CN110114893B - 半导体器件 - Google Patents

半导体器件 Download PDF

Info

Publication number
CN110114893B
CN110114893B CN201780079603.7A CN201780079603A CN110114893B CN 110114893 B CN110114893 B CN 110114893B CN 201780079603 A CN201780079603 A CN 201780079603A CN 110114893 B CN110114893 B CN 110114893B
Authority
CN
China
Prior art keywords
electrode
semiconductor layer
light emitting
emitting structure
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780079603.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN110114893A (zh
Inventor
徐在元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Lekin Semiconductor Co Ltd
Original Assignee
Suzhou Liyu Semiconductor Co ltd
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Liyu Semiconductor Co ltd, LG Innotek Co Ltd filed Critical Suzhou Liyu Semiconductor Co ltd
Priority to CN202310063841.6A priority Critical patent/CN116259643B/zh
Publication of CN110114893A publication Critical patent/CN110114893A/zh
Application granted granted Critical
Publication of CN110114893B publication Critical patent/CN110114893B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

Landscapes

  • Led Devices (AREA)
CN201780079603.7A 2016-12-23 2017-12-21 半导体器件 Active CN110114893B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310063841.6A CN116259643B (zh) 2016-12-23 2017-12-21 半导体器件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020160177357A KR20180073866A (ko) 2016-12-23 2016-12-23 반도체 소자
KR10-2016-0177357 2016-12-23
PCT/KR2017/015267 WO2018117699A1 (ko) 2016-12-23 2017-12-21 반도체 소자

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202310063841.6A Division CN116259643B (zh) 2016-12-23 2017-12-21 半导体器件

Publications (2)

Publication Number Publication Date
CN110114893A CN110114893A (zh) 2019-08-09
CN110114893B true CN110114893B (zh) 2023-02-03

Family

ID=62626866

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201780079603.7A Active CN110114893B (zh) 2016-12-23 2017-12-21 半导体器件
CN202310063841.6A Active CN116259643B (zh) 2016-12-23 2017-12-21 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202310063841.6A Active CN116259643B (zh) 2016-12-23 2017-12-21 半导体器件

Country Status (6)

Country Link
US (1) US11121286B2 (https=)
EP (1) EP3561886A4 (https=)
JP (1) JP7002550B2 (https=)
KR (1) KR20180073866A (https=)
CN (2) CN110114893B (https=)
WO (1) WO2018117699A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102450150B1 (ko) 2018-03-02 2022-10-04 삼성전자주식회사 반도체 발광소자
TWI807850B (zh) * 2018-07-12 2023-07-01 晶元光電股份有限公司 發光元件
TWI832768B (zh) * 2018-07-12 2024-02-11 晶元光電股份有限公司 發光元件
TWI770225B (zh) * 2018-07-12 2022-07-11 晶元光電股份有限公司 發光元件
KR102564211B1 (ko) * 2018-08-31 2023-08-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이의 제조 방법
US11387386B2 (en) * 2019-01-07 2022-07-12 Nikkiso Co., Ltd. Semiconductor light emitting element and method of manufacturing semiconductor light emitting element
JP7312056B2 (ja) * 2019-01-07 2023-07-20 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
CN116053381B (zh) * 2021-08-24 2025-10-28 厦门三安光电有限公司 倒装发光二极管及其制备方法
CN113903840B (zh) * 2021-09-14 2022-12-16 厦门三安光电有限公司 发光二极管及发光模块
JP7575011B2 (ja) * 2022-08-25 2024-10-29 シャープ株式会社 Ｌｅｄアレイ

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1700344B1 (en) * 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
US7462868B2 (en) * 2006-02-26 2008-12-09 Formosa Epitaxy Incorporation Light emitting diode chip with double close-loop electrode design
KR101017395B1 (ko) 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
WO2012026695A2 (en) 2010-08-27 2012-03-01 Seoul Opto Device Co., Ltd. Light emitting diode with improved luminous efficiency
KR101171330B1 (ko) 2010-08-27 2012-08-10 서울옵토디바이스주식회사 개선된 발광 효율을 갖는 발광 다이오드
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR20130021300A (ko) * 2011-08-22 2013-03-05 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 및 라이트 유닛
KR101888604B1 (ko) * 2011-10-28 2018-08-14 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US10388690B2 (en) * 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US8946762B2 (en) * 2012-08-20 2015-02-03 Electronics And Telecommunications Research Institute Light emitting diode and light emitting diode package
CN107768399B (zh) * 2012-12-21 2022-02-18 首尔伟傲世有限公司 发光二极管
KR101457205B1 (ko) 2013-02-06 2014-10-31 서울바이오시스 주식회사 서로 이격된 반도체층들을 갖는 발광 소자 및 그것을 제조하는 방법
JP6023660B2 (ja) * 2013-05-30 2016-11-09 スタンレー電気株式会社 半導体発光素子及び半導体発光装置
DE102014011893B4 (de) * 2013-08-16 2020-10-01 Seoul Viosys Co., Ltd. Leuchtdiode
TW201511362A (zh) * 2013-09-09 2015-03-16 Lextar Electronics Corp 發光二極體晶片
CN108400214A (zh) * 2013-10-11 2018-08-14 世迈克琉明有限公司 半导体发光元件
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
KR20160017905A (ko) 2014-08-07 2016-02-17 엘지이노텍 주식회사 발광소자 및 조명시스템
CN104300069B (zh) * 2014-08-25 2017-06-16 大连德豪光电科技有限公司 高压led芯片及其制备方法
US10326050B2 (en) * 2015-02-16 2019-06-18 Seoul Viosys Co., Ltd. Light-emitting device with improved light extraction efficiency
KR102434778B1 (ko) 2015-03-26 2022-08-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지

Also Published As

Publication number Publication date
US20200194628A1 (en) 2020-06-18
CN116259643B (zh) 2026-04-21
EP3561886A4 (en) 2020-09-02
CN110114893A (zh) 2019-08-09
WO2018117699A1 (ko) 2018-06-28
JP7002550B2 (ja) 2022-01-20
US11121286B2 (en) 2021-09-14
KR20180073866A (ko) 2018-07-03
EP3561886A1 (en) 2019-10-30
CN116259643A (zh) 2023-06-13
JP2020503678A (ja) 2020-01-30

Similar Documents

Publication Publication Date Title
CN110114893B (zh) 半导体器件
US9680065B2 (en) Light emitting device and light emitting device package including the same
CN103035803B (zh) 发光器件、发光器件封装件以及包括其的照明装置
KR102080775B1 (ko) 발광소자
TWI790249B (zh) 發光裝置及發光裝置封裝
US9406838B2 (en) Light-emitting device
US20210399176A1 (en) Light emitting semiconductor device
CN109757120B (zh) 发光器件封装
KR101974153B1 (ko) 발광 소자 및 이를 포함하는 조명 시스템
KR20190136826A (ko) 반도체 소자, 반도체 소자 제조방법 및 반도체 소자 패키지
KR102271173B1 (ko) 반도체 소자
US12107188B2 (en) Semiconductor device
KR102007401B1 (ko) 발광소자
KR20130041642A (ko) 발광소자 및 그 제조방법
KR102610607B1 (ko) 발광소자 패키지
KR20150010147A (ko) 발광소자 및 조명시스템
KR20130053974A (ko) 발광 소자
KR102484799B1 (ko) 발광 소자
KR102237158B1 (ko) 반도체 소자 및 반도체 소자 패키지
KR102369260B1 (ko) 반도체 소자
KR102331570B1 (ko) 반도체 소자 및 반도체 소자 패키지
KR20210067595A (ko) 반도체 소자
KR20130094930A (ko) 발광소자
KR20130102213A (ko) 발광소자
KR20200048778A (ko) 발광소자

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20210716

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Applicant after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Applicant before: LG INNOTEK Co.,Ltd.

CB02 Change of applicant information
CB02 Change of applicant information

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Applicant after: Suzhou Liyu Semiconductor Co.,Ltd.

Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Applicant before: Suzhou Leyu Semiconductor Co.,Ltd.

GR01 Patent grant
GR01 Patent grant