CN110828310A - 一种发射区二氧化硅腐蚀台阶制作方法 - Google Patents
一种发射区二氧化硅腐蚀台阶制作方法 Download PDFInfo
- Publication number
- CN110828310A CN110828310A CN201911039936.4A CN201911039936A CN110828310A CN 110828310 A CN110828310 A CN 110828310A CN 201911039936 A CN201911039936 A CN 201911039936A CN 110828310 A CN110828310 A CN 110828310A
- Authority
- CN
- China
- Prior art keywords
- corrosion
- sio2
- slices
- silicon dioxide
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 230000007797 corrosion Effects 0.000 title claims abstract description 42
- 238000005260 corrosion Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 26
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 16
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 16
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000011010 flushing procedure Methods 0.000 claims abstract description 5
- 238000005406 washing Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 9
- 230000000694 effects Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
一种发射区二氧化硅腐蚀台阶制作方法,包括如下步骤,在腐蚀槽中配制SiO2腐蚀溶液,配比为NH4F:HF=12:1~NH4F:HF=14:1,温度稳定在38±0.5℃将发射区SiO2腐蚀片放入所述腐蚀槽中腐蚀,将腐蚀好的片子放入冲水槽中冲洗干净,然后再放入甩干机干燥;利用硫酸去胶机去除光刻胶,最终完成SiO2腐蚀的整个过程,完成发射区图形。区别于现有技术,上述技术方案能够使得发射区台阶碗口变宽;下道铝膜覆盖时,台阶覆盖良好没有空洞;且铝膜腐蚀时,台阶处铝条完整无缺口断条。
Description
技术领域
本发明涉及一种双极型集成电路制作过程中发射区SIO2湿法腐蚀工艺。
背景技术
通常的发射区SIO2湿法腐蚀是在1:6(HF与NH4F)混合腐蚀液在28度温度下完成,这样发射区腐蚀出来的台阶型貌比较抖直,在下道金属覆盖时发射区台阶处形成空洞,在负胶湿法腐蚀时发射区台阶缺口断条。
如何改善发射区台阶型貌,如何提高发射区金属覆盖工艺质量,已成为工程技术人员重要研究课题。
发明内容
为此,需要提供一种发射区二氧化硅腐蚀台阶制作方法,解决制作发射区台阶的问题。
一种发射区二氧化硅腐蚀台阶制作方法,包括如下步骤,
在腐蚀槽中配制SiO2腐蚀溶液,配比为NH4F:HF=12:1~NH4F:HF=14:1,温度稳定在38±0.5℃
将发射区SiO2腐蚀片放入所述腐蚀槽中腐蚀,
将腐蚀好的片子放入冲水槽中冲洗干净,然后再放入甩干机干燥;
利用硫酸去胶机去除光刻胶,最终完成SiO2腐蚀的整个过程,完成发射区图形。
具体地,还包括步骤,氧化6200A发射区氧化层,光刻形成所需图形作为腐蚀掩护。
具体地,还包括步骤,腐蚀前坚膜。
区别于现有技术,上述技术方案能够使得发射区台阶碗口变宽;下道铝膜覆盖时,台阶覆盖良好没有空洞;且铝膜腐蚀时,台阶处铝条完整无缺口断条。
附图说明
图1为具体实施方式所述的发射区前工艺示意图;
图2为具体实施方式所述的光刻形成腐蚀掩护示意图;
图3为具体实施方式所述的混合溶液腐蚀示意图;
图4为具体实施方式所述的去除光刻胶,形成发射区图形示意图;
图5为具体实施方式所述的发射区台阶效果示意图;
图6为具体实施方式所述的原发射区台阶效果对比参考图。
具体实施方式
为详细说明技术方案的技术内容、构造特征、所实现目的及效果,以下结合具体实施例并配合附图详予说明。
请参阅图1,本发明提供了一种双极型集成电路制作过程中发射区二氧化硅腐蚀台阶制作方法,具体包括如下步骤:
步骤1:完成发射区前的工艺
完成发射区前工艺,氧化6200A发射区氧化层,如图1所示,其中I层为基层,II层为沉积的氧化层。
2)光刻形成所需图形作为腐蚀掩护。如图2所示。III为光刻胶层。
步骤2:腐蚀前处理
腐蚀前坚膜(HardBake),坚膜的具体过程是将双极型集成电路放入150度烘箱烘烤55分钟,主要作用是去除光刻后残留的显影液溶剂,增强光刻胶的粘附,减少了腐蚀过程的横向侵蚀。其意义在于减少光刻胶内液体溶剂含量,增强光刻胶与介质层的粘附性,有利于获得更好的腐蚀效果。
腐蚀前打胶,其意义在于去除光刻胶内残留的底膜,增强腐蚀液与介质层的浸润,有利于获得更好的腐蚀效果。
步骤3:腐蚀设备的准备
配备SiO2腐蚀设备:包含带有水浴加热的腐蚀槽、冲水槽、甩干机。其中腐蚀槽有泵循环装置,以确保腐蚀溶液能够充分混合均匀,提高腐蚀效果。如图3所示,IV为腐蚀区。
步骤4:配制腐蚀液
在腐蚀槽中配制SiO2腐蚀溶液,NH4F:HF=12:1~NH4F:HF=14:1,温度稳定在38±0.5℃;
在优选的实施例中,我们以NH4F:HF=13:1的比例进行说明。
步骤5:发射区SiO2腐蚀
首先将发射区SiO2腐蚀片放入腐蚀槽(NH4F:HF=13:1混合溶液)中腐蚀,腐蚀干净。
将腐蚀好的片子放入冲水槽中冲洗干净,然后再放入甩干机甩干片子。
步骤6:腐蚀后去胶
利用硫酸去胶机去除光刻胶,最终完成SiO2腐蚀的整个过程,完成发射区图形。如图4所示。
步骤7:下道金属覆盖
下道金属覆盖时,发射区台阶处金属覆盖良好,无断裂空洞,如图5SEM所示。
本发明具有以下有益的效果:
如第5步骤第1点所述:发射区SiO2在NH4F:HF=13:1混合溶液腐蚀,可以有以下作用:①、发射区台阶碗口变宽;如图6中的对比效果图显示,发射区台阶处的介质在现有技术采用28度环境,NH4F:HF=6:1的情况下将会产生较大的缺口。②、下道铝膜覆盖时,台阶覆盖良好没有空洞;③、铝膜腐蚀时,台阶处铝条完整无缺口断条。
需要说明的是,尽管在本文中已经对上述各实施例进行了描述,但并非因此限制本发明的专利保护范围。因此,基于本发明的创新理念,对本文所述实施例进行的变更和修改,或利用本发明说明书及附图内容所作的等效结构或等效流程变换,直接或间接地将以上技术方案运用在其他相关的技术领域,均包括在本发明专利的保护范围之内。
Claims (3)
1.一种发射区二氧化硅腐蚀台阶制作方法,包括如下步骤,
在腐蚀槽中配制SiO2腐蚀溶液,配比为NH4F:HF=12:1~NH4F:HF=14:1,温度稳定在38±0.5℃
将发射区SiO2腐蚀片放入所述腐蚀槽中腐蚀,
将腐蚀好的片子放入冲水槽中冲洗干净,然后再放入甩干机干燥;
利用硫酸去胶机去除光刻胶,最终完成SiO2腐蚀的整个过程,完成发射区图形。
2.根据权利要求1所述的发射区二氧化硅腐蚀台阶制作方法,其特征在于,还包括步骤,氧化6200A发射区氧化层,光刻形成所需图形作为腐蚀掩护。
3.根据权利要求2所述的发射区二氧化硅腐蚀台阶制作方法,其特征在于,还包括步骤,腐蚀前坚膜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911039936.4A CN110828310A (zh) | 2019-10-29 | 2019-10-29 | 一种发射区二氧化硅腐蚀台阶制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911039936.4A CN110828310A (zh) | 2019-10-29 | 2019-10-29 | 一种发射区二氧化硅腐蚀台阶制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110828310A true CN110828310A (zh) | 2020-02-21 |
Family
ID=69551179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911039936.4A Pending CN110828310A (zh) | 2019-10-29 | 2019-10-29 | 一种发射区二氧化硅腐蚀台阶制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110828310A (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5193166A (ja) * | 1975-02-13 | 1976-08-16 | Shirikonsankamakuyoetsuchingueki | |
EP0012955A2 (de) * | 1978-12-29 | 1980-07-09 | International Business Machines Corporation | Ätzmittel zum Ätzen von Siliciumoxiden auf einer Unterlage und Ätzverfahren |
JPH0541372A (ja) * | 1991-08-05 | 1993-02-19 | Sharp Corp | シリコン酸化膜のウエツトエツチング方法 |
CN102709174A (zh) * | 2012-06-01 | 2012-10-03 | 吉林华微电子股份有限公司 | 先行氩离子注入损伤氧化层控制腐蚀角度的方法 |
CN102969246A (zh) * | 2012-12-17 | 2013-03-13 | 福建福顺微电子有限公司 | 一种平面可控硅制造方法 |
CN107817655A (zh) * | 2017-10-31 | 2018-03-20 | 安徽富芯微电子有限公司 | 一种用于降低光刻单面保护缺陷的制造方法 |
-
2019
- 2019-10-29 CN CN201911039936.4A patent/CN110828310A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5193166A (ja) * | 1975-02-13 | 1976-08-16 | Shirikonsankamakuyoetsuchingueki | |
EP0012955A2 (de) * | 1978-12-29 | 1980-07-09 | International Business Machines Corporation | Ätzmittel zum Ätzen von Siliciumoxiden auf einer Unterlage und Ätzverfahren |
JPH0541372A (ja) * | 1991-08-05 | 1993-02-19 | Sharp Corp | シリコン酸化膜のウエツトエツチング方法 |
CN102709174A (zh) * | 2012-06-01 | 2012-10-03 | 吉林华微电子股份有限公司 | 先行氩离子注入损伤氧化层控制腐蚀角度的方法 |
CN102969246A (zh) * | 2012-12-17 | 2013-03-13 | 福建福顺微电子有限公司 | 一种平面可控硅制造方法 |
CN107817655A (zh) * | 2017-10-31 | 2018-03-20 | 安徽富芯微电子有限公司 | 一种用于降低光刻单面保护缺陷的制造方法 |
Non-Patent Citations (1)
Title |
---|
王慧泉等: "BOE溶液腐蚀PN结N型区域现象", 《纳米技术与精密工程》 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6499654B2 (ja) | シリコン基板上に堆積されたマスクの選択的エッチング方法 | |
JP2548881B2 (ja) | 半導体素子製造におけるバイアコンタクト形成方法 | |
KR20180093096A (ko) | 주입형 포토레지스트 스트리핑 공정 | |
US7037822B2 (en) | Method of forming metal line in semiconductor device | |
KR100194789B1 (ko) | 반도체 소자의 폴리머 제거 방법 | |
CN110828310A (zh) | 一种发射区二氧化硅腐蚀台阶制作方法 | |
US8795542B2 (en) | Removal of silicon nitrides during manufacturing of semiconductor devices | |
KR100867086B1 (ko) | 반도체 장치 제조 방법 및 장치 | |
TWI495009B (zh) | A Plasma Etching Method with Silicon Insulating Layer | |
TWI343078B (en) | Wet cleaning process and method for fabricating semiconductor device using the same | |
JP2002009061A (ja) | ウェットエッチング方法 | |
RU2419175C2 (ru) | Способ обработки подложек в жидкостном травителе | |
CN103532510A (zh) | 一种saw器件的腐蚀工艺 | |
US6074961A (en) | Caro's cleaning of SOG control wafer residue | |
KR20000013247A (ko) | 폴리실리콘막의 습식식각방법 | |
CN110858540A (zh) | 一种碳化硅u型槽的制备方法 | |
CN110993725A (zh) | 一种psg钝化层压点腐蚀方法 | |
CN111029247B (zh) | 一种降低暗电流的氧化层制备方法及复合结构 | |
KR100557611B1 (ko) | 반도체 소자의 게이트 산화막 형성 방법 | |
KR920007337B1 (ko) | 금속층위의 감광제 제거방법 | |
CN108281349B (zh) | 一种实现高陡直度深硅刻蚀结构的光刻工艺方法 | |
KR100373459B1 (ko) | 광전화학방법을 사용한 SiC산화와 식각 공정 | |
US6130153A (en) | Interconnection fabrication method for semiconductor device | |
JP2018056185A (ja) | エッチング液および基板処理方法 | |
KR100480468B1 (ko) | 반도체 제조용 포토레지스트 제거 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200221 |
|
RJ01 | Rejection of invention patent application after publication |