CN110416061B - 形成低k层的方法和形成半导体装置的方法 - Google Patents
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2018-0048568 | 2018-04-26 | ||
| KR1020180048568A KR102541454B1 (ko) | 2018-04-26 | 2018-04-26 | 저유전막의 형성 방법, 및 반도체 소자의 형성방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110416061A CN110416061A (zh) | 2019-11-05 |
| CN110416061B true CN110416061B (zh) | 2024-04-30 |
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| EP4092154A1 (en) * | 2015-06-16 | 2022-11-23 | Versum Materials US, LLC | Processes for depositing silicon-containing films using same |
| US12142479B2 (en) * | 2020-01-17 | 2024-11-12 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| KR102830540B1 (ko) * | 2021-07-29 | 2025-07-07 | 삼성전자주식회사 | 반도체 장치 |
| JP7437362B2 (ja) * | 2021-09-28 | 2024-02-22 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、基板処理方法及びプログラム |
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2018
- 2018-04-26 KR KR1020180048568A patent/KR102541454B1/ko active Active
- 2018-12-12 US US16/217,339 patent/US10861695B2/en active Active
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- 2019-04-12 CN CN201910292773.4A patent/CN110416061B/zh active Active
- 2019-04-17 JP JP2019078428A patent/JP7256675B2/ja active Active
- 2019-04-25 EP EP19171041.7A patent/EP3561860A1/en not_active Withdrawn
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| US6486082B1 (en) * | 2001-06-18 | 2002-11-26 | Applied Materials, Inc. | CVD plasma assisted lower dielectric constant sicoh film |
| CN103187268A (zh) * | 2011-12-27 | 2013-07-03 | 东京毅力科创株式会社 | 碳氮氧化硅膜的形成方法 |
| CN105493248A (zh) * | 2013-09-30 | 2016-04-13 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置、衬底处理系统及记录介质 |
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| KR102541454B1 (ko) | 2023-06-09 |
| SG10201903205RA (en) | 2019-11-28 |
| US10861695B2 (en) | 2020-12-08 |
| CN110416061A (zh) | 2019-11-05 |
| JP7256675B2 (ja) | 2023-04-12 |
| JP2019192907A (ja) | 2019-10-31 |
| US20190333754A1 (en) | 2019-10-31 |
| EP3561860A1 (en) | 2019-10-30 |
| KR20190124509A (ko) | 2019-11-05 |
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