CN110577471A - 电致发光化合物和包括该电致发光化合物的电致发光装置 - Google Patents

电致发光化合物和包括该电致发光化合物的电致发光装置 Download PDF

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CN110577471A
CN110577471A CN201910500620.4A CN201910500620A CN110577471A CN 110577471 A CN110577471 A CN 110577471A CN 201910500620 A CN201910500620 A CN 201910500620A CN 110577471 A CN110577471 A CN 110577471A
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CN110577471B (zh
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刘璇根
朴熙俊
徐正大
玄瑞镕
金河延
尹石根
金淳基
李寅浩
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P & H Tech Co Ltd
LG Display Co Ltd
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Abstract

本发明提供一种下式1和式2之一的电致发光化合物。本发明的另一方面是一种电致发光装置,包括:第一电极;面向所述第一电极的第二电极;和位于所述第一电极和所述第二电极之间的至少一个有机材料层;其中所述至少一个有机材料层中的一个或多个包括所述的电致发光化合物。

Description

电致发光化合物和包括该电致发光化合物的电致发光装置
相关申请的交叉引用
本申请要求于2018年6月11日在韩国提交的韩国专利申请第10-2018-0066766号的权益,通过引用将上述专利申请作为整体结合在此。
技术领域
本公开内容涉及电致发光化合物,且更具体地,涉及具有改善的寿命和发光效率的电致发光化合物以及包括该电致发光化合物的电致发光装置。
背景技术
电致发光(EL)装置形成在透明基板上,并且可以在比操作其他显示装置(例如等离子体显示面板)所需的电压更低的电压(例如,10V或更低的电压)下操作。此外,EL装置具有较低的功耗和优异的色纯度。此外,由于EL装置可以发射红光、绿光和蓝光,因此EL装置被开发为下一代显示装置。
为了提供上述优点,需要具有高可靠性和高效率的材料,包括例如空穴注入材料、空穴传输材料、发光材料、电子传输材料或电子注入材料。然而,现有技术中的材料尚不充分,仍需要新材料。
近来,不仅需要藉由改变有机层中的材料来增强EL装置的性能,还需要藉由优化阳极与阴极之间的光学厚度来提高色纯度和发光效率。例如,在电极上可使用封盖层(capping layer)以提高EL装置的色纯度和发光效率。
需要开发用于增强EL装置的发光性能的装置结构和新材料。
发明内容
本发明涉及一种基本上消除了与相关传统技术的限制和缺点相关的一个或多个问题的EL化合物和包括该EL化合物的EL装置。
在下面的描述中阐明了本公开内容的附加特征和优点,这些特征和优点根据描述将显而易见,或者通过本发明的实践而清楚。通过本文以及附图中描述的特征可以实现和获得本发明的目的和其他优点。
为了实现根据本发明实施方式的目的的这些和其他优点,如本文所述,本发明的一个方面是式1或式2的电致发光化合物:[式1][式2]其中X1至X4的每一个独立地为N或CR’,其中R和R’的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组,其中L1和L2的每一个独立地选自单键、取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基,并且其中Ar1和Ar2的每一个独立地选自由C6至C20芳基和C3至C30杂芳基构成的组。
本发明的另一方面是一种电致发光装置,包括:第一电极;面向第一电极的第二电极;以及位于第一电极和第二电极之间的至少一个有机材料层,其中所述至少一个有机材料层中的一个或多个包括所述电致发光化合物。
应当理解,前面的一般性描述和下面的详细描述都是示例性的和解释性的,意在对要求保护的本发明提供进一步的解释。
具体实施方式
现在将详细参照一些实施例和优选实施方式。
本公开内容的电致发光(EL)化合物由式1或式2表示。EL化合物被包括在EL装置的空穴传输层(HTL)中,使得EL装置的性质(例如发光效率、驱动特性或寿命)得到改善。此外,EL化合物可被包括在光效率增强层中,该光效率增强层形成在下电极或上电极的与EL装置的有机层相对的一侧上,从而使EL装置的光效率得到显著改善。结果,包括EL化合物的EL装置在发光效率、驱动电压、色纯度和寿命方面具有优势。
[式1]
[式2]
在式1和式2中,X1至X4的每一个独立地为N或CR’。R和R’的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组。
L1和L2的每一个独立地选自单键、取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基。例如,L1和L2的每一个可选自式3a和式3b。
Ar1和Ar2的每一个独立地选自由C6至C20芳基、和C3至C30杂芳基构成的组。
Ar选自由取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基构成的组。例如,Ar可以是式4。
[式4]
在式3a、式3b和式4中,X5至X7的每一个独立地为N或CR1。Y1和Y2的每一个独立地选自单键、O、S、Se、-R4-Si-R2-、R5-C-R3-。R1、R2、R3、R4和R5的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组。
“取代的或未取代的”中的术语“取代的”可以表示L1、L2、Ar、Ar1和Ar2的每一个可以进一步被至少一个取代基取代。在这种情况下,取代基可选自由氘、氰基、卤素、氨基、羟基、硝基、C1至C10烷基、C1至C10卤代烷基、C6至C20芳基、C3至C30杂芳基、C1至C10烷氧基、C1至C10烷基甲硅烷基、和C6至C20芳基甲硅烷基构成的组。
在本公开内容中,取代基的示例可以如下,但不限于此。
在本公开内容中,烷基可具有直链或支链结构。例如,烷基可选自由甲基、乙基、丙基、正丙基、异丙基、丁基、正丁基、异丁基、叔丁基、仲丁基、1-甲基-丁基、1-乙基-丁基、戊基、正戊基、异戊基、新戊基、叔戊基、己基、正己基、1-甲基-戊基、和2-甲基-戊基构成的组,但不限于此。
芳基可具有单环或多环结构。例如,芳基可选自由苯基、联苯基、三联苯基、芪基、萘基、蒽基、菲基、芘基、苝基、并四苯基、基、芴基、次三苯基(triphenylenyl)、和荧蒽基,但不限于此。
杂芳基可包括杂原子,例如O、N或S。例如,杂芳基可选自由噻吩基、呋喃基、吡咯基、咪唑基、噻唑基、恶唑基,恶二唑基、三唑基、吡啶基、联吡啶基、嘧啶基、三嗪基、吖啶基、哒嗪基、吡嗪基、喹啉基、喹唑啉基、喹喔嗪基、酞嗪基、吡啶并嘧啶基、吡啶并吡嗪基、吡嗪并吡嗪基、异喹啉基、吲哚基、咔唑基、苯并恶唑基、苯并咪唑基、苯并噻唑基、苯并咔唑基、苯并噻吩基、二苯并噻吩基、苯并呋喃基、二苯并呋喃基、菲咯啉基、噻唑基、异恶二唑基、恶二唑基、噻二唑基、和吩噻嗪基构成的组,但不限于此。
芳基甲硅烷基中的芳基可以与上述芳基相同,卤素可以是氟、氯、溴或碘。
甲硅烷基可选自由三甲基甲硅烷基、三乙基甲硅烷基、叔丁基二甲基甲硅烷基、乙烯基-二甲基甲硅烷基、丙基-二甲基甲硅烷基、三苯基甲硅烷基、二苯基甲硅烷基、和苯基甲硅烷基构成的组,但不限于此。
作为取代基的卤素可以是氟、氯或溴。
由于结构上的区别,本公开内容的式1或式2的EL化合物可用于EL装置的有机层。例如,作为有机化合物的EL化合物可以用作空穴传输材料或在EL装置的电极侧形成的光效率增强层的材料。
例如,式1或式2的EL化合物可以是式5的化合物之一,但不限于此。
[式5]
如上所述,本公开内容的EL化合物由于结构和取代基而具有特定的性质。例如,藉由将在空穴注入材料、空穴传输材料、发光材料或电子传输材料中所包括的取代基进行取代为本公开内容的EL化合物,EL化合物可以提供所需的性质。具体地,EL化合物可以在有或没有其他化合物的情况下用于空穴传输材料。此外,EL化合物可用于光效率增强层,其可被称为封盖层(CPL)。
EL化合物可以通过常规方法应用于EL装置。
根据示例性实施方式的EL装置可具有包括第一电极、第二电极、和二者之间的有机材料层的结构。除用于有机材料层的EL化合物之外,传统的制造方法和材料可用于EL装置。
EL装置的有机材料层可具有单层结构或包括至少两层的多层结构。例如,有机材料层可包括空穴注入层(HIL)、空穴传输层(HTL)、发光材料层(EML)、电子传输层(ETL)、和电子注入层(EIL),但不限于此。有机材料层可进一步包括电子阻挡层(EBL)和空穴阻挡层(HBL)的至少一者。有机材料层可包括比上述多层结构更少或更多的层。
因此,在本公开内容的EL装置中,有机材料层可包括空穴传输层和空穴注入传输层的至少一者,并且空穴传输层和空穴注入层的至少一者可包括式1或式2的EL化合物。
EL装置可包括基板、作为阳极的第一电极、有机材料层、作为阴极的第二电极、和光效率增强层。光效率增强层可以形成在底部发光型EL装置中的第一电极的下表面上,或者可以形成在顶部发光型EL装置中的第二电极的上表面上。
在顶部发光型EL装置中,来自发光材料层的光通过阴极(即第二电极)发射并穿过光效率增强层(即封盖层(CPL)),光效率增强层包括具有相对较高折射率的本公开内容的化合物,使得光的波长得到放大(增加)并且光效率得到改善。此外,在底部发光型EL装置中,光效率增强层包括本公开内容的化合物,藉由相同的原理,使得提高光效率。
将更详细地进一步解释EL装置的有机材料层的结构。
EL装置可通过以下方法来制造:使用诸如溅射、电子束蒸发、物理气相沉积(PVD)之类的沉积方法在基板上沉积金属、具有导电性的金属氧化物或其合金来形成阳极;在阳极上形成包括空穴注入层、空穴传输层、发光材料层和电子传输层的有机材料层;和在有机材料层上沉积能够用作阴极的材料。
或者,可以通过顺序地沉积阴极材料、有机材料和阳极材料来制造EL装置。有机材料层可以是包括空穴注入层、空穴传输层、发光材料层和电子传输层在内的多层结构,但不限于此。有机材料层可以是单层结构。此外,有机材料层可以通过例如旋涂工艺、浸涂工艺、刮刀工艺、丝网印刷工艺、喷墨印刷工艺或热转移工艺的溶液工艺形成。
用于阳极的材料可具有相对较高的功函,以促进空穴注入到有机材料层。例如,用于阳极的材料可以是金属,诸如钒、铬、铜、锌或金;它们的合金;金属氧化物,诸如氧化锌、氧化铟、氧化铟锡(ITO)或氧化铟锌(IZO);金属和金属氧化物的组合,诸如ZnO:Al或SnO2:Sb;和导电聚合物,诸如聚(3-甲基噻吩)、聚[3,4-(乙烯-1,2-二氧基)噻吩](PEDT)、聚吡咯或聚苯胺,但不限于此。
用于阴极的材料可具有相对较低的功函,以促进电子注入到有机材料层。例如,用于阴极的材料可以是金属,诸如镁、钙、钠、钾、钛、铟、钇、锂、钆、铝、银、锡或铅;它们的合金;或多结构材料,诸如LiF/Al或LiO2/Al,但不限于此。
以低电压有效地从阳极接收空穴的空穴注入材料用于空穴注入层。空穴注入材料的最高占据分子轨道(HOMO)介于阳极的功函与相邻有机材料层的HOMO之间。例如,空穴注入材料可以是金属卟啉、低聚噻吩、芳胺基有机材料、六腈六氮杂苯并菲、喹吖啶酮基有机材料、苝基有机材料、蒽醌、聚苯胺基导电聚合物、或聚噻吩基导电聚合物,但不限于此。
从空穴注入层或阳极接收空穴并将空穴提供到发光材料层中的空穴传输材料用于空穴传输层。即,空穴传输材料具有高的空穴迁移率。例如,空穴传输材料可以是芳胺基有机材料、导电聚合物、包含共轭部分和非共轭部分的嵌段共聚物、或本公开内容的化合物。具体地,空穴传输层包括本公开内容的化合物,使得EL装置的性质(例如,驱动电压、发光效率和寿命)得到进一步改善。
将分别来自空穴传输层和电子传输层的空穴和电子结合在一起并发射可见光的发光材料用于发光材料层。发光材料可以是荧光化合物或磷光化合物。例如,发光材料可以是8-羟基-喹啉-铝配合物(Alq3)、咔唑基化合物、二聚的苯乙烯基化合物、BAlq、10-羟基-苯并喹啉金属化合物、苯并恶唑基化合物、苯并噻唑基化合物、苯并咪唑基化合物、聚(对苯基次乙烯)基聚合物、螺环化合物、聚芴或红荧烯,但不限于此。
将电子从阴极有效地提供到发光材料层中的电子传输材料用于电子传输层。即,电子传输材料具有高的电子迁移率。例如,电子传输材料可以是Alq3、有机自由基化合物、或羟基黄酮-金属配合物,但不限于此。
根据EL装置中的材料,本公开内容的EL装置可以是顶部发光型、底部发光型或双面发光型。
此外,本公开内容的EL化合物可以用于有机电子装置,诸如有机太阳能电池、有机光导体或有机晶体管,其原理与EL装置相同。
1.化合物3的合成
将甲苯(300mL)加入到4-(萘-2-基)苯胺(10g,0.045mol,Mascot.)、4-碘联苯(26.82g,0.95mol,sigma aldrich)、叔丁醇钠(17.53g,0.18mol,sigma aldrich)、作为催化剂的Pd(dba)2(1.31g,0.0023mol,sigma aldrich)、和三叔丁基膦(0.92g,0.0046mol,sigma aldrich)的混合物中,并在100℃的温度下搅拌4小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物3(18g,收率:75.3%)。
H-NMR(200MHz,CDCl3):δppm,1H(7.92/d,7.73/d,7.58/s)2H(8.00/d,7.59/m,7.41/m)4H(7.52/d,7.51/m)6H(7.54/d,6.69/d),LC/MS:m/z=523[(M+1)+]
2.化合物9的合成
(1)化合物9-1
将甲苯(300mL)加入到2-(4-溴苯基)萘(10g,0.045mol,TCI)、4-(萘-2-基)苯胺(14.05g,0.050mol,Mascot.)、叔丁醇钠(8.77g,0.091mol,sigma aldrich)、Pd(dba)2(1.31g,0.0023mol,sigma aldrich)、和三叔丁基膦(0.92g,0.0046mol,sigma aldrich)的混合物中,并在100℃的温度下搅拌4小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物9-1(14.4g,收率:74.9%)。
(2)化合物9
将甲苯(200mL)加入到化合物9-1(10g,0.023mol)、4-碘联苯(7.31g,0.026mol,sigma aldrich)、叔丁醇钠(4.56g,0.047mol,sigma aldrich)、Pd(dba)2(0.68g,0.0012mol,sigma aldrich)、和三叔丁基膦(0.48g,0.0024mol,sigma aldrich)的混合物中,并在100℃的温度下搅拌5小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物9(10.2g,收率:74.9%)。
H-NMR(200MHz,CDCl3):δppm,1H(7.41/m)2H(7.92/d,7.73/d,7.58/d,7.52/d,7.51/m)4H(8.00/d,7.59/m)6H(7.54/d,6.69/d),LC/MS:m/z=573[(M+1)+]
3.化合物18的合成
(1)化合物18-1
将甲苯(300mL)加入到3-溴二苯并呋喃(20g,0.081mol,TCI)、4-氨基联苯(16.44g,0.097mol,sigma aldrich)、叔丁醇钠(15.56g,0.16mol,sigma aldrich)、Pd(dba)2(2.33g,0.004mol,sigma aldrich)和三叔丁基膦(1.64g,0.008mol,sigmaaldrich)的混合物中,并在100℃的温度下搅拌3小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物18-1(19.2g,收率:70.7%)。
(2)化合物18
将甲苯(150mL)加入到2-(4-溴苯基)萘(10g,0.035mol,TCI)、化合物18-1(13.03g,0.038mol)、叔丁醇钠(6.79g,0.070mol,sigma aldrich)、Pd(dba)2(1.02g,0.0018mol,sigma aldrich)、和三叔丁基膦(0.71g,0.0035mol,sigma aldrich)的混合物中,并在100℃的温度下搅拌12小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物18(14.4g,收率:75.8%)。
H-NMR(200MHz,CDCl3):δppm,1H(7.92/d,7.89/d,7.73/d,7.66/d,7.64/d,7.58/s,7.43/s,7.41/m,7.38/m,7.32/m,6.33/d)2H(8.00/d,7.59/m,7.52/d,7.51/m)4H(7.54/d,6.69/d),LC/MS:m/z=537[(M+1)+]
4.化合物51的合成
(1)化合物51-1
将甲苯(150mL)加入到4-溴联苯(10g,0.040mol,sigma aldrich)、4-氨基联苯(7.53g,0.044mol,sigma aldrich)、叔丁醇钠(7.78g,0.081mol,sigma aldrich)、Pd(dba)2(1.16g,0.002mol,sigma aldrich)、和三叔丁基膦(0.82g,0.004mol,sigmaaldrich)的混合物中,并在100℃的温度下搅拌5小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物51-1(10.5g,收率:80.7%)。
(2)化合物51-2
将甲苯(150mL)和水(40mL)加入到2,7-二溴-9,9-二甲基-9H-芴(10g,0.039mol,sigma aldrich)、2-萘基硼酸(7.51g,0.047mol,sigma aldrich)、碳酸钾(16.45g,0.12mol,sigma aldrich)、和Pd(PPh3)4(2.29g,0.002mol,sigma aldrich)的混合物中,并在60℃的温度下搅拌4小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物51-2(12g,收率:75.7%)。
(3)化合物51
将甲苯(150mL)加入到化合物51-2(10g,0.025mol)、化合物51-1(8.85g,0.027mol)、叔丁醇钠(4.81g,0.050mol,sigma aldrich)、Pd(dba)2(0.72g,0.0013mol,sigma aldrich)、和三叔丁基膦(0.51g,0.0025mol,sigma aldrich)的混合物中,并在100℃的温度下搅拌12小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物51(12g,收率:74.8%)。
H-NMR(200MHz,CDCl3):δppm,1H(7.93/d,7.92/d,7.77/s,7.73/d,7.63/d,7.62/d,7.58/s,6.75/s,6.58/d)2H(8.00/d,7.59/m,7.41/m)3H(6H(1.72/s)4H(7.54/d,7.52/d,7.51/m,6.69/d)6H(1.72/s),LC/MS:m/z=639[(M+1)+]
5.化合物71的合成
(1)化合物71-1
将甲苯(200mL)和水(50mL)加入到2,4,6-三碘吡啶(10g,0.028mol,Mascot.)、6-溴-3-吡啶基硼酸(18.34g,0.09mol,sigma aldrich)、碳酸钾(27.48g,0.0198mol,sigmaaldrich)、和Pd(PPh3)4(1.64g,0.0014mol,sigma aldrich)的混合物中,并在60℃的温度下搅拌8小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物71-1(12g,收率:77.2%)。
(2)化合物71
将甲苯(200mL)和水(50mL)加入到化合物71-1(10g,0.018mol)、2-萘基硼酸(10.06g,0.058mol,sigma aldrich)、碳酸钾(17.69g,0.128mol,sigma aldrich)、和Pd(PPh3)4(1.06g,0.0009mol,sigma aldrich)的混合物中,并在60℃的温度下搅拌8小时。反应完成后,通过对混合物进行萃取和柱精制,得到化合物71(9.3g,收率:73.8%)。
H-NMR(200MHz,CDCl3):δppm,1H(8.78/s,8.03/d,7.69/d)2H(9.29/s,8.62/s,8.20/d,8.06/d)3H(8.85/s,8.38/d,7.95/d)6H(8.00/d,7.59/m),LC/MS:m/z=688[(M+1)+]
[装置]
在玻璃基板上形成ITO透明电极,并将其图案化为具有2mm×2mm的发光面积。清洁包括ITO透明电极的基板。将基板装入基础压力为1×10-6托的真空室中,并如下沉积有机材料和金属。
本公开内容的化合物用于空穴传输层,并制造具有以下结构的蓝色EL装置:ITO;HIL(式6,5nm);HTL(100nm);EBL(式7,10nm);EML(主体(式8):掺杂剂(式9),20nm);ETL(式10:Liq(50重量%掺杂),30nm);EIL(LiF,1nm);和Al(100nm)。
[实施例1至实施例9(Ex1至Ex9)]
化合物3、9、18、23、32、45、51、93和95用于形成HTL。
[比较例(Ref)]
式11的化合物用于形成HTL。
[式6]
[式7]
[式8]
[式9]
[式10]
[式11]
通过源表(型号237,Keithley)和亮度计(PR-650,Photo Research)测量实施例1至实施例9和比较例的EL装置的特性,例如驱动电压(V)、电流效率(cd/A)、量子效率(QE)和色坐标指数(CIEx,CIEy),并在表1中列出。电流密度为10mA/cm2的电压被定义为驱动电压。
表1
V cd/A QE(%) CIEx CIEy
实施例1 3.94 7.87 6.70 0.144 0.153
实施例2 4.02 7.77 6.58 0.144 0.154
实施例3 4.13 7.64 6.42 0.144 0.155
实施例4 4.20 7.39 6.10 0.145 0.156
实施例5 4.04 7.78 6.58 0.144 0.154
实施例6 4.16 7.48 6.20 0.145 0.155
实施例7 4.22 7.40 6.12 0.145 0.155
实施例8 4.17 7.51 6.25 0.144 0.154
实施例9 4.19 7.45 6.20 0.145 0.154
参考 4.20 6.20 5.10 0.145 0.156
如表1中所示,与比较例的EL装置相比,实施例1至实施例9的在HTL中包括所述化合物的EL装置的发光特性(例如发光效率和量子效率)显著更优。
在不脱离本发明的精神或范围的情况下,本发明可进行各种修改和变化,这对于本领域普通技术人员来说是显而易见的。因而,本发明意在覆盖落入所附权利要求范围及其等效范围内的本发明的修改和变化。

Claims (20)

1.一种电致发光化合物,其为式1或式2:
[式1]
[式2]
其中X1至X4的每一个独立地为N或CR’,
其中R和R’的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组,
其中L1和L2的每一个独立地选自单键、取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基,
其中Ar选自由取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基构成的组,并且
其中Ar1和Ar2的每一个独立地选自由C6至C20芳基和C3至C30杂芳基构成的组。
2.根据权利要求1所述的电致发光化合物,其中L1和L2的每一个选自式3a和式3b,并且Ar由式4表示:
[式4]
其中X5至X7的每一个独立地为N或CR1
其中Y1和Y2独立地选自单键、O、S、Se、-R4-Si-R2-、R5-C-R3-,并且
其中R1、R2、R3、R4和R5的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组。
3.根据权利要求1所述的电致发光化合物,其中L1、L2、Ar、Ar1和Ar2的每一个的取代基独立地选自由氘、氰基、卤素、氨基、羟基、硝基、C1至C10烷基、C1至C10卤代烷基、C6至C20芳基、C3至C30杂芳基、C1至C10烷氧基、C1至C10烷基甲硅烷基、和C6至C20芳基甲硅烷基构成的组。
4.根据权利要求1所述的电致发光化合物,其中所述电致发光化合物选自式5:
[式5]
5.一种电致发光装置,包括:
第一电极;
面向所述第一电极的第二电极;和
位于所述第一电极和所述第二电极之间的至少一个有机材料层,
其中所述至少一个有机材料层中的一个或多个包括权利要求1所述的电致发光化合物。
6.根据权利要求5所述的电致发光装置,其中所述至少一个有机材料层包括电子注入层、电子传输层、空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、和发光材料层中的至少一者。
7.根据权利要求6所述的电致发光装置,其中所述空穴传输层包括所述电致发光化合物。
8.根据权利要求5所述的电致发光装置,进一步包括:
位于所述第一电极和所述第二电极之一的一侧上的光效率增强层,所述光效率增强层相对地定位成与所述有机材料层相对,
其中所述光效率增强层包括所述电致发光化合物。
9.根据权利要求8所述的电致发光装置,其中所述光效率增强层形成在所述第一电极的下表面和所述第二电极的上表面的至少一个上。
10.根据权利要求5所述的电致发光装置,其中L1和L2的每一个选自式3a和式3b,并且Ar由式4表示:
[式4]
其中X5至X7的每一个独立地为N或CR1
其中Y1和Y2独立地选自单键、O、S、Se、-R4-Si-R2-、R5-C-R3-,并且
其中R1、R2、R3、R4和R5的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组。
11.根据权利要求5所述的电致发光装置,其中L1、L2、Ar、Ar1和Ar2的每一个的取代基独立地选自由氘、氰基、卤素、氨基、羟基、硝基、C1至C10烷基、C1至C10卤代烷基、C6至C20芳基、C3至C30杂芳基、C1至C10烷氧基、C1至C10烷基甲硅烷基、和C6至C20芳基甲硅烷基构成的组。
12.根据权利要求5所述的电致发光装置,其中所述电致发光化合物选自式5:
[式5]
13.根据权利要求1所述的电致发光化合物,其为式1,
其中X1至X4的每一个独立地为N或CR’,
其中R和R’的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组,
其中L1选自单键、取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基,并且
其中Ar1和Ar2的每一个独立地选自由C6至C20芳基和C3至C30杂芳基构成的组。
14.根据权利要求1所述的电致发光化合物,其为式1,
其中X1至X4的每一个独立地为N或CR’,
其中R和R’的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组,
其中L2选自单键、取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基,
其中Ar选自由取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基构成的组,并且
其中Ar1和Ar2的每一个独立地选自由C6至C20芳基和C3至C30杂芳基构成的组。
15.根据权利要求5所述的电致发光装置,其中所述电致发光化合物为式1,
其中X1至X4的每一个独立地为N或CR’,
其中R和R’的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组,
其中L1选自单键、取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基,并且
其中Ar1和Ar2的每一个独立地选自由C6至C20芳基和C3至C30杂芳基构成的组。
16.根据权利要求5所述的电致发光装置,其中所述电致发光化合物为式2,
其中X1至X4的每一个独立地为N或CR’,
其中R和R’的每一个独立地选自由氢、氘、氰基、羟基、卤素、C1至C10烷基、C6至C20芳基、和C3至C30杂芳基构成的组,
其中L2选自单键、取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基,
其中Ar选自由取代的或未取代的C6至C20次芳基、和取代的或未取代的C3至C30次杂芳基构成的组,并且
其中Ar1和Ar2的每一个独立地选自由C6至C20芳基和C3至C30杂芳基构成的组。
17.根据权利要求13的所述电致发光化合物,其中R和R’是氢。
18.根据权利要求14的所述电致发光化合物,其中R和R’是氢。
19.根据权利要求15所述的电致发光装置,其中R和R’是氢。
20.根据权利要求16所述的电致发光装置,其中R和R’是氢。
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