CN105887034A - Multi-cathode magnetron sputtering interference control device and method - Google Patents
Multi-cathode magnetron sputtering interference control device and method Download PDFInfo
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- CN105887034A CN105887034A CN201610398279.2A CN201610398279A CN105887034A CN 105887034 A CN105887034 A CN 105887034A CN 201610398279 A CN201610398279 A CN 201610398279A CN 105887034 A CN105887034 A CN 105887034A
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- sputtering
- sputtering chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a multi-cathode magnetron sputtering interference control device and method which achieve the effects that adjacent sputtering cavities do not interfere with one another and the problem that the deposition effect of all the sputtering cavities is influenced due to the fact that the flow quantity of air flow input into the sputtering cavities is different to cause mutual interference of the adjacent sputtering cavities is solved. According to the interference control device, multiple magnetron sputtering cathodes are arranged in a vacuum cavity, each magnetron sputtering cathode is provided with one sputtering cavity formed by a cathode shielding case, cathode target materials are located in all the sputtering cavities, and all the sputtering cavities are communicated with an input device used for inputting working gas and reaction gas and connected with a vacuum pump through valves with the adjustable opening degree. The control method is achieved through the interference control device, and the evacuation rate of the vacuum pump on the sputtering cavities connected with the valves is adjusted by adjusting the opening degree of the valve, so that flow quantity of air entering the sputtering cavities through the input device is equal to that of air flow evacuated by the vacuum pump from the sputtering cavities.
Description
Technical field
This technology relates to a kind of flexible, continuous takeup type many negative electrodes magnetron sputtering interference control device and method, is widely used in the manufacture of flexible display device, flexible intelligent touch screen, flexible thin-film solar cell.
Background technology
Flexible transparent conductive film is due to its characteristic such as distinctive flexibility, frivolous, high-transmission rate, prepare continuous takeup type many negative electrodes magnetic control sputtering device of flexible transparent conductive film, it is the multiple magnetic control sputtering cathodes at a vacuum coating intracavity, each magnetic control sputtering cathode includes a formed sputtering chamber of cathode shield, each sputtering chamber input noble gas is reacting gas as working gas, input oxygen, has cathode targets in each sputtering chamber.
Each sputtering chamber concentrates on a vacuum coating intracavity successively, and the sputtering chamber of each negative electrode, by technological specification quantitative input service gas, reacting gas.The sputtering chamber of each negative electrode reconnects a vacuum pump, to keep the vacuum of this sputtering chamber.
The sputtering chamber working gas of each negative electrode, reacting gas are continuously to input.And because each coating deposition properties requires difference, each sputtering chamber working gas, reacting gas input quantity are different.Due to working gas, the difference of reacting gas input quantity between each cathodic sputtering chamber, thus causing vacuum between adjacent sputtering chamber there are differences, the gas density in each sputtering chamber is the most variant.This difference will cause high density gas to flow to low density gas sputtering chamber, thus to flowing into the magnetron sputtering deposition rate of sputtering chamber, extent of reaction generation deviation.
Goal of the invention
What this technology solved is to cause adjacent sputtering chamber to interfere because of the air flow rate difference of input in each sputtering chamber, the problem affecting the deposition effect of each sputtering chamber, it is provided that the interference of a kind of adjacent sputtering chamber non-interfering many negative electrodes magnetron sputtering controls device.
For solving this problem, the technical program is:
The interference of many negative electrodes magnetron sputtering controls device, multiple magnetic control sputtering cathode it is provided with in a vacuum cavity, each magnetic control sputtering cathode has the sputtering cavity that a cathode shield is formed, cathode targets is positioned at each sputtering chamber, respectively sputtering the cavity input equipment all with input service gas, reacting gas to communicate, each sputtering chamber is all connected with vacuum pump by a valve that can regulate aperture.
Above-mentioned many negative electrodes magnetron sputtering interference controls device, if the aperture of valve wide open is 1, then the aperture of the valve being connected with a sputtering chamber is: input the air flow rate * 100% of the air flow rate in this sputtering chamber/input in all sputtering chambers.
Above-mentioned many negative electrodes magnetron sputtering interference controls device, and the vacuum of each sputtering chamber is different, but the vacuum of respectively less than vacuum cavity.
The beneficial effect of this technology: this technology is by regulating the aperture of each valve, the air flow rate inputting in each sputtering chamber is kept in balance with the air flow rate taken away by vacuum pump, the vacuum kept stable predetermined value of each sputtering chamber, it is ensured that the sputtering effect of each sputtering chamber.
This technology additionally provides a kind of preventing simultaneously and causes adjacent sputtering chamber to interfere because of the air flow rate difference of input in each sputtering chamber, affects many negative electrodes magnetron sputtering interference control method of the deposition effect of each sputtering chamber.
Many negative electrodes magnetron sputtering interference control method that this technology is above-mentioned, multiple magnetic control sputtering cathode it is provided with in a vacuum cavity, each magnetic control sputtering cathode has the sputtering cavity that a cathode shield is formed, cathode targets is positioned at each sputtering chamber, respectively sputtering the cavity input equipment all with input service gas, reacting gas to communicate, each sputtering chamber is all connected with vacuum pump by a valve that can regulate aperture；Described many negative electrodes magnetron sputtering interference control method is, the vacuum pump speed of evacuation to connecting the sputtering chamber having this valve is regulated so that the gas flow entered in this sputtering chamber by input equipment is equal with the air flow rate extracted out by vacuum pump in this sputtering chamber by the aperture of control valve.
Above-mentioned many negative electrodes magnetron sputtering interference control method, if the aperture of valve wide open is 1, then the aperture of the valve being connected with a sputtering chamber is: input the air flow rate * 100% of the air flow rate in this sputtering chamber/input in all sputtering chambers.
The beneficial effect of many negative electrodes magnetron sputtering interference control method described in this technology: this method regulates the vacuum pump speed of evacuation to connecting the sputtering chamber having this valve by the aperture of control valve, make the gas flow entering in this sputtering chamber by input equipment equal with the air flow rate extracted out by vacuum pump in this sputtering chamber, keep the output of sputtering chamber working reaction gas Jun Heng with input quantity, it is to avoid mutually to produce interference because of adjacent sputtering chamber input gas component difference.
This technology it can be avoided that work between adjacent sputtering chamber, reacting gas crossfire so that each sputtering chamber vacuum is held essentially constant, and in each sputtering chamber, the extent of reaction controls precisely, it is ensured that the magnetron sputtering deposition rate of the corresponding coating of each cathode targets.
Accompanying drawing explanation
Fig. 1 is that the interference of many negative electrodes magnetron sputtering controls device schematic diagram.
Fig. 2 is vacuum pump, valve connected structure schematic diagram.
Detailed description of the invention
The interference of flexibility shown in Figure 1, takeup type, continuous many negative electrodes magnetron sputtering controls device, it includes that one has and unreels chamber C1, plated film chamber C2 and the cavity of rolling chamber C3, unreel intracavity and let off roll A1 and glow discharge ion surface datatron GD is set, rolling intracavity arranges wind-up roll A2, and plated film intracavity arranges chill roll B1.Glow discharge ion surface processing means GD processes with roughness for the pre-deposition surface of flexible and transparent base material is carried out surface impurity.Unreel chamber, plated film chamber and rolling chamber and be respectively provided with the vacuum pump of evacuation.
First, second, third and fourth, five, six magnetic control sputtering cathodes respectively have sputtering chamber D1, D2, D3, D4, D5, D6 that a cathode shield is formed, and each sputtering chamber D1, D2, D3, D4, D5, D6 are arranged around chill roll；Each cathode targets is positioned at each sputtering chamber, respectively sputtering the cavity input equipment all with input service gas (such as argon), reacting gas (such as oxygen, nitrogen etc.) to communicate, sputtering chamber D1, D2, D3, D4, D5, D6 are connected with vacuum pump D1, D2, D3, D4, D5, D6 by valve V1, V2, V3, V4, V5, V6 respectively.Vacuum pump D1, D2, D3, D4, D5, D6 structure is identical, and running parameter is identical.Valve V1, V2, V3, V4, V5, V6 structure is identical.
The PET winding of flexible and transparent base material such as flexible and transparent after releasing let off roll through chill roll winding cooling, through after each sputtering chamber by wind-up roll rolling.
If the aperture of valve wide open is 1, assuming that working gas in input sputtering chamber D1, D2, D3, D4, D5, D6 and the flow of reacting gas and respectively F1, F2, F3, F4, F5, F6, then the aperture of valve V1, V2, V3, V4, V5, V6 is respectively as follows: F1/ (F1+F2+F3+F4+F5+F6), F2/ (F1+F2+F3+F4+F5+F6), F3/ (F1+F2+F3+F4+F5+F6), F4/ (F1+F2+F3+F4+F5+F6), F5/ (F1+F2+F3+F4+F5+F6), F6/ (F1+F2+F3+F4+F5+F6).
The interference of this many negative electrodes magnetron sputtering controls each sputtering chamber of device the working gas (such as argon) of independent control, reacting gas (such as oxygen, nitrogen etc.) input equipment, can input corresponding work, reacting gas on demand；Each sputtering chamber has oneself independent vacuum pump, has the electrically operated valve of a controlled opening and closing degree, in order to control the speed of exhaust between this vacuum pump and this sputtering chamber.The aperture of each valve, it it is the aperture of the valve being connected on this sputtering chamber according to the accounting regulation of working gas, reacting gas input component sum total and all cathode gas component sums in this sputtering chamber, in keeping sputtering chamber, work is Jun Heng with input quantity with reacting gas output, it is to avoid mutually produce interference because adjacent sputtering chamber input gas component difference.
Vacuum cavity C2 vacuum is at 3.00E-03torr, and each sputtering chamber (operating room) vacuum controls respectively between 2.90E-03 ~ 1.80E-03torr.
The feature of this device is to be adjusted according to working gas, reacting gas in affiliated sputtering chamber with this valve opening and closing degree, keeps the equilibrium of input and output amount, it is to avoid mutually produce interference because of adjacent sputtering chamber input gas component difference.
Claims (5)
1. the interference of more than negative electrode magnetron sputtering controls device, multiple magnetic control sputtering cathode it is provided with in a vacuum cavity, each magnetic control sputtering cathode has the sputtering cavity that a cathode shield is formed, cathode targets is positioned at each sputtering chamber, respectively sputter the cavity input equipment all with input service gas, reacting gas to communicate, it is characterized in that: each sputtering chamber is all connected with vacuum pump by a valve that can regulate aperture.
Many negative electrodes magnetron sputtering the most as claimed in claim 1 interference controls device, it is characterized in that: if the aperture of valve wide open is 1, then the aperture of the valve being connected with a sputtering chamber is: input the air flow rate * 100% of the air flow rate in this sputtering chamber/input in all sputtering chambers.
Many negative electrodes magnetron sputtering the most as claimed in claim 1 interference controls device, it is characterized in that: the vacuum of each sputtering chamber is different, but the vacuum of respectively less than vacuum cavity.
4. more than negative electrode magnetron sputtering interference control method, multiple magnetic control sputtering cathode it is provided with in a vacuum cavity, each magnetic control sputtering cathode has the sputtering cavity that a cathode shield is formed, cathode targets is positioned at each sputtering chamber, respectively sputter the cavity input equipment all with input service gas, reacting gas to communicate, it is characterized in that: each sputtering chamber is all connected with vacuum pump by a valve that can regulate aperture；Described many negative electrodes magnetron sputtering interference control method is, the vacuum pump speed of evacuation to connecting the sputtering chamber having this valve is regulated so that the gas flow entered in this sputtering chamber by input equipment is equal with the air flow rate extracted out by vacuum pump in this sputtering chamber by the aperture of control valve.
Many negative electrodes magnetron sputtering interference control method the most as claimed in claim 1, it is characterized in that: if the aperture of valve wide open is 1, then the aperture of the valve being connected with a sputtering chamber is: input the air flow rate * 100% of the air flow rate in this sputtering chamber/input in all sputtering chambers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610398279.2A CN105887034A (en) | 2016-06-07 | 2016-06-07 | Multi-cathode magnetron sputtering interference control device and method |
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| CN201610398279.2A CN105887034A (en) | 2016-06-07 | 2016-06-07 | Multi-cathode magnetron sputtering interference control device and method |
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| CN105887034A true CN105887034A (en) | 2016-08-24 |
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| CN201610398279.2A Pending CN105887034A (en) | 2016-06-07 | 2016-06-07 | Multi-cathode magnetron sputtering interference control device and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114369803A (en) * | 2021-12-29 | 2022-04-19 | 上海子创镀膜技术有限公司 | Novel co-sputtering biplane magnetic control target |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0376289A (en) * | 1989-08-18 | 1991-04-02 | Sanyo Electric Co Ltd | Manufacture of semiconductor laser |
| CN1835200A (en) * | 2005-03-16 | 2006-09-20 | 东京毅力科创株式会社 | Vacuum apparatus, method for measuring a leak rate thereof, program used in measuring the leak rate and storage medium storing the program |
| CN102719799A (en) * | 2012-06-08 | 2012-10-10 | 深圳市华星光电技术有限公司 | Rotary magnetron sputtering target and corresponding magnetron sputtering device |
| CN103966569A (en) * | 2014-04-28 | 2014-08-06 | 北京七星华创电子股份有限公司 | Vacuum control system and vacuum control method for semiconductor device |
| CN104651791A (en) * | 2015-02-18 | 2015-05-27 | 南京汇金锦元光电材料有限公司 | Energy-saving flexible transparent conducting film and preparation method thereof |
| CN204490985U (en) * | 2015-02-18 | 2015-07-22 | 南京汇金锦元光电材料有限公司 | Flexible transparent conductive film and preparation facilities thereof |
| CN104992780A (en) * | 2015-07-06 | 2015-10-21 | 南京汇金锦元光电材料有限公司 | Sedimentation cavity division plate in magnetron sputtering apparatus used for electric conduction film preparation and preparation method of sedimentation cavity division plate |
| CN205974649U (en) * | 2016-06-07 | 2017-02-22 | 南京汇金锦元光电材料有限公司 | Flexible magnetron sputtering device of jam -proof |
-
2016
- 2016-06-07 CN CN201610398279.2A patent/CN105887034A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0376289A (en) * | 1989-08-18 | 1991-04-02 | Sanyo Electric Co Ltd | Manufacture of semiconductor laser |
| CN1835200A (en) * | 2005-03-16 | 2006-09-20 | 东京毅力科创株式会社 | Vacuum apparatus, method for measuring a leak rate thereof, program used in measuring the leak rate and storage medium storing the program |
| CN102719799A (en) * | 2012-06-08 | 2012-10-10 | 深圳市华星光电技术有限公司 | Rotary magnetron sputtering target and corresponding magnetron sputtering device |
| CN103966569A (en) * | 2014-04-28 | 2014-08-06 | 北京七星华创电子股份有限公司 | Vacuum control system and vacuum control method for semiconductor device |
| CN104651791A (en) * | 2015-02-18 | 2015-05-27 | 南京汇金锦元光电材料有限公司 | Energy-saving flexible transparent conducting film and preparation method thereof |
| CN204490985U (en) * | 2015-02-18 | 2015-07-22 | 南京汇金锦元光电材料有限公司 | Flexible transparent conductive film and preparation facilities thereof |
| CN104992780A (en) * | 2015-07-06 | 2015-10-21 | 南京汇金锦元光电材料有限公司 | Sedimentation cavity division plate in magnetron sputtering apparatus used for electric conduction film preparation and preparation method of sedimentation cavity division plate |
| CN205974649U (en) * | 2016-06-07 | 2017-02-22 | 南京汇金锦元光电材料有限公司 | Flexible magnetron sputtering device of jam -proof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114369803A (en) * | 2021-12-29 | 2022-04-19 | 上海子创镀膜技术有限公司 | Novel co-sputtering biplane magnetic control target |
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Application publication date: 20160824 |