CN104651791B - Energy-saving flexible transparent conductive film and preparation method thereof - Google Patents
Energy-saving flexible transparent conductive film and preparation method thereof Download PDFInfo
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Abstract
The present invention provides a kind of preparation method of energy-saving flexible transparent conductive film, without high annealing after film forming, reduces energy consumption；Film crystallization degree reaches 80%, is suitable for extensive, industrialization production.This method uses multiple magnetic control sputtering devices in a vacuum coating intracavitary, each magnetic control sputtering device is included using inert gas as working gas, using oxygen as the sputtering chamber of reacting gas, the target in sputtering chamber, the flexible and transparent base material of continuous moving passes sequentially through the sputtering chamber of each target drone, flexible and transparent base material temperature<80 DEG C, the oxygen of each sputtering chamber and the flow of inert gas are passed through by control so that target or target oxide are disposably deposited on flexible and transparent base material.The present invention also provides a kind of light transmittance height, and resistivity is low, the low energy-saving flexible transparent conductive film of chromatic value, and it includes flexible and transparent base material and the SiO being sequentially deposited on flexible and transparent base material2Layer, Nb2O5Layer, Nb2OxLayer (x=4.5 4.98), SiO2Layer, silver layer or layers of copper, semiconductor oxide nitride layer.
Description
Technical field
The technology of the present invention is related to a kind of energy-saving flexible transparent conductive film and preparation method thereof, and the flexible and transparent conductive is thin
Film is widely used in the manufacture of flexible display device, flexible intelligent touch-screen, flexible thin-film solar cell.
Background technology
Flexible transparent conductive film is widely used in flexible aobvious due to characteristics such as its distinctive flexible, frivolous, high-transmission rates
Show, the field such as thin-film solar cells, intelligent fenestrated membrane, touch-screen.
Tin-doped indium oxide (ITO) is used as transparent conductive film material at present, due in manufacture and application technology very
Maturation, using very extensive.But due to its characteristic requirements, its optimal film-forming temperature is at 300 DEG C or so.But for flexible, ultra-thin
Transparent substrate material (such as PET classes), is progressively deformed with the increase base material of temperature, is started sternly when temperature reaches 150 DEG C
Deform again.The transparent conductive film for generally making large area flexible substrate uses magnetron sputtering deposition film forming, controls flexible substrates
Material temperature is less than 100 DEG C, and film forming finishes, and in practical application using 150 DEG C of high annealings 1 hour, makes transparent conductive film
The further crystallization of crystal grain.Although this method improves the optics of conductive film, electric property, but add the consumption of the energy, together
When higher is required to the heat resistance of base material, it is ensured that in high annealing, base material is indeformable or a small amount of deformation.
The content of the invention
The present invention provides a kind of preparation method of energy-saving flexible transparent conductive film, using magnetron sputtering deposition film forming in
On flexible and transparent base material, deposition film forming base reservoir temperature is less than 80 DEG C, without high annealing after film forming, reduces energy consumption；Film crystallization journey
Degree reaches 80%, and optical transmission window is wide, and full light light transmittance is high up to 95%；It is suitable for extensive, industrialization production.
Energy-saving flexible transparent conductive film preparation method of the present invention, it is used in vacuum coating intracavitary
Multiple magnetic control sputtering devices, each magnetic control sputtering device are included using inert gas as working gas, using oxygen as reacting gas
Sputtering chamber, the target in sputtering chamber, it is characterized in that, the flexible and transparent base material of continuous moving passes sequentially through the sputtering of each target drone
Chamber, flexible and transparent base material temperature<80 DEG C, by the sputtering of each magnetic control sputtering device, and control the oxygen for being passed through each sputtering chamber and
The flow of inert gas so that target or target oxide are disposably deposited on by ionizing at aura surface impurity and roughness
On the flexible and transparent base material of reason.
Above-mentioned energy-saving flexible transparent conductive film preparation method, the gas pressure in each sputtering chamber are equal.Pass through control
System is passed through ionic discharge chamber (sputtering chamber) working gas and reaction gas flow, so as to control various partial pressures so that adjacent
Sputtering chamber in gas pressure it is equal, ensure to make reacting gas in a certain sputtering chamber by reason of heavy pressure, and splash to neighbouring
Penetrate chamber flowing.So that it is guaranteed that anaerobic (non-reaction) deposition is normally carried out, corresponding target poisoning or coating oxidation will not be made.
Above-mentioned energy-saving flexible transparent conductive film preparation method, it is single respectively that flexible and transparent base material, which passes sequentially through target,
Brilliant Si, Nb2Ox、Nb2Ox, single crystalline Si, silver or copper, the first to the 6th magnetic control sputtering device of conductor oxidate；Except the 5th magnetic control
Outside sputter equipment, the sputtering chamber of other magnetic control sputtering devices is passed through the oxygen as reacting gas；On flexible and transparent base material
It is sequentially depositing SiO2、Nb2O5、Nb2Ox(x=4.5-4.98), SiO2, silver or copper, conductor oxidate.Nb2Ox(x=4.5-
4.98) be oxygen loss state niobium oxide, with Nb2O5(niobium oxide of complete oxidation) is entirely different.
Above-mentioned energy-saving flexible transparent conductive film preparation method, in the first magnetic control sputtering device, oxygen flow
12sccm, argon flow amount 500sccm, sputtering power 2.0KW, vacuum reach 4X10-3torr；
In second magnetic control sputtering device, oxygen flow 50sccm, argon flow amount 400sccm, sputtering power 16.4KW, vacuum
Degree reaches 4X10-3torr；
In 3rd magnetic control sputtering device, oxygen flow 10sccm, argon flow amount 500sccm, sputtering power 10.0KW, vacuum
Degree reaches 4X10-3torr；
In 4th magnetic control sputtering device, oxygen flow 30sccm, argon flow amount 450sccm, sputtering power 20.0KW, vacuum
Degree reaches 4X10-3torr；
In 5th magnetic control sputtering device, argon flow amount 400sccm, sputtering power 6.0KW, vacuum reach 4X10-3torr；
In 6th magnetic control sputtering device, oxygen flow 2sccm, argon flow amount 300sccm, sputtering power 4.0KW, vacuum
Reach 4X10-3torr。
Above-mentioned vacuum 4X10-3Torr is (about in 2.5-6X10-3Torr) it is best effort vacuum.Sputtering power,
Argon gas, oxygen flow are to cooperate, with the density for reaching optimal deposition efficiency, depositing caudacoria.Wherein power can be 1.0
To 20Kw argons, oxygen flow 0-1000sccm, or it is higher.These factors influence the light transmission, resistance, attachment of deposition caudacoria
Performance, it is combined with Best Point, high not all right, low also not all right.Above-mentioned data are after one group obtained after testing causes deposition
Data of film when there are the performance indications such as optimal light transmittance, face impedance, adhesive force.Particularly argon, oxygen flow, oxygen conduct
Reacting gas, amount of oxygen number directly both when having influence on deposition the target extent of reaction (particularly control the heavy of oxygen loss state
Product, such as Nb2Ox(x=4.5-4.98)).And argon gas amount must coordinate with amount of oxygen, to meet the stabilization of vacuum.
Above-mentioned energy-saving flexible transparent conductive film preparation method, flexible and transparent base material are PET or flexible glass.
Above-mentioned energy-saving flexible transparent conductive film preparation method, it has including one unreels chamber, plating membrane cavity and receipts
The cavity of chamber is rolled up, unreels chamber, winding intracavitary sets let off roll, wind-up roll respectively, plated film intracavitary setting chill roll；Each magnetron sputtering
Device ring is set around chill roll；Flexible and transparent base material is cooled down through chill roll after being released from let off roll, filled through each magnetron sputtering
Wound after the sputtering chamber put by wind-up roll.The cavity compact overall structure, occupies little space, and wherein plated film intracavitary magnetron sputtering fills
Putting quantity can determine according to film plating layer structural requirement.Plating membrane cavity has the separate space of non-close.
Above-mentioned energy-saving flexible transparent conductive film preparation method, it is additionally provided with unreeling intracavitary for flexible and transparent
The glow discharge ion surface processing unit that the pre-deposition surface of base material is handled.Glow discharge ion surface processing unit category
In prior art, its operation principle, effect：Working gas argon is passed through in the working chamber of glow discharge ion surface processing unit
Gas, applying gas oxygen, by Ions Bombardment caused by glow discharge through the surface of the flexible and transparent base material of working chamber, remove
All kinds of foreign impurities of flexible and transparent substrate surface and to surface etching treatment, improve surface hydrophilicity.Due to glow discharge can
Control property, can remove surface opposite sex magazine, and the surface roughness after handling is controllable, uniformity is good, is advantageous to increase coating
Adhesive force.
The beneficial effect of the preparation method of the present invention：The present invention is different from mixing titanium indium oxide, titanium-doped zinc oxide conductive film
Preparation, multiple magnetic control sputtering devices of the invention are located in same vacuum chamber, and aerobic/anaerobic reactive sputtering is carried out simultaneously,
So that target or target oxide are disposably deposited on flexible and transparent base material.
The present invention is controlled using working gas, reaction gas flow so that aerobic reaction and the non-reaction magnetocontrol sputtering of anaerobic
Deposition is carried out simultaneously, and disposable continuous uniform is deposited on continuous, low profile flexible transparent base (such as PET, flexible glass of wide cut
Deng) on surface, form SiO2/Nb2O5/Nb2Ox(x=4.5-4.98)/SiO2/ metal conducting layer (silver or copper)/semiconductor oxide
The flexible transparent conductive film of thing (titanium-doped zinc oxide tin or indium tin) structure.Specifically,
1st, industry manufacture chain energy-conservation.Low temperature magnetic sputtering deposits film forming (base reservoir temperature<80 DEG C) crystallization, following process, system
Make and reach 80% using without (150 DEG C) annealing of high temperature, flexible conductive film crystallization degree, reduce high annealing process, reduce energy
Source consumes.
The signified flexible and transparent basement membrane of the present invention refers to PET class organic films, can be deformed because temperature raises, influence to plate film quality
Measure (including flatness, adhesion of coating film, coated optics electricity uniformity).
During magnetron sputtering plating, because base material is influenceed by Ions Bombardment, simultaneously because in sputtering target material deposition process
Oxidation reaction heat release, basement membrane temperature can raise.Under normal circumstances, base material is under no protection, cooling measure during magnetron sputtering, table
Face temperature is or higher up to 400-600 DEG C.So (such as PET classes) flexible and transparent basement membrane is deformed for being easily affected by temperature, magnetic
During control sputtering, base reservoir temperature is more low better.Flexible and transparent substrate deformation with regard to smaller, coating quality (depositional coating thickness it is uniform
Property, adhesion of the depositional coating between basement membrane) it is better.This technology uses base reservoir temperature<80 DEG C, be that base reservoir temperature is controlled
Index, it ensure that coating quality.
2nd, using energy-conservation, there is high printing opacity, Low ESR, the strong feature of sensitiveness.Flexible transparent conductive film optics, electrical property
Energy index is with suitable after commonsense method film forming, and flexible transparent conductive film optical transmission window is wide, light transmitting wavelength 300-2000nm, Quan Guang
Line light transmittance is high (up to 95%), and resistivity is low (reaching 9*10-5 Ω cm), the low (b of chromatic value*≤0.8)。
3rd, in the continuous handshaking procedure of flexible substrates, magnetron sputtering operating room is maintained to working condition.The preparation side
Method production efficiency is high, and vertically and horizontally technical target of the product uniformity is good, is suitable for extensive, industrialization production.
High present invention simultaneously provides a kind of light transmittance, resistivity is low, the low energy-saving flexible transparent conductive film of chromatic value.
The present invention energy-saving flexible transparent conductive film, including flexible and transparent base material and by magnetron sputtering technique successively
The SiO being deposited on flexible and transparent base material2Layer, Nb2O5Layer, Nb2Ox(x=4.5-4.98) layer, SiO2Layer, silver layer or layers of copper, half
Conductive oxide layers.
Above-mentioned energy-saving flexible transparent conductive film, conductor oxidate are titanium-doped zinc oxide tin or mix titanium indium oxide
Tin；The composition of conductor oxidate is：Mass ratio is 2-7.5% TiO2, 2-7.5% Sn2O3, remaining content ZnO2Or
In2O3。
Above-mentioned energy-saving flexible transparent conductive film, flexible and transparent base material, SiO2Layer, Nb2O5Layer, Nb2OxLayer, SiO2
Layer, silver layer or layers of copper, the thickness of semiconductor oxide nitride layer are respectively：20-50μm；2-5nm；5-10nm；2-10nm；5-25nm；
5-25nm；5-25nm.
Brief description of the drawings
Fig. 1 is the schematic diagram of energy-saving flexible transparent conductive film
Fig. 2 is the preparation facilities schematic diagram of energy-saving flexible transparent conductive film
Embodiment
Shown in Figure 2 is prepares the device of energy-saving flexible transparent conductive film, it include one with unreel chamber C1,
Plate membrane cavity C2 and wind chamber C3 cavity, unreel intracavitary and let off roll A1 and glow discharge ion surface processor GD, winding are set
Intracavitary sets wind-up roll A2, and plated film intracavitary sets chill roll B1.Unreel in the cavity wall between chamber and plating membrane cavity, wind chamber and plated film
Vacuum is provided with cavity wall between chamber and keeps valve gear E1.Unreel chamber, plating membrane cavity and winding chamber be respectively provided with vacuumize it is true
The gas tube of empty pump and filling with inert gas gas.
First, second, third and fourthth, five, six magnetic control sputtering device (target drone) D1, D2, D3, D4, D5, D6 are set around chill roll；
Flexible and transparent base material released from let off roll after through the cooling of chill roll winding, through being received after the sputtering chamber of each magnetic control sputtering device
Winding up roller is wound.Unreel chamber, plating membrane cavity and wind the vacuum state of intracavitary and be mutually isolated, i.e., in upper volume or when making the test, plated film
Intracavitary still keeps working condition, and the flexible and transparent transparent conductive film obtained using device progress magnetron sputtering can be nothing
Limit continuous uniform.
Target in first, fourth magnetic control sputtering device is monocrystalline silicon, resistivity≤0.2 Ω cm, 5N.Second and third magnetic control
Target in sputter equipment is Nb2OX,X=4.5~4.98, resistivity≤5 Ω cm, 4N.Target in 5th magnetic control sputtering device
Material is silver or OFHC (oxygen-free high-conductivity electrolytic copper), 5N.Target in 6th magnetic control sputtering device (mixes titanyl for conductor oxidate
Zinc-tin or indium tin), 4N.Titanium-doped zinc oxide tin component is 2-7.5wt%TiO2, 2-7.5wt%Sn2O3, remaining is ZnO2；Mix titanium
Tin indium oxide component is 2-7.5wt%TiO2, 2-7.5wt%Sn2O3, remaining is In2O3。
During magnetron sputtering deposition, in addition to inert gas argon gas is used as working gas, first, second, third and fourth,
Oxygen is also passed through in six magnetic control sputtering devices, that is to say, that in Si, Nb2Ox, during titanium-doped zinc oxide tin or indium tin deposition point
The oxygen of different flow is not passed through as reacting gas, is respectively obtained by the flow and partial pressure that control deposition reaction gas
SiO2、Nb2O5、Nb2Ox(x=4.5-4.98), SiO2, titanium-doped zinc oxide tin (indium tin) film.In the 5th magnetic control sputtering device
Oxygen is not passed through, silver-colored (or copper) target drone ionic discharge intracavitary oxygen flow and partial pressure are 0.
Each magnetic control sputtering device has an independent ionic discharge chamber (sputtering chamber) respectively, by respective sputtering chamber
Working gas and reaction gas flow control so that partial pressure and equal in each sputtering chamber, are discharged between adjacent magnetic control sputtering device
It does not interfere with each other.When passing sequentially through above-mentioned target drone so as to reach continuous flexible transparent base, control is aerobic to plate with anaerobic reactive deposition
Film can be carried out simultaneously.Flexible and transparent substrate surface and target spacing 20-50mm.It is furnished with high-vacuum molecular pump in each target drone, controls
The target drone ionic discharge chamber vacuum.
During magnetron sputtering deposition, adjacent ionic discharge intracavitary working gas and reacting gas partial pressure sum phase are controlled
Deng, deposition do not interfere with each other with course of reaction.
By controlling ionic discharge chamber (sputtering chamber) working gas and reaction gas flow, so as to control various gases point
Pressure, ensure to make reacting gas in a certain sputtering chamber by reason of heavy pressure, and flowed to neighbouring sputtering chamber.So that it is guaranteed that anaerobic
(non-reaction) deposition is normally carried out, and will not make corresponding target poisoning or coating oxidation.
During magnetron sputtering deposition, flexible and transparent base material is wound by chill roll, and the coolant temperature being passed through in chill roll is permanent
For temperature control system at 6 ± 0.5 DEG C, flexible and transparent base material temperature is less than 80 DEG C (being typically up to 50 DEG C).
It is additionally provided with unreeling intracavitary for carrying out surface impurity and roughness to the pre-deposition surface of flexible and transparent base material
The glow discharge ion surface processing unit GD of processing.
Specific preparation process is as follows；
Flexible and transparent substrate PET, roll up length 1500M, breadth 1340mm, 25 μm of thickness.Let off roll is put into, and through plating membrane cavity
Connect wind-up roll.Successively by Si (monocrystalline), Nb2Ox、Nb2Ox, Si (monocrystalline), silver, titanium-doped zinc oxide tin target be put into corresponding target
Machine.
Start flexible and transparent substrate PET trailer systems, speed of service 1m/min.It is true that chamber, plating membrane cavity, winding chamber are unreeled simultaneously
Empty degasification, makes vacuum reach 3X10-6torr；
Plating membrane cavity is filled with argon gas and reaches working condition, vacuum is reached 4X10-3Torr, running under power speed reach 4m/
min；
Oxygen flow 50sccm, argon flow amount 500sccm, the aura being passed through in glow discharge ion surface processing unit GD
The power 1.5KW of discharge ion surface processing device, vacuum reach 4X10-3torr；
It is passed through the oxygen flow 12sccm, argon flow amount 500sccm, sputtering of the ionic discharge chamber of the first magnetic control sputtering device
Power 2.0KW, vacuum reach 4X10-3torr；
It is passed through the oxygen flow 50sccm, argon flow amount 400sccm, sputtering of the ionic discharge chamber of the second magnetic control sputtering device
Power 16.4KW, vacuum reach 4X10-3torr；
It is passed through the oxygen flow 10sccm, argon flow amount 500sccm, sputtering of the ionic discharge chamber of the 3rd magnetic control sputtering device
Power 10.0KW, vacuum reach 4X10-3torr；
Be passed through the oxygen flow 30% (PEM) of the ionic discharge chamber of the 4th magnetic control sputtering device, argon flow amount 450sccm,
Sputtering power 20.0KW, vacuum reach 4X10-3torr；
It is passed through the oxygen flow 0sccm, argon flow amount 400sccm, sputtering of the ionic discharge chamber of the 5th magnetic control sputtering device
Power 6.0KW, vacuum reach 4X10-3torr；
It is passed through the oxygen flow 2sccm, argon flow amount 300sccm, sputtering of the ionic discharge chamber of the 6th magnetic control sputtering device
Power 4.0KW, vacuum reach 4X10-3torr。
The energy-saving flexible transparent conductive film prepared by the above method is referring to Fig. 1, the μ of 1 thickness of flexible and transparent base material 25
m；SiO23 thickness 5nm of layer；Nb2O54 thickness 10nm of layer；Nb2Ox(x=4.5-4.98) the thickness 5nm of layer 5；SiO26 thickness 25nm of layer；
The thickness 10nm of metal silver conductive layer 7；The thickness 20nm of titanium-doped zinc oxide tin layers 8.The back side of flexible and transparent base material 1 has Surface hardened layer
Layer 2.
The energy-saving flexible transparent conductive film prepared, then without 150 DEG C of high annealings (or in flexible display device, soft
Property intelligent touch screen, flexible thin-film solar cell manufacture application in cancel annealing) process, its crystallinity reach 80% with
On, total light transmittance Tt reaches 95%, resistivity and reaches 9*10-5 Ω cm, colourity b*Below 0.8.
When a roll of flexible and transparent base material on let off roll is close to when reaching the end of reel, traction stops, closing vacuum holding valve E1,
E2, now flexible and transparent base material, which remains in that, is continuously located at winding chamber, plating membrane cavity and winding intracavitary.Then to unreeling chamber, receiving
Volume chamber rushes down vacuum respectively.Winding chamber door is opened, intercepts deposited good plating film roll, is then turned off winding chamber door.Start vacuum
Pump, winding chamber vacuum is set to reach 4X10-7During torr, argon working gas is filled with, vacuum is reached 4X10-3torr.Open
Chamber door is unreeled, film roll to be plated of reloading.The upper volume end of reel is linked with this volume volume header with adhesive tape.It is then turned off unreeling chamber door.
Start vavuum pump, make to unreel chamber vacuum and reach 4X10-7When, argon working gas is filled with, vacuum is reached 4X10-3torr。
Open vacuum and keep valve E1, E2, sputter coating is continued to this volume flexible and transparent base material referring next to foregoing sputter step.
The invention reside in provide a kind of preparation method of energy-saving flexible transparent conductive film.It passes through working gas, anti-
Gas flow (partial pressure) control, reaction and non-reaction magnetocontrol sputtering are answered by Si (monocrystalline)/Nb2Ox/Nb2Ox/ Si (monocrystalline)/metal
(silver or copper)/conductor oxidate (titanium-doped zinc oxide tin or indium tin) under cryogenic, disposably, is layered, is continuous, be uniformly heavy
Product is on continuous, wide cut slim, by the processing of aura rough surface flexible and transparent base material (PET, flexible glass etc.) surface
On, form SiO2/Nb2O5/Nb2Ox(x=4.5-4.98)/SiO2/ metal conducting layer (silver or copper)/conductor oxidate (mixes titanium
Zinc-tin oxide or indium tin) structure flexible transparent conductive film.Without high annealing after film forming, crystallization degree reaches 80%, soft
Property transparent conductive film optics, electric property index and commonsense method film forming, after annealing quite.Subsequent applications reduce high annealing
Process, reduce energy resource consumption.
Claims (7)
1. energy-saving flexible transparent conductive film preparation method, the preparation method uses multiple magnetic in a vacuum coating intracavitary
Control sputter equipment, each magnetic control sputtering device include using inert gas as working gas, using oxygen as reacting gas sputtering chamber,
Target in sputtering chamber, it is characterized in that,
Gas pressure in each sputtering chamber is equal；
It is single crystalline Si, Nb respectively that the flexible and transparent base material of continuous moving, which passes sequentially through target,2Ox、Nb2Ox, single crystalline Si, silver or copper, half
The first of conducting oxide is to the 6th magnetic control sputtering device；In addition to the 5th magnetic control sputtering device, other magnetic control sputtering devices splash
Penetrate chamber and be passed through oxygen as reacting gas；Flexible and transparent base material temperature<80 DEG C, by the sputtering of each magnetic control sputtering device,
And the flow of the oxygen and inert gas that are passed through each sputtering chamber is controlled, what is handled by ionizing aura surface impurity with roughness
SiO is disposably deposited on flexible and transparent base material successively2、Nb2O5、Nb2Ox、SiO2, silver or copper, conductor oxidate；x=4.5-
4.98；
In first magnetic control sputtering device, oxygen flow 12sccm, argon flow amount 500sccm, sputtering power 2.0KW, vacuum reach
To 4E-3torr；
In second magnetic control sputtering device, oxygen flow 50sccm, argon flow amount 400sccm, sputtering power 16.4KW, vacuum reach
To 4E-3torr；
In 3rd magnetic control sputtering device, oxygen flow 10sccm, argon flow amount 500sccm, sputtering power 10.0KW, vacuum reach
To 4E-3torr；
In 4th magnetic control sputtering device, oxygen flow 30sccm, argon flow amount 450sccm, sputtering power 20.0KW, vacuum reach
To 4E-3torr；
In 5th magnetic control sputtering device, argon flow amount 400sccm, sputtering power 6.0KW, vacuum reach 4E-3torr；
In 6th magnetic control sputtering device, oxygen flow 2sccm, argon flow amount 300sccm, sputtering power 4.0KW, vacuum reach
4E-3torr。
2. energy-saving flexible transparent conductive film preparation method as claimed in claim 1, it is characterized in that：The flexible and transparent base
Material is PET or flexible glass.
3. energy-saving flexible transparent conductive film preparation method as claimed in claim 1, it is characterized in that：The preparation method includes
One has the cavity for unreeling chamber, the Vacuum Deposition membrane cavity and winding chamber, unreels chamber, winding intracavitary sets let off roll, received respectively
Winding up roller, the vacuum coating intracavitary set chill roll；Each magnetic control sputtering device is set around chill roll；Flexible and transparent base material
Cooled down after being released from let off roll through chill roll, through being wound by wind-up roll after the sputtering chamber of each magnetic control sputtering device.
4. energy-saving flexible transparent conductive film preparation method as claimed in claim 3, it is characterized in that：Also set unreeling intracavitary
It is equipped with the glow discharge ion surface processing unit for being handled the pre-deposition surface of flexible and transparent base material.
5. energy-saving flexible transparent conductive film, it is characterized in that：It is led according to the energy-saving flexible and transparent described in claim 1
Prepared by conductive film preparation method, it includes flexible and transparent base material and is sequentially deposited at flexible and transparent base by magnetron sputtering technique
SiO on material2Layer, Nb2O5Layer, Nb2OxLayer, SiO2Layer, silver layer or layers of copper, semiconductor oxide nitride layer；x=4.5-4.98.
6. energy-saving flexible transparent conductive film as claimed in claim 5, it is characterized in that：The conductor oxidate is to mix titanium
Zinc-tin oxide mixes titanium tin indium oxide；The composition of conductor oxidate is：Mass ratio is 2-7.5% TiO2, 2-7.5%
Sn2O3, remaining content ZnO2Or In2O3。
7. energy-saving flexible transparent conductive film as claimed in claim 6, it is characterized in that：Flexible and transparent base material, SiO2Layer,
Nb2O5Layer, Nb2OxLayer, SiO2Layer, silver layer or layers of copper, the thickness of semiconductor oxide nitride layer are respectively：20-50μm；2-5nm；5-
10nm；2-10nm；5-25nm；5-25nm；5-25nm.
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| CN114318230B (en) * | 2020-09-30 | 2023-06-23 | 镭亚电子(苏州)有限公司 | Method for forming silver-containing metal layer on organic adhesive layer |
| CN114277348B (en) * | 2021-12-27 | 2023-06-30 | 晋能清洁能源科技股份公司 | Method for controlling magnetron sputtering equipment in HJT battery production |
| CN115161604A (en) * | 2022-07-05 | 2022-10-11 | 东莞市龙铮真空设备有限公司 | Vacuum nano coating deposited on surface of wallpaper |
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| CN202595262U (en) * | 2012-05-14 | 2012-12-12 | 南昌欧菲光科技有限公司 | Novel winding magnetron sputtering film plating machine |
| CN202789414U (en) * | 2012-08-17 | 2013-03-13 | 成都德奇维机械有限公司 | Air suction mechanism of compressor with thin disc valve |
| CN103014644A (en) * | 2012-12-24 | 2013-04-03 | 南昌欧菲光科技有限公司 | ITO (indium tin oxide) film for touch screen and preparation method thereof |
| CN203487223U (en) * | 2013-08-19 | 2014-03-19 | 肇庆市腾胜真空技术工程有限公司 | Coating device for depositing flexible base material ITO (Indium Tin Oxides) film at low temperature |
| CN204066058U (en) * | 2014-08-06 | 2014-12-31 | 深圳市金立通信设备有限公司 | Sapphire touch-screen and terminal |
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