CN110326119A - 异质结太阳能电池及其制备方法 - Google Patents
异质结太阳能电池及其制备方法 Download PDFInfo
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- CN110326119A CN110326119A CN201880001491.8A CN201880001491A CN110326119A CN 110326119 A CN110326119 A CN 110326119A CN 201880001491 A CN201880001491 A CN 201880001491A CN 110326119 A CN110326119 A CN 110326119A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 59
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000009413 insulation Methods 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 82
- 239000010408 film Substances 0.000 claims description 62
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 28
- 239000000956 alloy Substances 0.000 claims description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 239000012528 membrane Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 10
- 229910000979 O alloy Inorganic materials 0.000 claims description 6
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 6
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
一种异质结太阳能电池及其制备方法，其中该电池包括晶硅基片、第一本征钝化层、第二本征钝化层、减反射层、第一背场、第二背场、发射极和正负电极；其中，第一本征钝化层设置在晶硅基片的正面，第二本征钝化层设置在晶硅基片的背面，减反射层设置在第一本征钝化层上，发射极和第一背场设置在第二本征钝化层上，第二背场设置在发射极上，发射极与第一背场之间、第二背场与第一背场之间均绝缘设置，电极设置在第一背场和第二背场上。
Description
PCT国内申请，说明书已公开。
Claims (17)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2018100847425 | 2018-01-29 | ||
| CN201810084742.5A CN108461554A (zh) | 2018-01-29 | 2018-01-29 | 全背接触式异质结太阳能电池及其制备方法 |
| PCT/CN2018/101989 WO2019144611A1 (zh) | 2018-01-29 | 2018-08-23 | 异质结太阳能电池及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110326119A true CN110326119A (zh) | 2019-10-11 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810084742.5A Pending CN108461554A (zh) | 2018-01-29 | 2018-01-29 | 全背接触式异质结太阳能电池及其制备方法 |
| CN201880001491.8A Pending CN110326119A (zh) | 2018-01-29 | 2018-08-23 | 异质结太阳能电池及其制备方法 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810084742.5A Pending CN108461554A (zh) | 2018-01-29 | 2018-01-29 | 全背接触式异质结太阳能电池及其制备方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN108461554A (zh) |
| WO (1) | WO2019144611A1 (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785812A (zh) * | 2020-07-15 | 2020-10-16 | 苏州联诺太阳能科技有限公司 | 太阳能电池结构及其制备方法 |
| CN114883451A (zh) * | 2022-05-25 | 2022-08-09 | 中国科学院电工研究所 | 一种全背接触晶硅异质结太阳电池结构的制备方法 |
| CN115207134A (zh) * | 2022-07-01 | 2022-10-18 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片、光伏组件及其制作方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133774A (zh) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种背结背接触太阳能电池及其制作方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150114792A (ko) * | 2014-04-02 | 2015-10-13 | 한국에너지기술연구원 | 초박형 ｈｉｔ 태양전지 및 그 제조방법 |
| CN105118870A (zh) * | 2015-08-31 | 2015-12-02 | 深圳市科纳能薄膜科技有限公司 | 一种制作背接触异质结单晶硅太阳能电池的方法 |
| CN107068798A (zh) * | 2017-03-15 | 2017-08-18 | 深圳市科纳能薄膜科技有限公司 | 背接触异质结太阳能电池及其制作方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5274277B2 (ja) * | 2009-01-27 | 2013-08-28 | 京セラ株式会社 | 太陽電池素子の製造方法 |
| CN103346211B (zh) * | 2013-06-26 | 2015-12-23 | 英利集团有限公司 | 一种背接触太阳能电池及其制作方法 |
| US20150270421A1 (en) * | 2014-03-20 | 2015-09-24 | Varian Semiconductor Equipment Associates, Inc. | Advanced Back Contact Solar Cells |
| CN205959991U (zh) * | 2016-07-26 | 2017-02-15 | 福建钧石能源有限公司 | 一种异质结太阳能电池 |
| CN107342333A (zh) * | 2017-07-19 | 2017-11-10 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种hibc电池及其制备方法 |
| CN207705207U (zh) * | 2018-01-29 | 2018-08-07 | 君泰创新（北京）科技有限公司 | 全背接触式异质结太阳能电池 |
-
2018
- 2018-01-29 CN CN201810084742.5A patent/CN108461554A/zh active Pending
- 2018-08-23 WO PCT/CN2018/101989 patent/WO2019144611A1/zh active Application Filing
- 2018-08-23 CN CN201880001491.8A patent/CN110326119A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150114792A (ko) * | 2014-04-02 | 2015-10-13 | 한국에너지기술연구원 | 초박형 ｈｉｔ 태양전지 및 그 제조방법 |
| CN105118870A (zh) * | 2015-08-31 | 2015-12-02 | 深圳市科纳能薄膜科技有限公司 | 一种制作背接触异质结单晶硅太阳能电池的方法 |
| CN107068798A (zh) * | 2017-03-15 | 2017-08-18 | 深圳市科纳能薄膜科技有限公司 | 背接触异质结太阳能电池及其制作方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785812A (zh) * | 2020-07-15 | 2020-10-16 | 苏州联诺太阳能科技有限公司 | 太阳能电池结构及其制备方法 |
| CN114883451A (zh) * | 2022-05-25 | 2022-08-09 | 中国科学院电工研究所 | 一种全背接触晶硅异质结太阳电池结构的制备方法 |
| CN114883451B (zh) * | 2022-05-25 | 2023-09-29 | 中国科学院电工研究所 | 一种全背接触晶硅异质结太阳电池结构的制备方法 |
| CN115207134A (zh) * | 2022-07-01 | 2022-10-18 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片、光伏组件及其制作方法 |
| CN115207134B (zh) * | 2022-07-01 | 2024-01-26 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片、光伏组件及其制作方法 |
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| Publication number | Publication date |
|---|---|
| WO2019144611A1 (zh) | 2019-08-01 |
| CN108461554A (zh) | 2018-08-28 |
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