CN110007113A - Test jack - Google Patents

Test jack Download PDF

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Publication number
CN110007113A
CN110007113A CN201811376927.XA CN201811376927A CN110007113A CN 110007113 A CN110007113 A CN 110007113A CN 201811376927 A CN201811376927 A CN 201811376927A CN 110007113 A CN110007113 A CN 110007113A
Authority
CN
China
Prior art keywords
test jack
conductive powder
polymeric beads
polymeric
insulator layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201811376927.XA
Other languages
Chinese (zh)
Other versions
CN110007113B (en
Inventor
龙德中
申东辉
柳基永
李昇东
全镇国
朴成圭
朴瑛植
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AUTO ELECTRONICS Co Ltd
SK Hynix Inc
Original Assignee
AUTO ELECTRONICS Co Ltd
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AUTO ELECTRONICS Co Ltd, Hynix Semiconductor Inc filed Critical AUTO ELECTRONICS Co Ltd
Publication of CN110007113A publication Critical patent/CN110007113A/en
Application granted granted Critical
Publication of CN110007113B publication Critical patent/CN110007113B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/0735Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/04Housings; Supporting members; Arrangements of terminals
    • G01R1/0408Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0416Connectors, terminals
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/04Housings; Supporting members; Arrangements of terminals
    • G01R1/0408Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433Sockets for IC's or transistors
    • G01R1/0441Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2886Features relating to contacting the IC under test, e.g. probe heads; chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members
    • H01R13/03Contact members characterised by the material, e.g. plating, or coating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members
    • H01R13/22Contacts for co-operating by abutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/46Bases; Cases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R33/00Coupling devices specially adapted for supporting apparatus and having one part acting as a holder providing support and electrical connection via a counterpart which is structurally associated with the apparatus, e.g. lamp holders; Separate parts thereof
    • H01R33/74Devices having four or more poles, e.g. holders for compact fluorescent lamps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R2201/00Connectors or connections adapted for particular applications
    • H01R2201/20Connectors or connections adapted for particular applications for testing or measuring purposes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Connecting Device With Holders (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The present invention provides a kind of test jack.The test jack can connect between semiconductor devices and tester, to execute electrical testing to the semiconductor devices.The test jack may include insulator layer, polymeric beads and conductive powder.The insulator layer can be arranged between the semiconductor devices and the tester.The polymeric beads can be arranged in the whole surface of the insulator layer.The conductive powder can be arranged in the insulator layer to form multiple groups.

Description

Test jack
Cross reference to related applications
The 10-2017-0184088 South Korea submitted this application claims on December 29th, 2017 to Korean Intellectual Property Office The priority of application, by quoting whole be incorporated herein.
Technical field
Various embodiments can usually be related to a kind of semiconductor devices, be connected to semiconductor package more particularly, to one kind Test jack between piece installing and tester.
Background technique
In general, the reliability in order to ensure semiconductor package part before semiconductor package part is consigned to consumer, it can Semiconductor package part is tested under the pressure condition of normal condition and/or such as high temperature and high pressure to draw semiconductor package part It is divided into normal semiconductor packaging part and abnormal semiconductor package part.
Semiconductor package part can be fixed to test jack.Having test jack with a semiconductor package can be loaded Into tester to execute test process to semiconductor package part.Test jack can be supported by silicone resin.
However, silicone resin may have low heat distortion temperature.In addition, the volume of silicone resin easily changes because of temperature.Cause This, the shape of test jack can easily vary.As a result, the shape of the change of test jack may cause with small spacing The test crash of semiconductor package part.
Summary of the invention
In the example embodiment of the disclosure, a kind of test jack be can connect between semiconductor devices and tester, To execute electrical testing to the semiconductor devices.The test jack may include insulator layer, polymeric beads and conductive powder. The insulator layer can be arranged between the semiconductor devices and the tester.The polymeric beads can be arranged in institute It states in the whole surface of insulator layer.The conductive powder can be arranged in the insulator layer to form multiple groups.
In the example embodiment of the disclosure, a kind of test jack may include silicon polymer synthetic rubber and multiple conductions Powder group.The silicon polymer synthetic rubber may include the silicone rubber resina and polymeric synthetic resin being mixed with each other.It is described Conductive powder group may include conductive powder.It is poly- that the conductive powder group can magnetically be arranged in the silicon with uniform rule It closes in object synthetic rubber.
Detailed description of the invention
By the detailed description below in conjunction with attached drawing, the above and other side of the theme of the disclosure will be more clearly understood Face, feature and advantage, in which:
Fig. 1 is the sectional view for showing a kind of test jack according to example embodiment.
Fig. 2A and Fig. 2 B is the sectional view of the particle arrangement for the test jack for showing the average diameter according to polymeric beads;
Fig. 3 A and Fig. 3 B are the sectional views for showing the restoring force of test jack according to example embodiment;
Fig. 4 A to Fig. 4 C is the sectional view for showing the gap variation of the conductive powder group under high temperature and low temperature;
Fig. 5 is the curve graph for showing the heat-resistant limit temperature of polymer according to example embodiment;
Fig. 6 is the curve graph for showing the resistance based on testing time according to example embodiment;
Fig. 7 is the curve graph for showing the contact force based on testing time according to example embodiment;
Fig. 8 is the curve graph for showing distribution of resistance at high temperature according to example embodiment;And
Fig. 9 is the curve graph for showing distribution of resistance at low temperature according to example embodiment.
Specific embodiment
Various embodiments of the present invention will be described in greater detail with reference to the attached drawings.Attached drawing is various embodiments (and intermediate structure) Schematic diagram.It is therefore contemplated that the configuration of the diagram as caused by such as manufacturing technology and/or tolerance and the variation of shape. Therefore, described embodiment should not be construed as limited to specific configuration and shape shown in this article, but may include not de- The deviation of configuration and vpg connection from conception and range of the invention as defined in the appended claims.
Sectional view and/or plan view herein with reference to idealized embodiments of the invention describe the present invention.However, this hair Bright embodiment is not necessarily to be construed as limitation present inventive concept.Although some embodiments of the present invention will be shown and be described, It will be appreciated by the skilled addressee that in the case where not departing from the principle of the present invention and conception, it can be in these embodiments In make change.
Fig. 1 is the sectional view for showing a kind of test jack according to example embodiment.
With reference to Fig. 1, the test jack 100 of the example embodiment can be arranged in semiconductor devices 102 and tester 104 it Between.Test jack 100 may include body layer 110.
Body layer 110 may include silicon insulating materials.Multiple insulating polymer pearls 120 and conductive powder 130 can be arranged In body layer 110.
Insulating polymer pearl 120 can be distributed in the whole region of body layer 110.
Conductive powder 130 can be distributed in the outer end with the external terminal 102a of semiconductor devices 102 and tester 104 At the corresponding region sub- 104a.
Because body layer 110 can have insulation characterisitic, body layer 110 can prevent the oxidation of conductive powder 130 Electric short circuit between conductive powder 130.In addition, body layer 110 can prevent particle infiltration into test jack 100.Insulation Silicon may include silicone rubber resina.Alternatively, body layer 110 may include the elastic material with expansion characteristics and shrinkage character. For example, body layer 110 may include the heat-resistant polymer with cross-linked structure, such as polybutadiene rubber, polyurethane rubber, day Right rubber, polyisoprene rubber etc..
Body layer 110 can have cone or arcuate top surface to ensure individual contacts.Flexible printed circuit board (FPCB) film can be arranged on the upper surface of body layer 110.Contact guidance film with contact hole can be arranged in body layer To ensure individual contacts on 110 upper surface.FPCB film and contact guidance film can also be arranged in the lower surface of body layer 110 On.Frame can surround body layer 110.Frame may include the stainless steel for shielding electromagnetic wave.
Conductive powder 130 may include the conductive particle that can magnetically arrange.Conductive powder 130 may include Au and/ Or Ni powder.Conductive powder 130 may include Au, Ag, Fe, Ni, Co and combinations thereof.The surface of each conductive powder 130 can be with It is electroplate with the layer with dissimilar metal, to improve the electric conductivity of conductive powder 130.
Conductive powder 130 can be tightly arranged to form a group 130g.Conductive powder group 130g can be relative to body layer 110 surface forms vertical conductive path.Therefore, when that can test semiconductor devices 102, conductive characteristic can be by phase Minimum pressure in the vertical direction on the surface of body layer 110 is indicated.That is, by making electric current flowing using minimum pressure, By the conductive density of enhancing in vertical direction, and by improving electrical characteristics, it can be ensured that testing reliability.
Fig. 2A and Fig. 2 B is the sectional view of the particle arrangement for the test jack for showing the average diameter according to polymeric beads.Figure 2A can show the sectional view of the test jack when the average diameter of polymeric beads can be more than reference value, and Fig. 2 B can be with Show the sectional view of the test jack when the average diameter of polymeric beads is no more than reference value.
The average diameter of conductive powder 130 can be about 20 μm to about 40 μm.Although conductive powder 130 may not have spy Fixed fixed mode, but the conductive powder 130 that average diameter is about 20 μm to about 40 μm can have electrical characteristics outstanding.Example Such as, when the average diameter of conductive powder 130 can be below about 20 μm, although the bond strength between particle can be enhanced, It is that the resistance of conductive powder 130 may increase.When the average diameter of conductive powder 130 can be greater than about 40 μm, although can be with It is readily formed particle, but the conductivity of conductive powder 130 may be reduced due to low conductive density.
Polymeric beads 120 may include polymethyl methacrylate (PMMA) synthetic resin, synthetic rubber etc..Alternatively, poly- Closing object pearl 120 may include other polymers and PMMA.
Conductive powder 130 can not have specific shape.In the exemplary embodiment, polymeric beads 120 may include having The ball of uniform shapes.Alternatively, the shape of polymeric beads 120 can be not limited to spherical shape.For example, in order to conductive powder 130 it Between be uniformly distributed polymeric beads 120, polymeric beads 120 can have the shape of almost spherical.Conductive powder 130 in order to prevent Arrangement is interrupted, and polymeric beads 120 can have the spherical shape that diameter is about 5 μm to about 20 μm.
Under conditions of the average diameter for ensuring the conductive powder 130 of electric conductivity can be about 30 μm, work as polymer When the diameter of pearl 120 can be lower than 5 μm, the combination that polymeric beads 120 as shown in Figure 2 A will not play supplement conductive powder 130 is strong The effect of degree.When the diameter of polymeric beads 120 can be higher than 20 μm, polymeric beads 120 as shown in Figure 2 B can reduce conduction The bond strength of powder 130, to deteriorate the electrical characteristics of conductive powder 130.Particularly, when can be executed to conductive powder 130 When electroplating technology is to improve conductivity, large-sized polymeric beads 120 may damage the plated film of conductive powder 130.
Therefore, when the average diameter of polymeric beads 120 can be about the 20% of the average diameter of conductive powder 130 to about When 50%, polymeric beads 120 can supplement body layer 110 and be used to support the mechanical property of conductive powder 130 with improvement and pass through Conductive powder 130 is set to be bonded to each other to enhance electrical characteristics.
Fig. 3 A and Fig. 3 B are the sectional views for showing the restoring force of test jack according to example embodiment.Fig. 3 A shows master Conductive metal powder 130 and Fig. 3 B in body layer 110 show insulating polymer pearl 120 and conductive gold in body layer 110 Belong to powder 130.
With reference to Fig. 3 A, the conducting sphere or conductive welding disk of semiconductor devices 102 can press to test jack 100.Body layer 110 can due to from the pressure of semiconductor devices 102 flexible deformation.That is, can produce contraction distortion in body layer 110. When conducting sphere can not press to test jack 100, contraction distortion still be may remain in body layer 110.Work as body layer 110 can only include conductive metal powder 130 when, body layer 110 can have high-compressibility and low restoring force.
With reference to Fig. 3 B, when body layer 110 may include conductive metal powder 130 and polymeric beads 120, polymeric beads 120 can supplement the flexible deformation of body layer 110, so that can be with the shape of retainer body layer 110 after the pressure of conducting sphere.
For example, when the weight of body layer 110 (that is, silicone rubber resina) can have about 100 weight %, polymeric beads The amount of polymeric synthetic resin in 120 can be about 20 weight % to about 40 weight %.Body layer 110 and polymeric beads 120 Mixing ratio can be about 1:0.2, preferably from about 1:0.25.
When polymeric synthetic resin can be below about 20 weight % relative to the amount of silicone rubber resina, recovery effects may It is very small.When polymeric synthetic resin can be greater than about 40 weight % relative to the amount of silicone rubber resina, compression effectiveness can be with It is cancelled to lose elastic effect.
In the exemplary embodiment, insulating body layer 110 and insulating polymer pearl 120 can separate.Alternatively, can be used Silicon-Macroscopic single crystal rubber, it includes insulating body layer 110 formed integrally with one another and insulating polymer pearls 120.Silicon-polymerization Object synthetic rubber may include the functional polymer pearl in silicon base and silicon base.
When test jack 100 can be contacted with conducting sphere or conductive welding disk, silicon-Macroscopic single crystal rubber can play benefit Fill the effect of impact strength.Silicone rubber resina can have weak heat resistance and weak cold resistance under high temperature and low temperature.On the contrary, Polymeric synthetic resin can have strong heat resistance and strong cold resistance.Therefore, polymeric synthetic resin can be with silicon rubber Resin is mixed to supplement heat resistance and cold resistance.As a result, testing reliability can be improved.
Particularly, silicone rubber resina can have high thermal expansion coefficient.Therefore, silicone rubber resina may be bad at high temperature Change and deforms.On the contrary, the silicone rubber resina with polymeric synthetic resin can have heat resistance outstanding to inhibit to deform. Although silicone rubber resina can have weak heat resistance, the silicone rubber resina with polymeric synthetic resin can have improvement Thermal stability.
In addition, silicone rubber resina can have high volume change according to temperature.Particularly, silicone rubber resina is about 130 It can be easily deformed at a temperature of DEG C.In addition, there may be cracks in silicone rubber resina.
Fig. 5 is the curve graph for showing the heat-resistant limit temperature of polymer according to example embodiment.
With reference to Fig. 5, about 200 DEG C at a temperature of, weight loss will not be generated in polymeric synthetic resin.At about 200 DEG C Temperature after can generate weight loss.Therefore, the heat resistance of polymeric synthetic resin can be higher than the heat resistance of silicon.Therefore, It may be noted that polymeric synthetic resin can have temperature tolerance outstanding.
Compare the resistance in retest
Fig. 6 is the curve graph for showing the resistance based on testing time according to example embodiment.Comparative example in Fig. 6 is shown Body layer 110 only including conductive powder 130 is gone out, and the example embodiment in Fig. 6 is shown including 130 He of conductive powder The body layer 110 of polymeric beads 120.
The resistance of test jack can increase because of the retest of semiconductor devices 102.Because conductive powder 130 can be with It is vertically magnetically arranged with uniform rule, so the flowing of charge can under the pressure of conducting sphere when testing beginning To be constant.However, the arrangement of conductive powder 130 may be unordered in body layer 110 when can be with retest, To make resistance increase.
On the contrary, according to example embodiment, because polymeric beads 120 can be between conductive powder 130, when conduction When ball may repeatedly press to test jack 100, the unordered of conductive powder 130 can be prevented.
Hitting power (stroke) needed for comparing in testing
Fig. 7 is the curve graph for showing the contact force based on testing time according to example embodiment.Comparative example in Fig. 7 Body layer 110 only including conductive powder 130 is shown, and the example embodiment in Fig. 7 is shown including conductive powder 130 With the body layer 110 of polymeric beads 120.
In order to test semiconductor devices 102, conducting sphere can press to test jack 100.The pressure of conducting sphere may need Want contact force.Maximum hitting power needed for the change in depth of about 0.2mm can be not greater than about 30gf.
With reference to Fig. 7, it may be noted that under identical testing time, the hitting power of example embodiment, which can be less than, to be compared Exemplary hitting power.It may be noted furthermore that the hitting power of example embodiment can be not greater than about 30gf.On the contrary, it may be noted that Hitting power to comparative example can be with not less than about 30gf.
Compare resistance at high temperature
Fig. 8 is the curve graph for showing distribution of resistance at high temperature according to example embodiment.Comparative example in Fig. 8 is shown Body layer 110 only including conductive powder 130 is gone out, and the example embodiment in Fig. 8 is shown including 130 He of conductive powder The body layer 110 of polymeric beads 120.
Resistance can with temperature proportional increase.Particularly, when test jack 100 may include silicone rubber resina, Silicone rubber resina can be expanded according to the raising of temperature.The bond strength of conductive powder 130 can reduce to increase resistance Greatly.
When polymeric beads 120 can be mixed with silicone rubber resina, the expansion of silicone rubber resina can be inhibited.Therefore, it leads The bond strength of electro-powder 130 can be kept, so that resistance will not increase as the temperature rises.In addition, because polymer Pearl 120 can keep the bond strength of conductive powder 130, thus conductive powder 130 can be it is unordered to prevent resistance bad Change.
Compare resistance at low temperature
Fig. 4 A to Fig. 4 C is the sectional view for showing the gap variation of the conductive powder group under high temperature and low temperature.Fig. 4 A is shown The sectional view of test jack at room temperature.In Figure 4 A, P1 can indicate the conductive powder group 130g magnetically arranged it Between gap.Fig. 4 B shows the sectional view of test jack at high temperature.In figure 4b, P2 can indicate magnetically arranging Conductive powder group 130g between gap.Fig. 4 C shows the sectional view of test jack at low temperature.In figure 4 c, P3 can To indicate the gap between the conductive powder group 130g magnetically arranged.
Resistance may be influenced by low temperature and high temperature.Because the body layer 110 including silicone rubber resina can be in low temperature Lower contraction, so low temperature may influence the bond strength of conductive powder 120.
As shown in Figure 4 B, the gap between conductive powder 130 may broaden because of the expansion of body layer 110 at high temperature. Therefore, the gap P2 between the conductive powder group 130g under high temperature can be than the gap between conductive powder group 130g at room temperature P1 is narrower.
As shown in Figure 4 C, the gap between conductive powder 130 may narrow because of the contraction of body layer 110 at low temperature. Therefore, the gap P3 between the conductive powder group 130g under low temperature can be than the gap between conductive powder group 130g at room temperature P1 is wider.
According to temperature change, gap P1, P2 and P3 between conductive powder group 130g will not be less than about 1mm, so that There may be contact faults between test jack 100 and semiconductor devices 102.
On the contrary, polymeric beads 120 can keep conductive powder 130 when body layer 110 may include polymeric beads 120 Bond strength.Therefore, according to temperature change, expansion and contraction in body layer 110 can be suppressed to make the change of resistance Change and reduces.
Fig. 9 is the curve graph for showing distribution of resistance at low temperature according to example embodiment.Comparative example in Fig. 9 is shown Body layer 110 only including conductive powder 130 is gone out, and the example embodiment in Fig. 9 is shown including 130 He of conductive powder The body layer 110 of polymeric beads 120.
With reference to Fig. 9, comparative example can have wide distribution of resistance.On the contrary, example embodiment can have the electricity of concentration Resistance distribution.
According to example embodiment, test jack may include the conductive powder being magnetically arranged in body layer, and gather The diameter of conjunction object pearl is not more than about the 50% of the average diameter of conductive powder.
The restoring force for being accordingly used in the silicon body layer of support conductive powder can be enhanced.The silicon changed because expanding and shrinking The available compensation of the restoring force of body layer.As a result, test jack can have improved characteristic.
The above embodiment of the present invention is intended to illustrate and not limit the present invention.Various substitutions and equivalent are possible. The present invention is by embodiment described herein limited.Present invention is also not necessarily limited to any certain types of semiconductor devices.In view of Present disclosure, other additions, reduction or modification are it will be apparent that and being intended to come within the scope of the appended claims.

Claims (14)

1. a kind of test jack is connected between semiconductor devices and tester to execute electrical testing, the test jack packet It includes:
Insulator layer is arranged between the semiconductor devices and the tester;
Polymeric beads are evenly arranged in the insulator layer;And
Conductive powder is arranged in the insulator layer to form multiple groups.
2. test jack as described in claim 1, wherein described group including the conductive powder is relative to the insulator The surface of layer is arranged vertically, to form conductive path in the insulator layer.
3. test jack as described in claim 1, wherein described group including the conductive powder can be arranged in it is described At the corresponding position of the terminal of the terminal of semiconductor devices and the tester.
4. test jack as described in claim 1, wherein the polymeric beads are arranged between the conductive powder.
5. test jack as claimed in claim 4, wherein each polymeric beads have spherical form, and diameter is the conduction About the 25% to about 50% of the diameter of powder.
6. test jack as claimed in claim 5, wherein the diameter of the conductive powder is about 20 μm to about 40 μm, and The diameter of the polymeric beads is about 5 μm to about 20 μm.
7. test jack as described in claim 1, wherein the insulator layer includes silicone rubber resina.
8. test jack as described in claim 1, wherein the polymeric beads include polymetylmethacrylate synthesis Resin or synthetic rubber.
9. test jack as described in claim 1, wherein the conductive powder includes at least one of Au and Ni.
10. test jack as described in claim 1, wherein the mixing ratio of the insulator layer and the polymeric beads is about 1:0.2 to about 1:0.4.
11. test jack as described in claim 1, wherein the polymeric beads include insulating materials.
12. a kind of test jack, comprising:
Silicon polymer synthetic rubber comprising the silicone rubber resina and polymeric synthetic resin being mixed with each other;And
Conductive powder group comprising conductive powder, the conductive powder are magnetically arranged in the silicon with uniform rule and polymerize In object synthetic rubber.
13. test jack as claimed in claim 12, wherein the polymeric synthetic resin has about 200 DEG C of thermal denaturation Temperature.
14. test jack as claimed in claim 12, wherein the silicone rubber resina is mixed with the polymeric synthetic resin Composition and division in a proportion is about 100 weight %: about 20 weight % to about 40 weight %.
CN201811376927.XA 2017-12-29 2018-11-19 Test socket Active CN110007113B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0184088 2017-12-29
KR1020170184088A KR101967401B1 (en) 2017-12-29 2017-12-29 Test socket

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Publication Number Publication Date
CN110007113A true CN110007113A (en) 2019-07-12
CN110007113B CN110007113B (en) 2021-04-30

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