CN110581964B - 摄像器件和电子装置 - Google Patents

摄像器件和电子装置 Download PDF

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Publication number
CN110581964B
CN110581964B CN201910870831.7A CN201910870831A CN110581964B CN 110581964 B CN110581964 B CN 110581964B CN 201910870831 A CN201910870831 A CN 201910870831A CN 110581964 B CN110581964 B CN 110581964B
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pixel
photodiode
pixels
image pickup
pickup device
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CN201910870831.7A
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Chinese (zh)
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CN110581964A (zh
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山本敦彦
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/672—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction between adjacent sensors or output registers for reading a single image
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
CN201910870831.7A 2013-10-31 2014-10-23 摄像器件和电子装置 Expired - Fee Related CN110581964B (zh)

Applications Claiming Priority (3)

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JP2013-226299 2013-10-31
JP2013226299A JP6180882B2 (ja) 2013-10-31 2013-10-31 固体撮像装置、信号処理装置、および電子機器
CN201410572947.XA CN104600085B (zh) 2013-10-31 2014-10-23 固态摄像器件、信号处理器件和电子装置

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CN110581964A CN110581964A (zh) 2019-12-17
CN110581964B true CN110581964B (zh) 2022-03-18

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CN201910870831.7A Expired - Fee Related CN110581964B (zh) 2013-10-31 2014-10-23 摄像器件和电子装置
CN201910870491.8A Expired - Fee Related CN110545389B (zh) 2013-10-31 2014-10-23 摄像器件
CN201410572947.XA Expired - Fee Related CN104600085B (zh) 2013-10-31 2014-10-23 固态摄像器件、信号处理器件和电子装置
CN201910870756.4A Expired - Fee Related CN110620124B (zh) 2013-10-31 2014-10-23 摄像器件、信号处理器件和电子装置

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CN201910870491.8A Expired - Fee Related CN110545389B (zh) 2013-10-31 2014-10-23 摄像器件
CN201410572947.XA Expired - Fee Related CN104600085B (zh) 2013-10-31 2014-10-23 固态摄像器件、信号处理器件和电子装置
CN201910870756.4A Expired - Fee Related CN110620124B (zh) 2013-10-31 2014-10-23 摄像器件、信号处理器件和电子装置

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JP (1) JP6180882B2 (OSRAM)
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JP6575926B2 (ja) * 2015-06-12 2019-09-18 リコーイメージング株式会社 撮影装置
JP2017055309A (ja) 2015-09-10 2017-03-16 キヤノン株式会社 撮像装置及びその制御方法
JP2017055308A (ja) * 2015-09-10 2017-03-16 キヤノン株式会社 撮像装置及びその制御方法
CN105578005B (zh) * 2015-12-18 2018-01-19 广东欧珀移动通信有限公司 图像传感器的成像方法、成像装置和电子装置
JP2018157371A (ja) * 2017-03-17 2018-10-04 キヤノン株式会社 撮像装置及び欠陥画素の補正方法
KR102354991B1 (ko) 2017-05-24 2022-01-24 삼성전자주식회사 픽셀 회로 및 이를 포함하는 이미지 센서
JP2019012968A (ja) * 2017-06-30 2019-01-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP2020108061A (ja) 2018-12-28 2020-07-09 キヤノン株式会社 撮像装置及び撮像システム
KR102787832B1 (ko) * 2020-05-22 2025-03-31 에스케이하이닉스 주식회사 이미지 센싱 장치
JP7499695B2 (ja) * 2020-12-24 2024-06-14 ゼタテクノロジーズ株式会社 固体撮像装置、固体撮像装置の信号処理方法、および電子機器
US12237349B2 (en) 2021-05-28 2025-02-25 Samsung Electronics Co., Ltd. Image sensor and image signal processing method

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Also Published As

Publication number Publication date
US20200029056A1 (en) 2020-01-23
CN104600085B (zh) 2019-09-13
CN110545389A (zh) 2019-12-06
US20210218916A1 (en) 2021-07-15
US10992890B2 (en) 2021-04-27
US10462430B2 (en) 2019-10-29
JP6180882B2 (ja) 2017-08-16
CN110581964A (zh) 2019-12-17
CN110545389B (zh) 2022-03-18
CN110620124B (zh) 2023-07-18
US20150116566A1 (en) 2015-04-30
CN104600085A (zh) 2015-05-06
CN110620124A (zh) 2019-12-27
JP2015088947A (ja) 2015-05-07

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