CN110350028B - 一种氮掺杂氧化镓薄膜结构及其制备方法 - Google Patents
一种氮掺杂氧化镓薄膜结构及其制备方法 Download PDFInfo
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- CN110350028B CN110350028B CN201910588142.7A CN201910588142A CN110350028B CN 110350028 B CN110350028 B CN 110350028B CN 201910588142 A CN201910588142 A CN 201910588142A CN 110350028 B CN110350028 B CN 110350028B
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- gallium oxide
- thin film
- nitrogen
- oxide thin
- doped gallium
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- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 96
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 239000010409 thin film Substances 0.000 title claims description 54
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 63
- 229910002601 GaN Inorganic materials 0.000 claims description 25
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000001105 regulatory effect Effects 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000089 atomic force micrograph Methods 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- -1 nitrogen-substituted oxygen Chemical class 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
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CN111024745A (zh) * | 2019-11-20 | 2020-04-17 | 深圳第三代半导体研究院 | 一种高掺杂半导体掺杂浓度的测算方法 |
CN111081825A (zh) * | 2019-12-20 | 2020-04-28 | 浙江大学 | 一种msm型日盲紫外探测器的制备方法 |
CN111341839B (zh) * | 2020-01-19 | 2022-01-25 | 深圳第三代半导体研究院 | 一种p型氮掺杂氧化镓薄膜及其制备方法 |
CN111415979A (zh) * | 2020-02-28 | 2020-07-14 | 深圳第三代半导体研究院 | 一种垂直异质p-n结结构器件及其制备方法 |
CN111415977B (zh) * | 2020-02-28 | 2022-02-15 | 深圳第三代半导体研究院 | 一种氮化水平异质p-n结结构器件及其制备方法 |
CN111415978B (zh) * | 2020-02-28 | 2022-02-15 | 深圳第三代半导体研究院 | 一种氧化水平异质p-n结结构器件及其制备方法 |
CN113823707B (zh) * | 2020-06-03 | 2023-12-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于氧化镓与氮化镓的集成式器件及其制备方法 |
CN114597281B (zh) * | 2022-02-26 | 2024-01-30 | 太原理工大学 | 掺β-Ga2O3和P型金刚石的紫外探测器的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103469173A (zh) * | 2013-09-12 | 2013-12-25 | 大连理工大学 | 空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜 |
WO2018199241A1 (ja) * | 2017-04-27 | 2018-11-01 | 国立研究開発法人情報通信研究機構 | Ga2O3系半導体素子 |
CN109346400A (zh) * | 2018-10-17 | 2019-02-15 | 吉林大学 | 一种高质量Ga2O3薄膜及其异质外延制备方法 |
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- 2019-07-02 CN CN201910588142.7A patent/CN110350028B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103469173A (zh) * | 2013-09-12 | 2013-12-25 | 大连理工大学 | 空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜 |
WO2018199241A1 (ja) * | 2017-04-27 | 2018-11-01 | 国立研究開発法人情報通信研究機構 | Ga2O3系半導体素子 |
CN109346400A (zh) * | 2018-10-17 | 2019-02-15 | 吉林大学 | 一种高质量Ga2O3薄膜及其异质外延制备方法 |
Non-Patent Citations (3)
Title |
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Deep acceptors and their diffusion in Ga2O3;Hartwin Peelaers等;《APL Materials》;20190208;第19卷;全文 * |
J.S. Lee等.High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma.《Compound semiconductor week 2019》.2019, * |
Properties and electronic structure of heavily oxygen-doped GaN crystals;Akira Miura等;《Chemical physics letters》;20071208;第451卷;全文 * |
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