CN110049946A - 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法 - Google Patents

氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法 Download PDF

Info

Publication number
CN110049946A
CN110049946A CN201780076711.9A CN201780076711A CN110049946A CN 110049946 A CN110049946 A CN 110049946A CN 201780076711 A CN201780076711 A CN 201780076711A CN 110049946 A CN110049946 A CN 110049946A
Authority
CN
China
Prior art keywords
silicon nitride
alpha
nitride powders
ingot casting
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780076711.9A
Other languages
English (en)
Chinese (zh)
Inventor
王丸卓司
柴田耕司
山尾猛
山田哲夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Publication of CN110049946A publication Critical patent/CN110049946A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Mold Materials And Core Materials (AREA)
CN201780076711.9A 2016-12-12 2017-12-12 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法 Pending CN110049946A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-240752 2016-12-12
JP2016240752 2016-12-12
PCT/JP2017/044619 WO2018110567A1 (ja) 2016-12-12 2017-12-12 窒化ケイ素粉末、多結晶シリコンインゴット用離型剤及び多結晶シリコンインゴットの製造方法

Publications (1)

Publication Number Publication Date
CN110049946A true CN110049946A (zh) 2019-07-23

Family

ID=62559522

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780076711.9A Pending CN110049946A (zh) 2016-12-12 2017-12-12 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法

Country Status (4)

Country Link
JP (1) JP6690735B2 (ja)
CN (1) CN110049946A (ja)
TW (1) TWI657042B (ja)
WO (1) WO2018110567A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115702130A (zh) * 2020-06-30 2023-02-14 株式会社德山 氮化硅烧结基板

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109761206A (zh) * 2019-03-18 2019-05-17 青岛瓷兴新材料有限公司 一种高纯低铝类球形β氮化硅粉体、其制造方法及应用

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011051856A (ja) * 2009-09-03 2011-03-17 Denki Kagaku Kogyo Kk 高純度窒化ケイ素微粉末の製造方法
JP2012001385A (ja) * 2010-06-16 2012-01-05 Denki Kagaku Kogyo Kk 離型剤用窒化珪素粉末。
JP2013071864A (ja) * 2011-09-28 2013-04-22 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末およびその製造方法
CN103282307A (zh) * 2010-12-28 2013-09-04 宇部兴产株式会社 多晶硅铸锭铸造用铸模及其脱模材料用氮化硅粉末、含有该脱模层用氮化硅粉末的浆料及其铸造用脱模材料
CN103396170A (zh) * 2013-07-08 2013-11-20 特变电工新疆新能源股份有限公司 多晶硅铸锭用坩埚涂层的制备方法以及坩埚
JP2014009111A (ja) * 2012-06-28 2014-01-20 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末
CN105377756A (zh) * 2013-07-11 2016-03-02 宇部兴产株式会社 多晶硅锭铸造用铸模的脱模剂用氮化硅粉末及其制造法、含有该氮化硅粉末的浆料、多晶硅锭铸造用铸模及其制造方法、及使用该铸模的多晶硅锭的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3877645B2 (ja) * 2002-06-03 2007-02-07 電気化学工業株式会社 窒化ケイ素粉末の製造方法
JP6245602B2 (ja) * 2013-10-21 2017-12-13 国立研究開発法人産業技術総合研究所 窒化ケイ素フィラー、樹脂複合物、絶縁基板、半導体封止材、窒化ケイ素フィラーの製造方法
SG11201610089QA (en) * 2014-06-16 2017-01-27 Ube Industries Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011051856A (ja) * 2009-09-03 2011-03-17 Denki Kagaku Kogyo Kk 高純度窒化ケイ素微粉末の製造方法
JP2012001385A (ja) * 2010-06-16 2012-01-05 Denki Kagaku Kogyo Kk 離型剤用窒化珪素粉末。
CN103282307A (zh) * 2010-12-28 2013-09-04 宇部兴产株式会社 多晶硅铸锭铸造用铸模及其脱模材料用氮化硅粉末、含有该脱模层用氮化硅粉末的浆料及其铸造用脱模材料
JP2013071864A (ja) * 2011-09-28 2013-04-22 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末およびその製造方法
JP2014009111A (ja) * 2012-06-28 2014-01-20 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末
CN103396170A (zh) * 2013-07-08 2013-11-20 特变电工新疆新能源股份有限公司 多晶硅铸锭用坩埚涂层的制备方法以及坩埚
CN105377756A (zh) * 2013-07-11 2016-03-02 宇部兴产株式会社 多晶硅锭铸造用铸模的脱模剂用氮化硅粉末及其制造法、含有该氮化硅粉末的浆料、多晶硅锭铸造用铸模及其制造方法、及使用该铸模的多晶硅锭的制造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
袁向东等: ""多晶硅铸锭涂层用高纯Ｓｉ3Ｎ4微粉的研究进展与展望"", 《硅酸盐通报》 *
韩至成等: "《太阳能级硅提纯技术与装备》", 31 October 2011, 冶金工业出版社 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115702130A (zh) * 2020-06-30 2023-02-14 株式会社德山 氮化硅烧结基板

Also Published As

Publication number Publication date
TWI657042B (zh) 2019-04-21
WO2018110567A1 (ja) 2018-06-21
TW201829303A (zh) 2018-08-16
JPWO2018110567A1 (ja) 2019-06-24
JP6690735B2 (ja) 2020-04-28

Similar Documents

Publication Publication Date Title
KR102643831B1 (ko) 질화규소 분말의 제조 방법
WO2018110565A1 (ja) 高純度窒化ケイ素粉末の製造方法
CN106470939B (zh) 氮化硅粉末、氮化硅烧结体和电路基板、以及氮化硅粉末的制造方法
TWI552977B (zh) 用於製造藍寶石單晶之α氧化鋁燒結體
JP6690734B2 (ja) 窒化ケイ素粉末および窒化ケイ素焼結体の製造方法
CN110062745A (zh) 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法
CN110049946A (zh) 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法
JP5440977B2 (ja) 高純度窒化ケイ素微粉末の製造方法
CN103282307B (zh) 多晶硅铸锭铸造用铸模及其脱模材料用氮化硅粉末、含有该脱模层用氮化硅粉末的浆料及其铸造用脱模材料
CN103269975A (zh) 多晶硅铸锭铸造用铸模及其制造方法、以及多晶硅铸锭铸造用铸模的脱模材料用氮化硅粉末及含有该粉末的浆料
SG191391A1 (en) Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same
JPH10203807A (ja) 乱層構造窒化硼素粉末とその製造方法
TWI523827B (zh) 坩堝
US20210292174A1 (en) Composite with Lithium Silicate and Method with a Quenching Step
JP2016003157A (ja) 多結晶シリコンインゴット鋳造用鋳型の離型剤用窒化ケイ素粉末及びその製造方法、多結晶シリコンインゴット鋳造用鋳型の離型剤用窒化ケイ素粉末含有スラリー、ならびに多結晶シリコンインゴット鋳造用鋳型及びその製造方法
WO2021112145A1 (ja) 金属窒化物の製造方法
Kata et al. Silicon nitride rapid decomposition for ceramic nanopowder manufacturing
TW202140372A (zh) 氮化矽粉末、以及氮化矽燒結體之製造方法
TW202140407A (zh) 氮化矽粉末、以及氮化矽燒結體之製造方法
CN101279723A (zh) 一种制备AlN纳米空心球的原位模板方法
JPS59169912A (ja) 窒化珪素粉末の製造方法
JPH04295005A (ja) 窒化ケイ素の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned
AD01 Patent right deemed abandoned

Effective date of abandoning: 20221018