CN110828388A - 一种半导体器件及其制造封装方法 - Google Patents
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Abstract
本发明公开了一种半导体器件及其制造封装方法,包括芯片、引线框架和封装体,引线框架包括芯片座和引脚,还包括导流引线,导流引线分别与芯片和引脚连接、导流引线中段向芯片外凸出,封装体注塑成型包覆于芯片、引线框架外且引脚部分伸出封装体,该封装体上设置有浇注口,浇注口设置于靠近导流引线的一侧。本发明将浇注口设置在靠近导流引线的一侧,使得封装体注塑时能够顺着导流引线的方向流动,有效消除了导流引线下方的气孔及熔接线;将导流引线的中段向芯片外凸出,使导流引线与芯片、导流引线与引线框架之间的间隙扩大,方便封装体顺利填充进去;有效防止芯片脱层、封装体胶体开裂、水汽入侵、离子污染等问题,提高了半导体器件的使用寿命。
Description
技术领域
本发明属于电子器件技术领域,具体涉及一种半导体器件及其制造封装方法。
背景技术
半导体器件通常要经过芯片制造与芯片封装两部分加工过程,因此,芯片自身的特性以及封装技术的优劣都直接决定了半导体器件产品最终的性能。半导体器件封装是将流片完成后的裸芯片进行机械保护、电性保护、内部电路引出等工作,其主要工艺流程大致可以分为芯片焊接、导线焊接、环氧树脂注塑、切脚成型、产品测试。伴随着芯片加工技术集成度与精细度的不断提升,芯片自身的性能已经有了较大进步,但是封装技术却仍然存在很多问题,如在环氧树脂注塑流程中,由于发射极焊接的铝线较粗,铝线下方容易产生气孔和熔接线,该注塑缺陷导致半导体器件在冷热工况下出现可靠性失效,如芯片脱层、环氧树脂胶体开裂、水汽入侵、离子污染芯片等问题,导致芯片损坏,无法正常工作。
中国专利号为CN104112678B的发明专利,公开了一种智能功率模块的制造方法,其包括步骤:S1)提供半成品智能功率模块;S2)提供引线框架结构;S3)焊接各个固定脚并使固定脚与电引脚分别位于基板的相对两侧;S4)放置半成品智能功率模块于模具的型腔内,并利用模具夹持固定脚的末端及电引脚的末端;S5)于模具的型腔内注入液态封装体并成模;S6)开模并将封装后的半成品智能功率模块取出;S7)切割所述电引脚的连接在一起的末端及切割所述固定脚的伸出所述封装体外的部分。虽然该发明专利中基板事先通过处于对立两侧的电引脚和固定脚进行固定,避免因为注塑冲力不平衡而导致出现的不良品,提高封装的良品率,杜绝了封装孔洞的出现,提高了智能功率模块的可靠性能,但是该发明需要借助加持工装来实现,使用不便。
中国专利号为CN103824834B的发明专利公开了一种具有改进型封装结构的半导体器件及其制造方法,所述半导体器件包括半导体芯片、引线框架和封装树脂。半导体芯片位于引线框架的载片基岛区,所述引线框架包括引脚区,其中第二引脚区上端连有第二键合区。半导体芯片与第二键合区之间通过金属引线电学相连。所述第二键合区相对于现有技术面积更大,从而确保低芯片在封装时,受金属引线限制的最大熔断电流可以有效提升,器件的导通电阻下降,从而最大限度的发挥芯片实际电流能力。但是该发明的发射极铝丝弧线高度低,封装时,树脂较难进入铝丝下方的狭窄区域,容易导致出现气孔,继而导致器件开裂、脱层、水汽入侵、离子污染芯片等问题。
发明内容
本发明的目的在于克服现有技术中半导体器件在冷热工况下容易出现可靠性失效,如芯片脱层、环氧树脂胶体开裂、水汽入侵、离子污染芯片等问题,提供一种半导体器件及其制造封装方法。
为实现上述目的,本发明采用的技术方案如下:一种半导体器件,包括芯片、引线框架和封装体,所述引线框架包括芯片座和引脚,该芯片座用于承载固定芯片,该引脚使芯片与外部实现电性连接,还包括导流引线,所述导流引线两端分别与芯片和引脚连接、且导流引线中段向芯片外凸出,所述封装体通过注塑成型包覆于芯片、引线框架外且引脚部分伸出封装体,该封装体上设置有浇注口,且浇注口设置于靠近导流引线的一侧。
进一步的,所述的芯片包括三个电极,分别为栅极、集电极和发射极,所述引脚包括与芯片电极对应连接的栅极引脚、集电极引脚和发射极引脚。
进一步的,所述发射极引脚与发射极连接的引线为发射极引线,该发射极引线为导流引线。
进一步的,所述导流引线自一端向另一端向上弯曲形成弯曲线弧结构,弯曲线弧高度为750~1000um。
进一步的,所述的导流引线为金属引线。
进一步的,所述的芯片通过结合件固定在芯片座上。
进一步的,所述的结合件为锡膏、锡线、纳米银的任意一种。
一种半导体器件的制造封装方法,包括以下步骤:
S1:准备芯片和引线框架;
S2:将芯片焊接固定在引线框架的芯片座上,实现机械连接及电性连接;
S3:将芯片的电极与对应引线框架的引脚连接,同时至少一个电极是通过导流引线与引脚连接;
S4:将S3得到的半成品半导体器件放置于模具内进行注塑包封,将融化后的封装体通过浇注口注入模具内,浇注口设置于靠近导流引线的一侧,封装体填充时能顺着导流引线方向流动,去除气孔及熔接线,导流引线使芯片、导流引线、引线框架之间的间隙扩大,封装体能够更好的填充进去;
S5:待液态封装体固化后,开模并将封装后的半成品半导体器件取出;
S6:切割多余的封装体。
进一步的,所述S1中,所述引线框架为联排引线框架,所述联排引线框架包含多个并列连接排布的引线框架,引线框架之间通过连杆连接。
进一步的,所述S4注塑包封后连杆伸出封装体外,在S6步骤中将封装体切除。
进一步的,所述S4中封装体的材料为环氧树脂。
由上述对本发明的描述可知,与现有技术相比,本发明提供的一种半导体器件及其制造封装方法,将封装体浇注口设置在靠近导流引线的一侧,使得封装体注塑时能够顺着导流引线的方向流动,有效消除了导流引线下方的气孔及熔接线;将导流引线的中段向芯片外凸出使得线弧高度提高,使导流引线与芯片、导流引线与引线框架之间的间隙扩大,方便封装体顺利填充进去;有效防止芯片脱层、封装体胶体开裂、水汽入侵、离子污染等问题,提高了半导体器件的使用寿命。
附图说明
图1为本发明半导体器件装配示意图;
图2为本发明发射极引线结构示意图;
图3为S2实施后的结构示意图;
图4为S3中焊接发射极引线实施后的结构示意图;
图5为S3实施后的结构示意图;
图6为S4实施后的结构示意图;
图7为S6实施后的结构示意图。
具体实施方式
以下将结合本发明实施例中的附图对本发明中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明的一部分实施例,而不是全部的实施例。
如图1所示,一种半导体器件,包括芯片1、引线框架2、封装体3、导流引线4,所述芯片包括三个电极,分别为栅极、集电极和发射极;
所述引线框架2包括芯片座21和与芯片电极对应的引脚,所述芯片座21用于承载固定芯片1,通过结合件如锡膏或锡线或纳米银将芯片1固定在芯片座2上,所述的引脚分别为栅极引脚22、集电极引脚23和发射极引脚24,使芯片与外部实现电性连接;
所述的导流引线4为金属引线,导流引线4两端分别与芯片1和引脚连接、且导流引线4中段向芯片外凸出,栅极极引脚22与栅极极连接的引线为栅极引线41,发射极引脚24与发射极连接的引线为发射极引线42,该发射极引线41为导流引线,发射极引线42自一端向另一端向上弯曲形成弯曲线弧结构,所述弯曲线弧高度为750~1000um,本实施例中弯曲线弧高度为900um,使发射极引线42、芯片1、引线框架2之间的间隙扩大,方便封装体3如环氧树脂顺利填充进去,如图2所示;
所述封装体3包覆所述芯片1、引线框架2和引线4,且引脚部分伸出封装体3,为芯片1提供物理及电性保护、应力缓冲和散热作用;所述封装体3设置有浇注口5,所述浇注口5设置于靠近发射极引线42的一侧,使得封装体3注塑时能够顺着发射极引线42方向流动,有效消除了发射极引线42下方的气孔及熔接线。
一种半导体器件的制造封装方法,包括以下步骤:
S1:准备芯片1和引线框架2,引线框架2上还设置有连杆25,方便引线框架传送、桥接、支撑,同时引线框架2通过连杆25并列连接排布形成引线框架阵列,便于批量自动化生产;
S2:采用锡膏或锡线或纳米银将芯片1焊接固定在引线框架2的芯片座21上,实现芯片1机械连接及电性连接,连接后如图3所示;
S3:采用超音波冷焊设备将芯片1的发射极和引线框架2的发射极引脚24用发射极引线42连接形成回路,通过设定设备参数改变焊头在焊接过程中的高度将发射极引线42自头部向端部弯曲形成弯曲线弧,从而提高发射极引线42的线弧高度,焊接后如图4所示;将芯片1的栅极与引线框架2的栅极引脚22通过栅极引线41连接,焊接后如图5所示;
S4:将S3得到的半成品半导体器件放置于模具内进行注塑包封,将融化后的封装体3如环氧树脂通过浇注口5注入模具内,浇注口5设置于靠近发射极引线42的一侧,封装体充时能顺着发射极引线42方向流动,去除气孔及熔接线,发射极引线42使芯片1、发射极引线42、引线框架2之间的间隙扩大,封装体3能够更好的填充进去,封装后,环氧树脂包覆所述芯片1、引线框架2和引线4且引脚部分伸出封装体3,如图6所示;
S5:待液态封装体固化后,开模并将封装后的半成品半导体器件取出;
S6:切割多余的封装体和伸出封装体的连杆25,使连接的半导体器件分离,如图7所示。
本发明提供的一种半导体器件及其制造封装方法,将封装体浇注口设置在靠近发射极引线一侧,使得环氧树脂注塑时能够顺着发射极引线方向流动,有效消除了发射极引线下方的气孔及熔接线;将发射极引线中段向芯片外凸出使发射极引线线弧高度提高,发射极引线、芯片、引线框架之间的间隙扩大,方便环氧树脂顺利填充进去;有效防止芯片脱层、环氧树脂胶体开裂、水汽入侵、离子污染等问题,提高了半导体器件的使用寿命。
上述仅为本发明的若干具体实施方式,但本发明的设计构思并不局限于此,凡利用此构思对本发明进行非实质性的改动,均应属于侵犯本发明保护范围的行为。
Claims (11)
1.一种半导体器件,包括芯片、引线框架和封装体,所述引线框架包括芯片座和引脚,该芯片座用于承载固定芯片,该引脚使芯片与外部实现电性连接,其特征在于:还包括导流引线,所述导流引线两端分别与芯片和引脚连接、且导流引线中段向芯片外凸出,所述封装体通过注塑成型包覆于芯片、引线框架外且引脚部分伸出封装体,该封装体上设置有浇注口,且浇注口设置于靠近导流引线的一侧。
2.根据权利要求1所述的半导体器件,其特征在于:所述的芯片包括三个电极,分别为栅极、集电极和发射极,所述引脚包括与芯片电极对应连接的栅极引脚、集电极引脚和发射极引脚。
3.根据权利要求2所述的半导体器件,其特征在于:所述发射极引脚与发射极连接的引线为发射极引线,该发射极引线为导流引线。
4.根据权利要求1所述的半导体器件,其特征在于:所述导流引线自一端向另一端向上弯曲形成弯曲线弧结构,弯曲线弧高度为750~1000um。
5.根据权利要求1所述的半导体器件,其特征在于:所述的导流引线为金属引线。
6.根据权利要求1所述的半导体器件,其特征在于:所述的芯片通过结合件固定在芯片座上。
7.根据权利要求6所述的半导体器件,其特征在于:所述的结合件为锡膏、锡线、纳米银的任意一种。
8.一种半导体器件的制造封装方法,其特征在于:包括以下步骤:
S1:准备芯片和引线框架;
S2:将芯片焊接固定在引线框架的芯片座上,实现机械连接及电性连接;
S3:将芯片的电极与对应引线框架的引脚连接,同时至少一个电极是通过导流引线与引脚连接;
S4:将S3得到的半成品半导体器件放置于模具内进行注塑包封,将融化后的封装体通过浇注口注入模具内,浇注口设置于靠近导流引线的一侧,封装体填充时能顺着导流引线方向流动,去除气孔及熔接线,导流引线使芯片、导流引线、框架之间的间隙扩大,封装体能够更好的填充进去;
S5:待液态封装体固化后,开模并将封装后的半成品半导体器件取出;
S6:切割多余的封装体。
9.根据权利要求8所述的一种半导体器件的制造封装方法,其特征在于:所述S1中,所述引线框架为联排引线框架,所述联排引线框架包含多个并列连接排布的引线框架,引线框架之间通过连杆连接。
10.根据权利要求9所述的一种半导体器件的制造封装方法,其特征在于:所述S4注塑包封后连杆伸出封装体外,在S6步骤中将封装体切除。
11.根据权利要求8所述的一种半导体器件的制造封装方法,其特征在于:所述S4中封装体的材料为环氧树脂。
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