CN110567632A - Core composite silicon piezoresistive pressure sensor - Google Patents

Core composite silicon piezoresistive pressure sensor Download PDF

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CN110567632A
CN110567632A CN201910808376.8A CN201910808376A CN110567632A CN 110567632 A CN110567632 A CN 110567632A CN 201910808376 A CN201910808376 A CN 201910808376A CN 110567632 A CN110567632 A CN 110567632A
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pressure sensor
silicon piezoresistive
core
piezoresistive pressure
information processing
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CN110567632B (en
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朱晓
柏楠
谢耀
韩士超
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Beijing Automation Control Equipment Institute BACEI
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

本发明提供一种芯体复合式硅压阻压力传感器,以解决现有硅压阻式压力传感器进行压力测量时所存在的全量程精度缺陷问题。该压力传感器包括:多个硅压阻压力传感器芯体,所述硅压阻压力传感器芯体包括硅压阻压力传感器芯片,用于对待测件进行压力采集;多个所述硅压阻压力传感器芯片的量程不同,且多个所述硅压阻压力传感器芯片的量程覆盖使用的全量程;芯体复合外壳,所述芯体复合外壳用于对多个硅压阻压力传感器芯体组件进行封装,并对所述多个硅压阻压力传感器芯体组件提供统一测试压力介质;信息处理电路板,所述信息处理电路板设置在所述芯体复合外壳上,所述信息处理电路板用于控制并实现多个硅压阻压力传感器芯体的协同测量和切换输出。

The invention provides a core-body composite silicon piezoresistive pressure sensor to solve the defect problem of full-range precision existing in the pressure measurement of the existing silicon piezoresistive pressure sensor. The pressure sensor includes: a plurality of silicon piezoresistive pressure sensor cores, the silicon piezoresistive pressure sensor cores include a silicon piezoresistive pressure sensor chip for pressure acquisition of the object to be tested; a plurality of silicon piezoresistive pressure sensors The ranges of the chips are different, and the ranges of multiple silicon piezoresistive pressure sensor chips cover the full range used; the core composite shell, the core composite shell is used to package multiple silicon piezoresistive pressure sensor core components , and provide a unified test pressure medium for the plurality of silicon piezoresistive pressure sensor core assemblies; an information processing circuit board, the information processing circuit board is arranged on the core composite shell, and the information processing circuit board is used for Control and realize the coordinated measurement and switching output of multiple silicon piezoresistive pressure sensor cores.

Description

芯体复合式硅压阻压力传感器Core composite silicon piezoresistive pressure sensor

技术领域technical field

本发明涉及微电子机械与压力传感器技术领域,尤其涉及一种芯体复合式硅压阻压力传感器。The invention relates to the technical field of microelectronic machinery and pressure sensors, in particular to a core-composite silicon piezoresistive pressure sensor.

背景技术Background technique

硅压阻压力传感器是硅微压力传感器中技术最成熟的一类,具有体积微小、灵敏度高、过载能力强、工艺难度小、成本低等优点,被广泛应用于航空航天、工业控制、消费电子等领域。目前针对硅压阻式压力传感器应用的研究较多,主要利用微机械加工和集成化技术,实现传感器的微型化、集成化、智能化、系列化、标准化,并向高可靠性方向发展。Silicon piezoresistive pressure sensor is the most mature type of silicon micro pressure sensor. It has the advantages of small size, high sensitivity, strong overload capacity, small process difficulty, and low cost. It is widely used in aerospace, industrial control, and consumer electronics. and other fields. At present, there are many researches on the application of silicon piezoresistive pressure sensors, mainly using micromachining and integration technologies to realize the miniaturization, integration, intelligence, serialization, and standardization of sensors, and to develop in the direction of high reliability.

压力传感器在高空气象探测、航空航天等领域的应用中,往往需要在高空、低压的环境下得到精度更高的压力值,但测压量程也需要覆盖在地面附近的常压量程段。由于传感器精度指标往往是按照满量程的数值计算的,单只传感器在低压量程段的读数精度相对较低,如精度0.1%FS的110kPa量程传感器,在测量范围内其测量误差都为110Pa,在低压量程段的读数精度就相对较低,测量的压力越远离满量程压力,其测量的误差越大。在对全量程测量精度都有较高要求的使用场合,如果采用单只覆盖全量程的传感器进行测量,则对其的精度要求极高,现有加工水平难以达到,例如如果对传感器要求20kPa时测量误差为20Pa,那么110kPa量程的传感器精度指标需要达到0.02%FS,现有水平难以达到。因此,在对全量程测量精度都有较高要求的使用场合,采用单只硅压阻式压力传感器存在全量程精度缺陷的问题。In the application of pressure sensors in high-altitude meteorological detection, aerospace and other fields, it is often necessary to obtain higher-precision pressure values in high-altitude and low-pressure environments, but the pressure measurement range also needs to cover the normal pressure range near the ground. Since the sensor accuracy index is often calculated according to the value of the full scale, the reading accuracy of a single sensor in the low pressure range is relatively low. The reading accuracy of the low-pressure range section is relatively low, and the farther the measured pressure is from the full-scale pressure, the greater the measurement error. In the application occasions that have high requirements for the measurement accuracy of the full range, if a single sensor covering the full range is used for measurement, the accuracy requirements are extremely high, and the existing processing level is difficult to achieve. For example, if the sensor requires 20kPa If the measurement error is 20Pa, then the sensor accuracy index of the 110kPa range needs to reach 0.02% FS, which is difficult to achieve at present. Therefore, in the application occasions that have high requirements for the measurement accuracy of the whole range, the problem of the defect of the full range accuracy exists in the use of a single silicon piezoresistive pressure sensor.

发明内容Contents of the invention

本发明的目的在于克服现有技术中的不足,提供一种芯体复合式硅压阻压力传感器,以解决现有硅压阻式压力传感器进行压力测量时所存在的技术问题。The purpose of the present invention is to overcome the deficiencies in the prior art and provide a core composite silicon piezoresistive pressure sensor to solve the technical problems existing in the pressure measurement of the existing silicon piezoresistive pressure sensor.

本发明技术解决方案如下:Technical solution of the present invention is as follows:

本发明提供了一种芯体复合式硅压阻压力传感器,该压力传感器包括:The invention provides a core composite silicon piezoresistive pressure sensor, the pressure sensor comprising:

多个硅压阻压力传感器芯体,所述硅压阻压力传感器芯体包括硅压阻压力传感器芯片,用于对待测件进行压力采集;多个所述硅压阻压力传感器芯片的量程不同,且多个所述硅压阻压力传感器芯片的量程覆盖使用的全量程;A plurality of silicon piezoresistive pressure sensor cores, the silicon piezoresistive pressure sensor cores include a silicon piezoresistive pressure sensor chip for pressure acquisition of the object to be tested; the ranges of the multiple silicon piezoresistive pressure sensor chips are different, And the ranges of the multiple silicon piezoresistive pressure sensor chips cover the full range used;

芯体复合外壳,所述芯体复合外壳用于对多个硅压阻压力传感器芯体组件进行封装,并对所述多个硅压阻压力传感器芯体组件提供统一测试压力介质;A core composite shell, the core composite shell is used to package a plurality of silicon piezoresistive pressure sensor core components, and provide a unified test pressure medium for the multiple silicon piezoresistive pressure sensor core components;

信息处理电路板,所述信息处理电路板设置在所述芯体复合外壳上,所述信息处理电路板用于控制并实现多个硅压阻压力传感器芯体的协同测量和切换输出。An information processing circuit board, the information processing circuit board is arranged on the composite shell of the core body, and the information processing circuit board is used to control and realize the coordinated measurement and switching output of multiple silicon piezoresistive pressure sensor core bodies.

进一步地,所述硅压阻压力传感器芯体还包括TO封装基座,所述TO封装基座的外围呈圆柱形的台阶状,所述硅压阻压力传感器芯片固化贴敷在所述TO封装基座的上表面,所述TO封装基座的下表面上设置有多个引脚,所述硅压阻压力传感器芯片的输入输出端还分别与多个引脚连接。Further, the silicon piezoresistive pressure sensor core also includes a TO package base, the periphery of the TO package base is in the shape of a cylindrical step, and the silicon piezoresistive pressure sensor chip is solidified and pasted on the TO package On the upper surface of the base, a plurality of pins are arranged on the lower surface of the TO packaging base, and the input and output ends of the silicon piezoresistive pressure sensor chip are also respectively connected to the plurality of pins.

进一步地,所述硅压阻压力传感器芯片通过硅橡胶固化贴敷在所述TO封装基座的上表面。Further, the silicon piezoresistive pressure sensor chip is pasted on the upper surface of the TO packaging base through curing of silicon rubber.

进一步地,所述芯体复合外壳内设置有多个密封腔,多个所述硅压阻压力传感器芯体一一对应设置在所述多个密封腔内,所述芯体复合外壳还具有一导压孔,所述导压孔分别与所述多个密封腔相连通,用于将测试压力介质统一引入到所述多个密封腔内。Further, a plurality of sealed cavities are arranged in the core composite casing, and a plurality of silicon piezoresistive pressure sensor cores are arranged in the plurality of sealed cavities one by one, and the core composite casing also has a Pressure guide holes, the pressure guide holes communicate with the plurality of sealed cavities respectively, and are used to uniformly introduce the test pressure medium into the plurality of sealed cavities.

进一步地,所述TO封装基座的下表面固化粘接在所述密封腔内,且所述多个引脚还穿出所述密封腔。Further, the lower surface of the TO package base is cured and bonded in the sealed cavity, and the plurality of pins also pass through the sealed cavity.

进一步地,所述TO封装基座的下表面通过环氧树脂结构胶固化粘接在所述密封腔内。Further, the lower surface of the TO package base is cured and bonded in the sealed cavity by epoxy resin structural glue.

进一步地,所述芯体复合外壳采用金属结构材料加工。Further, the core composite shell is processed with metal structural materials.

进一步地,所述信息处理电路板设置有多个插孔,所述多个引脚还一一对应穿设在所述插孔内。Further, the information processing circuit board is provided with a plurality of jacks, and the plurality of pins are also passed through the jacks in one-to-one correspondence.

进一步地,所述引脚通过焊接方式穿设在所述插孔内。Further, the pins are penetrated in the socket by welding.

进一步地,信息处理电路板的信息处理电路包括运算放大模块、AD转换模块、信息处理模块,其中,多个硅压阻压力传感器芯体输出的电信号依次经所述运算放大模块进行放大处理、接着经AD转换模块进行AD转换,然后经信息处理模块进行处理并控制切换输出。Further, the information processing circuit of the information processing circuit board includes an operational amplification module, an AD conversion module, and an information processing module, wherein the electrical signals output by a plurality of silicon piezoresistive pressure sensor cores are sequentially amplified by the operational amplification module, Then carry out AD conversion through the AD conversion module, and then process and control the switching output through the information processing module.

本发明提供的一种芯体复合式硅压阻压力传感器与现有技术相比至少具有以下优势:Compared with the prior art, a core composite silicon piezoresistive pressure sensor provided by the present invention has at least the following advantages:

(1)、本发明采用了不同量程芯体复合的设计方案,通过控制不同量程芯体的协同测量可切换输出,相比传统的单芯体的硅压阻压力传感器,实现了覆盖全量程的高精度测量需求,解决了采用单只硅压阻式压力传感器存在全量程精度缺陷的问题;(1) The present invention adopts the composite design scheme of cores with different ranges, and the output can be switched by controlling the coordinated measurement of cores with different ranges. Compared with the traditional single-core silicon piezoresistive pressure sensor, it realizes the full-range coverage The need for high-precision measurement solves the problem of full-scale accuracy defects in the use of a single silicon piezoresistive pressure sensor;

(2)、本发明将不同量程的芯体进行复合时:一方面设计芯体为TO封装级的小型元件,芯体级的复合方案规避了芯片级敏感结构复合设计的工艺复杂性,以及传感器系统级复合的难以集成、大体积等问题,配置更为灵活,集成度较高;另一方面,将不同量程的传感器芯体通过芯体复合外壳进行封装,统一引入压力介质,实现了不同量程的芯体之间的复合测量,并通过设计电路板上的引线孔,直接实现芯体引脚和电路板的接触与电气互连,通过功能、结构一体化设计,使结构十分紧凑,有利于体积大小的控制;(2), when the present invention composites cores of different measuring ranges: on the one hand, the core is designed to be a small component of TO package level, and the core-level composite scheme avoids the process complexity of chip-level sensitive structure composite design, and the sensor System-level compounding is difficult to integrate, large volume and other problems, the configuration is more flexible, and the integration level is higher; on the other hand, the sensor cores of different ranges are packaged through the core composite shell, and the pressure medium is uniformly introduced to achieve different ranges. Composite measurement between the cores, and through the design of the lead holes on the circuit board, the contact and electrical interconnection between the core pins and the circuit board can be directly realized. Through the integrated design of function and structure, the structure is very compact, which is beneficial to volume control;

(3)、本发明设计的芯体复合式硅压阻压力传感器充分利用常见的材料与元器件,结构简单,实施方便,成本低廉,能够广泛应用于需要在宽量程范围内实现高精度测量,尤其是低压量程段的精度要求较高的应用场合。(3), the core composite silicon piezoresistive pressure sensor designed by the present invention makes full use of common materials and components, has a simple structure, is convenient to implement, and has low cost, and can be widely used in the need to realize high-precision measurement in a wide range. Especially for applications requiring high precision in the low pressure range.

附图说明Description of drawings

所包括的附图用来提供对本发明实施例的进一步的理解,其构成了说明书的一部分,用于例示本发明的实施例,并与文字描述一起来阐释本发明的原理。显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。The accompanying drawings are included to provide further understanding of the embodiments of the invention, and constitute a part of the specification, are used to illustrate the embodiments of the invention, and together with the description, explain the principle of the invention. Apparently, the drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other drawings according to these drawings without creative efforts.

图1示出了根据本发明实施例提供的芯体复合式硅压阻压力传感器的原理框图;Fig. 1 shows a functional block diagram of a core compound silicon piezoresistive pressure sensor provided according to an embodiment of the present invention;

图2示出了根据本发明实施例提供的芯体复合式硅压阻压力传感器结构剖面示意图;Fig. 2 shows a schematic cross-sectional view of the structure of a core compound silicon piezoresistive pressure sensor provided according to an embodiment of the present invention;

图3示出了根据本发明实施例提供的硅压阻压力传感器芯体的结构剖面示意图;Fig. 3 shows a schematic cross-sectional view of a silicon piezoresistive pressure sensor core provided according to an embodiment of the present invention;

图4示出了根据本发明实施例提供的是芯体复合式硅压阻压力传感器的电路原理示意图。Fig. 4 shows a schematic diagram of a circuit principle of a core-composite silicon piezoresistive pressure sensor provided according to an embodiment of the present invention.

其中,上述附图包括以下附图标记:Wherein, the above-mentioned accompanying drawings include the following reference signs:

10、硅压阻压力传感器芯体;11、硅压阻压力传感器芯片;12、TO封装基座;13、引脚;20、芯体复合外壳;21、导压孔;22、密封腔;30、信息处理电路板;31、插孔。10. Silicon piezoresistive pressure sensor core; 11. Silicon piezoresistive pressure sensor chip; 12. TO packaging base; 13. Pins; 20. Core composite shell; 21. Pressure guide hole; 22. Sealed cavity; 30 . Information processing circuit board; 31. Jack.

具体实施方式Detailed ways

需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。以下对至少一个示例性实施例的描述实际上仅仅是说明性的,决不作为对本发明及其应用或使用的任何限制。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

需要注意的是,这里所使用的术语仅是为了描述具体实施方式,而非意图限制根据本申请的示例性实施方式。如在这里所使用的,除非上下文另外明确指出,否则单数形式也意图包括复数形式,此外,还应当理解的是,当在本说明书中使用术语“包含”和/或“包括”时,其指明存在特征、步骤、操作、器件、组件和/或它们的组合。It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and/or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and/or combinations thereof.

除非另外具体说明,否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。同时,应当明白,为了便于描述,附图中所示出的各个部分的尺寸并不是按照实际的比例关系绘制的。对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论,但在适当情况下,所述技术、方法和设备应当被视为授权说明书的一部分。在这里示出和讨论的所有示例中,任何具体值应被解释为仅仅是示例性的,而不是作为限制。因此,示例性实施例的其它示例可以具有不同的值。应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步讨论。The relative arrangements of components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. At the same time, it should be understood that, for the convenience of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship. Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the Authorized Specification. In all examples shown and discussed herein, any specific values should be construed as exemplary only, and not as limitations. Therefore, other examples of the exemplary embodiment may have different values. It should be noted that like numbers and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further discussion in subsequent figures.

如图1-2所示,根据本发明实施例提供一种芯体复合式硅压阻压力传感器,该压力传感器包括:多个硅压阻压力传感器芯体10、芯体复合外壳20和信息处理电路板30,其中,所述硅压阻压力传感器芯体10包括硅压阻压力传感器芯片11,用于对待测件进行压力采集;多个所述硅压阻压力传感器芯片11的量程不同,且多个所述硅压阻压力传感器芯片11的量程覆盖使用的全量程;所述芯体复合外壳20用于对多个硅压阻压力传感器芯体10组件进行封装,并对所述多个硅压阻压力传感器芯体10组件提供统一测试压力介质;所述信息处理电路板30设置在所述芯体复合外壳20上,所述信息处理电路板30用于控制实现多个硅压阻压力传感器芯体10的协同测量和切换输出。As shown in Figures 1-2, according to an embodiment of the present invention, a core-composite silicon piezoresistive pressure sensor is provided, which includes: a plurality of silicon piezoresistive pressure sensor cores 10, a core-composite shell 20 and an information processing A circuit board 30, wherein the silicon piezoresistive pressure sensor core 10 includes a silicon piezoresistive pressure sensor chip 11 for pressure acquisition of the object to be tested; the ranges of the multiple silicon piezoresistive pressure sensor chips 11 are different, and The range of a plurality of silicon piezoresistive pressure sensor chips 11 covers the full range used; the core composite shell 20 is used to package a plurality of silicon piezoresistive pressure sensor cores 10 components, and the The piezoresistive pressure sensor core 10 assembly provides a unified test pressure medium; the information processing circuit board 30 is arranged on the core composite shell 20, and the information processing circuit board 30 is used to control the realization of multiple silicon piezoresistive pressure sensors Synergistic measurement and switching output of the core 10.

本发明实施例中,所述的多个硅压阻压力传感器芯体10至少为两个。In the embodiment of the present invention, there are at least two silicon piezoresistive pressure sensor cores 10 .

本领域技术人员应当理解,可以根据使用的全量程的需求,合理选择不同量程的传感器芯片进行组合,且组合后的传感器芯片量程能够覆盖使用的全量程。具体的,在总体设计时需要根据实际使用需求,尤其是针对有特殊要求的压力量程段(往往是低压量程段或高压量程段),进行量程与精度等指标的分析,确定需要复合的芯片规格与数量,选用的传感器芯片量程应能够覆盖使用的全量程。Those skilled in the art should understand that sensor chips with different ranges can be reasonably selected for combination according to the requirements of the full range used, and the range of the combined sensor chip can cover the full range used. Specifically, in the overall design, it is necessary to analyze the indicators such as range and accuracy according to the actual use requirements, especially for the pressure range section with special requirements (often low-pressure range section or high-pressure range section), and determine the chip specifications that need to be combined. And the quantity, the range of the selected sensor chip should be able to cover the full range used.

本发明实施例中,考虑到硅压阻传感器芯片的抗过载能力与工作寿命,往往最高量程与最低量程芯体的量程差在5倍以内,传感器工作时搭配信息处理电路与软件,可控制不同量程压力的即时测量与切换。In the embodiment of the present invention, considering the overload resistance and working life of the silicon piezoresistive sensor chip, the range difference between the highest range and the lowest range core is usually within 5 times. Instant measurement and switching of range pressure.

应用上述配置方式,针对现有技术中硅压阻压力传感器全量程测量的精度缺陷,将全量程段进行合理拆分,例如选用低量程的芯体专门针对低压量程段进行测量,然后与其他量程的芯体进行覆盖全量程的分段协同测量,即能使传感器达到在宽量程范围内的高精度测量的目的,本发明方案需要将至少两只不同量程的芯体复合到一起,通过合理的一体化结构设计与封装工艺,实现多只传感器芯片与机械结构之间的一体化封装,以及表芯与电路之间的有效电气连接,同时实现了整体结构的小型化。Applying the above-mentioned configuration method, aiming at the accuracy defects of full-range measurement of silicon piezoresistive pressure sensors in the prior art, the full-range section is reasonably split, for example, the low-range core is selected for measurement of the low-pressure range section, and then combined with other ranges The core body of the present invention needs to combine at least two core bodies with different ranges together, through reasonable The integrated structural design and packaging process realize the integrated packaging between multiple sensor chips and the mechanical structure, as well as the effective electrical connection between the watch core and the circuit, and at the same time realize the miniaturization of the overall structure.

进一步地,在本发明中,如图3所示,为了实现芯片在芯体复合外壳20内的安装以及结构小型化设计,所述硅压阻压力传感器芯体10还包括TO封装基座12,所述TO封装基座12的外围呈圆柱形的台阶状,所述硅压阻压力传感器芯片11固化贴敷在所述TO封装基座12的上表面,所述TO封装基座12的下表面上设置有多个引脚13,所述硅压阻压力传感器芯片11的输入输出端还分别与多个引脚13连接。Further, in the present invention, as shown in FIG. 3 , in order to realize the installation of the chip in the core composite shell 20 and the miniaturization design of the structure, the silicon piezoresistive pressure sensor core 10 also includes a TO packaging base 12, The periphery of the TO packaging base 12 is cylindrical and stepped, the silicon piezoresistive pressure sensor chip 11 is solidified and pasted on the upper surface of the TO packaging base 12, and the lower surface of the TO packaging base 12 is A plurality of pins 13 are arranged on it, and the input and output terminals of the silicon piezoresistive pressure sensor chip 11 are also connected to the plurality of pins 13 respectively.

本发明实施例中,将所述TO封装基座12的外围设计为呈圆柱形的台阶状,目的在于方便后续在芯体复合外壳20内的装配与密封。In the embodiment of the present invention, the outer periphery of the TO packaging base 12 is designed to be cylindrical and stepped, so as to facilitate subsequent assembly and sealing in the core composite shell 20 .

本发明实施例中,TO封装基座12为呈台阶状的一小一大两圆柱构成,其中,芯片固化贴敷在小圆柱的表面,多个引脚13设置在大圆柱的底面。In the embodiment of the present invention, the TO package base 12 is composed of one small and one large two cylinders in a stepped shape, wherein the chip is solidified and pasted on the surface of the small cylinder, and a plurality of pins 13 are arranged on the bottom surface of the large cylinder.

本发明实施例中,所述芯片的输入输出端可以通过键合引线连接到一一对应的引脚13上。In the embodiment of the present invention, the input and output terminals of the chip can be connected to the one-to-one corresponding pins 13 through bonding wires.

此外,本领域技术人员应当理解,每一个芯体均采用上述的结构设计。In addition, those skilled in the art should understand that each core adopts the above-mentioned structural design.

通过上述配置方式,设计芯体为带有TO封装基座12的结构,即芯体为TO封装级的小型元件,芯体级的复合方案规避了芯片级敏感结构复合设计的工艺复杂性,以及传感器系统级复合的难以集成、大体积等问题,配置更为灵活,集成度较高。Through the above configuration, the design core is a structure with a TO package base 12, that is, the core is a small component at the TO package level, and the core-level composite solution avoids the process complexity of chip-level sensitive structure composite design, and For problems such as difficult integration and large volume of sensor system-level compounding, the configuration is more flexible and the integration degree is higher.

进一步地,在本发明中,为了实现芯片与TO封装基座12更好的连接,所述硅压阻压力传感器芯片11通过硅橡胶固化贴敷在所述TO封装基座12的上表面。Further, in the present invention, in order to achieve a better connection between the chip and the TO package base 12, the silicon piezoresistive pressure sensor chip 11 is pasted on the upper surface of the TO package base 12 by curing silicon rubber.

应用上述配置方式,设计硅压阻压力传感器芯片11通过硅橡胶固化贴敷在所述TO封装基座12的上表面,采用硅橡胶不仅保证了足够的粘结性、强度,而且能减除应力,实现了芯片更好地固定。Applying the above configuration method, the silicon piezoresistive pressure sensor chip 11 is designed to be pasted on the upper surface of the TO package base 12 through the curing of silicon rubber. The use of silicon rubber not only ensures sufficient adhesion and strength, but also can relieve stress. , to achieve a better fixation of the chip.

进一步地,在本发明中,为了实现多个芯体的复合,所述芯体复合外壳20内设置有多个密封腔22,多个所述硅压阻压力传感器芯体10一一对应设置在所述多个密封腔22内,所述芯体复合外壳20还具有一导压孔21,所述导压孔21分别与所述多个密封腔22相连通,用于将测试压力介质统一引入到所述多个密封腔22内。Further, in the present invention, in order to realize the compounding of multiple cores, multiple sealed cavities 22 are arranged in the core compound shell 20, and a plurality of silicon piezoresistive pressure sensor cores 10 are arranged in one-to-one correspondence. In the plurality of sealed cavities 22, the core composite shell 20 also has a pressure guide hole 21, and the pressure guide holes 21 are respectively connected with the plurality of sealed cavities 22, and are used to uniformly introduce the test pressure medium into the plurality of sealed cavities 22.

本发明实施例中,优选的,芯体复合外壳20由金属结构材料加工。In the embodiment of the present invention, preferably, the core composite shell 20 is processed by metal structural materials.

本发明实施例中,所述导压孔21、密封腔22均为一体化加工在所述芯体复合外壳20内。In the embodiment of the present invention, the pressure guide hole 21 and the sealing cavity 22 are both integrally processed in the core composite shell 20 .

应用上述配置方式,通过设计芯体复合外壳20具有导压孔21,并贯穿到多个密封腔22内,使得多个密封腔22形成同一个密封腔室,保证不同密封腔22统一引入压力介质,实现了不同量程的芯体之间的复合测量。Applying the above-mentioned configuration method, by designing the core composite shell 20 to have a pressure guide hole 21, which penetrates into multiple sealed cavities 22, multiple sealed cavities 22 form the same sealed cavity, ensuring that different sealed cavities 22 are uniformly introduced into the pressure medium , to realize the compound measurement between the cores of different ranges.

进一步地,在本发明中,为了实现芯体更好在密封腔22内的固定,所述TO封装基座12的下表面固化粘接在所述密封腔22内,且所述多个引脚13还穿出所述密封腔22。Further, in the present invention, in order to achieve better fixation of the core in the sealed cavity 22, the lower surface of the TO package base 12 is cured and bonded in the sealed cavity 22, and the plurality of pins 13 also passes through the sealed cavity 22 .

本发明实施例中,优选的,所述TO封装基座12的下表面通过环氧树脂结构胶固化粘接在所述密封腔22内。In the embodiment of the present invention, preferably, the lower surface of the TO package base 12 is cured and bonded in the sealed cavity 22 by epoxy resin structural glue.

进一步地,在本发明中,为了实现芯体与信息处理电路板30之间的电气互连导通,所述信息处理电路板30设置有多个插孔31,所述多个引脚13还一一对应穿设在所述插孔31内。Further, in the present invention, in order to realize the electrical interconnection and conduction between the core body and the information processing circuit board 30, the information processing circuit board 30 is provided with a plurality of jacks 31, and the plurality of pins 13 are also One-to-one correspondence is provided in the insertion holes 31 .

本发明实施例中,所述信息处理电路板30还通过螺钉固定在所述芯体复合外壳20上。In the embodiment of the present invention, the information processing circuit board 30 is also fixed on the core composite casing 20 by screws.

本发明实施例中,作为优选,所述引脚13通过焊接方式穿设在所述插孔31内。In the embodiment of the present invention, preferably, the pin 13 is penetrated in the insertion hole 31 by welding.

更优选的,通过锡焊手段将引脚13与插孔31进行焊接。More preferably, the pin 13 is welded to the socket 31 by means of soldering.

进一步地,在本发明中,如图4所示,为了实现信号数据的采集以及切换输出,所述信息处理电路板30的信息处理电路包括运算放大模块、AD转换模块、信息处理模块,其中,多个硅压阻压力传感器芯体10输出的电信号依次经所述运算放大模块进行放大处理、接着经AD转换模块进行AD转换,然后经信息处理模块进行处理并控制切换输出。Further, in the present invention, as shown in FIG. 4 , in order to realize signal data collection and switch output, the information processing circuit of the information processing circuit board 30 includes an operational amplification module, an AD conversion module, and an information processing module, wherein, The electrical signals output by multiple silicon piezoresistive pressure sensor cores 10 are sequentially amplified by the operational amplification module, then AD converted by the AD conversion module, and then processed by the information processing module to control switching output.

本发明实施例中,举例说明,当采集到多个量程传感器测试的压力数据时,信息处理模块根据所述压力数据以及各个量程,即时判断输出哪个量程的传感器测试的压力数据,比如对于5kPa~35kPa量程和35~110kPa量程,当测得数据为33kPa时,则以5kPa~35kPa量程的传感器测试的数据为准并即时输出。In the embodiment of the present invention, an example is used to illustrate that when the pressure data tested by sensors with multiple ranges is collected, the information processing module immediately judges which range of pressure data to output from the sensor test according to the pressure data and each range, for example, for 5kPa~ 35kPa range and 35~110kPa range, when the measured data is 33kPa, then the sensor test data of 5kPa~35kPa range shall prevail and output immediately.

举例说明,所述信息处理电路板30还包括电源转换及稳压模块、通讯模块等,上述的各个模块即电源转换及稳压模块、运算放大模块、AD转换模块、信息处理模块、通讯模块等:用于对传感器芯体感知的气压、温度而输出的气压电压信息和温度电压信息进行调理、放大、AD转换,并经信息处理模块进行处理,最后由通讯模块实现与外部系统的信息交互。For example, the information processing circuit board 30 also includes a power conversion and voltage stabilization module, a communication module, etc., and each of the above-mentioned modules is a power conversion and voltage stabilization module, an operational amplification module, an AD conversion module, an information processing module, a communication module, etc. : It is used to adjust, amplify, and AD convert the air pressure and voltage information and temperature voltage information output by the sensor core sensed by the air pressure and temperature, and process it through the information processing module, and finally realize the information interaction with the external system by the communication module.

综上,本发明实施例提供的一种芯体复合式硅压阻压力传感器与现有技术相比至少具有以下优势:To sum up, compared with the prior art, a core composite silicon piezoresistive pressure sensor provided by the embodiment of the present invention has at least the following advantages:

(1)、本发明采用了不同量程芯体复合的设计方案,通过控制不同量程芯体的协同测量可切换输出,相比传统的单芯体的硅压阻压力传感器,实现了覆盖全量程的高精度测量需求,解决了采用单只硅压阻式压力传感器存在全量程精度缺陷的问题;(1) The present invention adopts the composite design scheme of cores with different ranges, and the output can be switched by controlling the coordinated measurement of cores with different ranges. Compared with the traditional single-core silicon piezoresistive pressure sensor, it realizes the full-range coverage The need for high-precision measurement solves the problem of full-scale accuracy defects in the use of a single silicon piezoresistive pressure sensor;

(2)、本发明将不同量程的芯体进行复合时:一方面设计芯体为TO封装级的小型元件,芯体级的复合方案规避了芯片级敏感结构复合设计的工艺复杂性,以及传感器系统级复合的难以集成、大体积等问题,配置更为灵活,集成度较高;另一方面,将不同量程的传感器芯体通过芯体复合外壳20进行封装,统一引入压力介质,实现了不同量程的芯体之间的复合测量,并通过设计电路板上的引线孔,直接实现芯体引脚13和电路板的接触与电气互连,通过功能、结构一体化设计,使结构十分紧凑,有利于体积大小的控制;(2), when the present invention composites cores of different measuring ranges: on the one hand, the core is designed to be a small component of TO package level, and the core-level composite scheme avoids the process complexity of chip-level sensitive structure composite design, and the sensor System-level compounding is difficult to integrate, large volume and other problems, the configuration is more flexible, and the integration degree is higher; Composite measurement between the cores of the range, and through the design of the lead hole on the circuit board, the contact and electrical interconnection between the core pin 13 and the circuit board are directly realized, and the structure is very compact through the integrated design of function and structure. Conducive to volume control;

(3)、本发明设计的芯体复合式硅压阻压力传感器充分利用常见的材料与元器件,结构简单,实施方便,成本低廉,能够广泛应用于需要在宽量程范围内实现高精度测量,尤其是低压量程段的精度要求较高的应用场合。(3), the core composite silicon piezoresistive pressure sensor designed by the present invention makes full use of common materials and components, has a simple structure, is convenient to implement, and has low cost, and can be widely used in the need to realize high-precision measurement in a wide range. Especially for applications requiring high precision in the low pressure range.

为了对本发明提供的芯体复合式硅压阻压力传感器有更进一步了解,下面以一具体实施例进行详细说明:In order to have a further understanding of the core composite silicon piezoresistive pressure sensor provided by the present invention, a specific embodiment will be described in detail below:

本发明实施例提供一种芯体复合式硅压阻压力传感器,主要由若干硅压阻压力传感器芯体10、芯体复合外壳20、信息采集电路板等部分组成,首先根据实际使用需求进行硅压阻压力传感器芯片11量程与精度等指标进行分析,确定需要复合的硅压阻压力传感器芯片11规格与数量,本实施例中,选用35kPa与110kPa的两只硅压阻压力传感器芯片11复合,测量从5kPa~110kPa量程范围内的压力。将高、低两只硅压阻压力传感器芯体10安装到芯体复合外壳20上实现复合集成,搭配信息处理电路与软件,可控制不同量程压力的即时测量与切换,具体的:The embodiment of the present invention provides a core composite silicon piezoresistive pressure sensor, which is mainly composed of a number of silicon piezoresistive pressure sensor cores 10, a core composite shell 20, and an information collection circuit board. The piezoresistive pressure sensor chip 11 range and accuracy and other indicators are analyzed to determine the specification and quantity of the silicon piezoresistive pressure sensor chip 11 that needs to be compounded. In this embodiment, two silicon piezoresistive pressure sensor chips 11 of 35kPa and 110kPa are used for compounding. Measure the pressure within the range from 5kPa to 110kPa. The high and low silicon piezoresistive pressure sensor cores 10 are installed on the core composite shell 20 to achieve composite integration, and with information processing circuits and software, it can control the real-time measurement and switching of different range pressures, specifically:

将两只硅压阻压力传感器芯体10装入芯体复合外壳20中,根据TO封装基座12的形状与尺寸开有两个密封腔22,另一端为导压孔21,贯穿到两个密封腔22内,形成同一个密封腔室,TO封装基座12的台阶结构上涂覆一圈环氧树脂结构胶,厚度约0.3mm~0.5mm左右,然后粘接到密封腔22内并固化,固化后需要通过检漏仪检验密封腔室的气密性,应达到传感器的气密性要求;然后将信息处理电路板30上根据引脚13的位置设计有对应的插孔31,引脚13穿过插孔31,利用固定螺钉将信息处理电路板30固定到芯体复合外壳20上,然后通过锡焊等手段将引脚13与插孔31进行焊接,实现传感器芯体与信息处理电路板30之间的电气互连导通,即完成芯体复合式高精度硅压阻压力传感器的组装。Put two silicon piezoresistive pressure sensor cores 10 into the core composite shell 20, and open two sealed cavities 22 according to the shape and size of the TO packaging base 12, and the other end is a pressure guide hole 21, which penetrates the two In the sealed cavity 22, the same sealed cavity is formed, and a circle of epoxy resin structural glue is coated on the stepped structure of the TO package base 12, with a thickness of about 0.3 mm to 0.5 mm, and then bonded into the sealed cavity 22 and cured. After curing, the airtightness of the sealed chamber needs to be checked by a leak detector, which should meet the airtightness requirements of the sensor; 13 passes through the socket 31, and fixes the information processing circuit board 30 to the core composite shell 20 with fixing screws, and then welds the pin 13 and the socket 31 by soldering or other means to realize the sensor core and the information processing circuit The electrical interconnection between the boards 30 is conducted, that is, the assembly of the core composite high-precision silicon piezoresistive pressure sensor is completed.

本实施例中的TO封装基座12外围为圆柱形的台阶状,方便后续复合芯体外壳的装配与密封,首先在TO封装基座12上表面中心放置硅压阻压力传感器芯片11的位置涂覆适量的硅橡胶,厚度约0.3mm~0.5mm左右,面积与硅压阻压力传感器芯片11大小类似,之后轻轻贴装上硅压阻压力传感器芯片11,在室温下晾干固化24h,完成硅压阻压力传感器芯片11的贴装,然后通过键合引线将硅压阻压力传感器芯片11输入输出端连接到TO封装基座12上的引脚13上,由于本实施例中共选用两只不同量程的硅压阻压力传感器芯片11,因此重复以上步骤,再将另一只硅压阻压力传感器芯片11贴装到另一只TO封装基座12上。The periphery of the TO packaging base 12 in this embodiment is cylindrical and stepped to facilitate subsequent assembly and sealing of the composite core shell. Cover with an appropriate amount of silicone rubber, with a thickness of about 0.3 mm to 0.5 mm, and the area is similar to the size of the silicon piezoresistive pressure sensor chip 11, then gently attach the silicon piezoresistive pressure sensor chip 11, dry and cure at room temperature for 24 hours, and the process is completed. Mount the silicon piezoresistive pressure sensor chip 11, and then connect the input and output terminals of the silicon piezoresistive pressure sensor chip 11 to the pins 13 on the TO package base 12 through bonding wires. range silicon piezoresistive pressure sensor chip 11, so repeat the above steps, and then mount another silicon piezoresistive pressure sensor chip 11 on another TO package base 12.

本实施例的典型测试结果为:两只芯体的全量程精度都为0.1%FS,那么该复合式硅压阻压力传感器在5kPa~35kPa范围内压力测量误差值约为35Pa,35~110kPa范围内压力测量误差值约为110Pa,相比110kPa量程的单只压力传感器(在5kPa~110kPa的压力测量误差值都为110Pa),低压量程段测量精度明显提升,实现了宽量程、高精度的性能指标。The typical test results of this embodiment are: the full-scale accuracy of the two cores is 0.1% FS, then the pressure measurement error value of the composite silicon piezoresistive pressure sensor is about 35Pa in the range of 5kPa ~ 35kPa, and the pressure measurement error in the range of 35 ~ 110kPa The internal pressure measurement error value is about 110Pa. Compared with a single pressure sensor with a range of 110kPa (the pressure measurement error value is 110Pa at 5kPa to 110kPa), the measurement accuracy of the low-pressure range section is significantly improved, and the performance of wide range and high precision is realized. index.

为了便于描述,在这里可以使用空间相对术语,如“在……之上”、“在……上方”、“在……上表面”、“上面的”等,用来描述如在图中所示的一个器件或特征与其他器件或特征的空间位置关系。应当理解的是,空间相对术语旨在包含除了器件在图中所描述的方位之外的在使用或操作中的不同方位。例如,如果附图中的器件被倒置,则描述为“在其他器件或构造上方”或“在其他器件或构造之上”的器件之后将被定位为“在其他器件或构造下方”或“在其他器件或构造之下”。因而,示例性术语“在……上方”可以包括“在……上方”和“在……下方”两种方位。该器件也可以其他不同方式定位(旋转90度或处于其他方位),并且对这里所使用的空间相对描述作出相应解释。For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ...", "above", etc., to describe the The spatial positional relationship between one device or feature shown and other devices or features. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, devices described as "above" or "above" other devices or configurations would then be oriented "beneath" or "above" the other devices or configurations. under other devices or configurations”. Thus, the exemplary term "above" can encompass both an orientation of "above" and "beneath". The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptions used herein interpreted accordingly.

此外,需要说明的是,使用“第一”、“第二”等词语来限定零部件,仅仅是为了便于对相应零部件进行区别,如没有另行声明,上述词语并没有特殊含义,因此不能理解为对本发明保护范围的限制。In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing corresponding components. To limit the protection scope of the present invention.

以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1.一种芯体复合式硅压阻压力传感器,其特征在于,所述压力传感器包括:1. A core composite silicon piezoresistive pressure sensor, characterized in that the pressure sensor comprises: 多个硅压阻压力传感器芯体,所述硅压阻压力传感器芯体包括硅压阻压力传感器芯片,用于对待测件进行压力采集;多个所述硅压阻压力传感器芯片的量程不同,且多个所述硅压阻压力传感器芯片的量程覆盖使用的全量程;A plurality of silicon piezoresistive pressure sensor cores, the silicon piezoresistive pressure sensor cores include a silicon piezoresistive pressure sensor chip for pressure acquisition of the object to be tested; the ranges of the multiple silicon piezoresistive pressure sensor chips are different, And the ranges of the multiple silicon piezoresistive pressure sensor chips cover the full range used; 芯体复合外壳,所述芯体复合外壳用于对多个硅压阻压力传感器芯体组件进行封装,并对所述多个硅压阻压力传感器芯体组件提供统一测试压力介质;A core composite shell, the core composite shell is used to package a plurality of silicon piezoresistive pressure sensor core components, and provide a unified test pressure medium for the multiple silicon piezoresistive pressure sensor core components; 信息处理电路板,所述信息处理电路板设置在所述芯体复合外壳上,所述信息处理电路板用于控制并实现多个硅压阻压力传感器芯体的协同测量和切换输出。An information processing circuit board, the information processing circuit board is arranged on the composite shell of the core body, and the information processing circuit board is used to control and realize the coordinated measurement and switching output of multiple silicon piezoresistive pressure sensor core bodies. 2.根据权利要求1所述的一种芯体复合式硅压阻压力传感器,其特征在于,所述硅压阻压力传感器芯体还包括TO封装基座,所述TO封装基座的外围呈圆柱形的台阶状,所述硅压阻压力传感器芯片固化贴敷在所述TO封装基座的上表面,所述TO封装基座的下表面上设置有多个引脚,所述硅压阻压力传感器芯片的输入输出端还分别与多个引脚连接。2. A core composite silicon piezoresistive pressure sensor according to claim 1, characterized in that, the silicon piezoresistive pressure sensor core also includes a TO packaging base, and the periphery of the TO packaging base is in the shape of Cylindrical step shape, the silicon piezoresistive pressure sensor chip is solidified and pasted on the upper surface of the TO packaging base, a plurality of pins are arranged on the lower surface of the TO packaging base, and the silicon piezoresistive The input and output ends of the pressure sensor chip are also respectively connected to multiple pins. 3.根据权利要求2所述的一种芯体复合式硅压阻压力传感器,其特征在于,所述硅压阻压力传感器芯片通过硅橡胶固化贴敷在所述TO封装基座的上表面。3 . The core-composite silicon piezoresistive pressure sensor according to claim 2 , wherein the silicon piezoresistive pressure sensor chip is pasted on the upper surface of the TO packaging base through curing of silicon rubber. 4 . 4.根据权利要求1-3所述的一种芯体复合式硅压阻压力传感器,其特征在于,所述芯体复合外壳内设置有多个密封腔,多个所述硅压阻压力传感器芯体一一对应设置在所述多个密封腔内,所述芯体复合外壳还具有一导压孔,所述导压孔分别与所述多个密封腔相连通,用于将测试压力介质统一引入到所述多个密封腔内。4. A core composite silicon piezoresistive pressure sensor according to claim 1-3, wherein a plurality of sealed cavities are arranged in the core composite shell, and a plurality of silicon piezoresistive pressure sensors The cores are arranged one by one in the plurality of sealed cavities, and the composite shell of the core also has a pressure guide hole, and the pressure guide holes are respectively connected with the plurality of sealed cavities, and are used to test the pressure medium uniformly introduced into the plurality of sealed cavities. 5.根据权利要求4所述的一种芯体复合式硅压阻压力传感器,其特征在于,所述TO封装基座的下表面固化粘接在所述密封腔内,且所述多个引脚还穿出所述密封腔。5. A core compound silicon piezoresistive pressure sensor according to claim 4, characterized in that, the lower surface of the TO package base is solidified and bonded in the sealed cavity, and the plurality of leads The feet also protrude from the sealed cavity. 6.根据权利要求5所述的一种芯体复合式硅压阻压力传感器,其特征在于,所述TO封装基座的下表面通过环氧树脂结构胶固化粘接在所述密封腔内。6 . The core-composite silicon piezoresistive pressure sensor according to claim 5 , wherein the lower surface of the TO package base is cured and bonded in the sealed cavity by epoxy resin structural glue. 6 . 7.根据权利要求1所述的一种芯体复合式硅压阻压力传感器,其特征在于,所述芯体复合外壳采用金属结构材料加工。7 . The core-composite silicon piezoresistive pressure sensor according to claim 1 , wherein the core-composite shell is processed by metal structural materials. 8 . 8.根据权利要求2所述的一种芯体复合式硅压阻压力传感器,其特征在于,所述信息处理电路板设置有多个插孔,所述多个引脚还一一对应穿设在所述插孔内。8. A core compound silicon piezoresistive pressure sensor according to claim 2, characterized in that the information processing circuit board is provided with a plurality of jacks, and the plurality of pins are also pierced one by one within the jack. 9.根据权利要求8所述的一种芯体复合式硅压阻压力传感器,其特征在于,所述引脚通过焊接方式穿设在所述插孔内。9 . The core-composite silicon piezoresistive pressure sensor according to claim 8 , wherein the pins are welded through the sockets. 10 . 10.根据权利要求1所述的一种芯体复合式硅压阻压力传感器,其特征在于,信息处理电路板的信息处理电路包括运算放大模块、AD转换模块、信息处理模块,其中,多个硅压阻压力传感器芯体输出的电信号依次经所述运算放大模块进行放大处理,接着经AD转换模块进行AD转换,然后经信息处理模块进行处理并控制切换输出。10. A core compound silicon piezoresistive pressure sensor according to claim 1, wherein the information processing circuit of the information processing circuit board includes an operational amplification module, an AD conversion module, and an information processing module, wherein a plurality of The electrical signal output by the silicon piezoresistive pressure sensor core is sequentially amplified by the operational amplification module, then AD converted by the AD conversion module, and then processed by the information processing module to control switching output.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112345127A (en) * 2020-09-30 2021-02-09 北京自动化控制设备研究所 Data fusion method for double-core composite silicon piezoresistive pressure sensor
CN112729621A (en) * 2020-12-21 2021-04-30 苏州长风航空电子有限公司 Dual-redundancy pressure sensor and manufacturing method thereof
CN113788451A (en) * 2021-08-10 2021-12-14 北京自动化控制设备研究所 A packaging method for a composite range pressure sensing system
CN116046226A (en) * 2023-01-07 2023-05-02 常州大学怀德学院 A MEMS pressure sensor for aspect ratio etching

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100257936A1 (en) * 2009-04-09 2010-10-14 Kulite Semiconductor Products, Inc. Internally switched multiple range transducer
CN102798498A (en) * 2012-08-23 2012-11-28 沈阳工业大学 Multi-range integrated pressure sensor chip
CN102980711A (en) * 2011-09-06 2013-03-20 霍尼韦尔国际公司 Packaged sensor with multiple sensors elements
CN103105248A (en) * 2013-01-16 2013-05-15 西安交通大学 Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor
CN104165620A (en) * 2014-07-25 2014-11-26 北京科技大学 High-precision obliquity sensor with combined sensing elements
CN105424236A (en) * 2015-11-19 2016-03-23 南京信息工程大学 Multi-range array pressure sensing chip and detection method thereof
CN205607567U (en) * 2015-11-19 2016-09-28 南京信息工程大学 Multrirange array pressure sensing chip and check out test set thereof
CN106197824A (en) * 2016-08-26 2016-12-07 华景传感科技(无锡)有限公司 Pressure transducer and the automobile being suitable for
CN205940853U (en) * 2016-08-26 2017-02-08 华景传感科技(无锡)有限公司 Pressure sensor and car that is suitable for
US20190033154A1 (en) * 2016-05-24 2019-01-31 Kulite Semiconductor Products, Inc. Systems and methods for switched multi-transducer pressure sensors and compensation thereof

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100257936A1 (en) * 2009-04-09 2010-10-14 Kulite Semiconductor Products, Inc. Internally switched multiple range transducer
WO2010118326A1 (en) * 2009-04-09 2010-10-14 Kulite Semiconductor Products, Inc. Internally switched multiple range transducer
CN102980711A (en) * 2011-09-06 2013-03-20 霍尼韦尔国际公司 Packaged sensor with multiple sensors elements
CN102798498A (en) * 2012-08-23 2012-11-28 沈阳工业大学 Multi-range integrated pressure sensor chip
CN103105248A (en) * 2013-01-16 2013-05-15 西安交通大学 Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor
CN104165620A (en) * 2014-07-25 2014-11-26 北京科技大学 High-precision obliquity sensor with combined sensing elements
CN105424236A (en) * 2015-11-19 2016-03-23 南京信息工程大学 Multi-range array pressure sensing chip and detection method thereof
CN205607567U (en) * 2015-11-19 2016-09-28 南京信息工程大学 Multrirange array pressure sensing chip and check out test set thereof
US20190033154A1 (en) * 2016-05-24 2019-01-31 Kulite Semiconductor Products, Inc. Systems and methods for switched multi-transducer pressure sensors and compensation thereof
CN106197824A (en) * 2016-08-26 2016-12-07 华景传感科技(无锡)有限公司 Pressure transducer and the automobile being suitable for
CN205940853U (en) * 2016-08-26 2017-02-08 华景传感科技(无锡)有限公司 Pressure sensor and car that is suitable for

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112345127A (en) * 2020-09-30 2021-02-09 北京自动化控制设备研究所 Data fusion method for double-core composite silicon piezoresistive pressure sensor
CN112729621A (en) * 2020-12-21 2021-04-30 苏州长风航空电子有限公司 Dual-redundancy pressure sensor and manufacturing method thereof
CN113788451A (en) * 2021-08-10 2021-12-14 北京自动化控制设备研究所 A packaging method for a composite range pressure sensing system
CN113788451B (en) * 2021-08-10 2024-04-02 北京自动化控制设备研究所 Packaging method of composite range pressure sensing system
CN116046226A (en) * 2023-01-07 2023-05-02 常州大学怀德学院 A MEMS pressure sensor for aspect ratio etching
CN116046226B (en) * 2023-01-07 2023-12-29 厚盟深科(杭州)科技有限公司 MEMS pressure sensor for depth-to-width ratio etching

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