性差异。
针对晶片表面的灰尘量(指数),与比较例2的1.00相比,比较例1为0.25,实施例1的灰尘量进一步减少,为0.20,可知晶片表面的灰尘量少,污染度大幅降低。
(各稀释率的切片加工试验)
针对实施例1、比较例1,改变加工用制剂的稀释率,与上述同样地进行切片加工试验。
加工用制剂的稀释倍率除了上述1万倍稀释液之外,还准备6万倍稀释液、10万倍稀释液来进行试验。
(各稀释率的试验结果和评价)
上述各稀释倍率的切片加工试验的结果示于表2。
相对于实施例1的1万倍稀释,实施例1-2的6万倍稀释的情况下灰尘量(指数)由0.20进一步降低至0.14,实施例1-3的10万倍稀释的情况下也低至0.18。
另一方面,比较例1的1万倍稀释的情况下灰尘量(指数)为0.25,但比较例1-2的6万倍稀释的情况下上升至0.45,比较例1-3的10万倍稀释的情况下进一步高达0.69。
像这样,比较例1的情况下,如果提高稀释率则灰尘量增加,与此相对地,实施例1的情况下即使提高稀释倍率,灰尘量也几乎不变,甚至减少,因此即使在高稀释倍率下也能够充分使用。
[表1]
Figure 54344DEST_PATH_IMAGE001
[表2]
Figure 834081DEST_PATH_IMAGE002

Claims (5)

1.切片加工用制剂,其在纯水中含有聚合度为200~400且皂化度为75~85摩尔%的部分皂化聚乙烯醇1.0~1.5质量%、和聚氧亚乙基与聚氧亚丙基的聚合数比为75:25~85:15且数均分子量为10000~20000的聚氧亚乙基聚氧亚丙基二醇醚0.4~0.6质量%。
2.根据权利要求1所述的切片加工用制剂,其中,上述部分皂化聚乙烯醇的聚合度为300,皂化度为80摩尔%。
3.根据权利要求1或2所述的切片加工用制剂,其中,上述聚氧亚乙基聚氧亚丙基二醇醚的聚氧亚乙基与聚氧亚丙基的聚合数比为83:17,数均分子量为15500。
4.根据权利要求1~3中任一项所述的切片加工用制剂,其中,上述加工用制剂进一步含有0.1质量%的苯基乙二醇。
5.切片加工处理液,其将上述权利要求1~4中任一项所述的切片加工用制剂用纯水稀释至1万~10万倍而使用。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115304967A (zh) * 2022-07-22 2022-11-08 大连奥首科技有限公司 一种晶圆切割保护液、制备方法、用途及切割方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040127047A1 (en) * 2002-09-30 2004-07-01 Shuhei Yamada Polishing composition and polishing method using the same
JP2007027531A (ja) * 2005-07-20 2007-02-01 Nikka Seiko Kk ウエハー類の水溶性表面保護剤
US20070181851A1 (en) * 2006-02-07 2007-08-09 Shuhei Yamada Polishing composition and polishing method
JP2008027984A (ja) * 2006-07-18 2008-02-07 Tokuyama Corp 基板洗浄液
JP2009013301A (ja) * 2007-07-05 2009-01-22 Adeka Corp ダイシング切削水用添加剤及びそれを使用した切削加工方法
CN102714151A (zh) * 2010-03-31 2012-10-03 古河电气工业株式会社 半导体晶片加工用粘合片
CN104096384A (zh) * 2014-05-12 2014-10-15 青岛蓬勃石油技术服务有限公司 一种消泡剂及其制备方法
US20160272846A1 (en) * 2013-03-19 2016-09-22 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
WO2017155020A1 (ja) * 2016-03-10 2017-09-14 大日本住友製薬株式会社 微細粒子含有組成物およびその製法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5253765Y2 (zh) 1974-10-26 1977-12-06
JPH01311196A (ja) * 1988-06-08 1989-12-15 Dai Ichi Kogyo Seiyaku Co Ltd 水溶性潤滑剤
JP4606010B2 (ja) 2003-04-30 2011-01-05 日東電工株式会社 放射線硬化型再剥離用水分散型アクリル系粘着剤組成物および放射線硬化再剥離型アクリル系粘着シート
JP2006111728A (ja) 2004-10-14 2006-04-27 Palace Chemical Co Ltd ワイヤソー用切削油剤
JP2006290956A (ja) * 2005-04-07 2006-10-26 Adeka Corp 水系潤滑剤組成物
US20090149359A1 (en) * 2007-12-10 2009-06-11 Hundley Lloyd E Formulation of a metal working fluid
US9694214B2 (en) * 2008-04-16 2017-07-04 Dow Corning Corporation Preparation of silicone microemulsions
WO2010040860A2 (de) * 2008-10-10 2010-04-15 Magna Steyr Fahrzeugtechnik Ag & Co Kg Verfahren zur herstellung und erstinbetriebnahme eines getriebes mit einem schmiermittel auf basis von wasser und derartiges schmiermittel
WO2010143579A1 (ja) * 2009-06-09 2010-12-16 日立化成工業株式会社 研磨剤、研磨剤セット及び基板の研磨方法
WO2014034425A1 (ja) 2012-08-31 2014-03-06 株式会社 フジミインコーポレーテッド 研磨用組成物及び基板の製造方法
JP2015134373A (ja) * 2013-12-20 2015-07-27 日化精工株式会社 レーザー加工用保護膜剤

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040127047A1 (en) * 2002-09-30 2004-07-01 Shuhei Yamada Polishing composition and polishing method using the same
JP2007027531A (ja) * 2005-07-20 2007-02-01 Nikka Seiko Kk ウエハー類の水溶性表面保護剤
US20070181851A1 (en) * 2006-02-07 2007-08-09 Shuhei Yamada Polishing composition and polishing method
JP2008027984A (ja) * 2006-07-18 2008-02-07 Tokuyama Corp 基板洗浄液
JP2009013301A (ja) * 2007-07-05 2009-01-22 Adeka Corp ダイシング切削水用添加剤及びそれを使用した切削加工方法
CN102714151A (zh) * 2010-03-31 2012-10-03 古河电气工业株式会社 半导体晶片加工用粘合片
US20160272846A1 (en) * 2013-03-19 2016-09-22 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
CN104096384A (zh) * 2014-05-12 2014-10-15 青岛蓬勃石油技术服务有限公司 一种消泡剂及其制备方法
WO2017155020A1 (ja) * 2016-03-10 2017-09-14 大日本住友製薬株式会社 微細粒子含有組成物およびその製法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115304967A (zh) * 2022-07-22 2022-11-08 大连奥首科技有限公司 一种晶圆切割保护液、制备方法、用途及切割方法
CN115304967B (zh) * 2022-07-22 2023-08-15 大连奥首科技有限公司 一种晶圆切割保护液、制备方法、用途及切割方法

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