CN110212054A - 一种高效无机钙钛矿太阳能电池的制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000004528 spin coating Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims 2
- 230000027756 respiratory electron transport chain Effects 0.000 claims 2
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 claims 1
- 239000007772 electrode material Substances 0.000 claims 1
- 150000002220 fluorenes Chemical class 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 2
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- DXZHSXGZOSIEBM-UHFFFAOYSA-M iodolead Chemical compound [Pb]I DXZHSXGZOSIEBM-UHFFFAOYSA-M 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
该发明公开了一种高效无机钙钛矿太阳能电池的制备方法，涉及钙钛矿太阳能电池技术领域。本发明提出使用一步法旋涂铯铅碘钙钛矿溶液后，将旋涂后的钙钛矿薄膜在室温条件下放置一段时间后再退火。一方面，放置后再退火可以让钙钛矿薄膜中残留的溶剂缓慢的挥发，在这个过程中钙钛矿薄膜晶体生长速率减慢，有利于晶体尺寸充分长大，能够有效减少由于晶界引起的缺陷浓度，提高薄膜的晶体质量。另一方面，基于这种方法制备的钙钛矿太阳能电池，有效提高了钙钛矿太阳能电池的光电转换效率，而且迟滞小。
Description
技术领域
本发明涉及钙钛矿太阳能电池技术领域，尤其涉及一种高效无机钙钛矿太阳能电池的制备方法。
背景技术
近年来，钙钛矿太阳能电池由于其具有低成本、可溶液法制备、高的光电转换效率等优点，这类太阳能电池吸引了广大科学工作者极大的兴趣，成为国际前沿科技研究的热点和重点，因为钙钛矿材料具有长的载流子扩散长度，较低的激子结合能以及比较大的光吸收系数，这为其作为理想的光伏材料奠定了基础。自从2009年Miyasaka首次报道以来，钙钛矿太阳能电池效率从3.8％迅速增加到22.7％。传统的钙钛矿太阳能电池主要是基于有机无机杂化材料制备，而有机组分对热比较敏感容易分解，造成器件稳定性很差。纯无机的CsPbI3材料可以经受350摄氏度以上的高温不分解，显示出良好的稳定性，其带隙1.73ev，是硅基叠层电池理想的顶层材料。
目前，纯无机钙钛矿太阳能电池的光电转换效率相较于有机无机杂化钙钛矿太阳能电池还有很大差距，一方面原因是无机钙钛矿的带隙较宽，二是制备的无机钙钛矿薄膜形貌很差，特别是第二点严重制约其效率的提升。因此，改善钙钛矿薄膜的质量显得尤为重要，我们采用旋涂后静置的方法再退火，控制薄膜中残留有机溶剂挥发的速度，减缓结晶速率，提高结晶质量和晶粒尺寸，从而显著的提高了CsPbI3基纯无机钙钛矿太阳能电池的效率，经验证这种方法也同样适用于其他无机钙钛矿比如CsPbBr3、CsPbI2Br等，显示良好的适用性。
发明内容
(一)要解决的技术问题
钙钛矿太阳能电池中钙钛矿层薄膜质量，或钙钛矿层与空穴传输层之间界面接触不好，载流子复合增加，加剧器件性能损失，无法获得高效率无迟滞效应的器件。
(二)技术方案
本发明的主要目的是提出一种高效无机钙钛矿太阳能电池的制备方法，该类型电池可以优化界面、减少载流子复合，得到高效率稳定的器件，优化静置时间可以显著提高钙钛矿太阳能电池的光电转换效率。
(三)有益效果
从上述技术方案可以看出，本发明具有以下有益效果：
1、本发明提出的一种高效无机钙钛矿太阳能电池的制备方法，通过退火前静置的方法，能够有效改善钙钛矿薄膜的结晶质量，完全避免孔洞的形成，改善钙钛矿层与空穴传输层的界面。
2、同时，一种高效无机钙钛矿太阳能电池的制备方法，通过优化旋涂钙钛矿薄膜的厚度，获得了非常高效光电转换效率的电池。
附图说明
图1是本发明提出的具体实施例1促进无机钙钛矿薄膜晶体生长的钙钛矿太阳能电池的结构示意图；
图2是是本发明提出的具体实施例1促进无机钙钛矿薄膜晶体生长的钙钛矿太阳能电池的I-V特征曲线及其参数表；
图3是是本发明提出的具体实施例1促进无机钙钛矿薄膜晶体生长的钙钛矿太阳能电池的制备方法流程示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，一下结合具体实施例，并参照附图，对本发明进一步详细说明。
本发明提供一种高效无机钙钛矿太阳能电池的制备方法，在旋涂完钙钛矿薄膜退火前静置一段时间，减缓薄膜中残留溶剂挥发速度，提高薄膜结晶质量，以提高钙钛矿太阳能电池的光电转换效率。
参阅图1，一种高效无机钙钛矿太阳能电池的制备方法如下：
步骤1；用洗涤剂、丙酮和异丙醇依次清洗ITO/玻璃衬底10各15分钟备用，其中ITO层的方块电阻为7-15欧姆。
步骤2：将清洗干净的ITO/玻璃衬底用氮气吹干，UV处理10分钟，然后在ITO/玻璃衬底上旋涂SnO2纳米颗粒溶液，通过控制旋涂速度调节SnO2电子传输层薄膜20的厚度为20-30nm，随后放置于150℃的热板上退火30分钟，退火后同样UV处理10分钟备用，此过程在空气中进行。
步骤3：使用一步法在氮气手套箱里旋涂0.8M的CsPbI3钙钛矿溶液，溶剂为DMF与DMSO的混合溶液，旋涂速度为1000-5000r/min时间60s，然后静置10-120分钟，然后放置于350℃热板上退火10-60分钟，钙钛矿薄膜30厚度约为300nm。
步骤4：采用旋涂溶液的方法，在钙钛矿薄膜上旋涂空穴传输层40Spiro-OMeTAD溶液，Spiro-OMeTAD溶于氯苯里，浓度为72.3mg/mL，旋涂速度为2000r/min时间30s，其厚度约为150nm，然后放置于氧气手套箱里氧化两个小时左右。
步骤5：将氧化后的器件取出，采用热蒸发沉积的方法，在空穴传输层上蒸发金属金电极50，厚度约为60nm。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (6)
1.一种高效无机钙钛矿太阳能电池的制备方法，其结构包括：自下而上依次是ITO/玻璃衬底、二氧化锡电子传输层，钙钛矿光吸收层、空穴传输层和金属电极。
2.根据权利要求1所述的无机钙钛矿太阳能电池，其特征在于，所述的ITO/玻璃衬底为透明导电玻璃。
3.根据权利要求1所述的无机钙钛矿太阳能电池，其特征在于，所述的电子传输层为二氧化锡，通过旋涂-退火工艺制备，所述的退火过程在低温状态下进行，厚度在10-60nm。
4.根据权利要求1所述的无机钙钛矿太阳能电池，其特征在于，所述的钙钛矿光吸收层材料是CsPbI3，通过溶液法旋涂工艺制备，所述的旋涂后的钙钛矿薄膜退火前室温放置10-120分钟，厚度在200-600nm。
5.根据权利要求1所述的无机钙钛矿太阳能电池，其特征在于，所述的空穴传输材料是Spiro-OMeTAD(2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴)或者P3HT(聚(3-己基噻吩-2，5-二基))通过旋涂法工艺制备，厚度在50-200nm。
6.根据权利要求1所述的无机钙钛矿太阳能电池，其特征在于，所述的金属电极材料是金或者银等金属，通过热蒸发的工艺制备，厚度在40-150nm。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767813A (zh) * | 2019-11-01 | 2020-02-07 | 西南石油大学 | 一种高效CsPbI2Br无机钙钛矿太阳能电池的制备方法 |
| CN111969113A (zh) * | 2020-08-27 | 2020-11-20 | 西南石油大学 | 一种钙钛矿薄膜形貌的调控方法及其应用 |
| CN113192821A (zh) * | 2021-04-20 | 2021-07-30 | 电子科技大学 | 一种全无机CsPbI3钙钛矿薄膜的制备方法及其应用 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767813A (zh) * | 2019-11-01 | 2020-02-07 | 西南石油大学 | 一种高效CsPbI2Br无机钙钛矿太阳能电池的制备方法 |
| CN111969113A (zh) * | 2020-08-27 | 2020-11-20 | 西南石油大学 | 一种钙钛矿薄膜形貌的调控方法及其应用 |
| CN113192821A (zh) * | 2021-04-20 | 2021-07-30 | 电子科技大学 | 一种全无机CsPbI3钙钛矿薄膜的制备方法及其应用 |
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