JP2020035967A - ダイシング加工用製剤及び加工処理液 - Google Patents
ダイシング加工用製剤及び加工処理液 Download PDFInfo
- Publication number
- JP2020035967A JP2020035967A JP2018163424A JP2018163424A JP2020035967A JP 2020035967 A JP2020035967 A JP 2020035967A JP 2018163424 A JP2018163424 A JP 2018163424A JP 2018163424 A JP2018163424 A JP 2018163424A JP 2020035967 A JP2020035967 A JP 2020035967A
- Authority
- JP
- Japan
- Prior art keywords
- dicing
- preparation
- mass
- processing
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 30
- 238000009472 formulation Methods 0.000 title description 2
- 239000000203 mixture Substances 0.000 title description 2
- 238000002360 preparation method Methods 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 12
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 12
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 10
- -1 polyoxyethylene Polymers 0.000 claims abstract description 10
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 claims abstract description 10
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims abstract description 6
- 229920001451 polypropylene glycol Polymers 0.000 claims abstract description 6
- 238000007127 saponification reaction Methods 0.000 claims abstract description 6
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 3
- 238000007865 diluting Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 10
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 239000012790 adhesive layer Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 18
- 238000010790 dilution Methods 0.000 description 14
- 239000012895 dilution Substances 0.000 description 14
- 239000000428 dust Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 3
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- DBTMGCOVALSLOR-UHFFFAOYSA-N 32-alpha-galactosyl-3-alpha-galactosyl-galactose Natural products OC1C(O)C(O)C(CO)OC1OC1C(O)C(OC2C(C(CO)OC(O)C2O)O)OC(CO)C1O DBTMGCOVALSLOR-UHFFFAOYSA-N 0.000 description 1
- RXVWSYJTUUKTEA-UHFFFAOYSA-N D-maltotriose Natural products OC1C(O)C(OC(C(O)CO)C(O)C(O)C=O)OC(CO)C1OC1C(O)C(O)C(O)C(CO)O1 RXVWSYJTUUKTEA-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- FYGDTMLNYKFZSV-UHFFFAOYSA-N mannotriose Natural products OC1C(O)C(O)C(CO)OC1OC1C(CO)OC(OC2C(OC(O)C(O)C2O)CO)C(O)C1O FYGDTMLNYKFZSV-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- FYGDTMLNYKFZSV-BYLHFPJWSA-N β-1,4-galactotrioside Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@H](CO)O[C@@H](O[C@@H]2[C@@H](O[C@@H](O)[C@H](O)[C@H]2O)CO)[C@H](O)[C@H]1O FYGDTMLNYKFZSV-BYLHFPJWSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
- C08L29/02—Homopolymers or copolymers of unsaturated alcohols
- C08L29/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
- C09D129/02—Homopolymers or copolymers of unsaturated alcohols
- C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/54—Aqueous solutions or dispersions
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/02—Hydroxy compounds
- C10M2207/021—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/022—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least two hydroxy groups
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/02—Hydroxy compounds
- C10M2207/023—Hydroxy compounds having hydroxy groups bound to carbon atoms of six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/02—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/04—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds containing monomers having an unsaturated radical bound to an alcohol or ester thereof; bound to an aldehyde, ketonic, ether, ketal or acetal radical
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/101—Condensation polymers of aldehydes or ketones and phenols, e.g. Also polyoxyalkylene ether derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2020/00—Specified physical or chemical properties or characteristics, i.e. function, of component of lubricating compositions
- C10N2020/01—Physico-chemical properties
- C10N2020/04—Molecular weight; Molecular weight distribution
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2040/00—Specified use or application for which the lubricating composition is intended
- C10N2040/20—Metal working
- C10N2040/22—Metal working with essential removal of material, e.g. cutting, grinding or drilling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Dicing (AREA)
- Lubricants (AREA)
Abstract
Description
こうしたことが何に起因するものであるのか最初は良く判らなかったが、種々、研究を進めたところ次のようなことが判った。
また、ダイシング加工では多量の純水を掛け流しにしながら行われる為、多量の純水が必要で非常にコストがかかるし、さらに、水の使い過ぎによる地域住民の生活水への影響が懸念される場合もあった。
こうしたダイシング加工用製剤は、通常、純水で1万〜10万倍に希釈した加工処理液として、ダイシング加工処理工程においてダイシングブレードがダイシングを行っている部分に吹付けるようにして使用する。
また、本ダイシング加工用製剤は高倍率に希釈しても充分に効果が得られるので、ダイシング加工後に使用済みの加工処理液を処理水再生設備に余分な負荷や手間を掛けることなく通水できる。その結果、再生処理水の他工程などでの再利用や廃水処理が効率的に行うことができるようになる。
このポリビニルアルコールは、ビニルアルコールの重合度が200〜400程度のものであり、好ましくは250〜350程度、より好ましくは280〜320程度のものがよい。
また、このポリビニルアルコールは、部分的にケン化されている部分ケン化ポリビニルアルコールであって、そのケン化度は70〜90モル%程度、好ましくは75〜85モル%程度、より好ましくは78〜82モル%程度にすると良い。
このポリオキシエチレンポリオキシプロピレングリコールエーテルは、ポリオキシエチレンとポリオキシプロピレングリコールの共重合体であるが、その重合数比が75:25〜85:15程度であり、好ましくは80:20〜83:17程度のものが良い。
そして、その数平均分子量は、10000〜20000程度、好ましくは13000〜18000程度、より好ましくは14000〜16000程度のものが良い。
この希釈された処理液は、ウェーハをダイシングブレードによってダイシングしている部分に連続的に供給され、ダイシングによって発生したダイシング屑及びダイシングテープの粘着剤の微細片を洗い流すように除去するようになり、併せてダイシングブレードの摩擦に伴うウェーハの局部的な温度上昇も防ぐようになる。
部分ケン化ポリビニルアルコールとして、ビニルアルコールの重合度が300、ケン化度が80モル%、数平均分子量16000のものを使用。
ポリオキシエチレンポリオキシプロピレングリコールエーテルとして、ポリオキシエチレングリコールとポリオキシプロピレングリコールの重合体でその重合数比が83:17で、数平均分子量が16000であるものを使用。
表1に示すように上記部分ケン化ポリビニルアルコール(ポリマーAで表示)の1.33質量%とポリオキシエチレンポリオキシプロピレングリコールエーテル(界面活性剤Aで表示)の0.5質量%を純水98.17質量%(balance)に混合して溶かしダイシング加工用製剤を得た。
ポリビニルピロリドンとビニルアセテートのモル比を6:4とし、重量平均分子量を51000とする共重合体(ポリマーBで表示)を0.83質量%と、ポリオキシエチレンポリオキシプロピレングリコールエーテル(界面活性剤Aで表示)を0.83質量%とを純水98.34質量%(balance)に混合して溶かしダイシング加工用製剤を得た。
プルラン(マルトトリオースのα-1,6結合の多糖類)(ポリマーCで表示)を1.33質量%と、ポリオキシアルキレンアルキルエーテル(HLB14.7)(界面活性剤Bで表示)を0.33質量%とを純水98.34質量%(balance)に混合して溶かしダイシング加工用製剤を得た。
実施例1、比較例1〜2の各加工用製剤を純水で1万倍に希釈した加工処理液を調製した。撮像素子を模してlow−k膜を形成した直径300mmのシリコンウェーハを東京精密社製ダイシング装置AD3000T−HCにセットし、加工処理液を15リットル/分の流量で切断部分へ供給しながらダイシング加工を行った。
ダイシング後、Camtek社製 ウェーハ外観検査装置Eagleおよびオリンパス社製測定顕微鏡で観察しながら、カット品位とウェーハ表面のダスト量の評価をした。カット品位は、同様に切断箇所のヤケ、カケ、チッピングの発生状態を比較した。
また、ウェーハ表面のダスト量については、チップ表面に存在するダスト数を集計後、比較例2のダスト量を1.00とする指数にして表記した。指数値が小さいほどダストが少なく、汚染されていないことを示している。
上記成分別ダイシング加工試験の結果を表1に示す。
カット品位は、ヤケ、カケ、チッピングの発生状態を評価したが実施例1比較例1〜2ともそれらの発生は見られず優良(○)であり有意差は見られなかった。
ウェーハ表面のダスト量(指数)については、比較例2の1.00に比較して、比較例1のものは0.25であるが、実施例1のものはさらにダスト量が少なくなっていて0.20でありウェーハ表面のダスト量が少なく、汚染度が大幅に低くなっていることが判った。
実施例1、比較例1について、加工用製剤の希釈率を変えて上記と同様にダイシング加工試験を行った。
加工用製剤の希釈倍率は、上記した1万倍希釈液の他、6万倍希釈液、10万倍希釈液を用意して試験を行った。
上記希釈倍率別ダイシング加工試験の結果を表2に示す。
実施例1の1万倍希釈のものに対して、実施例1-2の6万倍希釈としたものではダスト量(指数)が0.20から0.14へと更に低下し、実施例1-3の10万倍希釈のものも0.18と低くなった。
一方、比較例1の1万倍希釈のものではダスト量(指数)が0.25であったものが、比較例1-2の6万倍希釈のものでは0.45と上昇し、比較例1-3の10万倍希釈のものでは0.69と更に高くなっている。
このように比較例1のものでは希釈率を上げるとダスト量が増えるのに対して、実施例1のものでは、希釈倍率を上げてもダスト量が殆ど変らず、むしろ少なくなっているので、高希釈倍率でも充分に使用することができる。
Claims (5)
- 重合度が200〜400でありケン化度が75〜85モル%である部分ケン化ポリビニルアルコール1.0〜1.5質量%と、ポリオキシエチレンとポリオキシプロピレンの重合数比が75:25〜85:15であり数平均分子量が10000〜20000であるポリオキシエチレンポリオキシプロピレングリコールエーテルの0.4〜0.6質量%を純水中に含有するダイシング加工用製剤。
- 上記部分ケン化ポリビニルアルコールは、その重合度が300であり、ケン化度が80モル%である請求項1に記載のダイシング加工用製剤。
- 上記ポリオキシエチレンポリオキシプロピレングリコールエーテルは、ポリオキシエチレンとポリオキシプロピレンの重合数比が83:17であり数平均分子量が15500である請求項1または2に記載のダイシング加工用製剤。
- 上記加工用製剤は更にフェニルグリコールを0.1質量%含有する請求項1〜3のいずれかに記載のダイシング加工用製剤。
- 上記請求項1〜4のいずれかに記載のダイシング加工用製剤を純水で1万〜10万倍に希釈して使用するダイシング加工処理液。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018163424A JP7221479B2 (ja) | 2018-08-31 | 2018-08-31 | ダイシング加工用製剤及び加工処理液 |
TW108124352A TWI716030B (zh) | 2018-08-31 | 2019-07-10 | 切割加工用製劑及加工處理液 |
US16/542,768 US11608433B2 (en) | 2018-08-31 | 2019-08-16 | Formulation and processing solution for dicing process, and method for processing |
SG10201907630XA SG10201907630XA (en) | 2018-08-31 | 2019-08-19 | Formulation and processing solution for dicing process, and method for processing |
KR1020190102893A KR20200026072A (ko) | 2018-08-31 | 2019-08-22 | 다이싱 가공용 제제 및 가공 처리액 |
DE102019123080.2A DE102019123080B4 (de) | 2018-08-31 | 2019-08-28 | Prozesslösung für Chipvereinzelungsprozess sowie Chipvereinzelungsprozess |
CN201910813115.5A CN110875221B (zh) | 2018-08-31 | 2019-08-30 | 切片加工用制剂和加工处理液 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018163424A JP7221479B2 (ja) | 2018-08-31 | 2018-08-31 | ダイシング加工用製剤及び加工処理液 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020035967A true JP2020035967A (ja) | 2020-03-05 |
JP7221479B2 JP7221479B2 (ja) | 2023-02-14 |
Family
ID=69526937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018163424A Active JP7221479B2 (ja) | 2018-08-31 | 2018-08-31 | ダイシング加工用製剤及び加工処理液 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11608433B2 (ja) |
JP (1) | JP7221479B2 (ja) |
KR (1) | KR20200026072A (ja) |
CN (1) | CN110875221B (ja) |
DE (1) | DE102019123080B4 (ja) |
SG (1) | SG10201907630XA (ja) |
TW (1) | TWI716030B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115304967B (zh) * | 2022-07-22 | 2023-08-15 | 大连奥首科技有限公司 | 一种晶圆切割保护液、制备方法、用途及切割方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01311196A (ja) * | 1988-06-08 | 1989-12-15 | Dai Ichi Kogyo Seiyaku Co Ltd | 水溶性潤滑剤 |
JP2004346296A (ja) * | 2003-04-30 | 2004-12-09 | Nitto Denko Corp | 放射線硬化型再剥離用水分散型アクリル系粘着剤組成物および放射線硬化再剥離型アクリル系粘着シート |
JP2006111728A (ja) * | 2004-10-14 | 2006-04-27 | Palace Chemical Co Ltd | ワイヤソー用切削油剤 |
JP2009013301A (ja) * | 2007-07-05 | 2009-01-22 | Adeka Corp | ダイシング切削水用添加剤及びそれを使用した切削加工方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5253765Y2 (ja) | 1974-10-26 | 1977-12-06 | ||
JP4593064B2 (ja) * | 2002-09-30 | 2010-12-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP2006290956A (ja) * | 2005-04-07 | 2006-10-26 | Adeka Corp | 水系潤滑剤組成物 |
JP2007027531A (ja) * | 2005-07-20 | 2007-02-01 | Nikka Seiko Kk | ウエハー類の水溶性表面保護剤 |
JP2007214205A (ja) * | 2006-02-07 | 2007-08-23 | Fujimi Inc | 研磨用組成物 |
JP2008027984A (ja) * | 2006-07-18 | 2008-02-07 | Tokuyama Corp | 基板洗浄液 |
US20090149359A1 (en) * | 2007-12-10 | 2009-06-11 | Hundley Lloyd E | Formulation of a metal working fluid |
US9694214B2 (en) * | 2008-04-16 | 2017-07-04 | Dow Corning Corporation | Preparation of silicone microemulsions |
CN102209801B (zh) * | 2008-10-10 | 2014-05-14 | 玛格纳斯太尔汽车技术股份公司 | 用水性润滑剂第一次生产并调试变速器单元的方法以及该润滑剂 |
KR20120023043A (ko) * | 2009-06-09 | 2012-03-12 | 히다치 가세고교 가부시끼가이샤 | 연마제, 연마제 세트 및 기판의 연마 방법 |
CN102714151A (zh) * | 2010-03-31 | 2012-10-03 | 古河电气工业株式会社 | 半导体晶片加工用粘合片 |
JP6184962B2 (ja) | 2012-08-31 | 2017-08-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び基板の製造方法 |
EP3967736B1 (en) * | 2013-03-19 | 2023-10-11 | Fujimi Incorporated | Polishing composition, method for producing polishing composition, and kit for preparing polishing composition |
JP2015134373A (ja) * | 2013-12-20 | 2015-07-27 | 日化精工株式会社 | レーザー加工用保護膜剤 |
CN104096384A (zh) * | 2014-05-12 | 2014-10-15 | 青岛蓬勃石油技术服务有限公司 | 一种消泡剂及其制备方法 |
WO2017155020A1 (ja) * | 2016-03-10 | 2017-09-14 | 大日本住友製薬株式会社 | 微細粒子含有組成物およびその製法 |
-
2018
- 2018-08-31 JP JP2018163424A patent/JP7221479B2/ja active Active
-
2019
- 2019-07-10 TW TW108124352A patent/TWI716030B/zh active
- 2019-08-16 US US16/542,768 patent/US11608433B2/en active Active
- 2019-08-19 SG SG10201907630XA patent/SG10201907630XA/en unknown
- 2019-08-22 KR KR1020190102893A patent/KR20200026072A/ko not_active Application Discontinuation
- 2019-08-28 DE DE102019123080.2A patent/DE102019123080B4/de active Active
- 2019-08-30 CN CN201910813115.5A patent/CN110875221B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01311196A (ja) * | 1988-06-08 | 1989-12-15 | Dai Ichi Kogyo Seiyaku Co Ltd | 水溶性潤滑剤 |
JP2004346296A (ja) * | 2003-04-30 | 2004-12-09 | Nitto Denko Corp | 放射線硬化型再剥離用水分散型アクリル系粘着剤組成物および放射線硬化再剥離型アクリル系粘着シート |
JP2006111728A (ja) * | 2004-10-14 | 2006-04-27 | Palace Chemical Co Ltd | ワイヤソー用切削油剤 |
JP2009013301A (ja) * | 2007-07-05 | 2009-01-22 | Adeka Corp | ダイシング切削水用添加剤及びそれを使用した切削加工方法 |
Also Published As
Publication number | Publication date |
---|---|
DE102019123080A1 (de) | 2020-03-05 |
CN110875221B (zh) | 2024-04-26 |
CN110875221A (zh) | 2020-03-10 |
KR20200026072A (ko) | 2020-03-10 |
SG10201907630XA (en) | 2020-03-30 |
TW202010835A (zh) | 2020-03-16 |
TWI716030B (zh) | 2021-01-11 |
JP7221479B2 (ja) | 2023-02-14 |
US11608433B2 (en) | 2023-03-21 |
US20200075413A1 (en) | 2020-03-05 |
DE102019123080B4 (de) | 2021-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6310657B2 (ja) | レーザダイシング用ウエハ保護膜組成物 | |
JP5511799B2 (ja) | ウエハーダイシング用保護膜組成物 | |
JPH11116942A (ja) | 研磨用組成物 | |
TW201226492A (en) | Polishing composition and rinsing composition | |
KR102267568B1 (ko) | 반도체 기판용 습윤제 및 연마용 조성물 | |
CN109216228B (zh) | 激光加工用保护膜剂 | |
JP6228032B2 (ja) | 半導体基板を連続的に製造する方法 | |
JP2019117904A (ja) | 研磨用組成物 | |
JP7534283B2 (ja) | 研磨用組成物 | |
KR20070100122A (ko) | 반도체 웨이퍼 연마용 에칭액 조성물, 그것을 이용한연마용 조성물의 제조방법, 및 연마가공방법 | |
JP2020035967A (ja) | ダイシング加工用製剤及び加工処理液 | |
JP2001110760A (ja) | シリコンウェハー用研磨助剤 | |
JP2007152858A (ja) | 高脆性材料の切削又は研削加工方法及び切り屑付着抑制剤 | |
KR101753235B1 (ko) | 웨이퍼 세정액 및 이를 응용한 웨이퍼 가공방법 | |
JP6305674B2 (ja) | 研磨用組成物及び半導体基板の製造方法 | |
KR20200115822A (ko) | 표면처리 조성물 및 그것을 이용한 표면처리 방법 | |
JP7356248B2 (ja) | リンス用組成物およびリンス方法 | |
WO2022137897A1 (ja) | 研磨用組成物及びシリコンウェーハの研磨方法 | |
WO2021131383A1 (ja) | 研磨用組成物及びシリコンウェーハの研磨方法 | |
JP2009062426A (ja) | 遊離砥粒ワイヤソー用水溶性加工油剤、スラリー及び切断加工方法 | |
TW202120630A (zh) | 保護膜組成物、半導體裝置的製造方法及雷射切割方法 | |
TW202033689A (zh) | 研磨用組合物 | |
JP2019117816A (ja) | シリコンウェーハ製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210219 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220131 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220726 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221227 |
|
RD13 | Notification of appointment of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7433 Effective date: 20230110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20230110 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7221479 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |