CN110299414A - 结晶性氧化物半导体薄膜以及半导体装置 - Google Patents

结晶性氧化物半导体薄膜以及半导体装置 Download PDF

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Publication number
CN110299414A
CN110299414A CN201910634324.3A CN201910634324A CN110299414A CN 110299414 A CN110299414 A CN 110299414A CN 201910634324 A CN201910634324 A CN 201910634324A CN 110299414 A CN110299414 A CN 110299414A
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thin film
film
crystalline
raw material
crystalline oxide
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Chinese (zh)
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人罗俊实
织田真也
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FLOSFIA KK
Flosfia Inc
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FLOSFIA KK
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
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    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN201910634324.3A 2014-03-31 2015-03-30 结晶性氧化物半导体薄膜以及半导体装置 Pending CN110299414A (zh)

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JP2014-072780 2014-03-31
JP2014072780 2014-03-31
CN201510145934.9A CN104952927B (zh) 2014-03-31 2015-03-30 结晶性层叠结构体，半导体装置

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CN201910497081.3A Pending CN110176493A (zh) 2014-03-31 2015-03-30 结晶性层叠结构体，半导体装置
CN201910634597.8A Active CN110310996B (zh) 2014-03-31 2015-03-30 结晶性层叠结构体和半导体装置
CN201510145934.9A Active CN104952927B (zh) 2014-03-31 2015-03-30 结晶性层叠结构体，半导体装置

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CN201910634597.8A Active CN110310996B (zh) 2014-03-31 2015-03-30 结晶性层叠结构体和半导体装置
CN201510145934.9A Active CN104952927B (zh) 2014-03-31 2015-03-30 结晶性层叠结构体，半导体装置

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EP (1) EP2933825B1 (enExample)
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JP7166522B2 (ja) * 2017-08-21 2022-11-08 株式会社Flosfia 結晶膜の製造方法
JP7274701B2 (ja) * 2017-11-15 2023-05-17 株式会社Flosfia ｐ型酸化物半導体膜及びその形成方法
CN116240630A (zh) * 2018-08-01 2023-06-09 出光兴产株式会社 晶体化合物、氧化物烧结体、溅射靶、晶质及无定形氧化物薄膜、薄膜晶体管及电子设备
JP7115688B2 (ja) * 2019-01-25 2022-08-09 株式会社デンソー 成膜装置及び半導体装置の製造方法
JP7045014B2 (ja) * 2019-08-28 2022-03-31 信越化学工業株式会社 積層構造体の製造方法
JP7306640B2 (ja) * 2019-08-28 2023-07-11 信越化学工業株式会社 結晶性酸化物膜
CN114423883B (zh) * 2019-09-30 2024-03-12 日本碍子株式会社 α－Ga2O3系半导体膜
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置
JP7200205B2 (ja) 2020-12-15 2023-01-06 信越化学工業株式会社 成膜方法
TWM633935U (zh) * 2021-04-07 2022-11-11 日商信越化學工業股份有限公司 積層體的製造系統、積層體以及半導體裝置
TW202242209A (zh) 2021-04-28 2022-11-01 日商信越化學工業股份有限公司 積層結構體、半導體裝置以及積層結構體的製造方法

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CN110310996A (zh) 2019-10-08
US20150279944A1 (en) 2015-10-01
TW201713790A (zh) 2017-04-16
TWI571525B (zh) 2017-02-21
CN110310996B (zh) 2020-09-08
CN110176493A (zh) 2019-08-27
TWI665327B (zh) 2019-07-11
US11038026B2 (en) 2021-06-15
JP2015199649A (ja) 2015-11-12
EP2933825B1 (en) 2017-07-05
CN104952927B (zh) 2019-08-13
TW201829824A (zh) 2018-08-16
CN104952927A (zh) 2015-09-30
EP2933825A1 (en) 2015-10-21
US20190013384A1 (en) 2019-01-10
TWI625413B (zh) 2018-06-01
JP2018203614A (ja) 2018-12-27
JP6379369B2 (ja) 2018-08-29
JP6539921B2 (ja) 2019-07-10
US10090388B2 (en) 2018-10-02
TW201536945A (zh) 2015-10-01

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