CN110047987B - 以高对准精度将透镜附着到led模块的方法 - Google Patents

以高对准精度将透镜附着到led模块的方法 Download PDF

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Publication number
CN110047987B
CN110047987B CN201910147399.9A CN201910147399A CN110047987B CN 110047987 B CN110047987 B CN 110047987B CN 201910147399 A CN201910147399 A CN 201910147399A CN 110047987 B CN110047987 B CN 110047987B
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light emitting
substrate
emitting element
adhesive
lens
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Chinese (zh)
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CN110047987A (zh
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C.M.梁
L.L.冯
K.H.张
R.C.劳
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
    • F21V17/10—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening
    • F21V17/101—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening permanently, e.g. welding, gluing or riveting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations

Landscapes

  • Led Device Packages (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
CN201910147399.9A 2014-05-21 2015-05-12 以高对准精度将透镜附着到led模块的方法 Active CN110047987B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910147399.9A CN110047987B (zh) 2014-05-21 2015-05-12 以高对准精度将透镜附着到led模块的方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462001091P 2014-05-21 2014-05-21
US62/001091 2014-05-21
CN201580025837.4A CN106463592A (zh) 2014-05-21 2015-05-12 以高对准精度将透镜附着到led模块的方法
PCT/IB2015/053475 WO2015177679A1 (en) 2014-05-21 2015-05-12 Method of attaching a lens to an led module with high alignment accuracy
CN201910147399.9A CN110047987B (zh) 2014-05-21 2015-05-12 以高对准精度将透镜附着到led模块的方法

Related Parent Applications (1)

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CN201580025837.4A Division CN106463592A (zh) 2014-05-21 2015-05-12 以高对准精度将透镜附着到led模块的方法

Publications (2)

Publication Number Publication Date
CN110047987A CN110047987A (zh) 2019-07-23
CN110047987B true CN110047987B (zh) 2023-10-20

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CN201580025837.4A Pending CN106463592A (zh) 2014-05-21 2015-05-12 以高对准精度将透镜附着到led模块的方法

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Country Link
US (1) US10103300B2 (enExample)
EP (1) EP3146263B1 (enExample)
JP (1) JP6781047B2 (enExample)
KR (1) KR102400442B1 (enExample)
CN (2) CN110047987B (enExample)
WO (1) WO2015177679A1 (enExample)

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JP6863202B2 (ja) * 2017-09-27 2021-04-21 日亜化学工業株式会社 発光モジュールの製造方法。
JP7177328B2 (ja) * 2017-09-29 2022-11-24 日亜化学工業株式会社 発光装置
EP3599414B1 (en) 2018-07-23 2024-09-04 Shin-Etsu Chemical Co., Ltd. Synthetic quartz glass cavity member, synthetic quartz glass cavity lid, optical device package, and making methods
CN110873936A (zh) * 2018-08-31 2020-03-10 宁波舜宇光电信息有限公司 多群组镜头、摄像模组及其制造方法
JP7348533B2 (ja) * 2021-03-31 2023-09-21 日亜化学工業株式会社 発光装置

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CN103178195A (zh) * 2011-12-26 2013-06-26 日东电工株式会社 发光二极管装置的制造方法
CN203071129U (zh) * 2012-12-12 2013-07-17 新世纪光电股份有限公司 发光装置
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CN2720646Y (zh) * 2004-07-29 2005-08-24 亿光电子工业股份有限公司 高功率发光二极管封装结构
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
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CN101075655A (zh) * 2007-06-05 2007-11-21 诸建平 白光面光源发光装置
CN101436638A (zh) * 2008-12-16 2009-05-20 王海军 大功率led封装结构
CN101436637A (zh) * 2008-12-16 2009-05-20 王海军 一种高效散热发光的大功率led封装结构
CN101452986A (zh) * 2008-12-31 2009-06-10 广东昭信光电科技有限公司 白光发光二极管器件的封装结构和方法
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CN203071129U (zh) * 2012-12-12 2013-07-17 新世纪光电股份有限公司 发光装置

Also Published As

Publication number Publication date
WO2015177679A1 (en) 2015-11-26
CN110047987A (zh) 2019-07-23
KR102400442B1 (ko) 2022-05-20
JP6781047B2 (ja) 2020-11-04
EP3146263B1 (en) 2019-09-25
US20170047490A1 (en) 2017-02-16
EP3146263A1 (en) 2017-03-29
JP2017516314A (ja) 2017-06-15
KR20170010396A (ko) 2017-01-31
CN106463592A (zh) 2017-02-22
US10103300B2 (en) 2018-10-16

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