CN110824326A - 一种mosfet的测试方法 - Google Patents

一种mosfet的测试方法 Download PDF

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Publication number
CN110824326A
CN110824326A CN201911116747.2A CN201911116747A CN110824326A CN 110824326 A CN110824326 A CN 110824326A CN 201911116747 A CN201911116747 A CN 201911116747A CN 110824326 A CN110824326 A CN 110824326A
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CN
China
Prior art keywords
mosfet
electrode
source
test
matrix
Prior art date
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Pending
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CN201911116747.2A
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English (en)
Chinese (zh)
Inventor
陈辉
包智杰
张秀晨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Hongtai Semiconductor Technology Co Ltd
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Nanjing Hongtai Semiconductor Technology Co Ltd
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Application filed by Nanjing Hongtai Semiconductor Technology Co Ltd filed Critical Nanjing Hongtai Semiconductor Technology Co Ltd
Priority to CN201911116747.2A priority Critical patent/CN110824326A/zh
Publication of CN110824326A publication Critical patent/CN110824326A/zh
Priority to JP2020189056A priority patent/JP6996786B2/ja
Priority to JP2021199772A priority patent/JP7042542B2/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
CN201911116747.2A 2019-11-15 2019-11-15 一种mosfet的测试方法 Pending CN110824326A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201911116747.2A CN110824326A (zh) 2019-11-15 2019-11-15 一种mosfet的测试方法
JP2020189056A JP6996786B2 (ja) 2019-11-15 2020-11-13 Ｍｏｓｆｅｔのテスト方法
JP2021199772A JP7042542B2 (ja) 2019-11-15 2021-12-09 Ｍｏｓｆｅｔのテスト方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911116747.2A CN110824326A (zh) 2019-11-15 2019-11-15 一种mosfet的测试方法

Publications (1)

Publication Number Publication Date
CN110824326A true CN110824326A (zh) 2020-02-21

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CN201911116747.2A Pending CN110824326A (zh) 2019-11-15 2019-11-15 一种mosfet的测试方法

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JP (2) JP6996786B2 (ja)
CN (1) CN110824326A (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1545707A (zh) * 2001-08-25 2004-11-10 非易失性半导体存储器及其操作方法
CN201478306U (zh) * 2009-08-04 2010-05-19 沈富德 扁平式封装双场效应晶体管器件
CN101789425A (zh) * 2001-11-09 2010-07-28 株式会社半导体能源研究所 半导体元件、电路、显示器件和发光器件
CN201622323U (zh) * 2010-04-02 2010-11-03 江西联创特种微电子有限公司 小功率NPN型三极管hFE参数测试仪
CN102096036A (zh) * 2010-12-03 2011-06-15 华东光电集成器件研究所 一种集成三极管阵列电路测试装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0675091B2 (ja) * 1984-12-27 1994-09-21 富士電機株式会社 Ｍｏｓ形ｆｅｔの熱抵抗測定方法
JPH0821719B2 (ja) * 1986-02-20 1996-03-04 三菱電機株式会社 半導体装置
JPH11211786A (ja) * 1998-01-29 1999-08-06 Sony Tektronix Corp 熱抵抗測定方法
US7102358B2 (en) * 2004-06-29 2006-09-05 Intel Corporation Overvoltage detection apparatus, method, and system
JP2006147700A (ja) * 2004-11-17 2006-06-08 Sanyo Electric Co Ltd 半導体装置
JP5261636B2 (ja) * 2006-10-27 2013-08-14 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP6132860B2 (ja) * 2015-01-22 2017-05-24 力晶科技股▲ふん▼有限公司 トランジスタテスト回路及び方法、半導体記憶装置、並びに半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1545707A (zh) * 2001-08-25 2004-11-10 非易失性半导体存储器及其操作方法
CN101789425A (zh) * 2001-11-09 2010-07-28 株式会社半导体能源研究所 半导体元件、电路、显示器件和发光器件
CN201478306U (zh) * 2009-08-04 2010-05-19 沈富德 扁平式封装双场效应晶体管器件
CN201622323U (zh) * 2010-04-02 2010-11-03 江西联创特种微电子有限公司 小功率NPN型三极管hFE参数测试仪
CN102096036A (zh) * 2010-12-03 2011-06-15 华东光电集成器件研究所 一种集成三极管阵列电路测试装置

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JP2022031892A (ja) 2022-02-22
JP2021081427A (ja) 2021-05-27
JP7042542B2 (ja) 2022-03-28
JP6996786B2 (ja) 2022-01-17

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