CN110767648A - 一种加铜柱型的ssd存储芯片封装结构及其封装方法 - Google Patents

一种加铜柱型的ssd存储芯片封装结构及其封装方法 Download PDF

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CN110767648A
CN110767648A CN201911039112.7A CN201911039112A CN110767648A CN 110767648 A CN110767648 A CN 110767648A CN 201911039112 A CN201911039112 A CN 201911039112A CN 110767648 A CN110767648 A CN 110767648A
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庞宝龙
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Huatian Technology Xian Co Ltd
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Abstract

一种加铜柱型的SSD存储芯片封装结构及其封装方法，封装结构包括作为载体的基板，基板的上表面贴装若干层存储芯片，通过键合导线将每层存储芯片分别与基板进行键合；基板的下表面贴装控制芯片，控制芯片通过键合导线与基板进行键合；通过基板上的焊接线路实现存储芯片与控制芯片之间信号的交互；基板的下方通过第一塑封体将基板的下表面以及控制芯片、键合导线封装在内部，控制芯片的外周设置铜柱，铜柱的一端与基板的下表面接合，另一端延伸至第一塑封体的外部，作为焊接管脚；基板的上方通过第二塑封体将基板的上表面以及存储芯片、键合导线封装在内部。本发明的存储芯片封装方法操作简单，既能够实现有效散热，又能够减小封装结构的体积。

Description

一种加铜柱型的SSD存储芯片封装结构及其封装方法
技术领域
本发明涉及芯片封装领域，具体为一种加铜柱型的SSD存储芯片封装结构及其封装方法。
背景技术
随着科技的不断发展，人们对消费类电子产品的需求也越来越高，电子产品中的存储芯片是一个关键的核心零部件，对于此芯片的封装要求也越来越高，体积小，容量大已成为一种趋势。传统的SSD封装芯片面积大，散热不好，封装尺寸难以满足客户的要求。
发明内容
本发明的目的在于针对上述现有技术中对于存储芯片的封装面积大以及散热不好的问题，提供一种加铜柱型的SSD存储芯片封装结构及其封装方法，既能够实现有效的散热，又能够减小封装结构的体积，封装过程便于操作，从而提升芯片质量，降低加工成本。
为了实现上述目的，本发明一种加铜柱型的SSD存储芯片封装结构有如下方案：
包括作为载体的基板，基板的上表面贴装若干层存储芯片，通过键合导线将每层存储芯片分别与基板进行键合；基板的下表面贴装控制芯片，控制芯片通过键合导线与基板进行键合；通过基板上的焊接线路实现存储芯片与控制芯片之间信号的交互；基板的下方通过第一塑封体将基板的下表面以及控制芯片、键合导线封装在内部，控制芯片的外周设置铜柱，铜柱的一端与基板的下表面接合，另一端延伸至第一塑封体的外部，作为焊接管脚；基板的上方通过第二塑封体将基板的上表面以及存储芯片、键合导线封装在内部。
作为优选，本发明SSD存储芯片封装结构一种实施例中，键合导线由金丝制成。
作为优选，本发明SSD存储芯片封装结构一种实施例中，相邻两层的存储芯片交错，并且所有存储芯片整体上呈之字形梯度倾斜布置。
作为优选，本发明SSD存储芯片封装结构一种实施例中，相邻两层的存储芯片之间通过DAF固型膜进行粘贴固定。
作为优选，本发明SSD存储芯片封装结构一种实施例中，各层存储芯片通过键合导线相互并联的与基板进行键合。
本发明还公开了一种加铜柱型的SSD存储芯片封装方法，包括以下步骤：
步骤一、将若干层存储芯片相互叠加贴装在基板的上表面；
步骤二、通过键合导线将每层存储芯片分别与基板进行键合；
步骤三、将基板的上表面以及存储芯片、键合导线进行塑封；
步骤四、将控制芯片贴装在基板的下表面；
步骤五、通过键合导线将控制芯片与基板进行键合，通过基板上的焊接线路实现存储芯片与控制芯片之间信号的交互；
步骤六、在控制芯片外周的基板下表面贴装若干根铜柱；
步骤七、将基板的下表面以及控制芯片键合导线、铜柱进行塑封；
步骤八、将塑封体底面进行打磨，直至露出铜柱，将铜柱作为管脚进行焊接。
作为优选，步骤一将存储芯片整体上按之字形梯度倾斜布置，通过DAF固型膜进行粘贴固定；存储芯片的粘贴固定区域以外的位置作为键合导线的连接位置。
相较于现有技术，本发明存储芯片封装结构具有如下的有益效果：采用基板作为载体，将若干层存储芯片贴装在基板的上表面，控制芯片贴装在基板的下表面，通过键合导线以及基板上的焊接线路实现存储芯片与控制芯片之间的连通，基板的上方和下方分别通过塑封体进行封装，控制芯片外周设置的铜柱，能够有效将基板上产生的热量导出。本发明的存储芯片封装结构能够减小芯片体积，并且散热良好，便于后期在使用过程中装配。
进一步的，本发明相邻两层的存储芯片交错，所有存储芯片整体上呈之字形梯度倾斜布置，这样在存储芯片多层叠加贴装的过程中预留了键合线的连接位置，便于进行连接安装。
相较于现有技术，本发明的SSD存储芯片封装方法操作简单，实施容易，能够保证存储芯片与控制芯片可靠连通，同时铜柱能够有效将基板上产生的热量导出，加工质量高。
附图说明
为了更清楚地说明本发明的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1本发明加铜柱型的SSD存储芯片封装结构示意图；
图2本发明基板的上表面贴装若干层存储芯片的结构示意图；
图3本发明存储芯片通过键合导线与基板键合的结构示意图；
图4本发明基板的上表面通过塑封体进行封装后的示意图；
图5本发明基板的下表面贴装控制芯片的结构示意图；
图6本发明控制芯片通过键合导线与基板键合的结构示意图；
图7本发明控制芯片的外周设置铜柱的结构示意图；
图8本发明基板的下表面通过塑封体进行封装后的示意图；
图9本发明塑封体底面打磨位置的示意图；
附图中：
1-第一塑封体；2-基板；3-第二塑封体；4-键合导线；5-存储芯片；6-铜柱；7-控制芯片。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。
基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下，所获得的所有其他实施例，也都属于本发明保护的范围。
参见图1，本发明一种加铜柱型的SSD存储芯片封装结构实施例，在结构上包括：作为载体的基板2，基板2的上表面贴装多层存储芯片5，通过键合导线4将每层存储芯片5分别与基板2进行键合，各层存储芯片5通过键合导线4相互并联。基板2的下表面贴装控制芯片7，控制芯片7通过键合导线4与基板2进行键合，键合导线4由金丝制成。
通过基板2上的焊接线路实现存储芯片5与控制芯片7之间信号的交互。
相邻两层的存储芯片5位置交错，所有存储芯片5整体上呈之字形梯度倾斜布置，存储芯片5之间通过DAF固型膜进行粘贴固定。基板2的下方通过第一塑封体1将基板2的下表面以及控制芯片7、键合导线4封装在内部，控制芯片7的外周设置铜柱6，铜柱6的一端与基板2的下表面接合，另一端延伸至第一塑封体1的外部，作为焊接管脚。基板2的上方通过第二塑封体3将基板2的上表面以及存储芯片5、键合导线4封装在内部。
本发明加铜柱型的SSD存储芯片的封装方法，包括以下步骤：
步骤一、将若干层存储芯片5相互叠加贴装在基板2的上表面，如图2所示；
步骤二、通过键合导线4将每层存储芯片5分别与基板2进行键合，如图3所示；
步骤三、将基板2的上表面以及存储芯片5、键合导线4进行塑封，如图4所示；
步骤四、将控制芯片7贴装在基板2的下表面，如图5所示；
步骤五、通过键合导线4将控制芯片7与基板2进行键合，通过基板2上的焊接线路实现存储芯片5与控制芯片7之间信号的交互，如图6所示；
步骤六、在控制芯片7外周的基板2下表面贴装若干根铜柱6，如图7所示；
步骤七、参见图8，将基板2的下表面以及控制芯片7、键合导线4、铜柱6进行塑封；
步骤八、参见图9，将塑封体底面进行打磨，露出铜柱6，将铜柱6作为管脚进行焊接。
本发明加铜柱型的SSD存储芯片封装结构，通过贴加铜柱和两面塑封的方式，既达到有效散热的目的，同时又减小了封装结构的体积，从而提升质量和降低成本。
以上所述仅仅是本发明的较佳实施例，并不用以对本发明的技术方案进行任何限制，本领域技术人员应当理解的是，在不脱离本发明精神和原则的前提下，该技术方案还可以进行若干简单的修改和替换，这些修改和替换也均属于本发明权利要求书确定的保护范围之内。

Claims (7)

1.一种加铜柱型的SSD存储芯片封装结构，其特征在于：包括作为载体的基板(2)，基板(2)的上表面贴装若干层存储芯片(5)，通过键合导线(4)将每层存储芯片(5)分别与基板(2)进行键合；基板(2)的下表面贴装控制芯片(7)，控制芯片(7)通过键合导线(4)与基板(2)进行键合；通过基板(2)上的焊接线路实现存储芯片(5)与控制芯片(7)之间信号的交互；基板(2)的下方通过第一塑封体(1)将基板(2)的下表面以及控制芯片(7)、键合导线(4)封装在内部，控制芯片(7)的外周设置铜柱(6)，铜柱(6)的一端与基板(2)的下表面接合，另一端延伸至第一塑封体(1)的外部，作为焊接管脚；基板(2)的上方通过第二塑封体(3)将基板(2)的上表面以及存储芯片(5)、键合导线(4)封装在内部。
2.根据权利要求1所述加铜柱型的SSD存储芯片封装结构，其特征在于：
键合导线(4)由金丝制成。
3.根据权利要求1所述加铜柱型的SSD存储芯片封装结构，其特征在于：
相邻两层的存储芯片(5)交错，所有存储芯片(5)整体上呈之字形梯度倾斜布置。
4.根据权利要求1所述加铜柱型的SSD存储芯片封装结构，其特征在于：
相邻两层的存储芯片(5)之间通过DAF固型膜进行粘贴固定。
5.根据权利要求1所述加铜柱型的SSD存储芯片封装结构，其特征在于：
各层存储芯片(5)通过键合导线(4)相互并联的与基板(2)进行键合。
6.一种加铜柱型的SSD存储芯片封装方法，其特征在于，包括以下步骤：
步骤一、将若干层存储芯片(5)相互叠加贴装在基板(2)的上表面；
步骤二、通过键合导线(4)将每层存储芯片(5)分别与基板(2)进行键合；
步骤三、将基板(2)的上表面以及存储芯片(5)、键合导线(4)进行塑封；
步骤四、将控制芯片(7)贴装在基板(2)的下表面；
步骤五、通过键合导线(4)将控制芯片(7)与基板(2)进行键合，通过基板(2)上的焊接线路实现存储芯片(5)与控制芯片(7)之间信号的交互；
步骤六、在控制芯片(7)外周的基板(2)下表面贴装若干根铜柱(6)；
步骤七、将基板(2)的下表面以及控制芯片(7)、键合导线(4)、铜柱(6)进行塑封；
步骤八、将塑封体底面进行打磨，直至露出铜柱(6)，将铜柱(6)作为管脚进行焊接。
7.根据权利要求6所述的加铜柱型的SSD存储芯片封装方法，其特征在于：步骤一将存储芯片(5)整体上按之字形梯度倾斜布置，通过DAF固型膜进行粘贴固定；
存储芯片(5)的粘贴固定区域以外的位置作为键合导线(4)的连接位置。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104538376A (zh) * 2014-12-30 2015-04-22 华天科技（西安）有限公司 一种带有铜柱的pop封装结构及其制备方法
CN107424938A (zh) * 2016-04-20 2017-12-01 力成科技股份有限公司 封装结构及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104538376A (zh) * 2014-12-30 2015-04-22 华天科技（西安）有限公司 一种带有铜柱的pop封装结构及其制备方法
CN107424938A (zh) * 2016-04-20 2017-12-01 力成科技股份有限公司 封装结构及其制造方法

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