CN110635016B - 一种miniled基板封装方法 - Google Patents
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Abstract
本发明公开了一种miniled基板封装方法,包括以下步骤:备料步骤:准备双面覆铜板,所述双面覆铜板的厚度为100~1000μm,其中单层铜箔的厚度为12~35μm;钻孔步骤:对所述双面覆铜板进行钻孔,确保所钻的钻孔贯穿所述双面覆铜板的两层铜箔;镀铜步骤:对所述双面覆铜板的钻孔孔壁进行镀铜,以使位于所述钻孔孔壁的镀铜层连接所述双面覆铜板两面的铜箔,以使所述双面覆铜板两面的铜箔形成电连接;填孔步骤:用黑色树脂或黑色油墨将所述钻孔填满;异向导电胶制作步骤所用到的黑色树脂熔化,并因表面张力包裹所述miniled芯片的侧面,从而将芯片独立包裹,实现芯片之间的相互隔离。
Description
技术领域
本发明涉及一种miniled基板封装方法。
背景技术
倒装芯片的规格越来越小,正负极的间隙最小达20μm。目前普通银浆或锡浆最小间隙只能实现正负极间隙为50μm的贴装,而且难度巨大,易造成正负极的微短路。
Miniled模组芯片数量巨大,对于传统的银浆和锡膏工艺,在生产时,因固晶时间太长,浆料的溶剂易挥发,而造成贴装的失效。
目前的Miniled模组的红、绿及蓝光芯片之间相互没有隔离,像素点之间会形成串光,造成颜色的失真,或拖尾现象,影响视觉效果。
发明内容
为了克服现有技术的不足,本发明的目的在于提供一种miniled基板封装方法,其能够实现芯片之间的隔离,避免拖尾现象及颜色失真。
本发明的目的采用如下技术方案实现:
一种miniled基板封装方法,包括以下步骤:
备料步骤:准备双面覆铜板,所述双面覆铜板的厚度为100~1000μm,其中单层铜箔的厚度为12~35μm;
钻孔步骤:对所述双面覆铜板进行钻孔,确保所钻的钻孔贯穿所述双面覆铜板的两层铜箔;
镀铜步骤:对所述双面覆铜板的钻孔孔壁进行镀铜,以使位于所述钻孔孔壁的镀铜层连接所述双面覆铜板两面的铜箔,以使所述双面覆铜板两面的铜箔形成电连接;
填孔步骤:用黑色树脂或黑色油墨将所述钻孔填满;
电路制作步骤:在双面覆铜板的两面分别制作正、反面电路,并在所述电路设置电路焊盘;
阻焊层制作步骤:用黑色阻焊油墨将所述双面覆铜板的底面涂覆,用黑色阻焊油墨将所述双面覆铜板的顶面边缘涂覆,以保护电路;
抗氧化层制作步骤:在所述电路焊盘的裸露表面镀抗氧化层;
异向导电胶制作步骤:通过黑色树脂将异向导电胶/异向导电胶膜贴附在需要贴装miniled芯片的电路焊盘;
固晶步骤:将miniled芯片转移至相应的所述电路焊盘,并将所述miniled芯片粘合在所述异向导电胶/异向导电胶膜的表面;
封装步骤:将所述miniled芯片与所述电路焊盘通过回流焊接的方式焊接在一起,回流焊接后,所述异向导电胶制作步骤所用到的黑色树脂熔化,并因表面张力包裹所述miniled芯片的侧面,而所述异向导电胶/异向导电胶膜在所述miniled芯片的底部受热熔化,实现所述miniled芯片的底部焊盘与所述基板焊盘的导通焊接。
具体地,所述双面覆铜板的树脂层为BT树脂。
具体地,所述双面覆铜板为Tg值大于150摄氏度的FR4双面覆铜板。
具体地,在所述填孔步骤中,将所述钻孔填满后,将钻孔孔口边缘处多余的树脂或油墨研磨去掉,以使所述钻孔孔口边缘处平整。
具体地,所述抗氧化层为镍金、镍钯金或OSP抗氧化膜。
具体地,所述异向导电胶/异向导电胶膜的导电粒子的球径为5~10μm,所述导电粒子采用铋-锡合金。
具体地,所述miniled芯片为miniled倒装芯片,将所述miniled倒装芯片的正、负极分别通过所述异向导电胶/异向导电胶膜来实现与基板的正负极焊盘电连接。
具体地,在所述封装步骤中:按特定的ACF或ACP回流温度曲线,对完成固晶的基板进行回流焊接。
具体地,在所述封装步骤中,通过对所述miniled芯片进行模压灌胶或印刷封胶的方式进行封装,使所述miniled芯片表面形成封装胶。
具体地,在所述异向导电胶制作步骤中,所述异向导电胶/异向导电胶膜的厚度为10~12μm。
相比现有技术,本发明的有益效果在于:
1.本发明的miniled基板封装方法能够实现芯片正、负极间隙最小为20μm的封装,而且其封装方式操作简易,能够避免出现正、负极的微短路。
2.本发明的miniled基板封装方法的粘结剂为树脂(黑色树脂),其挥发性比银浆或锡膏的溶剂的挥发性要弱,在封装的过程中,树脂较小地挥发,避免在生产过程中因粘结剂挥发而导致粘结失效。
3.本发明的miniled基板封装方法在封装步骤中,将所述miniled芯片与所述电路焊盘通过回流焊接的方式焊接在一起,回流焊接后,所述异向导电胶制作步骤所用到的黑色树脂熔化,并因表面张力包裹所述miniled芯片的侧面,从而将芯片独立包裹,实现芯片之间的相互隔离,彻底消除光的衍射,从而避免了像素点之间的相互串光,进而避免由此造成的显示颜色失真或拖尾等现象,从而能够提高miniled基板的视觉效果。
附图说明
图1为双面覆铜板的示意图;
图2为钻孔步骤的示意图;
图3为镀铜步骤的示意图;
图4为填孔步骤的示意图;
图5为电路制作步骤的示意图;
图6为阻焊层制作步骤的示意图;
图7为抗氧化层制作步骤的示意图;
图8为异向导电胶制作步骤的示意图;
图9为固晶步骤的示意图;
图10为回流焊接后的miniled基板的示意图;
图11为封装后的miniled基板的示意图。
具体实施方式
下面,结合附图以及具体实施方式,对本发明做进一步描述,需要说明的是,在不相冲突的前提下,以下描述的各实施例之间或各技术特征之间可以任意组合形成新的实施例。
一种miniled基板封装方法,包括以下步骤:
备料步骤(结合图1):准备双面覆铜板,双面覆铜板的厚度为100~1000μm,其中单层铜箔的厚度为12~35μm。具体地,双面覆铜板的树脂层为BT树脂。具体地,双面覆铜板为Tg值大于150摄氏度的FR4双面覆铜板。
钻孔步骤(结合图2):对双面覆铜板进行钻孔,确保所钻的钻孔贯穿双面覆铜板的两层铜箔。
镀铜步骤(结合图3):对双面覆铜板的钻孔孔壁进行镀铜,以使位于钻孔孔壁的镀铜层连接双面覆铜板两面的铜箔,以使双面覆铜板两面的铜箔形成电连接。
填孔步骤(结合图4):用黑色树脂或黑色油墨将钻孔填满。具体地,在填孔步骤中,将钻孔填满后,将钻孔孔口边缘处多余的树脂或油墨研磨去掉,以使钻孔孔口边缘处平整。
电路制作步骤(结合图5):在双面覆铜板的两面分别制作正、反面电路,并在所述电路设置电路焊盘。
阻焊层制作步骤(结合图6):用黑色阻焊油墨将双面覆铜板的底面涂覆,用黑色阻焊油墨将双面覆铜板的顶面边缘涂覆,以保护电路。
抗氧化层制作步骤(结合图7):在电路焊盘的裸露表面镀抗氧化层。具体地,在抗氧化层制作步骤中,抗氧化层为镍金、镍钯金或OSP抗氧化膜。
异向导电胶制作步骤(结合图8):通过黑色树脂将异向导电胶贴附在需要贴装miniled芯片的电路焊盘。具体地,在异向导电胶制作步骤中,异向导电胶的导电粒子的球径为5~10μm,导电粒子采用铋-锡合金。
固晶步骤(结合图9):将miniled芯片转移至相应的电路焊盘,并将miniled芯片粘合在所述异向导电胶的表面。具体地,在固晶步骤中,miniled芯片为miniled倒装芯片,将miniled倒装芯片的正、负极分别通过异向导电胶来实现与基板的正、负极焊盘电连接,实现导通。
封装步骤(结合图10、图11):将miniled芯片与电路焊盘通过回流焊接的方式焊接在一起,回流焊接后,异向导电胶制作步骤所用到的黑色树脂熔化,并因表面张力包裹miniled芯片的侧面,而异向导电胶膜在miniled芯片的底部熔化,实现miniled芯片的底部焊盘与基板焊盘的导通焊接。具体地,在封装步骤中,按特定的ACF或ACP回流温度曲线,对完成固晶的基板进行回流焊接。具体地,在封装步骤中,通过对miniled芯片进行模压灌胶或印刷封胶的方式进行封装,使miniled芯片表面形成封装胶。
上述实施方式仅为本发明的优选实施方式,不能以此来限定本发明保护的范围,本领域的技术人员在本发明的基础上所做的任何非实质性的变化及替换均属于本发明所要求保护的范围。
Claims (9)
1.一种miniled基板封装方法,其特征在于,包括以下步骤:
备料步骤:准备双面覆铜板,所述双面覆铜板的厚度为100~1000μm,其中单层铜箔的厚度为12~35μm;
钻孔步骤:对所述双面覆铜板进行钻孔,确保所钻的钻孔贯穿所述双面覆铜板的两层铜箔;
镀铜步骤:对所述双面覆铜板的钻孔孔壁进行镀铜,以使位于所述钻孔孔壁的镀铜层连接所述双面覆铜板两面的铜箔,以使所述双面覆铜板两面的铜箔形成电连接;
填孔步骤:用黑色树脂或黑色油墨将所述钻孔填满;
电路制作步骤:在双面覆铜板的两面分别制作正、反面电路,并在所述电路设置电路焊盘;
阻焊层制作步骤:用黑色阻焊油墨将所述双面覆铜板的底面涂覆,用黑色阻焊油墨将所述双面覆铜板的顶面边缘涂覆,以保护电路;
抗氧化层制作步骤:在所述电路焊盘的裸露表面镀抗氧化层;
异向导电胶制作步骤:通过黑色树脂将异向导电胶/异向导电胶膜贴附在需要贴装miniled芯片的电路焊盘;
固晶步骤:将miniled芯片转移至相应的所述电路焊盘,并将所述miniled芯片粘合在所述异向导电胶/异向导电胶膜的表面;
封装步骤:将所述miniled芯片与所述电路焊盘通过回流焊接的方式焊接在一起,回流焊接后,所述异向导电胶制作步骤所用到的黑色树脂熔化,并因表面张力包裹所述miniled芯片的侧面,而所述异向导电胶/异向导电胶膜在所述miniled芯片的底部受热熔化,以将所述miniled芯片的底部焊盘与所述基板的焊盘导通焊接。
2.根据权利要求1所述的miniled基板封装方法,其特征在于:所述双面覆铜板的树脂层为BT树脂。
3.根据权利要求1所述的miniled基板封装方法,其特征在于:所述双面覆铜板为Tg值大于150摄氏度的FR4双面覆铜板。
4.根据权利要求1所述的miniled基板封装方法,其特征在于:在所述填孔步骤中,将所述钻孔填满后,将钻孔孔口边缘处多余的树脂或油墨研磨去掉,以使所述钻孔孔口边缘处平整。
5.根据权利要求1所述的miniled基板封装方法,其特征在于:所述抗氧化层为镍金、镍钯金或OSP抗氧化膜。
6.根据权利要求1所述的miniled基板封装方法,其特征在于:所述异向导电胶/异向导电胶膜的导电粒子的球径为5~10μm,所述导电粒子采用铋-锡合金。
7.根据权利要求1所述的miniled基板封装方法,其特征在于:所述miniled芯片为miniled倒装芯片,将所述miniled倒装芯片的正、负极分别通过所述异向导电胶/异向导电胶膜来实现与基板的正负极焊盘电连接。
8.根据权利要求1所述的miniled基板封装方法,其特征在于:在所述封装步骤中,通过对所述miniled芯片进行模压灌胶或印刷封胶的方式进行封装,使所述miniled芯片表面形成封装胶。
9.根据权利要求1所述的miniled基板封装方法,其特征在于:在所述异向导电胶制作步骤中,所述异向导电胶/异向导电胶膜的厚度为10~12μm。
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