CN110100043B - 基板处理装置及支撑销 - Google Patents

基板处理装置及支撑销 Download PDF

Info

Publication number
CN110100043B
CN110100043B CN201880005312.8A CN201880005312A CN110100043B CN 110100043 B CN110100043 B CN 110100043B CN 201880005312 A CN201880005312 A CN 201880005312A CN 110100043 B CN110100043 B CN 110100043B
Authority
CN
China
Prior art keywords
substrate
support
mask
glass substrate
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880005312.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN110100043A (zh
Inventor
佐藤雄亮
清水豪
吉田大介
汤山明
高桥诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of CN110100043A publication Critical patent/CN110100043A/zh
Application granted granted Critical
Publication of CN110100043B publication Critical patent/CN110100043B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201880005312.8A 2017-10-24 2018-10-23 基板处理装置及支撑销 Active CN110100043B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-205427 2017-10-24
JP2017205427 2017-10-24
PCT/JP2018/039265 WO2019082868A1 (ja) 2017-10-24 2018-10-23 基板処理装置、支持ピン

Publications (2)

Publication Number Publication Date
CN110100043A CN110100043A (zh) 2019-08-06
CN110100043B true CN110100043B (zh) 2021-09-03

Family

ID=66246574

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880005312.8A Active CN110100043B (zh) 2017-10-24 2018-10-23 基板处理装置及支撑销

Country Status (5)

Country Link
JP (1) JP6799147B2 (ja)
KR (1) KR102243370B1 (ja)
CN (1) CN110100043B (ja)
TW (1) TWI705152B (ja)
WO (1) WO2019082868A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023286369A1 (ja) 2021-07-16 2023-01-19 株式会社アルバック 真空処理装置
WO2023160836A1 (en) * 2022-02-25 2023-08-31 Applied Materials, Inc. Substrate support assembly, substrate processing apparatus method for fixing an edge support frame to a table frame, and method of manufacturing a portion of a display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1622707A (zh) * 2003-11-27 2005-06-01 精工爱普生株式会社 有机电致发光面板及其制造方法、以及其制造装置
CN101667630A (zh) * 2008-09-04 2010-03-10 株式会社日立高新技术 有机el设备制造装置和其制造方法以及成膜装置和成膜方法
JP2013204097A (ja) * 2012-03-28 2013-10-07 Hitachi High-Technologies Corp 成膜装置および成膜方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29707686U1 (de) 1997-04-28 1997-06-26 Balzers Prozess Systeme Vertriebs- und Service GmbH, 81245 München Magnethalterung für Folienmasken
JP2005281746A (ja) 2004-03-29 2005-10-13 Seiko Epson Corp 蒸着装置、蒸着方法、電気光学装置、および電子機器
JP5238393B2 (ja) * 2008-07-31 2013-07-17 キヤノン株式会社 成膜装置及びそれを用いた成膜方法
JP5074429B2 (ja) 2009-01-16 2012-11-14 株式会社日立ハイテクノロジーズ 成膜装置
JP2012092395A (ja) * 2010-10-27 2012-05-17 Canon Inc 成膜方法及び成膜装置
JP2013093279A (ja) * 2011-10-27 2013-05-16 Hitachi High-Technologies Corp 有機ｅｌデバイス製造装置
KR101337491B1 (ko) * 2012-03-07 2013-12-05 주식회사 선익시스템 기판 정렬장치 및 정렬방법
JP6310705B2 (ja) * 2014-01-22 2018-04-11 株式会社アルバック 基板保持装置および成膜装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1622707A (zh) * 2003-11-27 2005-06-01 精工爱普生株式会社 有机电致发光面板及其制造方法、以及其制造装置
CN101667630A (zh) * 2008-09-04 2010-03-10 株式会社日立高新技术 有机el设备制造装置和其制造方法以及成膜装置和成膜方法
JP2013204097A (ja) * 2012-03-28 2013-10-07 Hitachi High-Technologies Corp 成膜装置および成膜方法

Also Published As

Publication number Publication date
JP6799147B2 (ja) 2020-12-09
KR20190077591A (ko) 2019-07-03
CN110100043A (zh) 2019-08-06
TW201923127A (zh) 2019-06-16
WO2019082868A1 (ja) 2019-05-02
TWI705152B (zh) 2020-09-21
KR102243370B1 (ko) 2021-04-22
JPWO2019082868A1 (ja) 2019-11-14

Similar Documents

Publication Publication Date Title
TWI409907B (zh) Substrate placement mechanism and substrate transfer method
JP6369054B2 (ja) 基板載置装置及び基板処理装置
KR101088289B1 (ko) 탑재대, 처리 장치 및 처리 시스템
US20210050240A1 (en) Transfer method and transfer apparatus for substrate processing system
TW202027162A (zh) 電漿處理裝置
KR100639071B1 (ko) 박막 작성 시스템
JPH0249424A (ja) エッチング方法
CN110100043B (zh) 基板处理装置及支撑销
KR101760982B1 (ko) 기판 처리 방법 및 기판 처리 장치
KR20190019965A (ko) 플라즈마 처리장치
JP2019176031A (ja) プラズマ処理装置、及び被処理体の搬送方法
KR20100126545A (ko) 프로세싱 챔버
KR101063127B1 (ko) 기판 처리 장치
CN109563616B (zh) 成膜装置
US11183411B2 (en) Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
JP6247995B2 (ja) 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
CN115398029B (zh) 溅射装置
KR102579389B1 (ko) 기판 보유지지 유닛, 기판 보유지지 부재, 기판 보유지지 장치, 기판 처리 장치, 기판 처리 방법 및 전자 디바이스의 제조 방법
JP2673538B2 (ja) エッチング装置及びエッチング方法
JP2534098B2 (ja) エッチング装置及び処理装置
WO2003030235A1 (fr) Processeur a plasma et procede de traitement au plasma
JP2004266028A (ja) ガス処理装置およびガス処理方法、ならびにガス処理システム
JPH04196459A (ja) 熱処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant