CN110491841A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110491841A
CN110491841A CN201910392954.4A CN201910392954A CN110491841A CN 110491841 A CN110491841 A CN 110491841A CN 201910392954 A CN201910392954 A CN 201910392954A CN 110491841 A CN110491841 A CN 110491841A
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CN
China
Prior art keywords
signal
semiconductor element
signal terminal
electrode
seal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910392954.4A
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English (en)
Inventor
川岛崇功
尾崎仁
矶村拓哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Toyota Motor Corp
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Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of CN110491841A publication Critical patent/CN110491841A/zh
Pending legal-status Critical Current

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Abstract

本发明提供一种半导体装置，具备：第一半导体元件，具有多个信号电极；第二半导体元件，具有多个信号电极；密封体，将第一半导体元件及第二半导体元件密封；及多个信号端子，从密封体突出。多个信号端子包括第一信号端子、第二信号端子及共用信号端子。第一信号端子在密封体的内部连接于第一半导体元件的多个信号电极的一个。第二信号端子在密封体的内部连接于第二半导体元件的多个信号电极的一个。并且，共用信号端子在密封体的内部连接于第一半导体元件的多个信号电极的另一个和第二半导体元件的多个信号电极的另一个这两者。

Description

半导体装置
技术领域
本说明书公开的技术涉及具备多个半导体元件的半导体装置。
背景技术
在日本特开2017-147316号公报中公开了一种半导体装置。该半导体装置具备配置于密封体内的多个半导体元件和遍及密封体的内外而延伸的多个信号端子。在各半导体元件设置有多个信号电极，在各信号电极上连接有对应的一个信号端子。
发明内容
在以往的半导体装置中，需要与信号电极相同数量的信号端子。当半导体装置具备多个半导体元件时，信号电极的总数变多，因此半导体装置所需的信号端子的数量也变多。在此，多个信号端子与外部的连接器等连接，因此需要保持规定的间隔而排列。因此，当信号端子的数量变多时，需要为了使该信号端子排列而使半导体装置大型化。本说明书提供一种在具备多个半导体元件的半导体装置中能够削减需要的信号端子的技术。
本说明书公开的半导体装置具备：第一半导体元件，具有多个信号电极；第二半导体元件，具有多个信号电极；密封体，将第一半导体元件及第二半导体元件密封；及多个信号端子，从密封体突出。多个信号端子包括第一信号端子、第二信号端子及共用信号端子。第一信号端子在密封体的内部连接于第一半导体元件的多个信号电极的一个。第二信号端子在密封体的内部连接于第二半导体元件的多个信号电极的一个。并且，共用信号端子在密封体的内部连接于第一半导体元件的多个信号电极的另一个和第二半导体元件的多个信号电极的另一个这两者。
在上述的半导体装置中，在多个信号端子中包括连接于第一半导体元件的信号电极和第二半导体元件的信号电极这两者的共用信号端子。根据这样的结构，相对于多个半导体元件具有的信号电极的总数，能够削减需要的信号端子的数量。在此，为了使信号端子的数量最小化，也可考虑使多个信号端子全部成为由多个半导体元件共用的共用信号端子。然而，若将多个信号端子全部置换为共用信号端子，则相对于各半导体元件无法独立通信。因此，在上述的半导体装置中，在多个信号端子中还包括仅连接于第一半导体元件的信号电极的第一信号端子和仅连接于第二半导体元件的信号电极的第二信号端子。由此，能够维持相对于各半导体元件的独立的通信路径，并削减作为整体而需要的信号端子的数量。
附图说明
图1示出半导体装置10的外观。
图2示出半导体装置10的截面构造。
图3是省略密封体16而示出半导体装置10的内部构造的俯视图。
图4是省略密封体16而示出半导体装置10的内部构造的分解图。
图5示出半导体元件22、24、26的信号电极22c、24c、26c与多个信号端子36的连接部分。
图6是图5中的VI-VI线处的剖视图。
图7是示出半导体元件22、24、26的结构的电路图。
图8示出半导体装置10的制造方法中的第一回流工序。
图9示出半导体装置10的制造方法中的线键合工序及第二回流工序。
图10示出半导体装置10的制造方法中的密封体16的成形工序。
图11示出一变形例的半导体装置10a。
图12示出另一变形例的半导体装置10b。
图13示出另一变形例的半导体装置10c。
具体实施方式
在本技术的一实施方式中，共用信号端子可以在密封体的内部具有沿着多个信号端子的排列方向延伸的侧方延伸部。根据这样的结构，能够使共用信号端子与互相分离配置的多个信号电极接近或接触。
在上述的实施方式中，侧方延伸部可以延伸至与共用信号端子相邻的其他的信号端子的相反侧。根据这样的结构，能够使共用信号端子与隔有其他的信号电极的两个信号电极接近或接触。
在上述的实施方式中，侧方延伸部可以和与共用信号端子相邻的其他的信号端子立体交叉。根据这样的结构，能够不招致半导体装置的大型化地在密封体的内部设置侧方延伸部。
或者，侧方延伸部可以位于与共用信号端子相邻的其他的信号端子与连接有该其他的信号端子的第一半导体元件或第二半导体元件之间。根据这样的结构，共用信号端子的侧方延伸部和与共用信号端子相邻的其他的信号端子不重叠，因此能够将包括共用信号端子的多个信号端子用单个导体板(例如引线框架)形成。
在本技术的一实施方式中，半导体装置可以还具有在密封体的内部连接于侧方延伸部的支撑部。在该情况下，支撑部可以在第一信号端子与第二信号端子之间从密封体突出。根据这样的结构，在成形密封体时，能够从密封体的外部经由支撑部而支撑侧方延伸部。
在本技术的一实施方式中，半导体装置可以还具备由密封体密封并且具有多个信号电极的第三半导体元件。在该情况下，共用信号端子可以在密封体的内部还连接于第三半导体元件的多个信号电极的一个。这样，共用信号端子可以由三个以上的半导体元件的信号电极共用。
在本技术的一实施方式中，第一半导体元件和第二半导体元件分别可以具有温度检测部。另外，第一半导体元件的多个信号电极和第二半导体元件的多个信号电极分别可以具有连接于温度检测部的一端的第一温度信号电极和连接于温度检测部的另一端的第二温度信号电极。在该情况下，第一信号端子可以连接于第一半导体元件的第一温度信号电极，第二信号端子可以连接于第二半导体元件的第一温度信号电极。并且，共用信号端子可以连接于第一半导体元件的第二温度信号电极和第二半导体元件的第二温度信号电极这两者。根据这样的结构，能够采用共用信号端子来削减信号端子的数量，并将来自多个半导体元件的温度检测部的信号分别向外部输出。
在本技术的一实施方式中，第一半导体元件和第二半导体元件分别可以具有电流检测部。另外，第一半导体元件的多个信号电极和第二半导体元件的多个信号电极分别可以具有连接于电流检测部的一端的电流信号电极和输出针对电流信号电极所输出的信号的基准电压的基准电压信号电极。在该情况下，第一信号端子可以连接于第一半导体元件的电流信号电极，第二信号端子可以连接于第二半导体元件的电流信号电极。并且，共用信号端子可以连接于第一半导体元件的基准电压信号电极和第二半导体元件的基准电压信号电极这两者。根据这样的结构，能够采用共用信号端子来削减信号端子的数量，并根据多个半导体元件的电流检测部输出的信号来分别检测在各半导体元件中流动的电流。
在本技术的一实施方式中，第一半导体元件和第二半导体元件分别可以是具有栅极的开关元件。另外，第一半导体元件的多个信号电极和第二半导体元件的所述多个信号电极分别可以具有连接于栅极的栅极信号电极。在该情况下，共用信号端子可以在密封体的内部连接于第一半导体元件的栅极信号电极及第二半导体元件的栅极信号电极。根据这样的结构，能够采用共用信号端子来削减信号端子的数量，并且利用共用的信号来同时控制多个半导体元件。
以下，参照附图对本发明的代表性且非限定性的具体例进行详细说明。该详细说明单纯意在将用于实施本发明的优选例的详情向本领域技术人员展示，并非意在限定本发明的范围。另外，以下公开的追加性的特征以及发明能够为了提供进一步改善的半导体装置以及其使用方法及制造方法而与其他特征或发明相独立地或一起使用。
另外，在以下的详细说明中公开的特征和工序的组合并非在最广泛的含义下实施本发明时所必需的，仅特别为了说明本发明的代表性的具体例而记载。而且，上述及下述的代表性的具体例的各种特征以及独立及从属权利要求所记载的内容的各种特征在提供本发明的追加性且有用的实施方式时并非必需如这里记载的具体例这样或按照列举的顺序进行组合。
本说明书和/或权利要求书所记载的全部特征意在与实施例和/或权利要求所记载的特征的结构相独立地作为对于申请当初的公开以及声明的特定事项的限定而分别且互相独立地公开。而且，所有与数值范围及组或集团相关的记载具有作为对于申请当初的公开以及声明的特定事项的限定而公开其中间的结构的意图。
参照附图，对实施例的半导体装置10进行说明。半导体装置10例如可以在电动汽车中在转换器、变换器之类的电力变换电路中采用。在此所说的电动汽车广泛地意味着具有驱动车轮的电动机的汽车，例如包括通过外部的电力而充电的电动汽车、除了电动机之外还具有发动机的混合动力车及以燃料电池为电源的燃料电池车等。
如图1～图4所示，半导体装置10具备第一导体板12、第二导体板14、多个半导体元件22、24、26及密封体16。第一导体板12与第二导体板14互相平行，且互相对向。虽是一例，多个半导体元件22、24、26包括第一半导体元件22、第二半导体元件24及第三半导体元件26。第二半导体元件24位于第一半导体元件22与第三半导体元件26之间，多个半导体元件22、24、26沿着第一导体板12及第二导体板14的长度方向(图2、图3中的左右方向)排列。多个半导体元件22、24、26并联地配置于第一导体板12与第二导体板14之间。多个半导体元件22、24、26由密封体16密封。
第一导体板12及第二导体板14由铜或其他金属之类的导体形成。第一导体板12与第二导体板14隔着多个半导体元件22、24、26而互相对向。各半导体元件22、24、26接合于第一导体板12，并且也接合于第二导体板14。需要说明的是，在各半导体元件22、24、26与第一导体板12之间设置有导体间隔件18。在此，第一导体板12及第二导体板14的具体的结构没有特别的限定。例如，第一导体板12和第二导体板14中的至少一方也可以是例如DBC(Direct Bonded Copper：直接敷铜)基板之类的具有绝缘体(例如陶瓷)的中间层的绝缘基板。即，第一导体板12和第二导体板14各自也可以不是整体由导体构成。
第一半导体元件22、第二半导体元件24及第三半导体元件26是电力电路用的所谓功率半导体元件，互相具有相同的结构。第一半导体元件22具有上表面电极22a、下表面电极22b及多个信号电极22c。上表面电极22a和下表面电极22b是电力用的电极，多个信号电极22c是信号用的电极。上表面电极22a及多个信号电极22c位于第一半导体元件22的上表面，下表面电极22b位于第一半导体元件22的下表面。上表面电极22a经由导体间隔件18而电连接于第一导体板12，下表面电极22b电连接于第二导体板14。同样，第二半导体元件24及第三半导体元件26也分别具有上表面电极24a、26a、下表面电极24b、26b及多个信号电极24c、26c。上表面电极24a、26a经由导体间隔件18而电连接于第一导体板12，下表面电极24b、26b电连接于第二导体板14。
虽是一例，本实施例中的半导体元件22、24、26是具有栅极、发射极及集电极的IGBT(Insulated Gate Bipolar Transistor：绝缘栅双极型晶体管)。IGBT的发射极连接于上表面电极22a、24a、26a，IGBT的集电极连接于下表面电极22b、24b、26b。不过，半导体元件22、24、26的具体的种类、构造没有特别的限定。半导体元件22、24、26也可以是还具有二极管构造的RC(Reverse Conducting：反向导通)-IGBT元件。或者，半导体元件22、24、26也可以取代IGBT或进一步是例如MOSFET(Metal-Oxide-Semiconductor Field-EffectTransistor：金属氧化物半导体场效晶体管)。另外，在半导体元件22、24、26中使用的半导体材料也没有特别的限定，例如可以是硅(Si)、碳化硅(SiC)或氮化镓(GaN)之类的氮化物半导体。
密封体16没有特别的限定，但例如可以由环氧树脂之类的热固化性树脂或其他的绝缘体构成。密封体16也被称作例如模制树脂或封装。半导体装置10不限于三个半导体元件22、24、26，也可以仅具备两个半导体元件，还可以具备比三个多的半导体元件。即使在该情况下，多个半导体元件22、24、26也由单个密封体16密封，能够在第一导体板12及第二导体板14之间并联或串联地配置。
第一导体板12及第二导体板14不仅与多个半导体元件22、24、26电连接，也与多个半导体元件22、24、26热连接。另外，第一导体板12及第二导体板14分别在密封体16的表面露出，能够将各半导体元件22、24、26的热向密封体16的外部放出。由此，本实施例的半导体装置10具有在多个半导体元件22、24、26的两侧配置有散热板的双面冷却构造。
半导体装置10还具备第一电力端子32和两个第二电力端子34。各电力端子32、34由铜或铝之类的导体构成。各电力端子32、34是所谓的引线，从密封体16的内部延伸到外部。第一电力端子32在密封体16的内部连接于第一导体板12。各第二电力端子34在密封体16的内部连接于第二导体板14。由此，多个半导体元件22、24、26在第一电力端子32与各第二电力端子34之间并联地电连接。虽是一例，第一电力端子32通过软钎焊而接合于第一导体板12，各第二电力端子34一体地形成于第二导体板14。不过，第一电力端子32也可以与第一导体板12一体地形成。另外，各第二电力端子34也可以通过例如软钎焊而接合于第二导体板14。
半导体装置10还具备多个信号端子36。各信号端子36由铜或铝之类的导体构成。各信号端子36是所谓的引线，从密封体16的内部延伸到外部。多个信号端子36沿着密封体16的长度方向(图2、3的左右方向)排列，从密封体16向同一方向突出。虽是一例，本实施例的半导体装置10具有11根信号端子36。多个信号端子36在密封体16的内部经由键合线40而连接于半导体元件22、24、26的多个信号电极22c、24c、26c。需要说明的是，多个信号端子36也可以不经由键合线40而直接连接于多个信号电极22c、24c、26c。
如图5所示，多个信号端子36包括第一信号端子36a、第二信号端子36b、第三信号端子36c及共用信号端子36d。各第一信号端子36a在密封体16的内部连接于第一半导体元件22的多个信号电极22c的一个。各第二信号端子36b在密封体16的内部连接于第二半导体元件24的多个信号电极24c的一个。各第三信号端子36c在密封体16的内部连接于第三半导体元件26的多个信号电极26c的一个。并且，各共用信号端子36d在密封体16的内部连接于第一半导体元件22的多个信号电极22c的一个、第二半导体元件24的多个信号电极24c的一个及第三半导体元件26的多个信号电极26c的一个这三者。即，各共用信号端子36d连接于多个半导体元件22、24、26的信号电极22c、24c、26c。
在本实施例的半导体装置10中，在多个信号端子36中包括连接于多个半导体元件22、24、26的信号电极22c、24c、26c的共用信号端子36d。根据这样的结构，相对于存在于多个半导体元件22、24、26的信号电极22c、24c、26c的总数，能够削减需要的信号端子36的数量。在此，为了使信号端子36的数量最小化，也可以考虑使多个信号端子36全部成为由多个半导体元件22、24、26共用的共用信号端子36d。然而，若将多个信号端子36全部置换为共用信号端子36d，则相对于各半导体元件22、24、26无法独立通信。因此，在本实施例的半导体装置10中，在多个信号端子36中还包括仅连接于第一半导体元件22的信号电极22c的第一信号端子36a、仅连接于第二半导体元件24的信号电极24c的第二信号端子36b及仅连接于第三半导体元件26的信号电极26c的第三信号端子36c。由此，能够维持相对于各半导体元件22、24、26的独立的通信路径，并削减作为整体而需要的信号端子36的数量。
如图5、图6所示，共用信号端子36d在密封体16的内部具有沿着多个信号端子36的排列方向延伸的侧方延伸部37。根据这样的结构，能够使共用信号端子36d与互相分离配置的多个信号电极22c、24c、26c接近或接触。另外，侧方延伸部37相对于共用信号端子36d从密封体16突出的方向形成角度，因此能够也作为将共用信号端子36d相对于密封体16牢固地固定的锚定件来发挥功能。需要说明的是，图5中的点J表示共用信号端子36d中的接合点，构成共用信号端子36d的若干导体片在接合点J处互相接合。在其他的附图中也是同样，点J表示共用信号端子36d中的接合点。
侧方延伸部37延伸至与共用信号端子36d相邻的其他的信号端子的相反侧。根据这样的结构，能够使共用信号端子36d与隔有其他的信号电极22c、24c、26c的多个信号电极22c、24c、26c接近或接触。虽是一例，本实施例中的侧方延伸部37和与共用信号端子36d相邻的其他的信号端子36a、36b立体交叉(参照图6)。即，侧方延伸部37以保持间隙的状态横穿相邻的其他的信号端子36的上方或下方。根据这样的结构，能够不招致半导体装置10的大型化地在密封体16的内部设置侧方延伸部37。
在本实施例的半导体装置10中，共用信号端子36d由三个半导体元件22、24、26共用。然而，共用信号端子36d也可以仅由两个半导体元件(例如，第一半导体元件22和第二半导体元件24)共用。或者，在半导体装置10具备超过三个的半导体元件的情况下，共用信号端子36d也可以由超过四个的半导体元件共用。
半导体元件22、24、26具备具有不同功能的多个信号电极22c、24c、26c。关于这一点，共用信号端子36d不限定于特定的信号电极22c、24c、26c，无论对于信号电极22c、24c、26c的哪一个都能采用。如图5、图7所示，本实施例中的半导体元件22、24、26具有栅极信号电极G、第一温度信号电极A、第二温度信号电极K、电流信号电极SE及基准电压信号电极KE作为前述的多个信号电极22c、24c、26c。并且，共用信号端子36d分别采用于第二温度信号电极K和基准电压信号电极KE。另一方面，对栅极信号电极G、第一温度信号电极A及电流信号电极SE采用了独立的信号端子(即，第一信号端子36a、第二信号端子36b或第三信号端子36c)。
栅极信号电极G是供针对半导体元件22、24、26的栅极驱动信号输入的信号电极。栅极信号电极G连接于半导体元件22、24、26的栅极(在本实施例中是IGBT的栅极)。在第一半导体元件22的栅极信号电极G上连接有第一信号端子36a的一个，在第二半导体元件24的栅极信号电极G上连接有第二信号端子36b的一个，在第三半导体元件26的栅极信号电极G上连接有第三信号端子36c的一个。这样，若对栅极信号电极G采用了独立的信号端子36a、36b、36c，则能够向各半导体元件22、24、26提供不同的栅极驱动信号。因此，例如能够仅使三个半导体元件22、24、26的一部分选择性地动作。
第一温度信号电极A和第二温度信号电极K是输出与半导体元件22、24、26的温度对应的信号的信号电极。第一温度信号电极A和第二温度信号电极K连接于在半导体元件22、24、26内设置的温度传感器28。虽是一例，温度传感器28是温度感测二极管。第一温度信号电极A连接于温度感测二极管的阳极，第二温度信号电极K连接于温度感测二极管的阴极。在第一半导体元件22的第一温度信号电极A上连接有第一信号端子36a的一个，在第二半导体元件24的第一温度信号电极A上连接有第二信号端子36b的一个，在第三半导体元件26的第一温度信号电极A上连接有第三信号端子36c的一个。另一方面，在各半导体元件22、24、26的第二温度信号电极K上连接有共用信号端子36d的一个。根据这样的结构，能够向多个半导体元件22、24、26的各温度传感器28经由共用信号端子36d而供给基准电压(例如，接地电压)。并且，多个半导体元件22、24、26的各温度传感器28输出的信号经由第一信号端子36a、第二信号端子36b及第三信号端子36c而分别独立地输出。因此，能够采用共用信号端子36d，并基于多个半导体元件22、24、26的各温度传感器28输出的信号来分别检测在各半导体元件22、24、26中流动的电流。
电流信号电极SE是输出与在半导体元件22、24、26中流动的电流对应的信号的信号电极。电流信号电极SE连接于在半导体元件22、24、26内设置的电流传感器30。虽是一例，本实施例中的电流传感器30输出与在半导体元件22、24、26中流动的电流成比例的微小电流。基准电压信号电极KE连接于IGBT的发射极，将IGBT的发射极的电压(这与上表面电极22a、24a、26a的电压相等)作为基准电压而输出。该基准电压作为对电流信号电极SE所输出的信号进行处理时的基准电压来使用。在第一半导体元件22的电流信号电极SE上连接有第一信号端子36a的一个，在第二半导体元件24的电流信号电极SE上连接有第二信号端子36b的一个，在第三半导体元件26的电流信号电极SE上连接有第三信号端子36c的一个。另一方面，在各半导体元件22、24、26的基准电压信号电极KE上连接有共用信号端子36d的一个。根据这样的结构，能够采用共用信号端子36d，并基于多个半导体元件22、24、26的各电流传感器30输出的信号来分别检测在各半导体元件22、24、26中流动的电流。
接着，对半导体装置10的制造方法的一例进行说明。在该制造方法中，如图8所示，实施第一回流工序。在第一回流工序中，首先，准备引线框架8。在引线框架8一体地形成有第二导体板14、第一电力端子32、两个第二电力端子34及多个信号端子36。接着，将多个半导体元件22、24、26与多个导体间隔件18一起例如通过软钎焊而接合于引线框架8的第二导体板14上。由此，图8所示的半成品完成。
接着，如图9所示，实施键合工序和第二回流工序。在键合工序中，将引线框架8的多个信号端子36经由键合线40而连接于多个半导体元件22、24、26的信号电极22c、24c、26c。接着，在第二回流工序中，将第一导体板12例如通过软钎焊而接合于多个导体间隔件18上。此时，引线框架8的第一电力端子32也例如通过软钎焊而接合于第一导体板12。由此，图9所示的半成品完成。
接着，如图10所示，实施密封体16的成形工序。在该成形工序中，例如通过嵌件成形来成形密封体16。之后，通过研磨密封体16的表面来使第一导体板12及第二导体板14在密封体16的表面露出。由此，图10所示的半成品完成。之后，通过切除引线框架8的不要部分(所谓的系杆)，半导体装置10完成。
以下，对半导体装置10的若干变形例进行说明。图11示出一变形例的半导体装置10a。在该半导体装置10a中，与上述的半导体装置10相比，附加了支撑部38。其他的结构与上述的半导体装置10相同。支撑部38在密封体16的内部连接于侧方延伸部37。支撑部38在与侧方延伸部37形成角度的方向上延伸，在多个信号端子之间从密封体16突出。根据这样的结构，在成形密封体16时，能够从密封体16的外部经由支撑部38而支撑侧方延伸部37。这样的支撑部38例如可以设置于前述的引线框架8。
图12示出另一变形例的半导体装置10b。在该半导体装置10b中，与上述的半导体装置10相比，变更了一方的共用信号端子36d的结构。其他的结构与上述的半导体装置10相同。如图12所示，共用信号端子36d也可以位于与共用信号端子36d相邻的其他的信号端子36a、36b与连接有该其他的信号端子36a、36b的半导体元件22、24之间。根据这样的结构，共用信号端子36d的侧方延伸部37和与共用信号端子36d相邻的其他的信号端子36a、36b不重叠，因此能够将包括共用信号端子36d的多个信号端子36用单个导体板(例如引线框架8)形成。
图13示出另一变形例的半导体装置10c。在该半导体装置10c中，对栅极信号电极G和电流信号电极SE采用了共用信号端子36d，在这一点上与上述的半导体装置10不同。其他的结构与上述的半导体装置10相同。在一方的共用信号端子36d上分别连接有多个半导体元件22、24、26的栅极信号电极G。根据这样的结构，能够采用共用信号端子36d来削减信号端子36的数量，并且利用共用的栅极驱动信号来同时控制多个半导体元件22、24、26。一方的共用信号端子36d分别连接于多个半导体元件22、24、26的电流信号电极SE。根据这样的结构，从共用信号端子36d输出的信号对应于在多个半导体元件22、24、26中流动的电流的总和。若假定为在多个半导体元件22、24、26中流动的电流互相相等，则能够基于从共用信号端子36d输出的信号来推定在各半导体元件22、24、26中流动的电流。

Claims (10)

1.一种半导体装置，具备：
第一半导体元件，具有多个信号电极；
第二半导体元件，具有多个信号电极；
密封体，将所述第一半导体元件及所述第二半导体元件密封；及
多个信号端子，从所述密封体突出，
所述多个信号端子包括第一信号端子、第二信号端子及共用信号端子，
所述第一信号端子在所述密封体的内部连接于所述第一半导体元件的所述多个信号电极的一个，
所述第二信号端子在所述密封体的内部连接于所述第二半导体元件的所述多个信号电极的一个，
所述共用信号端子在所述密封体的内部连接于所述第一半导体元件的所述多个信号电极的另一个和所述第二半导体元件的所述多个信号电极的另一个这两者。
2.根据权利要求1所述的半导体装置，
所述共用信号端子在所述密封体的内部具有沿着所述多个信号端子的排列方向延伸的侧方延伸部。
3.根据权利要求2所述的半导体装置，
所述侧方延伸部延伸至与所述共用信号端子相邻的其他的所述信号端子的相反侧。
4.根据权利要求3所述的半导体装置，
所述侧方延伸部和与所述共用信号端子相邻的其他的所述信号端子立体交叉。
5.根据权利要求3所述的半导体装置，
所述侧方延伸部位于与所述共用信号端子相邻的其他的所述信号端子与连接有该其他的信号端子的所述第一半导体元件或所述第二半导体元件之间。
6.根据权利要求2～5中任一项所述的半导体装置，
还具有在所述密封体的内部连接于所述侧方延伸部的支撑部，
所述支撑部在所述第一信号端子与所述第二信号端子之间从所述密封体突出。
7.根据权利要求1～6中任一项所述的半导体装置，
还具备由所述密封体密封并且具有多个信号电极的第三半导体元件，
所述共用信号端子在所述密封体的内部还连接于所述第三半导体元件的所述多个信号电极的一个。
8.根据权利要求1～7中任一项所述的半导体装置，
所述第一半导体元件和所述第二半导体元件分别具有温度检测部，
所述第一半导体元件的所述多个信号电极和所述第二半导体元件的所述多个信号电极分别具有连接于所述温度检测部的一端的第一温度信号电极和连接于所述温度检测部的另一端的第二温度信号电极，
所述第一信号端子连接于所述第一半导体元件的所述第一温度信号电极，
所述第二信号端子连接于所述第二半导体元件的所述第一温度信号电极，
所述共用信号端子连接于所述第一半导体元件的所述第二温度信号电极和所述第二半导体元件的所述第二温度信号电极这两者。
9.根据权利要求1～7中任一项所述的半导体装置，
所述第一半导体元件和所述第二半导体元件分别具有电流检测部，
所述第一半导体元件的所述多个信号电极和所述第二半导体元件的所述多个信号电极分别具有连接于所述电流检测部的一端的电流信号电极和输出针对所述电流信号电极所输出的信号的基准电压的基准电压信号电极，
所述第一信号端子连接于所述第一半导体元件的所述电流信号电极，
所述第二信号端子连接于所述第二半导体元件的所述电流信号电极，
所述共用信号端子连接于所述第一半导体元件的所述基准电压信号电极和所述第二半导体元件的所述基准电压信号电极这两者。
10.根据权利要求1～7中任一项所述的半导体装置，
所述第一半导体元件和所述第二半导体元件分别是具有栅极的开关元件，
所述第一半导体元件的所述多个信号电极和所述第二半导体元件的所述多个信号电极分别具有连接于所述栅极的栅极信号电极，
所述共用信号端子在所述密封体的内部连接于所述第一半导体元件的所述栅极信号电极和所述第二半导体元件的所述栅极信号电极。
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