CN110567632A - Core body composite silicon piezoresistive pressure sensor - Google Patents
Core body composite silicon piezoresistive pressure sensor Download PDFInfo
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- CN110567632A CN110567632A CN201910808376.8A CN201910808376A CN110567632A CN 110567632 A CN110567632 A CN 110567632A CN 201910808376 A CN201910808376 A CN 201910808376A CN 110567632 A CN110567632 A CN 110567632A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- Measuring Fluid Pressure (AREA)
Abstract
The invention provides a core composite silicon piezoresistive pressure sensor, which aims to solve the problem of full-range precision defect when the existing silicon piezoresistive pressure sensor is used for pressure measurement. The pressure sensor includes: the silicon piezoresistive pressure sensor core body comprises a silicon piezoresistive pressure sensor chip and is used for collecting pressure of a piece to be measured; the measuring ranges of the silicon piezoresistive pressure sensor chips are different, and the measuring ranges of the silicon piezoresistive pressure sensor chips cover the full measuring range; the core body composite shell is used for packaging a plurality of silicon piezoresistive pressure sensor core body components and providing a unified test pressure medium for the plurality of silicon piezoresistive pressure sensor core body components; and the information processing circuit board is arranged on the core body composite shell and is used for controlling and realizing cooperative measurement and switching output of the multiple silicon piezoresistive pressure sensor core bodies.
Description
Technical Field
The invention relates to the technical field of micro-electronic machinery and pressure sensors, in particular to a core composite silicon piezoresistive pressure sensor.
background
the silicon piezoresistive pressure sensor is the most mature technology in the silicon micro-pressure sensors, has the advantages of small volume, high sensitivity, strong overload capacity, small process difficulty, low cost and the like, and is widely applied to the fields of aerospace, industrial control, consumer electronics and the like. At present, the application of silicon piezoresistive pressure sensors is researched more, the microminiaturization, integration, intellectualization, serialization and standardization of the sensors are realized mainly by utilizing the micromachining and integration technologies, and the sensors are developed towards the direction of high reliability.
In the application of the pressure sensor in the fields of high-altitude meteorological detection, aerospace and the like, a pressure value with higher precision is often required to be obtained in the high-altitude and low-pressure environment, but the pressure measuring range also needs to cover a normal-pressure measuring range near the ground. Because the accuracy index of the sensor is usually calculated according to the full-scale numerical value, the reading accuracy of a single sensor in a low-pressure range is relatively low, for example, a 110kPa range sensor with the accuracy of 0.1% FS has the measurement error of 110Pa in the measurement range, the reading accuracy in the low-pressure range is relatively low, and the measurement error is larger as the measured pressure is farther away from the full-scale pressure. In the use occasion with higher requirements on the full-range measurement accuracy, if a sensor which only covers the full range is adopted for measurement, the accuracy requirement on the sensor is extremely high, and the existing processing level is difficult to achieve, for example, if the measurement error is 20Pa when the sensor requires 20kPa, the sensor accuracy index of the 110kPa range needs to reach 0.02 percent FS, and the existing level is difficult to achieve. Therefore, in the use occasion with higher requirement on the full-range measurement precision, the single silicon piezoresistive pressure sensor has the defect of the full-range precision.
disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a core composite silicon piezoresistive pressure sensor so as to solve the technical problem of the existing silicon piezoresistive pressure sensor in pressure measurement.
The technical solution of the invention is as follows:
The invention provides a core composite silicon piezoresistive pressure sensor, which comprises:
the silicon piezoresistive pressure sensor core body comprises a silicon piezoresistive pressure sensor chip and is used for collecting pressure of a piece to be measured; the measuring ranges of the silicon piezoresistive pressure sensor chips are different, and the measuring ranges of the silicon piezoresistive pressure sensor chips cover the full measuring range;
the core body composite shell is used for packaging a plurality of silicon piezoresistive pressure sensor core body components and providing a unified test pressure medium for the plurality of silicon piezoresistive pressure sensor core body components;
And the information processing circuit board is arranged on the core body composite shell and is used for controlling and realizing cooperative measurement and switching output of the multiple silicon piezoresistive pressure sensor core bodies.
Further, silicon pressure drag pressure sensor core still includes TO encapsulation base, the periphery of TO encapsulation base is the columniform step form, silicon pressure drag pressure sensor chip solidification pastes and applies the upper surface of TO encapsulation base, be provided with a plurality of pins on the lower surface of TO encapsulation base, the input/output end of silicon pressure drag pressure sensor chip still is connected with a plurality of pins respectively.
further, the silicon piezoresistive pressure sensor chip is applied TO the upper surface of the TO packaging base through silicon rubber curing.
Furthermore, a plurality of sealing cavities are arranged in the core body composite shell, the silicon piezoresistive pressure sensor core bodies are arranged in the sealing cavities in a one-to-one correspondence mode, and the core body composite shell is further provided with a pressure guide hole which is communicated with the sealing cavities respectively and used for uniformly introducing a test pressure medium into the sealing cavities.
further, the lower surface of the TO packaging base is solidified and bonded in the sealing cavity, and the pins penetrate out of the sealing cavity.
Further, the lower surface of the TO packaging base is bonded in the sealing cavity through epoxy resin structural adhesive in a curing mode.
further, the core body composite shell is processed by adopting a metal structure material.
Furthermore, the information processing circuit board is provided with a plurality of jacks, and the pins are correspondingly arranged in the jacks in a penetrating mode.
Furthermore, the pins are arranged in the jack in a penetrating mode in a welding mode.
Furthermore, the information processing circuit of the information processing circuit board comprises an operational amplification module, an AD conversion module and an information processing module, wherein the electrical signals output by the silicon piezoresistive pressure sensor core bodies are sequentially amplified by the operational amplification module, then AD converted by the AD conversion module, and then processed by the information processing module and controlled to be switched and output.
Compared with the prior art, the core composite silicon piezoresistive pressure sensor provided by the invention at least has the following advantages:
(1) The invention adopts the design scheme of compounding cores with different ranges, can switch output by controlling the cooperative measurement of the cores with different ranges, and compared with the traditional silicon piezoresistive pressure sensor with a single core, the invention realizes the high-precision measurement requirement of covering the full range and solves the problem of the full-range precision defect of the single silicon piezoresistive pressure sensor;
(2) When the invention compounds the cores with different ranges: on one hand, the core body is designed TO be a TO packaging-level small element, the core body-level composite scheme avoids the process complexity of the composite design of a chip-level sensitive structure and the problems of difficulty in integration, large volume and the like of sensor system-level composite, and the core body-level composite scheme is more flexible in configuration and higher in integration level; on the other hand, the sensor cores with different ranges are packaged through the core composite shell, pressure media are uniformly introduced, composite measurement among the cores with different ranges is realized, contact and electrical interconnection between the core pins and the circuit board are directly realized through designing the lead holes on the circuit board, and the structure is very compact through function and structure integrated design, so that the volume control is facilitated;
(3) the core body combined type silicon piezoresistive pressure sensor designed by the invention fully utilizes common materials and components, has the advantages of simple structure, convenient implementation and low cost, and can be widely applied to application occasions needing to realize high-precision measurement in a wide range, particularly high precision requirements of a low-voltage range.
Drawings
the accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 illustrates a functional block diagram of a core composite silicon piezoresistive pressure sensor provided in accordance with an embodiment of the present invention;
FIG. 2 illustrates a schematic cross-sectional view of a core composite silicon piezoresistive pressure sensor structure provided in accordance with an embodiment of the present invention;
FIG. 3 illustrates a schematic cross-sectional structural view of a silicon piezoresistive pressure sensor core provided in accordance with an embodiment of the present invention;
FIG. 4 illustrates a schematic circuit diagram of a core composite silicon piezoresistive pressure sensor provided in accordance with an embodiment of the present invention.
Wherein the figures include the following reference numerals:
10. A silicon piezoresistive pressure sensor core body; 11. a silicon piezoresistive pressure sensor chip; 12. a TO package base; 13. a pin; 20. a core composite shell; 21. pressure guide holes; 22. sealing the cavity; 30. an information processing circuit board; 31. and (4) inserting the jack.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
As shown in fig. 1-2, there is provided a core composite silicon piezoresistive pressure sensor according to an embodiment of the present invention, including: the chip comprises a plurality of silicon piezoresistive pressure sensor core bodies 10, a core body composite shell 20 and an information processing circuit board 30, wherein the silicon piezoresistive pressure sensor core bodies 10 comprise silicon piezoresistive pressure sensor chips 11 and are used for carrying out pressure acquisition on a piece to be detected; the measuring ranges of the silicon piezoresistive pressure sensor chips 11 are different, and the measuring ranges of the silicon piezoresistive pressure sensor chips 11 cover the full measuring range; the core body composite shell 20 is used for encapsulating a plurality of silicon piezoresistive pressure sensor core body 10 components and providing a unified test pressure medium for the plurality of silicon piezoresistive pressure sensor core body 10 components; the information processing circuit board 30 is arranged on the core body composite shell 20, and the information processing circuit board 30 is used for controlling and realizing cooperative measurement and switching output of the plurality of silicon piezoresistive pressure sensor core bodies 10.
In the embodiment of the invention, at least two silicon piezoresistive pressure sensor core bodies 10 are provided.
Those skilled in the art should understand that the sensor chips with different ranges can be reasonably selected to be combined according to the requirement of the used full range, and the combined sensor chip range can cover the used full range. Specifically, during the overall design, according to the actual use requirements, especially for a pressure range (often a low-pressure range or a high-pressure range) with special requirements, the analysis of indexes such as range and precision is performed, the specification and the number of chips needing to be compounded are determined, and the range of the selected sensor chip can cover the full range of use.
In the embodiment of the invention, considering the overload resistance and the service life of the silicon piezoresistive sensor chip, the difference between the maximum measuring range and the minimum measuring range is usually within 5 times, and the instant measurement and switching of the pressure in different measuring ranges can be controlled by matching an information processing circuit and software when the sensor works.
By applying the configuration mode, aiming at the precision defect of the full-range measurement of the silicon piezoresistive pressure sensor in the prior art, the full-range section is reasonably split, for example, a low-range core body is selected to specially measure the low-range section, and then the core body and core bodies of other ranges are used for carrying out segmented cooperative measurement covering the full range, so that the purpose of high-precision measurement of the sensor in a wide-range can be achieved.
Further, in the present invention, as shown in fig. 3, in order TO implement the mounting of the chip in the core composite housing 20 and the design of the structure miniaturization, the silicon piezoresistive pressure sensor core 10 further includes a TO package base 12, the periphery of the TO package base 12 is in a cylindrical step shape, the silicon piezoresistive pressure sensor chip 11 is cured and attached on the upper surface of the TO package base 12, the lower surface of the TO package base 12 is provided with a plurality of pins 13, and the input and output ends of the silicon piezoresistive pressure sensor chip 11 are further connected with the plurality of pins 13 respectively.
In the embodiment of the present invention, the periphery of the TO package base 12 is designed TO be a cylindrical step shape, so as TO facilitate the subsequent assembly and sealing in the core composite shell 20.
in the embodiment of the invention, the TO package base 12 is formed by a small cylinder and a large cylinder which are step-shaped, wherein a chip is solidified and pasted on the surface of the small cylinder, and a plurality of pins 13 are arranged on the bottom surface of the large cylinder.
In the embodiment of the present invention, the input and output terminals of the chip may be connected to the pins 13 corresponding to one another through bonding wires.
Furthermore, it will be understood by those skilled in the art that each core may be constructed as described above.
Through the configuration mode, the core body is designed TO be a structure with the TO packaging base 12, namely the core body is a TO packaging-level small element, the core body-level composite scheme avoids the process complexity of chip-level sensitive structure composite design and the problems of difficulty in integration, large size and the like of sensor system-level composite, and the configuration is more flexible and the integration level is higher.
Further, in the present invention, in order TO achieve better connection of the chip TO the TO package base 12, the silicon piezoresistive pressure sensor chip 11 is cured and adhered on the upper surface of the TO package base 12 by silicon rubber.
By applying the configuration mode, the silicon piezoresistive pressure sensor chip 11 is designed TO be adhered TO the upper surface of the TO packaging base 12 through silicon rubber in a curing mode, and the silicon rubber is adopted, so that not only is enough cohesiveness and strength ensured, but also stress can be relieved, and the chip can be better fixed.
further, in the present invention, in order to realize the compounding of a plurality of core bodies, a plurality of sealed cavities 22 are provided in the core body compound housing 20, a plurality of silicon piezoresistive pressure sensor core bodies 10 are provided in the plurality of sealed cavities 22 in a one-to-one correspondence manner, the core body compound housing 20 further has a pressure guide hole 21, and the pressure guide hole 21 is respectively communicated with the plurality of sealed cavities 22 and is used for uniformly introducing a test pressure medium into the plurality of sealed cavities 22.
In the embodiment of the present invention, it is preferable that the core composite outer shell 20 is made of a metal structural material.
In the embodiment of the present invention, the pressure guide hole 21 and the sealing cavity 22 are integrally processed in the core body composite shell 20.
By applying the configuration mode, the core body composite shell 20 is provided with the pressure guide hole 21 and penetrates through the plurality of sealing cavities 22, so that the plurality of sealing cavities 22 form the same sealing cavity, pressure media are uniformly introduced into different sealing cavities 22, and composite measurement among core bodies with different ranges is realized.
Further, in the present invention, in order TO achieve better fixation of the core in the sealed cavity 22, the lower surface of the TO package base 12 is cured and bonded in the sealed cavity 22, and the plurality of pins 13 also penetrate out of the sealed cavity 22.
in the embodiment of the present invention, preferably, the lower surface of the TO package base 12 is bonded in the sealing cavity 22 by curing an epoxy structural adhesive.
Further, in the present invention, in order to realize the electrical interconnection and conduction between the core and the information processing circuit board 30, the information processing circuit board 30 is provided with a plurality of insertion holes 31, and the plurality of pins 13 are further correspondingly inserted into the insertion holes 31 one by one.
In the embodiment of the present invention, the information processing circuit board 30 is further fixed on the core composite housing 20 by screws.
In the embodiment of the present invention, preferably, the pins 13 are inserted into the insertion holes 31 by welding.
more preferably, the lead 13 and the insertion hole 31 are welded by soldering.
Further, in the present invention, as shown in fig. 4, in order to realize the acquisition and switching output of signal data, the information processing circuit of the information processing circuit board 30 includes an operational amplification module, an AD conversion module, and an information processing module, wherein the electrical signals output by the silicon piezoresistive pressure sensor cores 10 are sequentially amplified by the operational amplification module, then AD converted by the AD conversion module, and then processed by the information processing module and controlled to be switched and output.
In the embodiment of the present invention, for example, when pressure data measured by a plurality of range sensors is collected, the information processing module immediately determines, according to the pressure data and each range, which range of pressure data measured by the sensor is to be output, for example, for a range of 5kPa to 35kPa and a range of 35kPa to 110kPa, when the measured data is 33kPa, the data measured by the sensor with the range of 5kPa to 35kPa is taken as a reference and immediately output.
For example, the information processing circuit board 30 further includes a power conversion and voltage stabilization module, a communication module, and the like, where the above modules are the power conversion and voltage stabilization module, the operational amplification module, the AD conversion module, the information processing module, the communication module, and the like: the temperature and pressure sensor is used for conditioning, amplifying and AD converting air pressure voltage information and temperature voltage information output by sensing air pressure and temperature of the sensor core body, processing the air pressure voltage information and the temperature voltage information by the information processing module, and finally realizing information interaction with an external system by the communication module.
In summary, the core composite silicon piezoresistive pressure sensor provided by the embodiment of the present invention has at least the following advantages compared with the prior art:
(1) the invention adopts the design scheme of compounding cores with different ranges, can switch output by controlling the cooperative measurement of the cores with different ranges, and compared with the traditional silicon piezoresistive pressure sensor with a single core, the invention realizes the high-precision measurement requirement of covering the full range and solves the problem of the full-range precision defect of the single silicon piezoresistive pressure sensor;
(2) when the invention compounds the cores with different ranges: on one hand, the core body is designed TO be a TO packaging-level small element, the core body-level composite scheme avoids the process complexity of the composite design of a chip-level sensitive structure and the problems of difficulty in integration, large volume and the like of sensor system-level composite, and the core body-level composite scheme is more flexible in configuration and higher in integration level; on the other hand, the sensor cores with different ranges are packaged through the core composite shell 20, pressure media are uniformly introduced, composite measurement among the cores with different ranges is realized, contact and electrical interconnection between the core pins 13 and the circuit board are directly realized through designing lead holes on the circuit board, and the structure is very compact through function and structure integrated design, so that the volume control is facilitated;
(3) the core body combined type silicon piezoresistive pressure sensor designed by the invention fully utilizes common materials and components, has the advantages of simple structure, convenient implementation and low cost, and can be widely applied to application occasions needing to realize high-precision measurement in a wide range, particularly high precision requirements of a low-voltage range.
To further understand the core body composite silicon piezoresistive pressure sensor provided by the present invention, a detailed description is given below with reference to an embodiment:
The embodiment of the invention provides a core body composite silicon piezoresistive pressure sensor, which mainly comprises a plurality of silicon piezoresistive pressure sensor core bodies 10, a core body composite shell 20, an information acquisition circuit board and the like, firstly, indexes such as measuring range and precision of the silicon piezoresistive pressure sensor chip 11 are analyzed according to actual use requirements, the specification and the number of the silicon piezoresistive pressure sensor chips 11 needing to be compounded are determined, in the embodiment, two silicon piezoresistive pressure sensor chips 11 of 35kPa and 110kPa are selected for compounding, and the pressure within the measuring range of 5 kPa-110 kPa is measured. Install two high, low silicon piezoresistive pressure sensor core 10 on core composite shell 20 and realize compound integration, collocation information processing circuit and software, the instant measurement and the switching of steerable different range pressure, it is specific:
The method comprises the steps that two silicon piezoresistive pressure sensor cores 10 are arranged in a core composite shell 20, two sealing cavities 22 are formed according TO the shape and the size of a TO packaging base 12, pressure guide holes 21 are formed in the other ends of the TO packaging base and penetrate through the two sealing cavities 22 TO form the same sealing cavity, a circle of epoxy resin structural adhesive is coated on a step structure of the TO packaging base 12, the thickness of the epoxy resin structural adhesive is about 0.3-0.5 mm, the epoxy resin structural adhesive is then bonded into the sealing cavities 22 and is cured, the airtightness of the sealing cavity needs TO be checked through a leak detector after the curing, and the airtightness requirement of the sensor needs TO be met; then, corresponding insertion holes 31 are designed on the information processing circuit board 30 according to the positions of the pins 13, the pins 13 penetrate through the insertion holes 31, the information processing circuit board 30 is fixed on the core body composite shell 20 through fixing screws, then the pins 13 and the insertion holes 31 are welded through means such as soldering, electrical interconnection and conduction between the sensor core body and the information processing circuit board 30 are achieved, and then the core body composite high-precision silicon piezoresistive pressure sensor is assembled.
The periphery of the TO packaging base 12 in the embodiment is cylindrical step-shaped, so that the subsequent assembly and sealing of the composite core body shell are convenient, firstly, a proper amount of silicon rubber is coated at the position where the silicon piezoresistive pressure sensor chip 11 is placed at the center of the upper surface of the TO packaging base 12, the thickness is about 0.3 mm-0.5 mm, the area is similar TO the size of the silicon piezoresistive pressure sensor chip 11, then the silicon piezoresistive pressure sensor chip 11 is lightly attached, airing and curing for 24h at room temperature TO finish the mounting of the silicon piezoresistive pressure sensor chip 11, connecting the input and output ends of the silicon piezoresistive pressure sensor chip 11 TO the pins 13 on the TO package base 12 through bonding wires, since two silicon piezoresistive pressure sensor chips 11 with different measuring ranges are selected in the present embodiment, the above steps are repeated, and another silicon piezoresistive pressure sensor chip 11 is mounted on another TO package base 12.
Typical test results for this example are: the full-range accuracy of the two core bodies is 0.1% FS, the pressure measurement error value of the composite silicon piezoresistive pressure sensor in the range of 5kPa to 35kPa is about 35Pa, the pressure measurement error value of the composite silicon piezoresistive pressure sensor in the range of 35kPa to 110kPa is about 110Pa, compared with a single pressure sensor in the range of 110kPa (the pressure measurement error value of the composite silicon piezoresistive pressure sensor in the range of 5kPa to 110kPa is about 110Pa), the measurement accuracy of the low-pressure range section is obviously improved, and the performance indexes of wide range and high accuracy are realized.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
it should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A core-in-core silicon piezoresistive pressure sensor, said pressure sensor comprising:
The silicon piezoresistive pressure sensor core body comprises a silicon piezoresistive pressure sensor chip and is used for collecting pressure of a piece to be measured; the measuring ranges of the silicon piezoresistive pressure sensor chips are different, and the measuring ranges of the silicon piezoresistive pressure sensor chips cover the full measuring range;
the core body composite shell is used for packaging a plurality of silicon piezoresistive pressure sensor core body components and providing a unified test pressure medium for the plurality of silicon piezoresistive pressure sensor core body components;
And the information processing circuit board is arranged on the core body composite shell and is used for controlling and realizing cooperative measurement and switching output of the multiple silicon piezoresistive pressure sensor core bodies.
2. The core composite silicon piezoresistive pressure sensor according TO claim 1, wherein the silicon piezoresistive pressure sensor core further comprises a TO package base, the periphery of the TO package base is cylindrical and stepped, the silicon piezoresistive pressure sensor chip is cured and applied TO the upper surface of the TO package base, a plurality of pins are arranged on the lower surface of the TO package base, and the input and output ends of the silicon piezoresistive pressure sensor chip are further connected TO the plurality of pins respectively.
3. The core composite silicon piezoresistive pressure sensor as claimed in claim 2, wherein said silicon piezoresistive pressure sensor chip is cured and adhered on the upper surface of said TO package base by silicon rubber.
4. The core composite silicon piezoresistive pressure sensor according to claims 1-3, wherein a plurality of sealed cavities are provided in the core composite casing, a plurality of silicon piezoresistive pressure sensor cores are provided in the sealed cavities in a one-to-one correspondence manner, and the core composite casing further has a pressure guide hole, and the pressure guide hole is respectively communicated with the sealed cavities and is used for uniformly introducing a test pressure medium into the sealed cavities.
5. The core composite silicon piezoresistive pressure sensor according TO claim 4, wherein the lower surface of the TO package base is cured and bonded in the sealed cavity, and the plurality of pins further protrude out of the sealed cavity.
6. The core composite silicon piezoresistive pressure sensor according TO claim 5, wherein the lower surface of the TO package base is bonded in the sealed cavity by curing an epoxy structural adhesive.
7. The core composite silicon piezoresistive pressure sensor according to claim 1, wherein the core composite casing is made of a metallic material.
8. The core composite silicon piezoresistive pressure sensor according to claim 2, wherein the information processing circuit board is provided with a plurality of jacks, and the pins are further inserted into the jacks in a one-to-one correspondence manner.
9. The core composite silicon piezoresistive pressure sensor according to claim 8, wherein said pins are inserted into said sockets by welding.
10. The core composite silicon piezoresistive pressure sensor according to claim 1, wherein the information processing circuit of the information processing circuit board comprises an operational amplification module, an AD conversion module, and an information processing module, wherein the electrical signals output by the cores of the silicon piezoresistive pressure sensors are sequentially amplified by the operational amplification module, then are AD converted by the AD conversion module, and then are processed by the information processing module and are controlled to be switched and output.
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| CN112345127A (en) * | 2020-09-30 | 2021-02-09 | 北京自动化控制设备研究所 | Data fusion method for double-core composite silicon piezoresistive pressure sensor |
| CN112729621A (en) * | 2020-12-21 | 2021-04-30 | 苏州长风航空电子有限公司 | Dual-redundancy pressure sensor and manufacturing method thereof |
| CN113788451A (en) * | 2021-08-10 | 2021-12-14 | 北京自动化控制设备研究所 | Packaging method of composite range pressure sensing system |
| CN116046226A (en) * | 2023-01-07 | 2023-05-02 | 常州大学怀德学院 | MEMS pressure sensor for depth-to-width ratio etching |
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