CN110752291A - 一种侧壁电极阻变存储结构及其制备方法 - Google Patents
一种侧壁电极阻变存储结构及其制备方法 Download PDFInfo
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- CN110752291A CN110752291A CN201910882812.6A CN201910882812A CN110752291A CN 110752291 A CN110752291 A CN 110752291A CN 201910882812 A CN201910882812 A CN 201910882812A CN 110752291 A CN110752291 A CN 110752291A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 239000000463 material Substances 0.000 claims abstract description 105
- 238000000151 deposition Methods 0.000 claims description 36
- 239000007772 electrode material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 5
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- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115867123A (zh) * | 2022-12-07 | 2023-03-28 | 厦门半导体工业技术研发有限公司 | 一种半导体器件及其制造方法 |
Citations (14)
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---|---|---|---|---|
CN1622360A (zh) * | 2003-11-24 | 2005-06-01 | 三星电子株式会社 | 对于由电极孔的侧壁限定的相可变材料具有接触表面面积的相变存储器件及其形成方法 |
WO2006132045A1 (ja) * | 2005-06-10 | 2006-12-14 | Sharp Kabushiki Kaisha | 不揮発性記憶素子とその製造方法 |
CN101290968A (zh) * | 2007-04-17 | 2008-10-22 | 旺宏电子股份有限公司 | 具有侧壁接触侧电极的存储单元 |
US20100038619A1 (en) * | 2007-03-28 | 2010-02-18 | Ayuka Tada | Variable resistance element, manufacturing method thereof, and electronic device |
CN103187523A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
CN103258958A (zh) * | 2013-05-13 | 2013-08-21 | 北京大学 | 有机阻变存储器及其制备方法 |
CN103872244A (zh) * | 2012-12-14 | 2014-06-18 | 爱思开海力士有限公司 | 阻变存储器件及其制造方法 |
US20150090952A1 (en) * | 2013-09-27 | 2015-04-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Resistor memory bit-cell and circuitry and method of making the same |
US20150221700A1 (en) * | 2014-02-03 | 2015-08-06 | Sk Hynix Inc | Electronic device |
US20180082840A1 (en) * | 2016-09-20 | 2018-03-22 | The Board Of Trustees Of The Leland Stanford Junior University | Metal oxide-resistive memory using two-dimensional edge electrodes |
CN108123033A (zh) * | 2016-11-29 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | 阻变随机存储器存储单元及其制作方法、电子装置 |
US20180212147A1 (en) * | 2017-01-23 | 2018-07-26 | Sandisk Technologies Llc | Nanoparticle-based resistive memory device and methods for manufacturing the same |
CN109524544A (zh) * | 2018-10-23 | 2019-03-26 | 中国科学院微电子研究所 | 一种阻变存储器的制备方法 |
CN109920911A (zh) * | 2019-03-06 | 2019-06-21 | 中国科学院微电子研究所 | 阻变存储器的制备方法 |
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2019
- 2019-09-18 CN CN201910882812.6A patent/CN110752291B/zh active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1622360A (zh) * | 2003-11-24 | 2005-06-01 | 三星电子株式会社 | 对于由电极孔的侧壁限定的相可变材料具有接触表面面积的相变存储器件及其形成方法 |
WO2006132045A1 (ja) * | 2005-06-10 | 2006-12-14 | Sharp Kabushiki Kaisha | 不揮発性記憶素子とその製造方法 |
US20100038619A1 (en) * | 2007-03-28 | 2010-02-18 | Ayuka Tada | Variable resistance element, manufacturing method thereof, and electronic device |
CN101290968A (zh) * | 2007-04-17 | 2008-10-22 | 旺宏电子股份有限公司 | 具有侧壁接触侧电极的存储单元 |
CN103187523A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
CN103872244A (zh) * | 2012-12-14 | 2014-06-18 | 爱思开海力士有限公司 | 阻变存储器件及其制造方法 |
CN103258958A (zh) * | 2013-05-13 | 2013-08-21 | 北京大学 | 有机阻变存储器及其制备方法 |
US20150090952A1 (en) * | 2013-09-27 | 2015-04-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Resistor memory bit-cell and circuitry and method of making the same |
US20150221700A1 (en) * | 2014-02-03 | 2015-08-06 | Sk Hynix Inc | Electronic device |
US20180082840A1 (en) * | 2016-09-20 | 2018-03-22 | The Board Of Trustees Of The Leland Stanford Junior University | Metal oxide-resistive memory using two-dimensional edge electrodes |
CN108123033A (zh) * | 2016-11-29 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | 阻变随机存储器存储单元及其制作方法、电子装置 |
US20180212147A1 (en) * | 2017-01-23 | 2018-07-26 | Sandisk Technologies Llc | Nanoparticle-based resistive memory device and methods for manufacturing the same |
CN109524544A (zh) * | 2018-10-23 | 2019-03-26 | 中国科学院微电子研究所 | 一种阻变存储器的制备方法 |
CN109920911A (zh) * | 2019-03-06 | 2019-06-21 | 中国科学院微电子研究所 | 阻变存储器的制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115867123A (zh) * | 2022-12-07 | 2023-03-28 | 厦门半导体工业技术研发有限公司 | 一种半导体器件及其制造方法 |
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Inventor after: Xiao Han Inventor after: Wang Zongwei Inventor after: Cai Yimao Inventor after: Huang Ru Inventor before: Xiao Han Inventor before: Wang Zongwei Inventor before: Cai Yimao |
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Effective date of registration: 20200821 Address after: Room 101, building 1, block C, Qianjiang Century Park, ningwei street, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant after: Hangzhou Weiming Information Technology Co.,Ltd. Applicant after: Institute of Information Technology, Zhejiang Peking University Address before: Room 288-1, 857 Xinbei Road, Ningwei Town, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: Institute of Information Technology, Zhejiang Peking University Applicant before: Hangzhou Weiming Information Technology Co.,Ltd. |
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