CN110567632A - Core composite silicon piezoresistive pressure sensor - Google Patents

Abstract

The invention provides a core-body composite silicon piezoresistive pressure sensor to solve the defect problem of full-range precision existing in the pressure measurement of the existing silicon piezoresistive pressure sensor. The pressure sensor includes: a plurality of silicon piezoresistive pressure sensor cores, the silicon piezoresistive pressure sensor cores include a silicon piezoresistive pressure sensor chip for pressure acquisition of the object to be tested; a plurality of silicon piezoresistive pressure sensors The ranges of the chips are different, and the ranges of multiple silicon piezoresistive pressure sensor chips cover the full range used; the core composite shell, the core composite shell is used to package multiple silicon piezoresistive pressure sensor core components , and provide a unified test pressure medium for the plurality of silicon piezoresistive pressure sensor core assemblies; an information processing circuit board, the information processing circuit board is arranged on the core composite shell, and the information processing circuit board is used for Control and realize the coordinated measurement and switching output of multiple silicon piezoresistive pressure sensor cores.

Description

Core composite silicon piezoresistive pressure sensor

technical field

The invention relates to the technical field of microelectronic machinery and pressure sensors, in particular to a core-composite silicon piezoresistive pressure sensor.

Background technique

Silicon piezoresistive pressure sensor is the most mature type of silicon micro pressure sensor. It has the advantages of small size, high sensitivity, strong overload capacity, small process difficulty, and low cost. It is widely used in aerospace, industrial control, and consumer electronics. and other fields. At present, there are many researches on the application of silicon piezoresistive pressure sensors, mainly using micromachining and integration technologies to realize the miniaturization, integration, intelligence, serialization, and standardization of sensors, and to develop in the direction of high reliability.

In the application of pressure sensors in high-altitude meteorological detection, aerospace and other fields, it is often necessary to obtain higher-precision pressure values in high-altitude and low-pressure environments, but the pressure measurement range also needs to cover the normal pressure range near the ground. Since the sensor accuracy index is often calculated according to the value of the full scale, the reading accuracy of a single sensor in the low pressure range is relatively low. The reading accuracy of the low-pressure range section is relatively low, and the farther the measured pressure is from the full-scale pressure, the greater the measurement error. In the application occasions that have high requirements for the measurement accuracy of the full range, if a single sensor covering the full range is used for measurement, the accuracy requirements are extremely high, and the existing processing level is difficult to achieve. For example, if the sensor requires 20kPa If the measurement error is 20Pa, then the sensor accuracy index of the 110kPa range needs to reach 0.02% FS, which is difficult to achieve at present. Therefore, in the application occasions that have high requirements for the measurement accuracy of the whole range, the problem of the defect of the full range accuracy exists in the use of a single silicon piezoresistive pressure sensor.

Contents of the invention

The purpose of the present invention is to overcome the deficiencies in the prior art and provide a core composite silicon piezoresistive pressure sensor to solve the technical problems existing in the pressure measurement of the existing silicon piezoresistive pressure sensor.

Technical solution of the present invention is as follows:

The invention provides a core composite silicon piezoresistive pressure sensor, the pressure sensor comprising:

A plurality of silicon piezoresistive pressure sensor cores, the silicon piezoresistive pressure sensor cores include a silicon piezoresistive pressure sensor chip for pressure acquisition of the object to be tested; the ranges of the multiple silicon piezoresistive pressure sensor chips are different, And the ranges of the multiple silicon piezoresistive pressure sensor chips cover the full range used;

A core composite shell, the core composite shell is used to package a plurality of silicon piezoresistive pressure sensor core components, and provide a unified test pressure medium for the multiple silicon piezoresistive pressure sensor core components;

An information processing circuit board, the information processing circuit board is arranged on the composite shell of the core body, and the information processing circuit board is used to control and realize the coordinated measurement and switching output of multiple silicon piezoresistive pressure sensor core bodies.

Further, the silicon piezoresistive pressure sensor core also includes a TO package base, the periphery of the TO package base is in the shape of a cylindrical step, and the silicon piezoresistive pressure sensor chip is solidified and pasted on the TO package On the upper surface of the base, a plurality of pins are arranged on the lower surface of the TO packaging base, and the input and output ends of the silicon piezoresistive pressure sensor chip are also respectively connected to the plurality of pins.

Further, the silicon piezoresistive pressure sensor chip is pasted on the upper surface of the TO packaging base through curing of silicon rubber.

Further, a plurality of sealed cavities are arranged in the core composite casing, and a plurality of silicon piezoresistive pressure sensor cores are arranged in the plurality of sealed cavities one by one, and the core composite casing also has a Pressure guide holes, the pressure guide holes communicate with the plurality of sealed cavities respectively, and are used to uniformly introduce the test pressure medium into the plurality of sealed cavities.

Further, the lower surface of the TO package base is cured and bonded in the sealed cavity, and the plurality of pins also pass through the sealed cavity.

Further, the lower surface of the TO package base is cured and bonded in the sealed cavity by epoxy resin structural glue.

Further, the core composite shell is processed with metal structural materials.

Further, the information processing circuit board is provided with a plurality of jacks, and the plurality of pins are also passed through the jacks in one-to-one correspondence.

Further, the pins are penetrated in the socket by welding.

Further, the information processing circuit of the information processing circuit board includes an operational amplification module, an AD conversion module, and an information processing module, wherein the electrical signals output by a plurality of silicon piezoresistive pressure sensor cores are sequentially amplified by the operational amplification module, Then carry out AD conversion through the AD conversion module, and then process and control the switching output through the information processing module.

Compared with the prior art, a core composite silicon piezoresistive pressure sensor provided by the present invention has at least the following advantages:

(1) The present invention adopts the composite design scheme of cores with different ranges, and the output can be switched by controlling the coordinated measurement of cores with different ranges. Compared with the traditional single-core silicon piezoresistive pressure sensor, it realizes the full-range coverage The need for high-precision measurement solves the problem of full-scale accuracy defects in the use of a single silicon piezoresistive pressure sensor;

(2), when the present invention composites cores of different measuring ranges: on the one hand, the core is designed to be a small component of TO package level, and the core-level composite scheme avoids the process complexity of chip-level sensitive structure composite design, and the sensor System-level compounding is difficult to integrate, large volume and other problems, the configuration is more flexible, and the integration level is higher; on the other hand, the sensor cores of different ranges are packaged through the core composite shell, and the pressure medium is uniformly introduced to achieve different ranges. Composite measurement between the cores, and through the design of the lead holes on the circuit board, the contact and electrical interconnection between the core pins and the circuit board can be directly realized. Through the integrated design of function and structure, the structure is very compact, which is beneficial to volume control;

(3), the core composite silicon piezoresistive pressure sensor designed by the present invention makes full use of common materials and components, has a simple structure, is convenient to implement, and has low cost, and can be widely used in the need to realize high-precision measurement in a wide range. Especially for applications requiring high precision in the low pressure range.

Description of drawings

The accompanying drawings are included to provide further understanding of the embodiments of the invention, and constitute a part of the specification, are used to illustrate the embodiments of the invention, and together with the description, explain the principle of the invention. Apparently, the drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other drawings according to these drawings without creative efforts.

Fig. 1 shows a functional block diagram of a core compound silicon piezoresistive pressure sensor provided according to an embodiment of the present invention;

Fig. 2 shows a schematic cross-sectional view of the structure of a core compound silicon piezoresistive pressure sensor provided according to an embodiment of the present invention;

Fig. 3 shows a schematic cross-sectional view of a silicon piezoresistive pressure sensor core provided according to an embodiment of the present invention;

Fig. 4 shows a schematic diagram of a circuit principle of a core-composite silicon piezoresistive pressure sensor provided according to an embodiment of the present invention.

Wherein, the above-mentioned accompanying drawings include the following reference signs:

10. Silicon piezoresistive pressure sensor core; 11. Silicon piezoresistive pressure sensor chip; 12. TO packaging base; 13. Pins; 20. Core composite shell; 21. Pressure guide hole; 22. Sealed cavity; 30 . Information processing circuit board; 31. Jack.

Detailed ways

It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and/or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and/or combinations thereof.

The relative arrangements of components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. At the same time, it should be understood that, for the convenience of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship. Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the Authorized Specification. In all examples shown and discussed herein, any specific values should be construed as exemplary only, and not as limitations. Therefore, other examples of the exemplary embodiment may have different values. It should be noted that like numbers and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further discussion in subsequent figures.

As shown in Figures 1-2, according to an embodiment of the present invention, a core-composite silicon piezoresistive pressure sensor is provided, which includes: a plurality of silicon piezoresistive pressure sensor cores 10, a core-composite shell 20 and an information processing A circuit board 30, wherein the silicon piezoresistive pressure sensor core 10 includes a silicon piezoresistive pressure sensor chip 11 for pressure acquisition of the object to be tested; the ranges of the multiple silicon piezoresistive pressure sensor chips 11 are different, and The range of a plurality of silicon piezoresistive pressure sensor chips 11 covers the full range used; the core composite shell 20 is used to package a plurality of silicon piezoresistive pressure sensor cores 10 components, and the The piezoresistive pressure sensor core 10 assembly provides a unified test pressure medium; the information processing circuit board 30 is arranged on the core composite shell 20, and the information processing circuit board 30 is used to control the realization of multiple silicon piezoresistive pressure sensors Synergistic measurement and switching output of the core 10.

In the embodiment of the present invention, there are at least two silicon piezoresistive pressure sensor cores 10 .

Those skilled in the art should understand that sensor chips with different ranges can be reasonably selected for combination according to the requirements of the full range used, and the range of the combined sensor chip can cover the full range used. Specifically, in the overall design, it is necessary to analyze the indicators such as range and accuracy according to the actual use requirements, especially for the pressure range section with special requirements (often low-pressure range section or high-pressure range section), and determine the chip specifications that need to be combined. And the quantity, the range of the selected sensor chip should be able to cover the full range used.

In the embodiment of the present invention, considering the overload resistance and working life of the silicon piezoresistive sensor chip, the range difference between the highest range and the lowest range core is usually within 5 times. Instant measurement and switching of range pressure.

Applying the above-mentioned configuration method, aiming at the accuracy defects of full-range measurement of silicon piezoresistive pressure sensors in the prior art, the full-range section is reasonably split, for example, the low-range core is selected for measurement of the low-pressure range section, and then combined with other ranges The core body of the present invention needs to combine at least two core bodies with different ranges together, through reasonable The integrated structural design and packaging process realize the integrated packaging between multiple sensor chips and the mechanical structure, as well as the effective electrical connection between the watch core and the circuit, and at the same time realize the miniaturization of the overall structure.

Further, in the present invention, as shown in FIG. 3 , in order to realize the installation of the chip in the core composite shell 20 and the miniaturization design of the structure, the silicon piezoresistive pressure sensor core 10 also includes a TO packaging base 12, The periphery of the TO packaging base 12 is cylindrical and stepped, the silicon piezoresistive pressure sensor chip 11 is solidified and pasted on the upper surface of the TO packaging base 12, and the lower surface of the TO packaging base 12 is A plurality of pins 13 are arranged on it, and the input and output terminals of the silicon piezoresistive pressure sensor chip 11 are also connected to the plurality of pins 13 respectively.

In the embodiment of the present invention, the outer periphery of the TO packaging base 12 is designed to be cylindrical and stepped, so as to facilitate subsequent assembly and sealing in the core composite shell 20 .

In the embodiment of the present invention, the TO package base 12 is composed of one small and one large two cylinders in a stepped shape, wherein the chip is solidified and pasted on the surface of the small cylinder, and a plurality of pins 13 are arranged on the bottom surface of the large cylinder.

In the embodiment of the present invention, the input and output terminals of the chip can be connected to the one-to-one corresponding pins 13 through bonding wires.

In addition, those skilled in the art should understand that each core adopts the above-mentioned structural design.

Through the above configuration, the design core is a structure with a TO package base 12, that is, the core is a small component at the TO package level, and the core-level composite solution avoids the process complexity of chip-level sensitive structure composite design, and For problems such as difficult integration and large volume of sensor system-level compounding, the configuration is more flexible and the integration degree is higher.

Further, in the present invention, in order to achieve a better connection between the chip and the TO package base 12, the silicon piezoresistive pressure sensor chip 11 is pasted on the upper surface of the TO package base 12 by curing silicon rubber.

Applying the above configuration method, the silicon piezoresistive pressure sensor chip 11 is designed to be pasted on the upper surface of the TO package base 12 through the curing of silicon rubber. The use of silicon rubber not only ensures sufficient adhesion and strength, but also can relieve stress. , to achieve a better fixation of the chip.

Further, in the present invention, in order to realize the compounding of multiple cores, multiple sealed cavities 22 are arranged in the core compound shell 20, and a plurality of silicon piezoresistive pressure sensor cores 10 are arranged in one-to-one correspondence. In the plurality of sealed cavities 22, the core composite shell 20 also has a pressure guide hole 21, and the pressure guide holes 21 are respectively connected with the plurality of sealed cavities 22, and are used to uniformly introduce the test pressure medium into the plurality of sealed cavities 22.

In the embodiment of the present invention, preferably, the core composite shell 20 is processed by metal structural materials.

In the embodiment of the present invention, the pressure guide hole 21 and the sealing cavity 22 are both integrally processed in the core composite shell 20 .

Applying the above-mentioned configuration method, by designing the core composite shell 20 to have a pressure guide hole 21, which penetrates into multiple sealed cavities 22, multiple sealed cavities 22 form the same sealed cavity, ensuring that different sealed cavities 22 are uniformly introduced into the pressure medium , to realize the compound measurement between the cores of different ranges.

Further, in the present invention, in order to achieve better fixation of the core in the sealed cavity 22, the lower surface of the TO package base 12 is cured and bonded in the sealed cavity 22, and the plurality of pins 13 also passes through the sealed cavity 22 .

In the embodiment of the present invention, preferably, the lower surface of the TO package base 12 is cured and bonded in the sealed cavity 22 by epoxy resin structural glue.

Further, in the present invention, in order to realize the electrical interconnection and conduction between the core body and the information processing circuit board 30, the information processing circuit board 30 is provided with a plurality of jacks 31, and the plurality of pins 13 are also One-to-one correspondence is provided in the insertion holes 31 .

In the embodiment of the present invention, the information processing circuit board 30 is also fixed on the core composite casing 20 by screws.

In the embodiment of the present invention, preferably, the pin 13 is penetrated in the insertion hole 31 by welding.

More preferably, the pin 13 is welded to the socket 31 by means of soldering.

Further, in the present invention, as shown in FIG. 4 , in order to realize signal data collection and switch output, the information processing circuit of the information processing circuit board 30 includes an operational amplification module, an AD conversion module, and an information processing module, wherein, The electrical signals output by multiple silicon piezoresistive pressure sensor cores 10 are sequentially amplified by the operational amplification module, then AD converted by the AD conversion module, and then processed by the information processing module to control switching output.

In the embodiment of the present invention, an example is used to illustrate that when the pressure data tested by sensors with multiple ranges is collected, the information processing module immediately judges which range of pressure data to output from the sensor test according to the pressure data and each range, for example, for 5kPa～ 35kPa range and 35~110kPa range, when the measured data is 33kPa, then the sensor test data of 5kPa~35kPa range shall prevail and output immediately.

For example, the information processing circuit board 30 also includes a power conversion and voltage stabilization module, a communication module, etc., and each of the above-mentioned modules is a power conversion and voltage stabilization module, an operational amplification module, an AD conversion module, an information processing module, a communication module, etc. : It is used to adjust, amplify, and AD convert the air pressure and voltage information and temperature voltage information output by the sensor core sensed by the air pressure and temperature, and process it through the information processing module, and finally realize the information interaction with the external system by the communication module.

To sum up, compared with the prior art, a core composite silicon piezoresistive pressure sensor provided by the embodiment of the present invention has at least the following advantages:

(1) The present invention adopts the composite design scheme of cores with different ranges, and the output can be switched by controlling the coordinated measurement of cores with different ranges. Compared with the traditional single-core silicon piezoresistive pressure sensor, it realizes the full-range coverage The need for high-precision measurement solves the problem of full-scale accuracy defects in the use of a single silicon piezoresistive pressure sensor;

(2), when the present invention composites cores of different measuring ranges: on the one hand, the core is designed to be a small component of TO package level, and the core-level composite scheme avoids the process complexity of chip-level sensitive structure composite design, and the sensor System-level compounding is difficult to integrate, large volume and other problems, the configuration is more flexible, and the integration degree is higher; Composite measurement between the cores of the range, and through the design of the lead hole on the circuit board, the contact and electrical interconnection between the core pin 13 and the circuit board are directly realized, and the structure is very compact through the integrated design of function and structure. Conducive to volume control;

(3), the core composite silicon piezoresistive pressure sensor designed by the present invention makes full use of common materials and components, has a simple structure, is convenient to implement, and has low cost, and can be widely used in the need to realize high-precision measurement in a wide range. Especially for applications requiring high precision in the low pressure range.

In order to have a further understanding of the core composite silicon piezoresistive pressure sensor provided by the present invention, a specific embodiment will be described in detail below:

The embodiment of the present invention provides a core composite silicon piezoresistive pressure sensor, which is mainly composed of a number of silicon piezoresistive pressure sensor cores 10, a core composite shell 20, and an information collection circuit board. The piezoresistive pressure sensor chip 11 range and accuracy and other indicators are analyzed to determine the specification and quantity of the silicon piezoresistive pressure sensor chip 11 that needs to be compounded. In this embodiment, two silicon piezoresistive pressure sensor chips 11 of 35kPa and 110kPa are used for compounding. Measure the pressure within the range from 5kPa to 110kPa. The high and low silicon piezoresistive pressure sensor cores 10 are installed on the core composite shell 20 to achieve composite integration, and with information processing circuits and software, it can control the real-time measurement and switching of different range pressures, specifically:

Put two silicon piezoresistive pressure sensor cores 10 into the core composite shell 20, and open two sealed cavities 22 according to the shape and size of the TO packaging base 12, and the other end is a pressure guide hole 21, which penetrates the two In the sealed cavity 22, the same sealed cavity is formed, and a circle of epoxy resin structural glue is coated on the stepped structure of the TO package base 12, with a thickness of about 0.3 mm to 0.5 mm, and then bonded into the sealed cavity 22 and cured. After curing, the airtightness of the sealed chamber needs to be checked by a leak detector, which should meet the airtightness requirements of the sensor; 13 passes through the socket 31, and fixes the information processing circuit board 30 to the core composite shell 20 with fixing screws, and then welds the pin 13 and the socket 31 by soldering or other means to realize the sensor core and the information processing circuit The electrical interconnection between the boards 30 is conducted, that is, the assembly of the core composite high-precision silicon piezoresistive pressure sensor is completed.

The periphery of the TO packaging base 12 in this embodiment is cylindrical and stepped to facilitate subsequent assembly and sealing of the composite core shell. Cover with an appropriate amount of silicone rubber, with a thickness of about 0.3 mm to 0.5 mm, and the area is similar to the size of the silicon piezoresistive pressure sensor chip 11, then gently attach the silicon piezoresistive pressure sensor chip 11, dry and cure at room temperature for 24 hours, and the process is completed. Mount the silicon piezoresistive pressure sensor chip 11, and then connect the input and output terminals of the silicon piezoresistive pressure sensor chip 11 to the pins 13 on the TO package base 12 through bonding wires. range silicon piezoresistive pressure sensor chip 11, so repeat the above steps, and then mount another silicon piezoresistive pressure sensor chip 11 on another TO package base 12.

The typical test results of this embodiment are: the full-scale accuracy of the two cores is 0.1% FS, then the pressure measurement error value of the composite silicon piezoresistive pressure sensor is about 35Pa in the range of 5kPa ~ 35kPa, and the pressure measurement error in the range of 35 ~ 110kPa The internal pressure measurement error value is about 110Pa. Compared with a single pressure sensor with a range of 110kPa (the pressure measurement error value is 110Pa at 5kPa to 110kPa), the measurement accuracy of the low-pressure range section is significantly improved, and the performance of wide range and high precision is realized. index.

For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ...", "above", etc., to describe the The spatial positional relationship between one device or feature shown and other devices or features. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, devices described as "above" or "above" other devices or configurations would then be oriented "beneath" or "above" the other devices or configurations. under other devices or configurations”. Thus, the exemplary term "above" can encompass both an orientation of "above" and "beneath". The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptions used herein interpreted accordingly.

In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing corresponding components. To limit the protection scope of the present invention.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1. A core composite silicon piezoresistive pressure sensor, characterized in that the pressure sensor comprises: A plurality of silicon piezoresistive pressure sensor cores, the silicon piezoresistive pressure sensor cores include a silicon piezoresistive pressure sensor chip for pressure acquisition of the object to be tested; the ranges of the multiple silicon piezoresistive pressure sensor chips are different, And the ranges of the multiple silicon piezoresistive pressure sensor chips cover the full range used; A core composite shell, the core composite shell is used to package a plurality of silicon piezoresistive pressure sensor core components, and provide a unified test pressure medium for the multiple silicon piezoresistive pressure sensor core components; An information processing circuit board, the information processing circuit board is arranged on the composite shell of the core body, and the information processing circuit board is used to control and realize the coordinated measurement and switching output of multiple silicon piezoresistive pressure sensor core bodies. 2. A core composite silicon piezoresistive pressure sensor according to claim 1, characterized in that, the silicon piezoresistive pressure sensor core also includes a TO packaging base, and the periphery of the TO packaging base is in the shape of Cylindrical step shape, the silicon piezoresistive pressure sensor chip is solidified and pasted on the upper surface of the TO packaging base, a plurality of pins are arranged on the lower surface of the TO packaging base, and the silicon piezoresistive The input and output ends of the pressure sensor chip are also respectively connected to multiple pins. 3 . The core-composite silicon piezoresistive pressure sensor according to claim 2 , wherein the silicon piezoresistive pressure sensor chip is pasted on the upper surface of the TO packaging base through curing of silicon rubber. 4 . 4. A core composite silicon piezoresistive pressure sensor according to claim 1-3, wherein a plurality of sealed cavities are arranged in the core composite shell, and a plurality of silicon piezoresistive pressure sensors The cores are arranged one by one in the plurality of sealed cavities, and the composite shell of the core also has a pressure guide hole, and the pressure guide holes are respectively connected with the plurality of sealed cavities, and are used to test the pressure medium uniformly introduced into the plurality of sealed cavities. 5. A core compound silicon piezoresistive pressure sensor according to claim 4, characterized in that, the lower surface of the TO package base is solidified and bonded in the sealed cavity, and the plurality of leads The feet also protrude from the sealed cavity. 6 . The core-composite silicon piezoresistive pressure sensor according to claim 5 , wherein the lower surface of the TO package base is cured and bonded in the sealed cavity by epoxy resin structural glue. 6 . 7 . The core-composite silicon piezoresistive pressure sensor according to claim 1 , wherein the core-composite shell is processed by metal structural materials. 8 . 8. A core compound silicon piezoresistive pressure sensor according to claim 2, characterized in that the information processing circuit board is provided with a plurality of jacks, and the plurality of pins are also pierced one by one within the jack. 9 . The core-composite silicon piezoresistive pressure sensor according to claim 8 , wherein the pins are welded through the sockets. 10 . 10. A core compound silicon piezoresistive pressure sensor according to claim 1, wherein the information processing circuit of the information processing circuit board includes an operational amplification module, an AD conversion module, and an information processing module, wherein a plurality of The electrical signal output by the silicon piezoresistive pressure sensor core is sequentially amplified by the operational amplification module, then AD converted by the AD conversion module, and then processed by the information processing module to control switching output.