CN110373653B - 具有多区域引射器块的化学气相沉积设备 - Google Patents

具有多区域引射器块的化学气相沉积设备 Download PDF

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Publication number
CN110373653B
CN110373653B CN201910300090.9A CN201910300090A CN110373653B CN 110373653 B CN110373653 B CN 110373653B CN 201910300090 A CN201910300090 A CN 201910300090A CN 110373653 B CN110373653 B CN 110373653B
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reactant gas
region
reactant
zone
gas distribution
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CN110373653A (zh
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B·米特洛夫克
I·昆奇
J·伽玛拉
曼德尔·德什潘德
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Veeco Instruments Inc
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Veeco Instruments Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
CN201910300090.9A 2018-04-13 2019-04-15 具有多区域引射器块的化学气相沉积设备 Active CN110373653B (zh)

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US201862657255P 2018-04-13 2018-04-13
US62/657,255 2018-04-13

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US (1) US12584223B2 (enExample)
JP (1) JP7495882B2 (enExample)
CN (2) CN110373653B (enExample)
DE (1) DE112019001953T5 (enExample)
TW (2) TWM597506U (enExample)
WO (1) WO2019200312A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI770201B (zh) * 2017-06-23 2022-07-11 德商馬克專利公司 選擇性膜成長之原子層沉積之方法
WO2019200312A1 (en) * 2018-04-13 2019-10-17 Veeco Instruments Inc. Chemical vapor deposition apparatus with multi-zone injector block
US11225716B2 (en) * 2019-11-27 2022-01-18 Tokyo Electron Limited Internally cooled multi-hole injectors for delivery of process chemicals

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6800139B1 (en) * 1999-08-31 2004-10-05 Tokyo Electron Limited Film deposition apparatus and method
CN105441904A (zh) * 2014-06-18 2016-03-30 中微半导体设备(上海)有限公司 气体喷淋装置、化学气相沉积装置和方法
CN106906453A (zh) * 2015-12-14 2017-06-30 朗姆研究公司 喷头组件
CN210030883U (zh) * 2018-04-13 2020-02-07 维高仪器股份有限公司 具有多区域引射器块的化学气相沉积设备

Family Cites Families (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156090A (en) 1961-09-18 1964-11-10 Harold R Kaufman Ion rocket
DE1901037A1 (de) 1969-01-07 1971-02-25 Schmidt & Haensch Franz Lichtelektrisches Farbpyrometer
US3913320A (en) 1974-11-13 1975-10-21 Ion Tech Inc Electron-bombardment ion sources
US4565618A (en) 1983-05-17 1986-01-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Apparatus for producing diamondlike carbon flakes
US4929322A (en) 1985-09-30 1990-05-29 Union Carbide Corporation Apparatus and process for arc vapor depositing a coating in an evacuated chamber
US4783593A (en) 1985-12-26 1988-11-08 General Electric Company Optical system for wide angle IR imager
US4708493A (en) 1986-05-19 1987-11-24 Quantum Logic Corporation Apparatus for remote measurement of temperatures
JPH07104210B2 (ja) 1987-03-27 1995-11-13 ミノルタ株式会社 放射温度計
US4873467A (en) 1988-05-23 1989-10-10 Kaufman Harold R Ion source with particular grid assembly
CZ293994B6 (cs) 1994-04-25 2004-09-15 The Gillette Company Holicí břit, způsob jeho výroby, a holicí jednotka
US5433386A (en) 1994-06-24 1995-07-18 Siemens Automotive L.P. Fuel injector having an adjustment tube that discourages support for a vapor bubble dome
KR960010901A (ko) 1994-09-30 1996-04-20 김광호 고체 유기화합물 전용 버블러 장치
GB9503305D0 (en) 1995-02-20 1995-04-12 Univ Nanyang Filtered cathodic arc source
US5545252A (en) 1995-03-01 1996-08-13 The Perkin-Elmer Corporation Flow regulation in gas chromatograph
US5673562A (en) 1996-02-23 1997-10-07 L'air Liquide, S.A. Bulk delivery of ultra-high purity gases at high flow rates
US6042900A (en) 1996-03-12 2000-03-28 Alexander Rakhimov CVD method for forming diamond films
GB9615548D0 (en) 1996-07-24 1996-09-04 Univ Nanyang Cathode arc source and graphite target
US6217662B1 (en) 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US5759281A (en) 1997-06-30 1998-06-02 Emcore Corporation CVD reactor for uniform heating with radiant heating filaments
JPH1154496A (ja) 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
GB9722650D0 (en) 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source with target feeding apparatus
US6116080A (en) 1998-04-17 2000-09-12 Lorex Industries, Inc. Apparatus and methods for performing acoustical measurements
US6423613B1 (en) 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
CA2256847A1 (en) 1998-12-22 2000-06-22 Munther Kandah Particle-free cathodic arc carbon ion source
US6464891B1 (en) 1999-03-17 2002-10-15 Veeco Instruments, Inc. Method for repetitive ion beam processing with a carbon containing ion beam
US6231933B1 (en) 1999-03-18 2001-05-15 Primaxx, Inc. Method and apparatus for metal oxide chemical vapor deposition on a substrate surface
US6465793B1 (en) 1999-03-31 2002-10-15 The Regents Of The University Of California Arc initiation in cathodic arc plasma sources
US6465780B1 (en) 1999-03-31 2002-10-15 The Regents Of The University Of California Filters for cathodic arc plasmas
US6548817B1 (en) 1999-03-31 2003-04-15 The Regents Of The University Of California Miniaturized cathodic arc plasma source
JP2001127169A (ja) 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2002110567A (ja) 2000-10-03 2002-04-12 Mitsubishi Electric Corp 化学気相成長装置および該装置による半導体ウエハの成膜方法
JP4694768B2 (ja) 2001-01-04 2011-06-08 レーザー・イメージング・システムズ・ゲーエムベーハー・ウント・カンパニー・カーゲー 直接パターンライター
US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
JP3611796B2 (ja) 2001-02-28 2005-01-19 松下電器産業株式会社 超音波送受波器、超音波送受波器の製造方法及び超音波流量計
US6902623B2 (en) 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
WO2003029516A1 (en) 2001-09-29 2003-04-10 Cree, Inc. Apparatus for inverted cvd
US6590344B2 (en) * 2001-11-20 2003-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Selectively controllable gas feed zones for a plasma reactor
JP2005514762A (ja) * 2001-12-20 2005-05-19 東京エレクトロン株式会社 加工物をプラズマ処理するための磁気フィルタを備える方法および装置
US20030173870A1 (en) 2002-03-12 2003-09-18 Shuh-Yueh Simon Hsu Piezoelectric ultrasound transducer assembly having internal electrodes for bandwidth enhancement and mode suppression
US7734439B2 (en) 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
US6786035B2 (en) 2002-07-22 2004-09-07 The Boeing Company Ion thruster grid clear
US6812648B2 (en) 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system
US7557362B2 (en) 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US8366830B2 (en) 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
WO2004088729A1 (en) 2003-03-26 2004-10-14 Tokyo Electron Limited Chemical processing system and method
KR100513920B1 (ko) * 2003-10-31 2005-09-08 주식회사 시스넥스 화학기상증착 반응기
US6895825B1 (en) 2004-01-29 2005-05-24 The Boeing Company Ultrasonic transducer assembly for monitoring a fluid flowing through a duct
US7570368B2 (en) 2004-05-12 2009-08-04 Veeco Instruments Inc. Method and apparatus for measuring the curvature of reflective surfaces
AU2005245634B2 (en) 2004-05-20 2010-07-01 Akzo Nobel Chemicals International B.V. Bubbler for constant vapor delivery of a solid chemical
US7666323B2 (en) 2004-06-09 2010-02-23 Veeco Instruments Inc. System and method for increasing the emissivity of a material
KR101309334B1 (ko) 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
JP4542860B2 (ja) 2004-10-04 2010-09-15 大陽日酸株式会社 気相成長装置
JP2008515654A (ja) 2004-10-12 2008-05-15 ナノシス・インク． 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス
DE102004053659B3 (de) 2004-11-03 2006-04-13 My Optical Systems Gmbh Verfahren und Vorrichtung zur berührungslosen Erfassung von thermischen Eigenschaften einer Objektoberfläche
JP4652822B2 (ja) 2005-01-07 2011-03-16 学校法人同志社 熱音響装置
US20060196417A1 (en) * 2005-03-03 2006-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Gas distribution systems for deposition processes
JP2009500858A (ja) 2005-07-08 2009-01-08 ネクスジェン・セミ・ホールディング・インコーポレーテッド 制御された粒子ビームを生成するための装置及び方法
CN100358097C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺处理系统及其处理方法
MX343851B (es) 2006-02-09 2016-11-24 Deka Products Ltd Partnership * Sistemas y métodos de suministro de fluido de bombeo que usan un montaje de aplicación de fuerza.
US8603248B2 (en) 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
US20080078746A1 (en) * 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
KR101483522B1 (ko) 2007-01-12 2015-01-16 비코 인스트루먼츠 인코포레이티드 가스 처리 시스템
US7718554B2 (en) 2007-02-09 2010-05-18 Wafermasters, Inc. Focused laser beam processing
DE102007009145A1 (de) 2007-02-24 2008-08-28 Aixtron Ag Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE
JP5063143B2 (ja) 2007-03-02 2012-10-31 株式会社リケン アーク式蒸発源
KR101641991B1 (ko) 2007-04-17 2016-07-29 술저 메타플라스 게엠베하 진공 아크 기화 소스 및 진공 아크 기화 소스를 가진 진공 아크 기화 챔버
KR100924287B1 (ko) 2007-05-10 2009-10-30 한국과학기술연구원 양광주가 존재하지 않는 직류 전원 플라스마 증착 장치와,양광주를 배제한 상태에서의 물질 증착 방법 및 이에 의해제조된 다이아몬드 박막
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US8092599B2 (en) 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
JP5039076B2 (ja) 2008-03-24 2012-10-03 株式会社東芝 エピタキシャルウェーハの製造装置及び製造方法
US9121096B2 (en) * 2008-10-10 2015-09-01 Alta Devices, Inc. Concentric showerhead for vapor deposition
US8895107B2 (en) 2008-11-06 2014-11-25 Veeco Instruments Inc. Chemical vapor deposition with elevated temperature gas injection
EP3483919A1 (en) 2008-12-04 2019-05-15 Veeco Instruments Inc. Chemical vapor deposition flow inlet elements and methods
CN102308358B (zh) 2008-12-08 2015-01-07 通用等离子公司 具有自清洁阳极的闭合漂移磁场离子源装置及基材改性修改方法
EP2252077B1 (en) 2009-05-11 2012-07-11 STMicroelectronics Srl Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
JP5436043B2 (ja) 2009-05-22 2014-03-05 大陽日酸株式会社 気相成長装置
JP5324347B2 (ja) 2009-07-15 2013-10-23 大陽日酸イー・エム・シー株式会社 気相成長装置
KR101245769B1 (ko) 2009-07-28 2013-03-20 엘아이지에이디피 주식회사 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법
JP2011132078A (ja) 2009-12-25 2011-07-07 One Shot Sound:Kk カーボンナノ粒子の製造装置
US8535445B2 (en) 2010-08-13 2013-09-17 Veeco Instruments Inc. Enhanced wafer carrier
TW201237994A (en) 2010-12-20 2012-09-16 Novellus Systems Inc System and apparatus for flowable deposition in semiconductor fabrication
US8888360B2 (en) 2010-12-30 2014-11-18 Veeco Instruments Inc. Methods and systems for in-situ pyrometer calibration
WO2012092064A1 (en) 2010-12-30 2012-07-05 Veeco Instruments Inc. Wafer processing with carrier extension
US20130167771A1 (en) 2011-03-09 2013-07-04 Taiyo Nippon Sanso Corporation Vapor phase growth apparatus
JP5791329B2 (ja) 2011-03-31 2015-10-07 大陽日酸株式会社 気相成長装置
DE102011056589A1 (de) 2011-07-12 2013-01-17 Aixtron Se Gaseinlassorgan eines CVD-Reaktors
DE102011055061A1 (de) 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
WO2013106171A1 (en) 2012-01-09 2013-07-18 Applied Materials, Inc. Method for seasoning uv chamber optical components to avoid degradation
WO2013136358A1 (en) 2012-03-12 2013-09-19 Empire Technology Development Llc Holographic image reproduction mechanism using ultraviolet light
US9816184B2 (en) 2012-03-20 2017-11-14 Veeco Instruments Inc. Keyed wafer carrier
CN103388132B (zh) 2012-05-11 2015-11-25 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
EP2850221B1 (en) 2012-05-18 2022-07-06 Veeco Instruments Inc. Rotating disk reactor with ferrofluid seal for chemical vapor deposition
US9448119B2 (en) 2012-06-22 2016-09-20 Veeco Instruments Inc. Radiation thermometer using off-focus telecentric optics
US9447499B2 (en) * 2012-06-22 2016-09-20 Novellus Systems, Inc. Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
US9085824B2 (en) 2012-06-22 2015-07-21 Veeco Instruments, Inc. Control of stray radiation in a CVD chamber
US9804126B2 (en) 2012-09-04 2017-10-31 Veeco Instruments Inc. Apparatus and method for improved acoustical transformation
US9038364B2 (en) 2012-10-18 2015-05-26 The Boeing Company Thruster grid clear circuits and methods to clear thruster grids
WO2014117255A1 (en) 2013-02-01 2014-08-07 Masdar Institute Of Science And Technology Novel in-situ membrane cleaning using periodic electrolysis
DE102013101534A1 (de) * 2013-02-15 2014-08-21 Aixtron Se Gasverteiler für einen CVD-Reaktor
US9411237B2 (en) 2013-03-14 2016-08-09 Applied Materials, Inc. Resist hardening and development processes for semiconductor device manufacturing
US20140284404A1 (en) 2013-03-20 2014-09-25 Asm Technology Singapore Pte Ltd. Chemical vapour deposition injector
CN103346080A (zh) 2013-07-09 2013-10-09 上海华力微电子有限公司 减少金属硅化物掩模层缺陷的方法
US20150064361A1 (en) 2013-09-04 2015-03-05 Intermolecular Inc. UV treatment for ALD film densification
US9058980B1 (en) 2013-12-05 2015-06-16 Applied Materials, Inc. UV-assisted photochemical vapor deposition for damaged low K films pore sealing
JP5837962B1 (ja) 2014-07-08 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびガス整流部
WO2016025367A1 (en) 2014-08-11 2016-02-18 Veeco Instruments Inc. Enhanced enclosures for acoustical gas concentration sensing and flow control
DE112014002746B4 (de) 2014-12-20 2023-11-30 Intel Corporation Lötkontakte für buchsenbaugruppen und verfahren zur herstellung derselben
US9748113B2 (en) 2015-07-30 2017-08-29 Veeco Intruments Inc. Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
DE102017203255B4 (de) 2016-03-02 2024-06-13 Veeco Instruments Inc. Reaktor zur Verwendung bei einem System einer chemischen Dampfabscheidung und Verfahren zum Betreiben eines Systems einer chemischen Dampfabscheidung
US10571430B2 (en) 2016-03-14 2020-02-25 Veeco Instruments Inc. Gas concentration sensors and systems
CN105704903B (zh) 2016-03-16 2019-03-05 北京交通大学 一种基于磁场作用的真空等离子体生成的放电电极结构
WO2017196622A2 (en) 2016-05-11 2017-11-16 Veeco Instruments Inc. Ion beam materials processing system with grid short clearing system for gridded ion beam source
SG10201705059TA (en) 2016-06-24 2018-01-30 Veeco Instr Inc Enhanced cathodic arc source for arc plasma deposition
US12104242B2 (en) 2019-05-10 2024-10-01 Veeco Instruments Inc. Deposition system with integrated carrier cleaning modules

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6800139B1 (en) * 1999-08-31 2004-10-05 Tokyo Electron Limited Film deposition apparatus and method
CN105441904A (zh) * 2014-06-18 2016-03-30 中微半导体设备(上海)有限公司 气体喷淋装置、化学气相沉积装置和方法
CN106906453A (zh) * 2015-12-14 2017-06-30 朗姆研究公司 喷头组件
CN210030883U (zh) * 2018-04-13 2020-02-07 维高仪器股份有限公司 具有多区域引射器块的化学气相沉积设备

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