CN110004423A - CIGS preparation reinforcing isolation film and preparation method - Google Patents
CIGS preparation reinforcing isolation film and preparation method Download PDFInfo
- Publication number
- CN110004423A CN110004423A CN201910399825.8A CN201910399825A CN110004423A CN 110004423 A CN110004423 A CN 110004423A CN 201910399825 A CN201910399825 A CN 201910399825A CN 110004423 A CN110004423 A CN 110004423A
- Authority
- CN
- China
- Prior art keywords
- preparation
- organic substrate
- magnetic control
- flexible organic
- cold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 60
- 238000002955 isolation Methods 0.000 title claims abstract description 45
- 230000003014 reinforcing effect Effects 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000004544 sputter deposition Methods 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 37
- 230000008021 deposition Effects 0.000 claims abstract description 29
- 239000012528 membrane Substances 0.000 claims abstract description 27
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 15
- 229910052786 argon Inorganic materials 0.000 claims abstract description 8
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 239000012495 reaction gas Substances 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 238000000926 separation method Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052681 coesite Inorganic materials 0.000 claims description 23
- 229910052906 cristobalite Inorganic materials 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 229910052682 stishovite Inorganic materials 0.000 claims description 23
- 229910052905 tridymite Inorganic materials 0.000 claims description 23
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052593 corundum Inorganic materials 0.000 claims description 11
- 238000005728 strengthening Methods 0.000 claims description 11
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 11
- 238000005096 rolling process Methods 0.000 claims description 9
- 238000004804 winding Methods 0.000 claims description 8
- 230000008676 import Effects 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- 229920005372 Plexiglas® Polymers 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000001815 facial effect Effects 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000011368 organic material Substances 0.000 abstract description 5
- 238000001228 spectrum Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 3
- 230000003595 spectral effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 44
- 238000007747 plating Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
Abstract
The present invention provides a kind of CIGS preparation with isolation membrane preparation method is strengthened, using flexible organic material as substrate, using organic substrate magnetron sputtering technology disposably made of CIGS preparation with isolation film is strengthened, there is preferable docile performance；It uses the multiple magnetic control sputtering devices intracavitary in a vacuum coating, each magnetic control sputtering device include using inert gas argon gas as working gas, using oxygen as the deposition cathode chamber of reaction gas, be located at deposition the indoor cathode targets of cathode, the flexible organic substrate of continuous moving passes sequentially through the deposition cathode chamber of each magnetic control sputtering device, by the sputtering of each magnetic control sputtering device, so that cathode targets oxide is disposably deposited on the upper and lower surface of flexible organic substrate；The present invention also provides a kind of CIGS to prepare with isolation film is strengthened, and is conducive to the broadening range through spectrum, widens spectral transmission window width, helps to increase total light transmittance, improves transfer efficiency.
Description
Technical field
The present invention relates to CIGS manufacturing field and field of vacuum coating, provide a kind of CIGS preparation reinforcing isolation film preparation
Method, it is primary using flexibility, takeup type, continuous type organic substrate magnetron sputtering technology using flexible organic material as substrate
Property made of CIGS preparation with isolation film is strengthened, there is preferable docile performance, can be widely applied to flexible solar thin-film electro
In the manufacturing in pond.
Background technique
The usually used base material of flexible solar hull cell is thin metal, compares flexible organic film substrate attached
Docile performance when arbitrary surface surface it is poor, be not available even.But flexible organic substrate is used for solar energy film
It is special inside flexible organic film during manufacturing and store due to flexible organic film base material when battery production
It is not the defects of superficial part forms steam bubble there are the moisture in a large amount of micro-bubble, absorption air, in magnetron sputtering height
In vacuum cavity, due to negative pressure of vacuum influence and rupture release.Gas, the steam released generates one to the spot deposition film
Fixed influence, less serious case influences the consistency of deposition film index, serious that the spot deposition film will be made to be destroyed, and causes serious
Defect.
Summary of the invention
The object of the present invention is to provide a kind of CIGS to prepare with isolation membrane preparation method is strengthened, using flexible organic material as base
Material is prepared using CIGS made of flexibility, takeup type, continuous type organic substrate magnetron sputtering membrane disposable with reinforcing isolation
Film has preferable docile performance, can be widely applied in the manufacturing of flexible solar hull cell.
The purpose of the present invention is be achieved through the following technical solutions:
With isolation membrane preparation method is strengthened, it uses the multiple magnetic control sputtering devices intracavitary in a vacuum coating for CIGS preparation,
Each magnetic control sputtering device includes using inert gas argon gas as working gas, using oxygen as the deposition cathode chamber of reaction gas, position
In the deposition indoor cathode targets of cathode, the flexible organic substrate of continuous moving passes sequentially through the deposition yin of each magnetic control sputtering device
Pole room, by the sputtering of each magnetic control sputtering device, so that cathode targets oxide is disposably deposited on the upper of flexible organic substrate
Lower surface.
The beneficial effects of the present invention are:
It is above-mentioned using flexible organic material as substrate, using flexibility, takeup type, continuous type organic substrate magnetron sputtering membrane disposable
Manufactured CIGS preparation has preferable docile performance, can be widely applied to flexible solar hull cell with isolation film is strengthened
The manufacturing in.
With isolation membrane preparation method is strengthened, working gas is argon gas, reaction gas O for above-mentioned CIGS preparation2。
Above-mentioned CIGS preparation is PET or flexible plexiglass with isolation membrane preparation method, flexible organic substrate is strengthened.
With isolation membrane preparation method is strengthened, flexible organic substrate, which passes sequentially through cathode targets, is respectively for above-mentioned CIGS preparation
First to fourth magnetic control sputtering device of Nb, Si, Si, Al；It is successively acted on by the first, second magnetic control sputtering device flexible organic
Substrate lower surface is sequentially depositing Nb2O5Transition zone, SiO2Lower separation layer is then successively acted on by third, the 4th magnetic control sputtering device
SiO is sequentially depositing in flexible organic substrate upper surface2Upper separation layer, Al2O3Hardened layer.
The separation layer of flexible organic substrate surface attachment is fine and close SiO2Layer, intracavitary to magnetic control sputtering vacuum coating is low
Pressure plays the role of buffer action, avoid inside flexible organic substrate micro-bubble, steam existing for superficial by low pressure and
Release guarantees to prepare in CIGS with film quality when strengthening isolation film magnetron sputtering plating.Also, due to transition zone Nb2O5、SiO2
Lower isolated layer film layer combination, is more conducive to the broadening range through spectrum, widens spectral transmission window width, help to increase
Add total light transmittance, improves transfer efficiency.
Above-mentioned CIGS preparation with strengthening isolation membrane preparation method, it include one have unreel chamber, Vacuum Deposition membrane cavity and
The cavity for winding chamber, unreel chamber, winding it is intracavitary be respectively arranged to continuous blowing unreel platform, for the winding of continuous rewinding
Platform, vacuum coating the first, second cold drum of intracavitary setting；First, second magnetic control sputtering device is circumferentially arranged around the first cold drum, the
Three, the 4th magnetic control sputtering device is around the second cold circumferential setting of drum；Importing first is cold after releasing from unreeling on platform for flexible organic substrate
Drum, cooling through the first cold drum, formation single side film is led by the first cold drum after the first, second magnetic control sputtering device deposition cathode chamber
Out；Single side film imports the second cold drum, the shape after the second cold drum cooling, across third, the 4th magnetic control sputtering device deposition cathode chamber
It is wound with reinforcing isolation film by rolling table at CIGS preparation；The upper surface of flexible organic substrate is mobile to be arranged on the first cold drum,
The lower surface of single side film is mobile to be arranged on the second cold drum.
Above-mentioned CIGS preparation is with isolation membrane preparation method is strengthened, and the first, second magnetic control sputtering device is around the first cold drum week
To setting on the left of the first cold drum, third, the 4th magnetic control sputtering device are around the second cold circumferential setting of drum on the right side of the second cold drum；It is soft
Property organic substrate by first it is cold drum top import, by first it is cold drum lower section draw after, then by second it is cold drum top import, by second
It draws cold drum lower section.
The cathode target surface of first, second, third, fourth control sputtering equipment is away from cold bulging 195~205mm of surface distance.
Using double cold two-sided disposable deposition platings of drum, i.e. saving working hour, and avoid producing because of secondary retractable volume deposition plating
Raw defect, helps to improve yield rate.
Present invention simultaneously provides a kind of CIGS to prepare with isolation film is strengthened, it includes flexible organic substrate, is splashed by magnetic control
The technology of penetrating is sequentially deposited at the Nb on flexible organic substrate lower surface2O5Transition zone, SiO2Lower separation layer and it is sequentially deposited at flexibility
SiO on organic substrate upper surface2Upper separation layer, Al2O3Hardened layer.
Above-mentioned CIGS preparation is with isolation film is strengthened, and flexible organic substrate is PET, with a thickness of 120~130；Nb2O5
Transition region thickness is 4~6nm, SiO2Lower separation layer thickness is 8~12nm, SiO2Upper separation layer thickness is 8~12nm, Al2O3Firmly
Change layer with a thickness of 8~12nm.
Detailed description of the invention
Fig. 1 is the CIGS preparation schematic diagram for strengthening isolation film；
Fig. 2 is the CIGS preparation preparation facilities schematic diagram for strengthening isolation film.
Specific embodiment
With reference to the accompanying drawing, the invention will be further described:
It prepares referring to CIGS shown in Fig. 1 with reinforcing isolation film, the CIGS shown in Fig. 2 preparation preparation dress for strengthening isolation film
It sets, which is disposable two-sided magnetic control sputtering deposition device, it uses multiple magnetic in a Vacuum Deposition membrane cavity Q2
Sputtering equipment is controlled, each magnetic control sputtering device includes using inert gas argon gas as working gas, using oxygen as the heavy of reaction gas
Product cathode chamber is located at the deposition indoor cathode targets of cathode, and the flexible organic substrate B1 of continuous moving passes sequentially through each magnetic control and splashes
Deposition cathode chamber S5, S6, S7, S8 of injection device, by the sputtering of each magnetic control sputtering device, so that cathode targets oxide is primary
Property is deposited on the upper and lower surface of flexible organic substrate B1.
The preparation facilities of above-mentioned CIGS preparation reinforcing isolation film, including be divided by left and right partition G1, G2 and unreel chamber
Q1, Vacuum Deposition membrane cavity Q2 and the cavity Q for winding chamber Q3, unreel platform S1 for continuous blowing unreeling to be provided in chamber Q1,
It is provided with rolling table S2 for continuous rewinding in winding chamber Q3, the first cold bulging S3, second cold is set in Vacuum Deposition membrane cavity Q2
The cold bulging S3 of drum S4(first, the second cold bulging S4 are referred to as cold drum)；First, second magnetic control sputtering device is circumferentially set around the first cold bulging S3
It sets, third, the 4th magnetic control sputtering device are circumferentially arranged around the second cold bulging S4；Flexible organic substrate B1 from unreel on platform S1 release after
Import the first cold bulging S3, it is cooling through the first cold bulging S3, pass through the first, second magnetic control sputtering device deposition cathode chamber S5, S6
Single side film B6 is formed afterwards to be exported by the first cold bulging S3；Single side film B6 import the second cold bulging S4, it is cooling through the second cold bulging S4, sequentially wear
CIGS preparation is formed with reinforcing isolation film B7 by rolling table S2 after crossing third, the 4th magnetic control sputtering device deposition cathode chamber S7, S8
Winding；The upper surface of flexible organic substrate B1 is mobile to be arranged on the first cold bulging S3, and the mobile setting in the lower surface of single side film B6 exists
On second cold bulging S4, the upper surface of flexible organic substrate B1 is fitted closely with the first cold bulging S3 circumferential surface, the lower surface of single side film B6
It is fitted closely with the second cold bulging S4 circumferential surface.
In diagram, cavity Q be divided into from left to right unreel chamber Q1, Vacuum Deposition membrane cavity Q2 and winding chamber Q3, first, the
Two magnetic control sputtering devices are circumferentially arranged on the left of the first cold bulging S3 around the first cold bulging S3 being located on the left of Vacuum Deposition membrane cavity Q2, the
Three, circumferentially setting is right in the second cold bulging S4 around the second cold bulging S4 being located on the right side of Vacuum Deposition membrane cavity Q2 for the 4th magnetic control sputtering device
Side；After flexible organic substrate B1 is imported by the first cold bulging top S3 through guide roller D1 guiding, is drawn by the first cold bulging lower section S3, then
By being imported above the second cold bulging S4, through guide roller D2 guiding by being drawn below the second cold bulging S4.
The cathode target surface S9 of first, second, third, fourth control sputtering equipment is away from cold bulging 195~205mm of surface distance.This
In case, taking the distance is 200mm.
Flexible organic substrate is PET or flexible plexiglass.In this case, flexible organic substrate B1 is PET.
First, second, third, fourth, which controls the cathode targets that sputtering equipment deposits in cathode chamber S5, S6, S7, S8, is respectively
Nb, Si, Si, Al, working gas are inert gas, reaction gas O2.In this case, inert gas is argon gas.
Flexible organic substrate B1 passes sequentially through first to fourth magnetic control sputtering device；It deposits and makees in aerobic reaction magnetron sputtering
Under, the lower surface flexible organic substrate B1 is successively acted on by the first, second magnetic control sputtering device and is sequentially depositing Nb2O5B1 transition
Layer, SiO2Lower separation layer then successively acts on flexible organic substrate upper surface by third, the 4th magnetic control sputtering device and successively sinks
Product SiO2Upper separation layer, Al2O3Hardened layer.
It unreels chamber Q1, Vacuum Deposition membrane cavity Q2 and winds what the vacuum state in chamber Q3 was mutually isolated, that is, unreeling or receiving
When volume, working condition can be still kept in Vacuum Deposition membrane cavity Q2, to use the CIGS preparation preparation facilities for strengthening isolation film
The CIGS preparation for carrying out the available unlimited continuous uniform of magnetron sputtering provides space support with isolation film is strengthened.
By the pressure in control Vacuum Deposition membrane cavity Q2, rolling table S2 drag the effect of drawing under flexible organic substrate B1 company
Continuous rate travel, the sputtering power of each magnetic control sputtering device, operating temperature, each magnetic control sputtering device deposit the indoor vacuum of cathode
Spend and be filled with oxygen flow, argon flow, make corresponding cathode targets that aerobic reaction pair occur in each magnetic control sputtering device
It is the prior art that flexible organic substrate B1, which carries out magnetron sputtering deposition plating, this is not repeated.
Present invention simultaneously provides a kind of CIGS to prepare with isolation film is strengthened, it includes flexible organic substrate, is splashed by magnetic control
The technology of penetrating is sequentially deposited at the Nb on flexible organic substrate lower surface2O5Transition zone, SiO2Lower separation layer and it is sequentially deposited at flexibility
SiO on organic substrate upper surface2Upper separation layer, Al2O3Hardened layer.
Above-mentioned CIGS preparation is with isolation film is strengthened, and flexible organic substrate is PET, with a thickness of 120~130；Nb2O5
Transition region thickness is 4~6nm, SiO2Lower separation layer thickness is 8~12nm, SiO2Upper separation layer thickness is 8~12nm, Al2O3Firmly
Change layer with a thickness of 8~12nm.
Preparation process is as follows:
By what is selected with a thickness of 120~130, in flexible organic substrate PET(this example of volume length 1500M, breadth 1340mm
Being put into a thickness of 125) coiled material for flexible organic substrate PET unreels platform S1, is oriented to through guide roller D1 by by the first cold bulging S3
Side's importings, the gap between the cold bulging S3 of the first, second magnetic control sputtering device and first, by extraction below the first cold bulging S3 after,
Again by the second cold bulging top S4 importing, gap between third, the 4th magnetic control sputtering device and the second cold bulging S4, through guide roller
After D2 guiding below the second cold bulging S4 by drawing, rolling table S2 is connected；
Cathode targets Nb, Si, Si, Al target is successively put into corresponding magnetic control sputtering device and deposits cathode chamber；
Rolling table S2, which is dragged, to be drawn flexible organic substrate PET and unreels from unreeling platform S1 continuously and smoothly；
In each magnetic control sputtering device, using inert gas argon gas as working gas, using oxygen as reaction gas, make corresponding yin
Pole target occurs aerobic reaction and carries out magnetron sputtering deposition plating to flexible organic substrate PET, and flexible organic substrate PET is by the
When magnetron sputtering device, the Nb for being 4~6nm in the lower surface deposition thickness of flexible organic substrate PET2O5Transition zone B2, and pass through
When crossing the second magnetic control sputtering device, in Nb2O5Deposition thickness is the SiO of 8~12nm on transition zone B22Lower separation layer B3 forms list
Facial mask B6, and when process third magnetic control sputtering device, it is 8~12nm's in the upper surface deposition thickness of flexible organic substrate PET
SiO2Upper separation layer B4, and when four magnetic control sputtering device of process, in SiO2Deposition thickness is 8~12nm's on upper separation layer B4
Al2O3Hardened layer B5 forms CIGS preparation reinforcing isolation film B7；
CIGS preparation is wound with reinforcing isolation film B7 by rolling table S2.
CIGS preparation Nb on reinforcing isolation film B7 in this example, after film forming2O5Transition zone B2, SiO2Lower separation layer B3,
SiO2Upper separation layer B4, Al2O3The thickness of hardened layer B5 is respectively 5nm, 10nm, 10nm, 10nm.
The beneficial effects of the present invention are:
The invention reside in provide a kind of CIGS preparation preparation method for strengthening isolation film.Using flexible organic material as substrate, adopt
With flexibility, takeup type, continuous type organic substrate magnetron sputtering technology, disposably manufactured CIGS preparation use strengthens isolation film,
With preferable docile performance, can be widely applied in the manufacturing of flexible solar hull cell.
The SiO of flexible organic substrate surface attachment2Lower separation layer is fine and close SiO2Layer, to magnetic control sputtering vacuum coating chamber
Interior low pressure plays buffer action, avoids micro-bubble, steam existing for the superficial of flexible organic substrate inside by low pressure
It acts on and discharges, guarantee to prepare in CIGS with film quality when strengthening isolation film magnetron sputtering plating.
Due to transition zone Nb2O5、SiO2Lower isolated layer film layer combination, is more conducive to the broadening range through spectrum, adds
Wide spectrum transmission window width helps to increase total light transmittance.
Using double cold two-sided disposable deposition platings of drum, i.e. saving working hour, and avoid producing because of secondary retractable volume deposition plating
Raw defect, helps to improve yield rate.
Claims (8)
- With isolation membrane preparation method is strengthened, it is filled using in the intracavitary multiple magnetron sputterings of a vacuum coating for 1.CIGS preparation Set, each magnetic control sputtering device include using inert gas argon gas as working gas, using oxygen as the deposition cathode chamber of reaction gas, Positioned at the deposition indoor cathode targets of cathode, characterized in that the flexible organic substrate of continuous moving passes sequentially through each magnetron sputtering The deposition cathode chamber of device, by the sputtering of each magnetic control sputtering device, so that cathode targets oxide is disposably deposited on flexibility The upper and lower surface of organic substrate.
- 2. CIGS according to claim 1 preparation is with strengthening isolation membrane preparation method, characterized in that flexible organic substrate is PET or flexible plexiglass.
- 3. CIGS according to claim 1 preparation is with strengthening isolation membrane preparation method, characterized in that flexible organic substrate according to Secondary is first to fourth magnetic control sputtering device of Nb, Si, Si, Al respectively by cathode targets；Successively splashed by the first, second magnetic control Injection device acts on flexible organic substrate lower surface and is sequentially depositing Nb2O5Transition zone, SiO2Lower separation layer, then successively by third, 4th magnetic control sputtering device acts on flexible organic substrate upper surface and is sequentially depositing SiO2Upper separation layer, Al2O3Hardened layer.
- 4. CIGS preparation according to claim 1 reinforcing isolation membrane preparation method, characterized in that it, which includes one, has Unreel chamber, Vacuum Deposition membrane cavity and wind chamber cavity, unreel chamber, winding it is intracavitary be respectively arranged to continuous blowing unreel platform, For the rolling table of continuous rewinding, vacuum coating the first, second cold drum of intracavitary setting；First, second magnetic control sputtering device is around The one cold circumferential setting of drum, third, the 4th magnetic control sputtering device are around the second cold circumferential setting of drum；Flexible organic substrate is from unreeling on platform The first cold drum is imported after releasing, forms list through the first cold bulging cooling, after the first, second magnetic control sputtering device deposition cathode chamber Facial mask is exported by the first cold drum；Single side film imports the second cold drum, fills through the second cold drum cooling, across third, the 4th magnetron sputtering Formation CIGS preparation is wound with reinforcing isolation film by rolling table after setting deposition cathode chamber；The upper surface movement of flexible organic substrate is set It sets on the first cold drum, the lower surface of single side film is mobile to be arranged on the second cold drum.
- 5. CIGS preparation according to claim 4 reinforcing isolation membrane preparation method, characterized in that the first, second magnetic control For sputtering equipment around the first cold circumferential setting of drum on the left of the first cold drum, third, the 4th magnetic control sputtering device are circumferential around the second cold drum Setting is on the right side of the second cold drum；After flexible organic substrate is imported by the first cold drum top, is drawn by the first cold drum lower section, then by the Two cold drum tops import, are drawn by the second cold drum lower section.
- 6. CIGS according to claim 4 preparation is with strengthening isolation membrane preparation method, characterized in that first, second, the Three, the cathode target surface of the 4th magnetic control sputtering device is away from cold bulging 195~205mm of surface distance.
- 7.CIGS preparation, it is characterized in that: including flexible organic substrate, is sequentially depositing with isolation film is strengthened by magnetron sputtering technique Nb on flexible organic substrate lower surface2O5Transition zone, SiO2Lower separation layer and it is sequentially deposited at flexible organic substrate upper surface On SiO2Upper separation layer, Al2O3Hardened layer.
- 8. CIGS preparation reinforcing isolation film according to claim 7, characterized in that flexible organic substrate is PET, thick Degree is 120~130 μm；Nb2O5Transition region thickness is 4~6nm, SiO2Lower separation layer thickness is 8~12nm, SiO2Upper separation layer With a thickness of 8~12nm, Al2O3Thin hardened layer is 8~12nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910399825.8A CN110004423A (en) | 2019-05-14 | 2019-05-14 | CIGS preparation reinforcing isolation film and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910399825.8A CN110004423A (en) | 2019-05-14 | 2019-05-14 | CIGS preparation reinforcing isolation film and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110004423A true CN110004423A (en) | 2019-07-12 |
Family
ID=67176957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910399825.8A Pending CN110004423A (en) | 2019-05-14 | 2019-05-14 | CIGS preparation reinforcing isolation film and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110004423A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101348896A (en) * | 2008-08-27 | 2009-01-21 | 浙江大学 | Winding type two-sided coating equipment |
| CN202601233U (en) * | 2012-05-21 | 2012-12-12 | 珠海兴业光电科技有限公司 | Flexible transparent conductive film |
| KR20120136029A (en) * | 2011-06-08 | 2012-12-18 | 주식회사 석원 | An apparatus and method for both sides sputering vacuum deposition |
| CN104674176A (en) * | 2015-02-09 | 2015-06-03 | 常州工学院 | High-efficiency magnetron sputtering winding coating machine capable of continuously coating in double-sided reciprocated way |
| CN105349961A (en) * | 2015-11-30 | 2016-02-24 | 广东腾胜真空技术工程有限公司 | Multi-roller and multi-chamber coiling film coating device |
| CN105658839A (en) * | 2013-07-29 | 2016-06-08 | 赢创德固赛有限公司 | Flexible composite, method for production thereof, and use thereof |
| CN108754446A (en) * | 2018-08-07 | 2018-11-06 | 安徽金美新材料科技有限公司 | A kind of winding type two-sided magnetic control sputtering vacuum coating equipment and film plating process |
| CN210127266U (en) * | 2019-05-14 | 2020-03-06 | 南京汇金锦元光电材料有限公司 | Reinforced isolation film for CIGS preparation and preparation device |
-
2019
- 2019-05-14 CN CN201910399825.8A patent/CN110004423A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101348896A (en) * | 2008-08-27 | 2009-01-21 | 浙江大学 | Winding type two-sided coating equipment |
| KR20120136029A (en) * | 2011-06-08 | 2012-12-18 | 주식회사 석원 | An apparatus and method for both sides sputering vacuum deposition |
| CN202601233U (en) * | 2012-05-21 | 2012-12-12 | 珠海兴业光电科技有限公司 | Flexible transparent conductive film |
| CN105658839A (en) * | 2013-07-29 | 2016-06-08 | 赢创德固赛有限公司 | Flexible composite, method for production thereof, and use thereof |
| CN104674176A (en) * | 2015-02-09 | 2015-06-03 | 常州工学院 | High-efficiency magnetron sputtering winding coating machine capable of continuously coating in double-sided reciprocated way |
| CN105349961A (en) * | 2015-11-30 | 2016-02-24 | 广东腾胜真空技术工程有限公司 | Multi-roller and multi-chamber coiling film coating device |
| CN108754446A (en) * | 2018-08-07 | 2018-11-06 | 安徽金美新材料科技有限公司 | A kind of winding type two-sided magnetic control sputtering vacuum coating equipment and film plating process |
| CN210127266U (en) * | 2019-05-14 | 2020-03-06 | 南京汇金锦元光电材料有限公司 | Reinforced isolation film for CIGS preparation and preparation device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104651791B (en) | Energy-saving flexible transparent conductive film and preparation method thereof | |
| CN204490985U (en) | Flexible transparent conductive film and preparation facilities thereof | |
| DE602005025293D1 (en) | Magnetron sputtering | |
| CN105349961A (en) | Multi-roller and multi-chamber coiling film coating device | |
| CN108624861A (en) | The vacuum deposition apparatus of two-sided continuous coating | |
| CN109554680B (en) | Winding type vacuum coating machine | |
| CN104775102B (en) | The vacuum coating system that volume to volume magnetic control sputtering cathode is combined with column multi-arc source | |
| CN204162778U (en) | A kind of can the magnetic-control sputtering coiling film coating machine of pattern generation | |
| CN106684184B (en) | A kind of copper-indium-galliun-selenium film solar cell Window layer and preparation method thereof | |
| CN216891172U (en) | Roll-to-roll equipment for electron beam evaporation double-sided coating | |
| CN205803586U (en) | A kind of multifunctional single Double-face continuous winding magnetic-controlled sputtering coating equipment | |
| CN110004423A (en) | CIGS preparation reinforcing isolation film and preparation method | |
| CN203653686U (en) | Film-coating device used for winding-type sputtering three-layer medium film | |
| CN202107634U (en) | Glass substrate adopting membrane system structure and plated with membrane layer | |
| CN205115591U (en) | Two water cooled rolls winding coating machine | |
| US11613466B2 (en) | Ultra-long chiral carbon nanotube, method for preparing the same, application thereof, and high-performance photoelectric device | |
| CN210127266U (en) | Reinforced isolation film for CIGS preparation and preparation device | |
| CN2339589Y (en) | Flexible-winding film-plating machine | |
| CN104630726A (en) | Nano ceramic heat-insulating film and preparation method thereof | |
| CN102409310A (en) | Method for continuously coating gradient cermet film by flexible metal substrate double target co-sputtering | |
| CN207468716U (en) | A kind of double-face vacuum plated film up- coiler | |
| CN110629185A (en) | Continuous vacuum coating machine of steel plate | |
| CN206872938U (en) | Fexible film gap winds magnetic control sputtering vacuum coating machine | |
| CN102358937A (en) | Continuous preparation method of cermet conposite membrane with large-area flexible metal substrate and high heat absorption | |
| CN201770771U (en) | Real-time film thickness monitoring system of coiled film coating machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190712 |