CN110800092A - 半导体装置的制造方法及层叠片 - Google Patents

半导体装置的制造方法及层叠片 Download PDF

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Publication number
CN110800092A
CN110800092A CN201780092553.6A CN201780092553A CN110800092A CN 110800092 A CN110800092 A CN 110800092A CN 201780092553 A CN201780092553 A CN 201780092553A CN 110800092 A CN110800092 A CN 110800092A
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CN
China
Prior art keywords
resin composition
layer
composition layer
semiconductor device
cured
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201780092553.6A
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English (en)
Chinese (zh)
Inventor
根津裕介
渡边康贵
杉野贵志
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Lintec Corp
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Lintec Corp
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Publication of CN110800092A publication Critical patent/CN110800092A/zh
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)
CN201780092553.6A 2017-08-04 2017-08-04 半导体装置的制造方法及层叠片 Withdrawn CN110800092A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/028335 WO2019026267A1 (ja) 2017-08-04 2017-08-04 半導体装置の製造方法および積層シート

Publications (1)

Publication Number Publication Date
CN110800092A true CN110800092A (zh) 2020-02-14

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CN201780092553.6A Withdrawn CN110800092A (zh) 2017-08-04 2017-08-04 半导体装置的制造方法及层叠片

Country Status (5)

Country Link
JP (1) JP7022133B2 (ko)
KR (1) KR20200033222A (ko)
CN (1) CN110800092A (ko)
TW (1) TWI758451B (ko)
WO (1) WO2019026267A1 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035538A (zh) * 2011-09-28 2013-04-10 日东电工株式会社 半导体装置的制造方法
JP2013251368A (ja) * 2012-05-31 2013-12-12 Hitachi Chemical Co Ltd 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置
CN103579454A (zh) * 2012-07-17 2014-02-12 日东电工株式会社 半导体装置的制造方法
JP2017045891A (ja) * 2015-08-27 2017-03-02 日立化成株式会社 半導体装置及びそれを製造する方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5042297Y1 (ko) 1968-10-08 1975-12-01
JP5001957B2 (ja) * 2009-01-27 2012-08-15 パナソニック株式会社 半導体装置及び半導体装置実装基板
JP2016096308A (ja) 2014-11-17 2016-05-26 日東電工株式会社 半導体装置の製造方法
JP2016213321A (ja) * 2015-05-08 2016-12-15 日立化成株式会社 半導体装置の製造方法及び半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035538A (zh) * 2011-09-28 2013-04-10 日东电工株式会社 半导体装置的制造方法
JP2013251368A (ja) * 2012-05-31 2013-12-12 Hitachi Chemical Co Ltd 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置
CN103579454A (zh) * 2012-07-17 2014-02-12 日东电工株式会社 半导体装置的制造方法
JP2017045891A (ja) * 2015-08-27 2017-03-02 日立化成株式会社 半導体装置及びそれを製造する方法

Also Published As

Publication number Publication date
JPWO2019026267A1 (ja) 2020-06-18
WO2019026267A1 (ja) 2019-02-07
JP7022133B2 (ja) 2022-02-17
TWI758451B (zh) 2022-03-21
KR20200033222A (ko) 2020-03-27
TW201911430A (zh) 2019-03-16

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