CN210127266U - Reinforced isolation film for CIGS preparation and preparation device - Google Patents
Reinforced isolation film for CIGS preparation and preparation device Download PDFInfo
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- CN210127266U CN210127266U CN201920686231.0U CN201920686231U CN210127266U CN 210127266 U CN210127266 U CN 210127266U CN 201920686231 U CN201920686231 U CN 201920686231U CN 210127266 U CN210127266 U CN 210127266U
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Abstract
The utility model provides a reinforced isolating film preparation device for CIGS preparation, which takes flexible organic materials as base materials and is used for preparing a film at one time, and the film has better fitting performance; the device comprises a plurality of magnetron sputtering devices in a vacuum coating cavity, wherein each magnetron sputtering device comprises a deposition cathode chamber and a cathode target, wherein the deposition cathode chamber takes argon as working gas and oxygen as reaction gas; the magnetron sputtering device is divided into a lower coating magnetron sputtering device for carrying out magnetron sputtering coating on the lower surface of the flexible organic substrate and an upper coating magnetron sputtering device for carrying out magnetron sputtering coating on the upper surface of the flexible organic substrate; a cold drum for cooling the continuously moving flexible organic base material is also arranged in the vacuum coating cavity; the utility model also provides a CIGS preparation is with reinforceing the barrier film, has better docile performance, is favorable to broadening the scope of seeing through the spectrum, widens spectrum transmission window width, helps increasing full light transmittance.
Description
Technical Field
The utility model relates to a CIGS makes field and vacuum coating field, provides a CIGS preparation is with reinforceing barrier film preparation facilities to flexible organic material is the substrate, uses the CIGS preparation of once making with flexibility, coiling formula, continuous type organic substrate magnetron sputtering coating film to reinforce the barrier film through this preparation facilities, has better obedience performance, but the wide application is in the manufacturing of flexible solar energy thin film battery.
Background
The substrate material commonly used in the flexible solar thin film cell is thin metal, and has poorer or even no application when being attached to any curved surface compared with the flexible organic thin film substrate. However, when the flexible organic substrate is used for producing a solar thin film battery, because defects such as a large amount of micro bubbles, bubbles formed by absorbing water in air and the like exist in the flexible organic film, particularly in a superficial part, in the production, the manufacture and the storage processes of the flexible organic film substrate material, the flexible organic substrate is broken and released in a magnetron sputtering high-vacuum cavity due to the influence of vacuum negative pressure. The released gas and water vapor have certain influence on the point deposition film, the light influence the consistency of the indexes of the deposition film, and the point deposition film is damaged seriously to cause serious defects.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a CIGS preparation is with reinforceing barrier film preparation facilities to flexible organic material is the substrate, uses the flexible organic material of continuous movement as the substrate, uses the CIGS preparation of once making with flexibility, coiling formula, continuous type organic substrate magnetron sputtering coating film to reinforce the barrier film through this preparation facilities, has better docile performance, but the wide application is in the manufacturing of flexible solar energy thin film battery.
The utility model aims at realizing through the following technical scheme:
the preparation device comprises a plurality of magnetron sputtering devices in a vacuum coating cavity, wherein each magnetron sputtering device comprises a deposition cathode chamber and a cathode target, wherein the deposition cathode chamber takes inert gas argon as working gas and oxygen as reaction gas; the magnetron sputtering device is divided into a lower coating magnetron sputtering device for carrying out magnetron sputtering coating on the lower surface of the flexible organic substrate and an upper coating magnetron sputtering device for carrying out magnetron sputtering coating on the upper surface of the flexible organic substrate; and a cold drum for cooling the continuously moving flexible organic base material is also arranged in the vacuum coating cavity.
The utility model has the advantages that:
when the reinforced isolation film is used, the continuously moving flexible organic substrate sequentially passes through the deposition cathode chambers of the magnetron sputtering devices, is cooled by a cold drum, takes inert gas argon as working gas and oxygen as reaction gas to enable the corresponding cathode target to generate aerobic reaction, and forms the reinforced isolation film for CIGS preparation by depositing the thin film layer of the cathode target oxide on the upper surface of the flexible organic substrate in a layering manner through the sputtering of the lower coating magnetron sputtering device after depositing the thin film layer of the cathode target oxide on the lower surface of the flexible organic substrate in a layering manner through the sputtering of the upper coating magnetron sputtering device.
The reinforced isolating film for preparing the CIGS is prepared by taking a continuously moving flexible organic material as a base material and performing magnetron sputtering coating on the flexible, winding and continuous organic base material through the preparation device at one time, has good compliance performance, and can be widely applied to production and manufacturing of flexible solar thin-film batteries.
According to the reinforced isolating film preparation device for CIGS preparation, the flexible organic substrate is PET or flexible organic glass.
The reinforced isolating film preparation device for CIGS preparation comprises a first magnetron sputtering device, a second magnetron sputtering device, a third magnetron sputtering device, a fourth magnetron sputtering device and a fourth magnetron sputtering device, wherein the cathode target materials are respectively Nb, Si and Al; the lower coating magnetron sputtering device consists of a first magnetron sputtering device and a second magnetron sputtering device and is used for sequentially depositing Nb on the lower surface of the flexible organic substrate2O5Transition layer, SiO2A lower isolation layer, a film coating magnetron sputtering device on the third and the fourth magnetron sputtering devices, which are used for depositing SiO on the upper surface of the flexible organic substrate in sequence2Upper insulating layer, Al2O3And hardening the layer.
The isolation layer attached to the surface of the flexible organic substrate is dense SiO2The layer plays a role in isolating low pressure in the magnetron sputtering vacuum coating cavity, prevents micro bubbles and water vapor which are superficial in the flexible organic substrate from being released under the action of low pressure, and ensures the film quality when the reinforced isolation film is used for preparing the CIGS for magnetron sputtering coating. Also, due to the transition layer Nb2O5、SiO2The combination of the lower isolating layer film layer is more beneficial to widening the range of the transmission spectrum, widening the width of the spectrum transmission window and being beneficial to increasing the total light transmittance.
The reinforced isolating film preparation device for CIGS preparation comprises a cavity body with an unwinding cavity, a vacuum coating cavity and a winding cavity, wherein the unwinding cavity and the winding cavity are respectively provided with an unwinding table for continuous discharging and a winding table for continuous receiving, and the vacuum coating cavity is internally provided with a first cold drum and a second cold drum; the first magnetron sputtering device and the second magnetron sputtering device are arranged around the first cold drum in the circumferential direction, and the third magnetron sputtering device and the fourth magnetron sputtering device are arranged around the second cold drum in the circumferential direction; the flexible organic base material is discharged from the unwinding table, then is led into a first cold drum, is cooled by the first cold drum, passes through a first magnetron sputtering device and a second magnetron sputtering device to deposit a cathode chamber, and then is led out by the first cold drum; leading the single-side film into a second cold drum, cooling the single-side film by the second cold drum, passing through a third magnetron sputtering device and a fourth magnetron sputtering device to deposit a cathode chamber, and then forming a CIGS preparation to be rolled by a rolling table; the upper surface of the flexible organic substrate is movably arranged on the first cold drum, and the lower surface of the single-side film is movably arranged on the second cold drum.
In the reinforced isolating film preparation device for CIGS preparation, the first magnetron sputtering device and the second magnetron sputtering device are circumferentially arranged on the left side of the first cold drum around the first cold drum, and the third magnetron sputtering device and the fourth magnetron sputtering device are circumferentially arranged on the right side of the second cold drum around the second cold drum; the flexible organic base material is led in from the upper part of the first cold drum, led out from the lower part of the first cold drum, led in from the upper part of the second cold drum and led out from the lower part of the second cold drum.
The distance between the cathode target surfaces of the first, second, third and fourth sputtering control devices and the surface of the cold drum is 195-205 mm.
The double-cold-drum double-side one-time deposition coating is adopted, so that the working time is saved, the defect caused by secondary winding and unwinding deposition coating is avoided, and the yield is improved.
The utility model simultaneously provides a CIGS preparation is with reinforceing barrier film, it includes flexible organic substrate, through magnetron sputtering technique deposit Nb on flexible organic substrate lower surface in proper order2O5Transition layer, SiO2A lower isolation layer and SiO sequentially deposited on the upper surface of the flexible organic substrate2Upper isolation layer, Al2O3And hardening the layer.
In the reinforced isolating film for CIGS preparation, the flexible organic substrate is PET, and the thickness of the flexible organic substrate is 120-130 ㎛; nb2O5The thickness of the transition layer is 4-6 nm, and SiO is2The thickness of the lower isolation layer is 8-12 nm, and SiO is2The upper isolation layer is 8-12 nm thick and Al2O3The thickness of the hardened layer is 8-12 nm.
Drawings
Fig. 1 is a schematic view of a reinforced separator film for CIGS fabrication;
fig. 2 is a schematic view of a device for manufacturing a reinforced separator for CIGS manufacturing.
Detailed Description
The present invention will be further explained with reference to the accompanying drawings:
referring to the reinforced isolating film for preparing the CIGS shown in figure 1 and the reinforced isolating film for preparing the CIGS shown in figure 2, the preparation device is a disposable double-sided magnetron sputtering deposition device and comprises a plurality of magnetron sputtering devices in a vacuum coating cavity Q2, wherein each magnetron sputtering device comprises a deposition cathode chamber taking inert gas argon as working gas and oxygen as reaction gas, and a cathode target material positioned in the deposition cathode chamber.
The magnetron sputtering device is divided into a lower coating magnetron sputtering device for carrying out magnetron sputtering coating on the lower surface of the flexible organic substrate B1 and an upper coating magnetron sputtering device for carrying out magnetron sputtering coating on the upper surface of the flexible organic substrate B1; a cold drum for cooling the continuously moving flexible organic base material B1 is also provided in the vacuum coating chamber Q2.
The continuously moving flexible organic substrate B1 was passed through the deposition cathode chambers S5, S6, S7, and S8 of the respective magnetron sputtering apparatuses in this order, and the cathode target oxide was deposited on the upper and lower surfaces of the flexible organic substrate B1 at one time by sputtering of the respective magnetron sputtering apparatuses.
The preparation device of the reinforced isolating membrane for CIGS preparation comprises a cavity Q which is divided into an unreeling cavity Q1, a vacuum coating cavity Q2 and a reeling cavity Q3 by a left partition plate G1 and a right partition plate G2, wherein an unreeling platform S1 for continuously unreeling is arranged in the unreeling cavity Q1, a reeling platform S2 for continuously receiving materials is arranged in the reeling cavity Q3, and a first cold drum S3 and a second cold drum S4 are arranged in the vacuum coating cavity Q2 (the first cold drum S3 and the second cold drum S4 are collectively called cold drums); the first magnetron sputtering device and the second magnetron sputtering device are circumferentially arranged around the first cold drum S3, and the third magnetron sputtering device and the fourth magnetron sputtering device are circumferentially arranged around the second cold drum S4; the flexible organic substrate B1 is fed from the unwinding stand S1, introduced into the first cold drum S3, cooled by the first cold drum S3, passed through the first and second magnetron sputtering apparatuses in this order to deposit the cathode chambers S5 and S6, and then led out by the first cold drum S3 to form a mono-film B6; the single-side film B6 is guided into a second cold drum S4, cooled by the second cold drum S4, sequentially passes through a third magnetron sputtering device and a fourth magnetron sputtering device to deposit cathode chambers S7 and S8, and then forms a reinforced isolation film B7 for CIGS preparation, and is wound by a winding table S2; the upper surface of the flexible organic substrate B1 is movably disposed on the first cold drum S3, the lower surface of the mono film B6 is movably disposed on the second cold drum S4, the upper surface of the flexible organic substrate B1 is closely attached to the circumferential surface of the first cold drum S3, and the lower surface of the mono film B6 is closely attached to the circumferential surface of the second cold drum S4.
In the figure, the cavity Q is divided into an unreeling cavity Q1, a vacuum coating cavity Q2 and a reeling cavity Q3 from left to right, the first magnetron sputtering device and the second magnetron sputtering device are circumferentially arranged on the left side of the first cold drum S3 around the first cold drum S3 on the left side of the vacuum coating cavity Q2, and the third magnetron sputtering device and the fourth magnetron sputtering device are circumferentially arranged on the right side of the second cold drum S4 around the second cold drum S4 on the right side of the vacuum coating cavity Q2; the flexible organic substrate B1 was guided by the guide roller D1 to be introduced from above the first cold drum S3, led out from below the first cold drum S3, introduced from above the second cold drum S4, and led out from below the second cold drum S4 by the guide roller D2.
The distance from the cathode target surface S9 of the first, second, third and fourth sputtering control devices to the surface of the cold drum is 195-205 mm. In the scheme, the distance is 200 mm.
The flexible organic substrate is PET or flexible organic glass. In the present case, the flexible organic substrate B1 is PET.
The magnetron sputtering device comprises a first, a second, a third and a fourth magnetron sputtering devices, cathode targets in deposition cathode chambers S5, S6, S7 and S8 are respectively Nb, Si and Al, working gas is inert gas, and reaction gas is O2. In the scheme, the inert gas is argon.
The flexible organic substrate B1 sequentially passes through the first magnetron sputtering device, the second magnetron sputtering device and the fourth magnetron sputtering device; under the action of aerobic reaction magnetron sputtering deposition, Nb is sequentially deposited on the lower surface of the flexible organic substrate B1 by the action of a first magnetron sputtering device and a second magnetron sputtering device which form an upper coating magnetron sputtering device2O5Transition layer of B1, SiO2The lower isolation layer is used for sequentially depositing SiO on the upper surface of the flexible organic substrate under the action of a third magnetron sputtering device and a fourth magnetron sputtering device of the lower coating magnetron sputtering device2Upper isolation layer, Al2O3And hardening the layer.
The vacuum states in the unreeling cavity Q1, the vacuum coating cavity Q2 and the reeling cavity Q3 are mutually isolated, namely, the vacuum coating cavity Q2 can still keep a working state when unreeling or reeling is carried out, and space support is provided for the strengthened isolation film for CIGS preparation, which can be infinitely continuous and uniform when the preparation device of the strengthened isolation film for CIGS preparation is used for carrying out magnetron sputtering.
By controlling the pressure in the vacuum coating cavity Q2, the continuous moving speed of the flexible organic substrate B1, the sputtering power and the working temperature of each magnetron sputtering device, the vacuum degree in the deposition cathode chamber of each magnetron sputtering device, the flow rate of the charged oxygen and the flow rate of the charged argon under the drawing action of the winding table S2, and performing magnetron sputtering deposition coating on the flexible organic substrate B1 by causing the corresponding cathode target material to have an oxygen reaction in each magnetron sputtering device is the prior art and is not described herein again.
The utility model simultaneously provides a CIGS preparation is with reinforceing barrier film, it includes that flexible is organicA substrate of Nb deposited on the lower surface of the flexible organic substrate by magnetron sputtering technique2O5Transition layer, SiO2A lower isolation layer and SiO sequentially deposited on the upper surface of the flexible organic substrate2Upper isolation layer, Al2O3And hardening the layer.
In the reinforced isolating film for CIGS preparation, the flexible organic substrate is PET, and the thickness of the flexible organic substrate is 120-130 ㎛; nb2O5The thickness of the transition layer is 4-6 nm, and SiO is2The thickness of the lower isolation layer is 8-12 nm, and SiO is2The upper isolation layer is 8-12 nm thick and Al2O3The thickness of the hardened layer is 8-12 nm.
The preparation process comprises the following steps:
a coiled material of a flexible organic base material PET (the thickness of the flexible organic base material PET is 125 ㎛ in the embodiment) with the thickness of 120-130 ㎛, the coiling length of 1500M and the width of 1340mm is placed in an uncoiling platform S1, is guided by a guide roller D1, is guided by the upper part of a first cold drum S3, passes through a gap between a first magnetron sputtering device and a second magnetron sputtering device and a first cold drum S3, is guided by the lower part of the first cold drum S3, is guided by the upper part of a second cold drum S4, passes through a gap between a third magnetron sputtering device and a fourth magnetron sputtering device and the second cold drum S4, is guided by a guide roller D2, is guided by the lower part of the second cold drum S4, and is connected with a coiling platform S2;
sequentially putting cathode targets Nb, Si and Al into corresponding magnetron sputtering devices to deposit cathode chambers;
the winding table S2 drags the flexible organic base material PET from the unwinding table S1 to unwind continuously at a constant speed;
in each magnetron sputtering device, inert gas argon is used as working gas, oxygen is used as reaction gas, corresponding cathode target materials are subjected to aerobic reaction to carry out magnetron sputtering deposition coating on the flexible organic substrate PET, and Nb with the thickness of 4-6 nm is deposited on the lower surface of the flexible organic substrate PET when the flexible organic substrate PET passes through the first magnetron sputtering device2O5Transition layer B2, when it passed through the second magnetron sputtering apparatus, in Nb2O5SiO deposited on the transition layer B2 with the thickness of 8-12 nm2The lower isolation layer B3 forms a single-sided film B6, and passes through the third magnetron sputtering device and is flexibleSiO with the deposition thickness of 8-12 nm on the upper surface of the machine substrate PET2The upper isolation layer B4 is formed on SiO layer by the fourth magnetron sputtering device2Al with the thickness of 8-12 nm is deposited on the upper isolation layer B42O3The hardened layer B5 forms a CIGS preparation reinforcing isolation film B7;
the reinforced separator B7 for CIGS production is wound by the winding stage S2.
In this example, Nb is added to the strengthened separator B7 for CIGS production after film formation2O5Transition layer B2, SiO2Lower isolation layer B3, SiO2Upper isolation layer B4, Al2O3The thicknesses of the cured layer B5 were 5nm, 10nm, and 10nm, respectively.
The utility model has the advantages that:
the utility model provides a CIGS preparation is with preparation facilities of reinforceing barrier film. The reinforced isolating film for preparing the CIGS is prepared by taking a continuously moving flexible organic material as a base material and carrying out magnetron sputtering coating on the flexible, winding and continuous organic base material through the preparation device at one time, has good conformance performance, and can be widely applied to the production and the manufacture of flexible solar thin-film batteries.
SiO attached to surface of flexible organic substrate2The lower isolation layer is dense SiO2The layer plays a role in isolating low pressure in the magnetron sputtering vacuum coating cavity, prevents micro bubbles and water vapor which are superficial in the flexible organic substrate from being released under the action of low pressure, and ensures the film quality when the reinforced isolation film is used for preparing the CIGS for magnetron sputtering coating.
Due to the transition layer Nb2O5、SiO2The combination of the lower isolating layer film layer is more beneficial to widening the range of the transmission spectrum, widening the width of the spectrum transmission window and being beneficial to increasing the total light transmittance.
The double-cold-drum double-side one-time deposition coating is adopted, so that the working time is saved, the defect caused by secondary winding and unwinding deposition coating is avoided, and the yield is improved.
Claims (8)
- The reinforced isolating film preparation device for CIGS preparation is characterized by comprising a plurality of magnetron sputtering devices in a vacuum coating cavity, wherein each magnetron sputtering device comprises a deposition cathode chamber and a cathode target, wherein the deposition cathode chamber takes inert gas argon as working gas and oxygen as reaction gas; the magnetron sputtering device is divided into a lower coating magnetron sputtering device for carrying out magnetron sputtering coating on the lower surface of the continuously moving flexible organic substrate and an upper coating magnetron sputtering device for carrying out magnetron sputtering coating on the upper surface of the flexible organic substrate; and a cold drum for cooling the continuously moving flexible organic base material is also arranged in the vacuum coating cavity.
- 2. The CIGS manufacturing reinforced separator film manufacturing apparatus as recited in claim 1, wherein the flexible organic substrate is PET or flexible organic glass.
- 3. The CIGS production reinforced separator film production apparatus as recited in claim 1, wherein the magnetron sputtering apparatus includes first to fourth magnetron sputtering apparatuses each having a cathode target of Nb, Si, or Al; the first and second magnetron sputtering devices forming the lower coating magnetron sputtering device are used for sequentially depositing Nb on the lower surface of the flexible organic substrate2O5Transition layer, SiO2A lower isolation layer, a third magnetron sputtering device and a fourth magnetron sputtering device which form the upper coating magnetron sputtering device and are used for sequentially depositing SiO on the upper surface of the flexible organic substrate2Upper isolation layer, Al2O3And hardening the layer.
- 4. The manufacturing device of the reinforced isolating film for the preparation of CIGS, as recited in claim 1, comprises a chamber body having an unwinding chamber, a vacuum coating chamber and a winding chamber, wherein the unwinding chamber and the winding chamber are respectively provided with an unwinding table for continuous discharging and a winding table for continuous receiving, and the vacuum coating chamber is provided with a first cold drum and a second cold drum; the first magnetron sputtering device and the second magnetron sputtering device are arranged around the first cold drum in the circumferential direction, and the third magnetron sputtering device and the fourth magnetron sputtering device are arranged around the second cold drum in the circumferential direction; the flexible organic base material is discharged from the unwinding table, then is led into a first cold drum, is cooled by the first cold drum, passes through a first magnetron sputtering device and a second magnetron sputtering device to deposit a cathode chamber, and then is led out by the first cold drum; leading the single-side film into a second cold drum, cooling the single-side film by the second cold drum, passing through a third magnetron sputtering device and a fourth magnetron sputtering device to deposit a cathode chamber, and then forming a CIGS preparation to be rolled by a rolling table; the upper surface of the flexible organic substrate is movably arranged on the first cold drum, and the lower surface of the single-side film is movably arranged on the second cold drum.
- 5. The CIGS manufacturing reinforcing barrier film manufacturing apparatus as recited in claim 4, wherein the first and second magnetron sputtering apparatuses are disposed on the left side of the first cold drum in the circumferential direction of the first cold drum, and the third and fourth magnetron sputtering apparatuses are disposed on the right side of the second cold drum in the circumferential direction of the second cold drum; the flexible organic base material is led in from the upper part of the first cold drum, led out from the lower part of the first cold drum, led in from the upper part of the second cold drum and led out from the lower part of the second cold drum.
- 6. The manufacturing apparatus of a reinforced separator film for CIGS manufacturing according to claim 4, wherein the cathode target surfaces of the first, second, third and fourth magnetron sputtering apparatuses are spaced 195 to 205mm from the surface of the cold drum.
- The reinforced isolating film for preparing the CIGS is characterized by comprising the following components in parts by weight: comprises a flexible organic substrate and Nb which is sequentially deposited on the lower surface of the flexible organic substrate by a magnetron sputtering technology2O5Transition layer, SiO2A lower isolation layer and SiO sequentially deposited on the upper surface of the flexible organic substrate2Upper isolation layer, Al2O3And hardening the layer.
- 8. The CIGS production reinforced separator as recited in claim 7, wherein the flexible organic substrate is PET having a thickness of 120 to 130 ㎛; nb2O5The thickness of the transition layer is 4-6 nm, and SiO is2The thickness of the lower isolation layer is 8-12 nm, and SiO is2The upper isolation layer is 8-12 nm thick and Al2O3The thickness of the hardened layer is 8-12 nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110004423A (en) * | 2019-05-14 | 2019-07-12 | 南京汇金锦元光电材料有限公司 | CIGS preparation reinforcing isolation film and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110004423A (en) * | 2019-05-14 | 2019-07-12 | 南京汇金锦元光电材料有限公司 | CIGS preparation reinforcing isolation film and preparation method |
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